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52 条记录 (耗时 0.027 秒)

    Memory devices and methods of operating the same
    1.
    发明授权
    Memory devices and methods of operating the same 有权
    内存设备及操作方法

    公开(公告)号：US09418739B2

    公开(公告)日：2016-08-16

    申请号：US14616806

    申请日：2015-02-09

    申请人： Yong-Kyu Lee ,  Yeong-Taek Lee

    发明人： Yong-Kyu Lee ,  Yeong-Taek Lee

    IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C11/56

    CPC分类号： G11C13/0069 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0033 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2013/0071 ,  G11C2213/71 ,  G11C2213/72

    摘要： Methods of operating a memory device include; applying a first set write voltage to a selected first signal line connected to a selected memory cell, applying a first inhibition voltage to non-selected first signal lines connected to non-selected memory cells, and controlling a first voltage of a selected second signal line connected to the selected memory cell to be less than the first set write voltage, and a difference between the first inhibition voltage and the first voltage is less than a threshold voltage of the selection element.

    摘要翻译： 操作存储设备的方法包括： 对连接到所选择的存储单元的所选择的第一信号线施加第一组写入电压，向连接到未选择的存储器单元的未选择的第一信号线施加第一抑制电压，以及控制所选择的第二信号线的第一电压 连接到所选择的存储单元以小于第一设置写入电压，并且第一抑制电压和第一电压之间的差小于选择元件的阈值电压。

    Semiconductor device and method of fabricating semiconductor device
    4.
    发明授权
    Semiconductor device and method of fabricating semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号：US08476130B2

    公开(公告)日：2013-07-02

    申请号：US13180613

    申请日：2011-07-12

    申请人： Tea-Kwang Yu ,  Byung-Sup Shim ,  Yong-Kyu Lee ,  Bo-Young Seo ,  Yong-Tae Kim

    发明人： Tea-Kwang Yu ,  Byung-Sup Shim ,  Yong-Kyu Lee ,  Bo-Young Seo ,  Yong-Tae Kim

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/2436 ,  H01L27/105 ,  H01L27/2445 ,  H01L45/1683

    摘要： A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.

    摘要翻译： 一种制造半导体器件的方法包括提供具有存储块和在其中定义的逻辑块的衬底，在存储块上形成伪栅极图案; 在伪栅极图案的一侧形成第一导电类型的第一区域和在虚拟栅极图案的另一侧形成第二导电类型的第二区域，以及形成与第一区域电连接的非易失性存储器件。

    Non-Volatile Memory Device
    5.
    发明申请
    Non-Volatile Memory Device 有权
    非易失性存储器件

    公开(公告)号：US20120087189A1

    公开(公告)日：2012-04-12

    申请号：US13177873

    申请日：2011-07-07

    申请人： Yong-Kyu Lee ,  Tea-Kwang Yu ,  Bo-Young Seo

    发明人： Yong-Kyu Lee ,  Tea-Kwang Yu ,  Bo-Young Seo

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0408 ,  G11C16/0425 ,  G11C16/06 ,  G11C16/3418

    摘要： A non-volatile memory device includes a first sector including a first sector selection transistor and a first plurality of pages connected to the first sector selection transistor, and a second sector including a second sector selection transistor and a second plurality of pages connected to the second sector selection transistor. Each of the first and second plurality of pages includes a memory transistor and a selection transistor, and a number of pages in the first plurality of pages is greater than a number of pages in the second plurality of pages.

    摘要翻译： 非易失性存储器件包括第一扇区，包括第一扇区选择晶体管和连接到第一扇区选择晶体管的第一多个页，以及包括第二扇区选择晶体管的第二扇区和连接到第二扇区选择晶体管的第二多个页 扇区选择晶体管。 第一和第二多页中的每一页包括存储晶体管和选择晶体管，并且第一多页中的页数大于第二多页中的页数。

    Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device
    6.
    发明授权
    Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device 失效
    掩模ROM器件，包括掩模ROM器件的半导体器件，以及制造掩模ROM器件和半导体器件的方法

    公开(公告)号：US08053342B2

    公开(公告)日：2011-11-08

    申请号：US12836066

    申请日：2010-07-14

    申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

    发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/105 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/1052 ,  H01L27/11266 ,  H01L27/11293

    摘要： A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.

    摘要翻译： 可以稳定地输出数据的掩模只读存储器（ROM）装置包括接通电池和截止电池。 开放单元包括衬底上的孔上栅极结构和衬底内的电池单元结结构。 离子电池包括在衬底上的离子电池栅极结构和衬底内的细胞外结合结构。 单体栅极结构包括单元间栅极绝缘膜，单晶体栅极电极和单元间栅极间隔物。 该单电池结结构包括具有第一极性的第一和第二开孔离子注入区和第二极性的第三和第四接通电离子注入区。 离群栅极结构包括离子栅极绝缘膜，离子阱栅极电极和非电池栅极间隔物。 离电池结结构包括具有第一极性的第一和第二离子外离子注入区域和第二极性的第三离子间离子注入区域。

    FIN FIELD EFFECT TRANSISTORS INCLUDING OXIDATION BARRIER LAYERS
    8.
    发明申请
    FIN FIELD EFFECT TRANSISTORS INCLUDING OXIDATION BARRIER LAYERS 有权
    包括氧化阻挡层的FIN场效应晶体管

    公开(公告)号：US20080029828A1

    公开(公告)日：2008-02-07

    申请号：US11871453

    申请日：2007-10-12

    申请人： Chang-Woo Oh ,  Dong-Gun Park ,  Dong-Won Kim ,  Yong-Kyu Lee

    发明人： Chang-Woo Oh ,  Dong-Gun Park ,  Dong-Won Kim ,  Yong-Kyu Lee

    IPC分类号： H01L29/76 ,  H01L21/336

    CPC分类号： H01L29/7854 ,  B82Y10/00 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/78645

    摘要： A method of forming a fin field effect transistor on a semiconductor substrate includes forming a fin-shaped active region vertically protruding from the substrate. An oxide layer is formed on a top surface and opposing sidewalls of the fin-shaped active region. An oxidation barrier layer is formed on the opposing sidewalls of the fin-shaped active region and is planarized to a height no greater than about a height of the oxide layer to form a fin structure. The fin structure is oxidized to form a capping oxide layer on the top surface of the fin-shaped active region and to form at least one curved sidewall portion proximate the top surface of the fin-shaped active region. The oxidation barrier layer has a height sufficient to reduce oxidation on the sidewalls of the fin-shaped active region about halfway between the top surface and a base of the fin-shaped active region. Related devices are also discussed.

    摘要翻译： 在半导体衬底上形成鳍状场效应晶体管的方法包括形成从衬底垂直突出的鳍状有源区。 在鳍状有源区的上表面和相对侧壁上形成氧化物层。 在翅片状有源区域的相对的侧壁上形成氧化阻挡层，并将其平坦化至不大于氧化物层高度的高度以形成翅片结构。 翅片结构被氧化以在翅片形有源区的顶表面上形成封盖氧化层，并且在翅片形有源区的顶表面附近形成至少一个弯曲的侧壁部分。 氧化阻挡层的高度足以减小翅片形有源区的侧壁上的氧化，大约在鳍状有源区的顶表面和基底之间的一半处。 还讨论了相关设备。

    Oral delivery of macromolecules
    10.
    发明授权
    Oral delivery of macromolecules 失效

    公开(公告)号：US06656922B2

    公开(公告)日：2003-12-02

    申请号：US09845827

    申请日：2001-04-30

    申请人： Youngro Byun ,  Yong-Kyu Lee

    发明人： Youngro Byun ,  Yong-Kyu Lee

    IPC分类号： A61K31727

    CPC分类号： C08B37/00 ,  A61K31/727 ,  A61K47/542 ,  A61K47/554 ,  A61K47/61 ,  C08B37/0075

    摘要： Polysaccharides, which are widely used as an anticoagulation drugs, especially heparin, are clinically administered only by intravenous or subcutaneous injection because of their strong hydrophilicity and high negative charge. Amphiphilic heparin derivatives were synthesized by conjugation to bile acids, sterols, and alkanoic acids, respectively. These heparin derivatives were slightly hydrophobic, exhibited good solubility in water, and have high anticoagulation activity. These slightly hydrophobic heparin derivatives are efficiently absorbed in the gastrointestinal tract and can be used in oral dosage forms. Methods of using these amphiphilic heparin derivatives and similarly modified macromolecules for oral administration are also disclosed.