公开(公告)号：US20120240857A1

公开(公告)日：2012-09-27

申请号：US13239541

申请日：2011-09-22

申请人： Yuichiro Morozumi ,  Izumi Sato

发明人： Yuichiro Morozumi ,  Izumi Sato

IPC分类号： C23C16/46

CPC分类号： H01L21/67109 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/67303

摘要： A vertical heat treatment apparatus includes a reaction tube surrounded by a heating part and including a substrate holder to hold substrates; and a process gas feed part having gas ejection openings to feed a process gas onto the substrates. The reaction tube has an exhaust opening at a position opposite to the gas ejection openings relative to the center of the reaction tube. The substrate holder includes circular holding plates stacked in layers and each having substrate placement regions; and support rods supporting the holding plates and provided in a circumferential direction of the holding plates to penetrate through the holding plates with the outside positions of the support rods being at the same radial position as the outer edges of the holding plates or at a radial position inside the outer edges of the holding plates relative to the center of the reaction tube.

摘要翻译： 立式热处理设备包括由加热部分包围的反应管，并包括用于保持基板的基板保持件; 以及具有气体喷射口的工艺气体供给部，用于将工艺气体供给到基板上。 反应管在与气体喷射口相对的位置处具有相对于反应管中心的排气口。 衬底保持器包括层叠并且各自具有衬底放置区域的圆形保持板; 以及支撑杆，其支撑保持板并且在保持板的圆周方向上设置成穿过保持板，其中支撑杆的外部位置处于与保持板的外边缘相同的径向位置或径向位置 在保持板的外边缘内相对于反应管的中心。

公开(公告)号：US09103029B2

公开(公告)日：2015-08-11

申请号：US13161874

申请日：2011-06-16

申请人： Yu Wamura ,  Yuichiro Morozumi ,  Izumi Sato ,  Shinji Asari

发明人： Yu Wamura ,  Yuichiro Morozumi ,  Izumi Sato ,  Shinji Asari

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/673

CPC分类号： C23C16/4412 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/67303

摘要： A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means.

摘要翻译： 一种用于处理物体的处理装置，包括：处理容器结构，其具有底部开口并且包括具有用于容纳物体的处理空间的处理容器，所述容器在处理空间的一侧具有喷嘴容纳区域和狭缝状 排气口在处理空间的与喷嘴外壳区域相反的一侧; 用于封闭处理容器结构的底部开口的盖子; 支撑结构，用于支撑物体并且可以插入处理容器结构中并从处理容器结构中取出; 气体引入装置，包括容纳在喷嘴容纳区域中的气体喷嘴; 排气装置，包括用于排出处理容器结构中的气氛的多个排气系统; 用于加热物体的加热装置; 以及用于控制气体引入装置，排气装置和加热装置的控制装置。

公开(公告)号：US20110312188A1

公开(公告)日：2011-12-22

申请号：US13161874

申请日：2011-06-16

申请人： Yu WAMURA ,  Yuichiro Morozumi ,  Izumi Sato ,  Shinji Asari

发明人： Yu WAMURA ,  Yuichiro Morozumi ,  Izumi Sato ,  Shinji Asari

IPC分类号： C23C16/455 ,  H01L21/30 ,  H01L21/306

CPC分类号： C23C16/4412 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/67303

摘要： A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means.

摘要翻译： 一种用于处理物体的处理装置，包括：处理容器结构，其具有底部开口并且包括具有用于容纳物体的处理空间的处理容器，所述容器在处理空间的一侧具有喷嘴容纳区域和狭缝状 排气口在处理空间的与喷嘴外壳区域相反的一侧; 用于封闭处理容器结构的底部开口的盖子; 支撑结构，用于支撑物体并且可以插入处理容器结构中并从处理容器结构中取出; 气体引入装置，包括容纳在喷嘴容纳区域中的气体喷嘴; 排气装置，包括用于排出处理容器结构中的气氛的多个排气系统; 用于加热物体的加热装置; 以及用于控制气体引入装置，排气装置和加热装置的控制装置。

公开(公告)号：US20110303152A1

公开(公告)日：2011-12-15

申请号：US13159954

申请日：2011-06-14

申请人： Shinji ASARI ,  Izumi Sato ,  Yuichiro Morozumi

发明人： Shinji ASARI ,  Izumi Sato ,  Yuichiro Morozumi

IPC分类号： C23C16/46 ,  C23C16/458

CPC分类号： H01L21/67303 ,  H01L21/67109 ,  H01L21/67309

摘要： A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plurality of support posts connecting the top plate section and the bottom section, wherein a plurality of support portions for supporting the objects to be processed are formed in each support post at a predetermined pitch along the longitudinal direction, and the distance between the topmost support portion of the support portions of each support post and the top plate section as well as the distance between the lowermost support portion of the support portions of each support post and the bottom section are set not more than the pitch of the support portions. The support structure can prevent the occurrence of a turbulent gas flow in the top and bottom areas of the processing container structure.

摘要翻译： 一种支撑结构，用于支撑待处理的多个物体并且被布置在处理气体从一侧向相对侧流动的处理容器结构中，包括顶板部分; 底部; 以及连接顶板部和底部的多个支撑柱，其中，用于支撑待处理物体的多个支撑部分沿着纵向方向以预定间距形成在每个支撑柱中，并且最上面的距离 每个支撑柱和顶板部分的支撑部分的支撑部分以及每个支撑柱的支撑部分的最下部支撑部分与底部之间的距离设定为不大于支撑部分的间距。 支撑结构可以防止处理容器结构的顶部和底部区域中产生紊流气流。

公开(公告)号：US06313047B2

公开(公告)日：2001-11-06

申请号：US09811451

申请日：2001-03-20

申请人： Kazuhide Hasebe ,  Yuichiro Morozumi ,  Dong-Kyun Choi ,  Takuya Sugawara ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhide Hasebe ,  Yuichiro Morozumi ,  Dong-Kyun Choi ,  Takuya Sugawara ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L2131

CPC分类号： H01L21/02183 ,  C23C16/0272 ,  C23C16/405 ,  H01L21/02271 ,  H01L21/31604

摘要： Disclosed is an MOCVD method of forming a tantalum oxide film. First, water vapor used as an oxidizing agent is supplied into a process container to cause moisture to be adsorbed on a surface of each semiconductor wafer. Then, PET gas used as a raw material gas is supplied into the process container and is caused to react with the moisture on the wafer at a process temperature of 200° C., thereby forming an interface layer of tantalum oxide. Then, PET gas and oxygen gas are supplied into the process container at the same time, and are caused to react with each other at a process temperature of 410° C., thereby forming a main layer of tantalum oxide on the interface layer.

摘要翻译： 公开了一种形成氧化钽膜的MOCVD方法。 首先，将作为氧化剂使用的水蒸气供给到处理容器中，使得水分吸附在各半导体晶片的表面上。 然后，将作为原料气体使用的PET气体供给到处理容器中，并在200℃的处理温度下与晶片上的水分反应，由此形成氧化钽界面层。 然后，将PET气体和氧气同时供给到处理容器中，并在410℃的处理温度下彼此反应，从而在界面层上形成氧化钽的主层。

公开(公告)号：US09034718B2

公开(公告)日：2015-05-19

申请号：US13571559

申请日：2012-08-10

申请人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yuichiro Morozumi

发明人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yuichiro Morozumi

IPC分类号： H01L21/02 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L28/91 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/10852

摘要： Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.

摘要翻译： 提供能够防止具有柱状并且密集布置的电极的破坏的半导体器件。 具有场效应晶体管和具有柱状电容器的半导体器件，该半导体器件包括：具有柱状并与该场效应晶体管的杂质扩散区电连接的第一电极; 至少在所述第一电极的一侧形成的电介质膜; 形成在电介质膜上的第二电极; 以及在与具有柱状的第一电极的长度方向交叉的方向上延伸的支撑膜，并且通过贯穿第二电极的至少一部分而与第一电极连接的添加硼的氮化硅膜形成。

公开(公告)号：US09230799B2

公开(公告)日：2016-01-05

申请号：US13981048

申请日：2012-01-23

申请人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

发明人： Akinobu Teramoto ,  Hiroshi Kambayashi ,  Hirokazu Ueda ,  Yuichiro Morozumi ,  Katsushige Harada ,  Kazuhide Hasebe ,  Tadahiro Ohmi

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/778 ,  H01L29/423 ,  H01L23/00 ,  H01L29/205 ,  H01L29/51

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

摘要翻译： 一种制造半导体器件的方法，该半导体器件包括构成半导体层并包括形成栅极绝缘膜的GaN（氮化镓），其中在氮化物层上形成选自SiO 2膜和Al 2 O 3膜中的至少一种膜 通过使用微波等离子体形成含GaN的GaN，并且将形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US08735304B2

公开(公告)日：2014-05-27

申请号：US13429742

申请日：2012-03-26

申请人： Yuichiro Morozumi ,  Takuya Sugawara ,  Koji Akiyama ,  Shingo Hishiya ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yuichiro Morozumi ,  Takuya Sugawara ,  Koji Akiyama ,  Shingo Hishiya ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02189 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45529 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/66181

摘要： A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

摘要翻译： 形成包括氧化锆膜的电介质膜的方法包括：通过提供锆材料和氧化剂在待处理的基板上形成氧化锆膜，所述锆材料包括包含结构中的环戊二烯基环的Zr化合物， 并且通过供给钛材料和氧化剂在氧化锆膜上形成氧化钛膜，所述钛材料包括结构中包含环戊二烯基环的Ti化合物。

公开(公告)号：US08389421B2

公开(公告)日：2013-03-05

申请号：US13115601

申请日：2011-05-25

申请人： Katsushige Harada ,  Yuichiro Morozumi ,  Shingo Hishiya

发明人： Katsushige Harada ,  Yuichiro Morozumi ,  Shingo Hishiya

IPC分类号： H01L21/316

CPC分类号： H01L21/02189 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/40

摘要： When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film.

摘要翻译： 当待加工物体被转移到能够保持真空的处理室中并且处理室的内部保持在真空状态时，成膜方法包括在待加工物体上通过供给来形成第一ZrO膜 锆材料和氧化剂，按照上述顺序，通过以上述顺序供给锆材料，硅材料和氧化剂，在待处理物体上形成掺杂有Si的第二ZrO膜， 以这样的方式分别进行处理室中多次进行第一ZrO膜的形成和进行第二ZrO膜的形成次数，形成具有规定的氧化锆系膜的氧化锆系膜 同时控制膜中的Si浓度。

公开(公告)号：US08288241B2

公开(公告)日：2012-10-16

申请号：US13245515

申请日：2011-09-26

申请人： Toshiyuki Hirota ,  Takakazu Kiyomura ,  Yuichiro Morozumi ,  Shingo Hishiya

发明人： Toshiyuki Hirota ,  Takakazu Kiyomura ,  Yuichiro Morozumi ,  Shingo Hishiya

IPC分类号： H01L21/02

CPC分类号： H01L28/40 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228

摘要： To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14 atoms/cm2. Further, to achieve the area density, there is employed a combination of formation of a dielectric film using a general ALD method and Al doping using an adsorption site blocking ALD method including adsorbing a blocker molecule restricting an adsorption site of an Al source, adsorbing the Al source, and introducing a reaction gas for reaction.

摘要翻译： 为了提供具有良好结晶性的电介质膜，同时抑制尺寸效应的影响并且防止电介质膜被Al掺杂层划分，尽管提供了用于改善电介质膜中的泄漏特性的Al掺杂层 电介质膜具有至少一个Al掺杂层，并且Al掺杂层的一层中的Al原子的面密度小于1.4E + 14原子/ cm 2。 此外，为了实现面积密度，采用通常的ALD法形成电介质膜和使用吸附位阻挡ALD法的Al掺杂的组合，其包括吸附限制Al源的吸附位点的阻断分子，吸附 Al源，并引入反应气体进行反应。