Charged Particle Beam Orbit Corrector and Charged Particle Beam Apparatus
    4.
    发明申请
    Charged Particle Beam Orbit Corrector and Charged Particle Beam Apparatus 有权
    带电粒子束轨道校正器和带电粒子束装置

    公开(公告)号:US20080116391A1

    公开(公告)日:2008-05-22

    申请号:US11943241

    申请日:2007-11-20

    IPC分类号: G21K1/087 G21K1/093

    摘要: The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.

    摘要翻译: 本发明涉及一种用于带电粒子束的轨道校正方法,其目的在于解决常规像差校正系统中固有的问题,并提供一种用于带电粒子束的低成本,高精度,高分辨率的聚光系统。 为此,所采用的是波束轨道受环形形式限制以形成朝向光束轨道中心收敛的电磁场分布的结构。 因此,可以抵消以电子透镜的球面像差为代表的向外扩大的非线性动作。 具体地说,这种效果可以通过设置在轴上的电子元件实现,并且经受电压以便于静电聚焦的发生。 对于磁场,这种效果可以通过在旋转方向上等角地分割的表面上形成径向分布缠绕的线圈来实现,以控制磁通密度的收敛。

    Charged particle beam apparatus
    5.
    发明申请
    Charged particle beam apparatus 审中-公开
    带电粒子束装置

    公开(公告)号:US20060151698A1

    公开(公告)日:2006-07-13

    申请号:US11311278

    申请日:2005-12-20

    IPC分类号: G21K7/00

    摘要: A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

    摘要翻译: 提供具有高分辨率和宽扫描区域(观察视场)的带电粒子束装置。 该装置具有用于调节焦点的单元,用于调节散光的单元,用于控制和检测扫描位置的单元,以及控制器,用于与扫描位置互锁地控制焦点调节和像散调整,由此确保相容性 在高分辨率和广域的观察视野之间。

    Charged particle beam apparatus
    7.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号:US08324594B2

    公开(公告)日:2012-12-04

    申请号:US12370242

    申请日:2009-02-12

    IPC分类号: G01F23/00 G21K5/08 G21K5/10

    摘要: A charged particle beam apparatus can be constructed with a smaller size (resulting in a small installation space) and a lower cost, suppress vibration, operate at higher speed, and be reliable in inspection. The charged particle beam apparatus is largely effective when a wafer having a large diameter is used. The charged particle beam apparatus includes: a plurality of inspection mechanisms, each of which is mounted on a vacuum chamber and has a charged particle beam mechanism for performing at least an inspection on the sample; a single-shaft transfer mechanism that moves the sample between the inspection mechanisms in the direction of an axis of the single-shaft transfer mechanism; and a rotary stage that mounts the sample thereon and has a rotational axis on the single-shaft transfer mechanism. The single-shaft transfer mechanism moves the sample between the inspection mechanisms in order that the sample is placed under any of the inspection mechanisms. The rotary stage positions the sample such that a target portion of the sample can be inspected by the inspection mechanism under which the sample is placed, and the inspection mechanisms inspect the sample.

    摘要翻译: 带电粒子束装置可以以较小的尺寸(导致小的安装空间)和较低的成本,抑制振动,更高的速度运行并且可靠地进行检查。 当使用具有大直径的晶片时,带电粒子束装置很有效。 带电粒子束装置包括:多个检查机构,每个检查机构安装在真空室上,并具有至少对样品进行检查的带电粒子束机构; 单轴传送机构,其在所述检查机构之间沿所述单轴传送机构的轴线的方向移动所述样本; 以及将样品安装在其上并在单轴传送机构上具有旋转轴的旋转台。 单轴传送机构将样品移动到检查机构之间,以便将样品放置在任何检查机构下。 旋转台定位样品,使得样品的目标部分可以通过放置样品的检查机构进行检查,检查机构检查样品。

    Charged particle beam apparatus
    8.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号:US08207513B2

    公开(公告)日:2012-06-26

    申请号:US12615955

    申请日:2009-11-10

    IPC分类号: G21K5/10

    摘要: A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

    摘要翻译: 提供具有高分辨率和宽扫描区域(观察视场)的带电粒子束装置。 该装置具有用于调节焦点的单元,用于调节散光的单元,用于控制和检测扫描位置的单元,以及控制器,用于与扫描位置互锁地控制焦点调节和像散调整,由此确保相容性 在高分辨率和广域的观察视野之间。

    Semiconductor wafer inspection tool and semiconductor wafer inspection method
    10.
    发明授权
    Semiconductor wafer inspection tool and semiconductor wafer inspection method 失效
    半导体晶圆检查工具和半导体晶圆检查方法

    公开(公告)号:US07728294B2

    公开(公告)日:2010-06-01

    申请号:US11808247

    申请日:2007-06-07

    IPC分类号: H01J37/21 H01J37/26

    摘要: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.

    摘要翻译: 提供能够在适当条件下进行NVC(负电压对比度)模式和PVC(正电压对比度)模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。 将一次电子2照射到要检查的晶片6上,并且其XY照射位置被扫描。 来自待检查晶片的二次电子(或反射电子)10由充电控制电极5控制并由传感器11检测。图像处理器将来自传感器11的检测信号转换为检测图像, 通过预定的参考图像判断缺陷,总体控制部分14从每个要检查的晶片的配方信息中选择检查条件6并设置要施加到充电控制电极5的电压.Za级8设置晶片之间的距离 根据该电压检查6和充电控制电极5。