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    Method for producing lactic acid with high concentration and high yield using lactic acid bacteria
    3.
    发明申请
    Method for producing lactic acid with high concentration and high yield using lactic acid bacteria 有权
    使用乳酸菌生产高浓度和高产量乳酸的方法

    公开(公告)号：US20070117193A1

    公开(公告)日：2007-05-24

    申请号：US10582389

    申请日：2004-11-18

    申请人： Young Park ,  Kwang Cho ,  Hye Won Kim ,  Dae Chol Kim

    发明人： Young Park ,  Kwang Cho ,  Hye Won Kim ,  Dae Chol Kim

    IPC分类号： C12P7/56 ,  C12N1/20

    CPC分类号： C12N1/20 ,  C12P7/56 ,  C12R1/225

    摘要： The present invention relates to a method for producing lactic acid with high concentration and high yield using Lactobacillus paracasei CJLA0310 KCCM-10542 that is separated and identified from Kimchi. Lactic acid is a very important organic acid with a wide range of applications including food additive such as food preservative, condiment or acidifier, and industrial fields such as cosmetics, chemistry, metals, electronics, fabrics, dyeing textiles, and pharmaceutical industries. Particularly, lactic acid is an essential ingredient of polylactic acid, one of biodegradable plastics to replace recalcitrant non-biodegradable plastics which are main causes of environmental contamination.

    摘要翻译： 本发明涉及使用从泡菜分离鉴定的副干酪乳杆菌CJLA0310 KCCM-10542来生产高浓度和高产量的乳酸的方法。 乳酸是一种非常重要的有机酸，适用范围广泛，包括食品添加剂如食品防腐剂，调味品或酸化剂，以及化妆品，化学，金属，电子，织物，染色纺织品和制药工业等工业领域。 特别地，乳酸是聚乳酸的重要成分，聚乳酸是能够替代作为环境污染的主要原因的顽固性不可生物降解塑料的生物降解塑料之一。

    Method for producing L-threonine
    4.
    发明申请
    Method for producing L-threonine 有权
    生产L-苏氨酸的方法

    公开(公告)号：US20050054076A1

    公开(公告)日：2005-03-10

    申请号：US10916804

    申请日：2004-08-12

    申请人： Jae Cho ,  Byoung Lee ,  Dae Kim ,  Jin Lee ,  Young Park

    发明人： Jae Cho ,  Byoung Lee ,  Dae Kim ,  Jin Lee ,  Young Park

    IPC分类号： C12N15/09 ,  C12N1/21 ,  C12P13/08 ,  C12N1/20

    CPC分类号： C12P13/08

    摘要： An L-threonine-producing Escherichia coli strain and a method for producing the same are provided. The Escherchia coli strain contains chromosomal DNA with inactivated metJ gene. Therefore, expression repression of threonine biosynthesis genes by a metJ gene product is prevented, thereby producing a high concentration of threonine. Further, a high concentration of L-threonine can be produced in high yield using the method.

    摘要翻译： 提供了产生L-苏氨酸的大肠杆菌菌株及其制备方法。 大肠埃希氏菌菌株含有具有灭活的metJ基因的染色体DNA。 因此，通过metJ基因产物抑制苏氨酸生物合成基因的表达抑制，从而产生高浓度的苏氨酸。 此外，可以使用该方法以高产率制备高浓度的L-苏氨酸。

    Carrier module
    5.
    发明申请
    Carrier module 失效
    运营商模块

    公开(公告)号：US20050200000A1

    公开(公告)日：2005-09-15

    申请号：US10797073

    申请日：2004-03-11

    申请人： Chul Ham ,  Byoung Lee ,  Ho Song ,  Young Park

    发明人： Chul Ham ,  Byoung Lee ,  Ho Song ,  Young Park

    IPC分类号： H01L29/74

    CPC分类号： G01R31/2893

    摘要： Carrier module including a carrier module body for seating a semiconductor device on an underside thereof, having a pass through hole from an upper part to the underside the semiconductor device is seated thereon, a housing over the carrier module body, a supplementary housing fitted in a lower part of the housing to be movable in up/down directions, for elastic contact with the carrier module body by a first elastic member fitted inside of the housing, a vacuum tube in the supplementary housing so as to be in communication with the pass through hole in the carrier module body, at least one pair of latches in a lower part of the carrier module body to move apart or close in an outer or inner side, for holding or releasing the semiconductor device seated on the carrier module body, a latch button fitted in an upper part of the carrier module body so as to be movable in up/down directions, and coupled to the latch with a connection pin for moving in up/down directions by an external force, to making the latch to move, and a second elastic member for elastic supporting of the latch buttons on the carrier module body, thereby, when the semiconductor device is brought into contact with the test socket, and tested, holding the semiconductor device with a vacuum formed through the pass through hole in the carrier module body and the vacuum tube in a state the latch releases the semiconductor device.

    摘要翻译： 载体模块包括用于将半导体器件放置在其下侧上的载体模块体，其具有从半部装置所在的上部到下侧的通孔，载体模块主体上的壳体，安装在其中的辅助壳体 壳体的下部能够在上下方向上移动，通过安装在壳体内部的第一弹性构件与载体模块主体弹性接触，辅助壳体中的真空管与通孔连通 载体模块主体中的至少一个闩锁，载体模块主体的下部中的至少一对闩锁，用于在外侧或内侧上分开或关闭，用于保持或释放位于载体模块主体上的半导体器件，闩锁 按钮装配在载体模块主体的上部，以便能够在上/下方向上移动，并且通过一个连接销连接到闩锁上，该连接销通过一个外部的forc在上/下方向上移动 e，使闩锁移动;以及第二弹性构件，用于弹性地支撑载体模块主体上的闩锁按钮，由此当半导体器件与测试插座接触并进行测试时，将半导体器件保持在 在闩锁释放半导体器件的状态下通过载体模块体中的通孔形成的真空和真空管。

    Method of Depositing Thin Film
    7.
    发明申请
    Method of Depositing Thin Film 失效
    沉积薄膜的方法

    公开(公告)号：US20080044567A1

    公开(公告)日：2008-02-21

    申请号：US11571547

    申请日：2005-12-14

    申请人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

    发明人： Tae Seo ,  Young Park ,  Ki Lee ,  Sahng Lee

    IPC分类号： C23C16/00

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76861

    摘要： Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.

    摘要翻译： 公开了一种沉积薄膜的方法，其中薄膜连续地沉积到一个室中，并且将1-6个晶片装入室中。 在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，进行调整，使得保持第一工艺间隙;（c）移动晶片块使得第一工艺间隙 改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e） 卸载沉积有Ti / TiN薄膜的基板。 如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜，则可以在PM周期内在4个室中仅设置一个室，从而可以显着提高簇工具的运行比。 当在一个室中连续沉积Ti / TiN时，将衬底从Ti室移动到TiN室所需的时间减少，因此每单位时间衬底的处理效率显着提高。

    Handler for testing semiconductor devices
    8.
    发明申请
    Handler for testing semiconductor devices 失效

    公开(公告)号：US20070152655A1

    公开(公告)日：2007-07-05

    申请号：US11713683

    申请日：2007-03-05

    申请人： Chul Ham ,  Ho Song ,  Young Park ,  Woo Lim ,  Jae Seo

    发明人： Chul Ham ,  Ho Song ,  Young Park ,  Woo Lim ,  Jae Seo

    IPC分类号： G01R31/28

    CPC分类号： G01R31/2893 ,  G01R31/2867

    摘要： A handler for testing semiconductor devices is disclosed which is capable of simplifying the process carried out in an exchanging station, namely, the process of loading/unloading semiconductor devices in/from test trays, and greatly increasing the number of simultaneously testable semiconductor devices. The handler includes a loading station, an unloading station, test trays, an exchanging station comprising a horizontal moving unit for horizontally moving a selected one of the test trays by a predetermined pitch at a working place, a test station in which at least one test board having a plurality of test sockets to be electrically connected with semiconductor devices is mounted, the test station performing a test while connecting the semiconductor devices in one of the test trays, which is fed from the exchanging station to the test station, to the test sockets, device transfer units for transfer the semiconductor devices between the loading station and the exchanging station and between the exchanging station and the unloading station, respectively, and a tray transfer unit for transfer the test trays between the exchanging station and the test station.

    Phase change memory device having semiconductor laser unit
    9.
    发明申请
    Phase change memory device having semiconductor laser unit 有权
    具有半导体激光器单元的相变存储器件

    公开(公告)号：US20070133272A1

    公开(公告)日：2007-06-14

    申请号：US11635279

    申请日：2006-12-07

    申请人： Byoung Yu ,  Seung Lee ,  Sangouk Ryu ,  Sung Yoon ,  Young Park ,  Kyu Choi ,  Nam Lee

    发明人： Byoung Yu ,  Seung Lee ,  Sangouk Ryu ,  Sung Yoon ,  Young Park ,  Kyu Choi ,  Nam Lee

    IPC分类号： G11C11/00

    CPC分类号： H01L45/1213 ,  G11C13/0004 ,  G11C13/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1666

    摘要： Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

    摘要翻译： 提供了一种相变存储器件，包括：相变存储器单元，包括相变层图案; 激光束聚焦单元将激光束局部聚焦在相变存储单元的相变层图案上; 以及向激光束聚焦单元产生并发射激光束的半导体激光器单元。 因此，相变存储器件中的设定或复位操作使用局部施加的激光束，从而在单位电池的操作期间降低消耗功率并防止存储在相邻单元中的信息的破坏或改变。

    Image sensor having self-aligned and overlapped photodiode and method of making same
    10.
    发明申请
    Image sensor having self-aligned and overlapped photodiode and method of making same 有权

    公开(公告)号：US20070111361A1

    公开(公告)日：2007-05-17

    申请号：US11648942

    申请日：2007-01-03

    申请人： Young Park

    发明人： Young Park

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14603 ,  H01L27/14641 ,  H04N5/37457

    摘要： An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such that a portion of the transfer gate protrudes laterally from under the masking layer. A photodiode is formed in the substrate to be self-aligned with the masking layer and to extending laterally under the transfer gate, that is, to overlap the transfer gate. Because of the overlap of the photodiode with the transfer gate, offset between the photodiode and the transfer gate is eliminated, such that an image lag phenomenon is eliminated.