摘要:
A retaining ring includes a generally annular lower portion and a generally annular upper portion. The lower portion has a bottom surface for contacting a polishing pad during polishing and a top surface. The upper portion has a bottom surface secured to the top surface of the lower portion and a top surface configured to be mechanically affixed to and abut a rigid base of a carrier head. The lower portion is a first plastic, and the upper portion is a different second plastic that is about the same or more rigid than the first plastic.
摘要:
A substrate processing chamber component has a structural body with localized surface regions having annealed microcracks. The annealed microcracks reduce crack propagation and increase fracture resistance. In one method of manufacture, the structural body of the component is formed, and a laser beam is directed onto localized surface regions of the body for a sufficient time to anneal the surface microcracks.
摘要:
A substrate processing chamber component has a structural body with localized surface regions having annealed microcracks. The annealed microcracks reduce crack propagation and increase fracture resistance. In one method of manufacture, the structural body of the component is formed by conventional means, and a laser beam is directed onto localized surface regions of the body for a sufficient time to anneal the surface microcracks.
摘要:
A method of providing a corrosion-resistant coating on a surface of an aluminum component comprises anodizing the surface of the aluminum component to form an anodized aluminum oxide layer and sputter coating a sputtered layer on the anodized aluminum oxide layer. A coated aluminum component can be used in a substrate processing chamber and comprises an aluminum body, an anodized aluminum oxide layer formed on the aluminum body, and a sputtered layer comprising aluminum oxide on the anodized aluminum oxide layer.
摘要:
A method of providing a corrosion-resistant coating on a surface of an aluminum component comprises anodizing the surface of the aluminum component to form an anodized aluminum oxide layer and sputter coating a sputtered layer on the anodized aluminum oxide layer. A coated aluminum component can be used in a substrate processing chamber and comprises an aluminum body, an anodized aluminum oxide layer formed on the aluminum body, and a sputtered layer comprising aluminum oxide on the anodized aluminum oxide layer.
摘要:
A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.
摘要:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要:
A substrate processing chamber component demonstrates reduced erosion in an energized gas. The component has a ceramic structure composed of aluminum oxide with a surface exposed to the energized gas in the chamber. The erosion of the surface by the energized gas is substantially reduced by erosion resistant properties of the ceramic structure, which arise from a ratio of the total area of the grains GSA to the total area of the grain boundary regions GBSA in the ceramic structure of from about 0.25 to about 2.5. Also, at least about 80% of the grains in the ceramic structure have a grain size in the range of from about 1 micron to about 20 microns. The ceramic structure also has a purity of at least about 99.8% by weight to further reduce erosion of the surface.
摘要翻译:衬底处理室组件表现出在通电气体中减少的侵蚀。 该组件具有由氧化铝组成的陶瓷结构,其表面暴露于室中的通电气体。 通过赋予气体的表面的侵蚀通过陶瓷结构的抗侵蚀性能而显着降低,这是由于晶粒G S SA的总面积与晶界的总面积的比率而产生的 陶瓷结构中的区域GB SUB>为约0.25至约2.5。 此外,陶瓷结构中的至少约80%的晶粒具有在约1微米至约20微米范围内的晶粒尺寸。 陶瓷结构还具有至少约99.8重量%的纯度,以进一步减少表面的侵蚀。
摘要:
Method and apparatus for determining an endpoint of a cleaning process running in a chamber. In particular, one embodiment of the present invention is a method that includes steps of: (a) directing radiation absorbed by a byproduct of the cleaning process into an exhaust line of the chamber; (b) detecting a measure of absorbance of the radiation by the byproduct; and (c) determining the endpoint when the measure of absorbance falls within a predetermined window.
摘要:
A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.