公开(公告)号：US08896108B2

公开(公告)日：2014-11-25

申请号：US13229079

申请日：2011-09-09

申请人： Yuichi Watanabe ,  Akira Yamane ,  Yasuo Oishibashi

发明人： Yuichi Watanabe ,  Akira Yamane ,  Yasuo Oishibashi

IPC分类号： H01L23/495 ,  H01L27/02 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L23/49513 ,  H01L23/49537 ,  H01L23/49589 ,  H01L24/05 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0288 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention enhances resistance to a surge in a semiconductor device having a semiconductor die mounted on a lead frame. An N type embedded layer, an epitaxial layer and a P type semiconductor layer are disposed on the front surface of a P type semiconductor substrate forming an IC die. A metal thin film is disposed on the back surface of the semiconductor substrate, and a conductive paste containing silver particles and so on is disposed between the metal thin film and a metal island. When a surge is applied to a pad electrode disposed on the front surface of the semiconductor layer, the surge current flowing from the semiconductor layer into the semiconductor substrate runs toward the metal island through the metal thin film.

摘要翻译： 本发明增强了对具有安装在引线框架上的半导体管芯的半导体器件中的浪涌电阻。 N型嵌入层，外延层和P型半导体层设置在形成IC管芯的P型半导体衬底的前表面上。 金属薄膜设置在半导体衬底的背表面上，并且在金属薄膜和金属岛之间设置包含银颗粒等的导电膏。 当浪涌施加到设置在半导体层的前表面上的焊盘电极时，从半导体层流入半导体衬底的浪涌电流通过金属薄膜朝向金属岛延伸。

公开(公告)号：US08743409B2

公开(公告)日：2014-06-03

申请号：US13222403

申请日：2011-08-31

申请人： Yuichi Watanabe

发明人： Yuichi Watanabe

IPC分类号： G06F3/12 ,  G06K15/00 ,  H04N1/00 ,  H04N1/40

CPC分类号： H04N1/32379 ,  H04N1/00212 ,  H04N1/32416 ,  H04N2201/0094 ,  H04N2201/3288 ,  H04N2201/3295 ,  H04N2201/3298

摘要： An information processing apparatus includes a receiving unit for receiving data; a printing unit for printing the data; a data storage unit for storing the data; a print setting storage unit for storing a print enable setting indicating whether the data received with the receiving unit is printed; and a print control unit for controlling the printing unit to print the data stored in the data storage unit when the print enable setting is not set to print the data and it is determined that a remaining storage capacity of the data storage unit is not sufficient.

摘要翻译： 一种信息处理装置，包括用于接收数据的接收单元; 用于打印数据的打印单元; 数据存储单元，用于存储数据; 打印设置存储单元，用于存储指示是否打印了用接收单元接收的数据的打印使能设置; 以及打印控制单元，用于当未设置打印使能设置以打印数据并且确定数据存储单元的剩余存储容量不足时，控制打印单元打印存储在数据存储单元中的数据。

公开(公告)号：US08736295B2

公开(公告)日：2014-05-27

申请号：US12873738

申请日：2010-09-01

申请人： Yuichi Watanabe ,  Kiyotaka Shinada ,  Yuushin Kimura ,  Shigeru Goto ,  Yasuhiko Tandou ,  Eiji Takada ,  Kouji Uesaka

发明人： Yuichi Watanabe ,  Kiyotaka Shinada ,  Yuushin Kimura ,  Shigeru Goto ,  Yasuhiko Tandou ,  Eiji Takada ,  Kouji Uesaka

IPC分类号： G01R31/26

CPC分类号： G01R31/2889

摘要： A signal processing section included in a semiconductor testing circuit supplies a test signal inputted from a tester via a signal line to a plurality of DUTs and generates a test result by synthesizing response signals transmitted from the plurality of DUTs on the basis of the test signal. A test result output section included in the semiconductor testing circuit makes a voltage level of the test result differ from a voltage level of the test signal inputted and outputs the test result to the tester via the signal line.

摘要翻译： 包括在半导体测试电路中的信号处理部分通过信号线向测试者输入的测试信号提供给多个DUT，并且通过根据测试信号合成从多个DUT发送的响应信号来产生测试结果。 包含在半导体测试电路中的测试结果输出部分使得测试结果的电压电平与输入的测试信号的电压电平不同，并通过信号线将测试结果输出给测试者。

公开(公告)号：US07362074B2

公开(公告)日：2008-04-22

申请号：US11317286

申请日：2005-12-27

申请人： Noriyasu Iwane ,  Yuichi Watanabe ,  Takezo Sugimura ,  Toshiyuki Satoh ,  Atsushi Kimura ,  Fumikazu Iwahana ,  Katsumi Inaniwa ,  Tetsuya Kanou

发明人： Noriyasu Iwane ,  Yuichi Watanabe ,  Takezo Sugimura ,  Toshiyuki Satoh ,  Atsushi Kimura ,  Fumikazu Iwahana ,  Katsumi Inaniwa ,  Tetsuya Kanou

IPC分类号： H01M10/44 ,  H01M10/46

CPC分类号： G01R31/3662 ,  G01R31/3675 ,  G01R31/3679

摘要： A method for determining deterioration of accumulator battery hooked up with loads in a system based on results of measuring internal resistances of an accumulator battery, the method comprising the steps of; predetermining as a specified temperature a temperature at which the deterioration of the accumulator battery is determined; calculating in advance temperature correction coefficients of the internal resistances from changes of the internal resistances depending on temperatures; predetermining resistance-voltage conversion factors to convert between the internal resistances at the specified temperature and terminal discharge voltages of the accumulator battery which are obtained at the specified temperature under a condition of flowing predetermined discharge currents from the accumulator battery; measuring the internal resistances of the accumulator battery and temperature of the accumulator battery at an internal resistance measurement; converting the measured internal resistance values into the internal resistance values at the specified temperature with use of the temperature correction coefficients of the internal resistances; converting the internal resistance values at the specified temperature into the terminal discharge voltage values of the accumulator battery at the specified temperature with use of the resistance-voltage conversion factors; and determining whether the accumulator battery is deteriorated or not by means of comparison of the terminal discharge voltage values of the accumulator battery at the specified temperature and a predetermined threshold value as a deterioration judgment standard.

摘要翻译： 一种用于基于测量蓄电池的内部电阻的结果来确定在系统中负载耦合的蓄电池的劣化的方法，所述方法包括以下步骤： 预先确定蓄电池电池劣化的温度为指定温度; 根据温度从内部电阻的变化中预先计算内部电阻的温度校正系数; 预先确定电阻 - 电压转换系数，以在从蓄电池流动预定的放电电流的条件下，在规定温度下获得的内部电阻和蓄电池的终端放电电压之间转换; 在内部电阻测量时测量蓄电池的内部电阻和蓄电池的温度; 使用内部电阻的温度校正系数将所测量的内部电阻值转换为指定温度下的内部电阻值; 使用电阻 - 电压转换因子将指定温度下的内部电阻值转换为指定温度下蓄电池的端子放电电压值; 并且通过将在规定温度下的蓄电池的端子排出电压值与预定阈值进行比较来判定蓄电池是否劣化为劣化判定基准。

公开(公告)号：US20070013947A1

公开(公告)日：2007-01-18

申请号：US11480997

申请日：2006-07-06

申请人： Yuichi Watanabe

发明人： Yuichi Watanabe

IPC分类号： G06F3/12

CPC分类号： G06F3/1229 ,  G06F3/1204 ,  G06F3/1285

摘要： An image processing apparatus capable of receiving a response with respect to an acquisition request of management information of a printing apparatus even if the printing apparatus is working. The image processing apparatus comprises a network connecting section; an interface section; a data transferring section; a management information acquiring section; a management information storing section; and a network controlling section, in the case that the printing apparatus is not working, the management information acquiring section acquires management information from the printing apparatus; in the case that the printing apparatus is working, the management information acquiring section acquires management information from the management information storing section.

摘要翻译： 即使打印装置工作，也能够接收关于打印装置的管理信息的获取请求的响应的图像处理装置。 图像处理装置包括网络连接部分; 接口部分; 数据传输部分; 管理信息获取部; 管理信息存储部; 以及网络控制部，在所述打印装置不工作的情况下，所述管理信息获取部从所述打印装置取得管理信息; 在打印装置工作的情况下，管理信息获取部从管理信息存储部获取管理信息。

公开(公告)号：US20060208704A1

公开(公告)日：2006-09-21

申请号：US10552674

申请日：2004-07-08

申请人： Noriyasu Iwane ,  Yuichi Watanabe ,  Takezo Sugimura ,  Toshiyuki Satoh ,  Atsushi Kimura ,  Fumikazu Iwahana ,  Katsumi Inaniwa ,  Tetsuya Kanou

发明人： Noriyasu Iwane ,  Yuichi Watanabe ,  Takezo Sugimura ,  Toshiyuki Satoh ,  Atsushi Kimura ,  Fumikazu Iwahana ,  Katsumi Inaniwa ,  Tetsuya Kanou

IPC分类号： H02J7/00

CPC分类号： G01R31/3651 ,  G01R31/3675

摘要： The method for calculating charged rate of a secondary battery is intended to calculate charged rate of a secondary battery which supplies electric power to loads, and comprises the step to measure voltage of the secondary battery more than once in a predetermined period of time after termination of charge or discharge, the step to determine the coefficients of a quadric or more exponential damping function which approximates the time characteristic of the open circuit voltage of the secondary battery by recursive calculation with the plural measured voltage values, and the step to calculate a convergent value of the open circuit voltage of the secondary battery from at least the exponential damping function with the coefficients determined above. Therefore, precise charged rate of the secondary battery can be calculated from the precise convergent value of the open circuit voltage

摘要翻译： 用于计算二次电池的充电速率的方法旨在计算向负载提供电力的二次电池的充电速率，并且包括在终止后的预定时间段内多次测量二次电池的电压的步骤 充电或放电的步骤，通过利用多个测量电压值的递归计算来确定近似二次电池的开路电压的时间特性的二次或更多指数衰减函数的系数的步骤，以及计算收敛值的步骤 从至少具有上述确定的系数的指数阻尼函数得到二次电池的开路电压。 因此，可以根据开路电压的精确收敛值来计算二次电池的精确充电率

公开(公告)号：US20060113971A1

公开(公告)日：2006-06-01

申请号：US11267332

申请日：2005-11-07

申请人： Yuichi Watanabe ,  Takashi Iijima

发明人： Yuichi Watanabe ,  Takashi Iijima

IPC分类号： G05F1/56

CPC分类号： H02M7/003 ,  H01L29/2003 ,  H01L29/7787 ,  H02M3/00 ,  Y02B70/1483

摘要： A power supply apparatus includes a diode that is disposed in the path of a main current that is a subject of power control. The diode includes a substrate; a gallium-nitride buffer layer formed on the substrate; a gallium-nitride layer formed on the gallium-nitride buffer layer; and an n-type aluminum-gallium-nitride layer formed on the gallium-nitride layer.

摘要翻译： 电源装置包括设置在作为电力控制对象的主电流的路径中的二极管。 二极管包括基板; 形成在所述基板上的氮化镓缓冲层; 形成在氮化镓缓冲层上的氮化镓层; 以及形成在氮化镓层上的n型铝 - 氮化镓层。

公开(公告)号：US20060095602A1

公开(公告)日：2006-05-04

申请号：US11259271

申请日：2005-10-27

申请人： Yuichi Watanabe

发明人： Yuichi Watanabe

IPC分类号： G06F3/00

CPC分类号： H04N1/00204 ,  G06F3/1222 ,  G06F3/1238 ,  G06F3/1284 ,  H04N1/00347 ,  H04N1/0096 ,  H04N2201/0013 ,  H04N2201/0015 ,  H04N2201/0094

摘要： A multi-function system in which one of plural peripheral apparatuses is connected as a parent peripheral apparatus to an upper apparatus having a peripheral apparatus driver for making the peripheral apparatuses operative and the residual peripheral apparatuses are connected as child peripheral apparatuses to the parent peripheral apparatus. The parent peripheral apparatus has a descriptor transmitting unit which forms and transmits peripheral apparatus descriptors to device-define the parent and child peripheral apparatuses. The upper apparatus has a first control unit which activates the corresponding driver every descriptor reception and gives ID information and a data communicating unit which forms and transmits ID communication data for specifying a transmission destination of communication data to each peripheral apparatus. The parent peripheral apparatus has a peripheral apparatus control unit which analyzes the received ID communication data to discriminate a transfer destination and transfers the communication data.

摘要翻译： 将多个外围设备中的一个作为父外围设备连接到具有外围设备驱动程序的上位装置的多功能系统，并且剩余外围设备作为子外围设备连接到父外围设备 。 父外围设备具有描述符发送单元，其形成并发送外围设备描述符以设备定义父和外围设备。 上位装置具有第一控制单元，其每个描述符接收激活对应的驱动器，并给出ID信息;以及数据通信单元，其形成并发送用于指定通信数据的发送目的地的ID通信数据给每个外围设备。 父外围设备具有外围设备控制单元，其分析接收的ID通信数据以区分传送目的地并传送通信数据。

公开(公告)号：US20060001900A1

公开(公告)日：2006-01-05

申请号：US11165262

申请日：2005-06-23

申请人： Yuichi Watanabe ,  Kenichi Machiyama

发明人： Yuichi Watanabe ,  Kenichi Machiyama

IPC分类号： G06F15/00

CPC分类号： H04N1/4413 ,  H04N1/4433 ,  H04N2201/0094

摘要： A composite system includes an image-inputting apparatus and an image-outputting apparatus. The image-inputting apparatus includes a receiving section and first decision section. The receiving section receives an identification. The first decision section compares the identification with identifications that have been registered previously in the image-inputting apparatus, thereby determining whether the identification should be permitted to use the image-inputting apparatus. The identification is transmitted to the image outputting apparatus. The image outputting apparatus includes a second decision section. The second decision section compares the identification with identifications that have been registered previously in the image outputting apparatus, thereby determining whether the identification should be permitted to use the image-outputting apparatus. A replay indicative of the second determination is transmitted to the image-inputting apparatus. The image is outputted to the image-outputting apparatus in accordance with the determination made by said first decision section and the reply.

公开(公告)号：US20050224794A1

公开(公告)日：2005-10-13

申请号：US11087742

申请日：2005-03-24

申请人： Naoaki Tanaka ,  Yuji Tsukada ,  Yuichi Watanabe

发明人： Naoaki Tanaka ,  Yuji Tsukada ,  Yuichi Watanabe

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/78 ,  H01L29/04

CPC分类号： H01L21/32137 ,  H01L21/02087 ,  H01L21/32115 ,  H01L21/7684

摘要： The invention provides a method of forming an electrode or wiring which prevents reattachment of an etching residue in following processes by removing the etching residue at a bevel portion of a semiconductor wafer. An insulation film is formed so as to cover a front surface and a back surface of a semiconductor wafer, and then a conductive film is formed on a whole surface of the insulation film. Next, a photoresist layer is selectively formed on the conductive film by an exposure and development process. The conductive film is then selectively removed by an isotropic etching with using this photoresist layer as a mask, thereby forming an electrode or wiring of a semiconductor device. Since the electrode or the wiring of the semiconductor device is formed by isotropically etching the conductive film, a hangnail-like etching residue causing dust does not occur at the bevel portion of the wafer even though the conductive film remains on the back side of the semiconductor wafer.

摘要翻译： 本发明提供一种形成电极或布线的方法，其通过去除半导体晶片的斜面部分处的蚀刻残留物来防止在后面的过程中重新附着蚀刻残留物。 形成绝缘膜以覆盖半导体晶片的前表面和后表面，然后在绝缘膜的整个表面上形成导电膜。 接下来，通过曝光和显影处理在导电膜上选择性地形成光致抗蚀剂层。 然后通过使用该光致抗蚀剂层作为掩模的各向同性蚀刻选择性地去除导电膜，从而形成半导体器件的电极或布线。 由于半导体器件的电极或布线通过各向同性地蚀刻导电膜而形成，因此即使导电膜保留在半导体的背面，也不会在晶片的斜面部分处产生引起灰尘的吊坠状蚀刻残留物 晶圆。