摘要:
A method of manufacture of an integrated circuit packaging system includes providing a substrate; connecting an integrated circuit die; forming a molding having a temperature-dependent characteristic directly on the top surface of the substrate; and forming a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic directly on the molding forms an encapsulation boundary between the coupling encapsulation and the molding.
摘要:
A method of manufacture of an integrated circuit packaging system includes providing a substrate; connecting an integrated circuit die; forming a molding having a temperature-dependent characteristic directly on the top surface of the substrate; and forming a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic directly on the molding forms an encapsulation boundary between the coupling encapsulation and the molding.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming an integrated circuit device having a shaped side; mounting the integrated circuit device on the substrate; forming an encapsulation on the substrate and the integrate circuit device with the shaped side partially exposed from the encapsulation.
摘要:
A method of manufacture of an integrated circuit packaging system includes: forming a connection carrier having base device pads and base interconnect pads on a carrier top side of the connection carrier; connecting a base integrated circuit to the base device pads and mounted over the carrier top side; mounting base vertical interconnects directly on the base interconnect pads; attaching a base package substrate to the base integrated circuit and directly on the base vertical interconnects; forming a base encapsulation on the base package substrate, the base device pads, and the base interconnect pads; and removing a portion of the connection carrier with the base device pads and the base interconnect pads partially exposed opposite the base package substrate.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit over the substrate; mounting a lid base over the substrate, the lid base having a base indentation and a hole with the integrated circuit within the hole; and mounting a heat slug over the lid base, the heat slug having a slug non-horizontal side partially within the base indentation.
摘要:
A method of manufacture of an integrated circuit packaging system includes: forming a connection carrier having base device pads and base interconnect pads on a carrier top side of the connection carrier; connecting a base integrated circuit to the base device pads and mounted over the carrier top side; mounting base vertical interconnects directly on the base interconnect pads; attaching a base package substrate to the base integrated circuit and directly on the base vertical interconnects; forming a base encapsulation on the base package substrate, the base device pads, and the base interconnect pads; and removing a portion of the connection carrier with the base device pads and the base interconnect pads partially exposed opposite the base package substrate.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit over the substrate; mounting a lid base over the substrate, the lid base having a base indentation and a hole with the integrated circuit within the hole; and mounting a heat slug over the lid base, the heat slug having a slug non-horizontal side partially within the base indentation.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a substrate base side and a substrate stack side; mounting an integrated circuit over the substrate stack side; attaching a stack connector to the substrate stack side; forming an encapsulation over the stack connector and the integrated circuit; attaching an external connector to the substrate base side; attaching an adhesive tape to the external connector having spacing between the adhesive tape and the substrate base side; cutting a step portion in the encapsulation to expose the stack connector; cutting a singulation kerf in the package substrate having exit damage on the substrate base side; and removing the adhesive tape.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a substrate base side and a substrate stack side; mounting an integrated circuit over the substrate stack side; attaching a stack connector to the substrate stack side; forming an encapsulation over the stack connector and the integrated circuit; attaching an external connector to the substrate base side; attaching an adhesive tape to the external connector having spacing between the adhesive tape and the substrate base side; cutting a step portion in the encapsulation to expose the stack connector; cutting a singulation kerf in the package substrate having exit damage on the substrate base side; and removing the adhesive tape.
摘要:
A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second substrate and electrically connected to the second conductive layer. The first semiconductor die is mounted over the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and the first and second substrates. A conductive interconnect structure is formed through the encapsulant to electrically connect the first and second semiconductor die to the second surface of the semiconductor device. Forming the conductive interconnect structure includes forming a plurality of conductive vias through the encapsulant and the first substrate outside a footprint of the first and second semiconductor die.