公开(公告)号：US20130005090A1

公开(公告)日：2013-01-03

申请号：US13610460

申请日：2012-09-11

申请人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

发明人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

IPC分类号： H01L21/78

CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device manufacturing method includes cutting a resin sealing body into a plurality of pieces, the resin sealing body including a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and a sealing resin filled between the wiring board and the heat spreader, wherein the cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader, and shaving the resin sealing body from a side of the wiring board, wherein the shaving the resin sealing body from the side of the wiring board is carried out after the shaving from the side of the heat spreader, and wherein the resin sealing body is completely cut off by the shaving from the side of the wiring board, and mounting a group of ball-like electrodes at a back side of the wiring board.

摘要翻译： 半导体器件制造方法包括将树脂密封体切割成多个片，所述树脂密封体包括安装在布线板上的多个半导体芯片，设置在所述多个半导体芯片上方的散热器和填充有密封树脂的密封树脂 在布线板和散热器之间，其中切割树脂密封体包括从散热器一侧剃刮树脂密封体，并从树脂密封体从布线板的一侧剃刮，其中剃须树脂密封 在从散热器侧刮取之后，从布线基板侧进行本体的剥离，并且，通过从布线基板的侧面进行的刮削将树脂密封体完全切断， 在电路板背面的电极。

公开(公告)号：US20110104872A1

公开(公告)日：2011-05-05

申请号：US12929291

申请日：2011-01-12

申请人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

发明人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

IPC分类号： H01L21/82

CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device manufacturing method includes cutting a resin sealing body into a plurality of pieces, in which the resin sealing body includes a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and a sealing resin filled between the wiring board and the heat spreader. The cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader, and shaving the resin sealing body from a side of the wiring board. The shaving the resin sealing body from the side of the heat spreader includes etching the heat spreader.

摘要翻译： 半导体器件制造方法包括将树脂密封体切割成多个片，其中树脂密封体包括安装在布线板上的多个半导体芯片，设置在多个半导体芯片上方的散热器，以及密封 填充在布线板和散热器之间的树脂。 切割树脂密封体包括从散热器的侧面刮削树脂密封体，并从树脂密封体从布线板的一侧剃刮。 从散热器一侧对树脂密封体进行剃刮的步骤包括：对散热器进行蚀刻。

公开(公告)号：US20100105170A1

公开(公告)日：2010-04-29

申请号：US12588542

申请日：2009-10-19

申请人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

发明人： Yuko Sato ,  Takehiko Maeda ,  Fumiyoshi Kawashiro

IPC分类号： H01L21/78

CPC分类号： H01L21/561 ,  H01L23/3128 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a semiconductor device includes cutting a resin sealing body into a plurality of pieces. The resin sealing body includes a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and sealing resin filled between the wiring board and the heat spreader. The cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader and shaving the resin sealing body from a side of the wiring board. The method prevents the heat spreader from generation of burrs.

摘要翻译： 一种半导体装置的制造方法，其特征在于，将树脂密封体切断成多片。 树脂密封体包括安装在布线板上的多个半导体芯片，设置在多个半导体芯片上方的散热器以及填充在布线板和散热器之间的密封树脂。 切割树脂密封体包括从散热器一侧剃刮树脂密封体并且从布线板的一侧剃刮树脂密封体。 该方法防止散热器产生毛刺。

公开(公告)号：US08232652B2

公开(公告)日：2012-07-31

申请号：US13053969

申请日：2011-03-22

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49816 ,  H01L23/49894 ,  H01L24/48 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: an interconnection substrate on which a semiconductor chip is mounted; electrodes formed on a surface of the interconnection substrate; and solder bumps formed on the electrodes. The solder bump includes a base section and a surface layer section that covers the base section. The surface layer section includes conductive metal selected from the group consisting of Cu, Ni, Au, and Ag, and Sn at least and a ratio of the number of atoms of the conductive metal to the number of Sn atoms per a unit volume is more than 0.01.

摘要翻译： 半导体器件包括：其上安装半导体芯片的互连衬底; 形成在所述互连基板的表面上的电极; 以及形成在电极上的焊料凸块。 焊料凸块包括基部和覆盖基部的表面层部分。 表层部分包括选自由Cu，Ni，Au和Ag组成的组的导电金属，Sn至少导电金属的原子数与每单位体积的Sn原子数之比更大 大于0.01。

公开(公告)号：US08071472B2

公开(公告)日：2011-12-06

申请号：US12706440

申请日：2010-02-16

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： H01L21/44

CPC分类号： H05K3/244 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H05K3/3463 ,  H01L2924/00

摘要： A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn—Ag—Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn—Ag—Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.

摘要翻译： 半导体器件包括衬底，金属层，合金层和Sn-Ag-Cu基焊球。 金属层构造成形成在基板上。 合金层构造成形成在金属层上。 Sn-Ag-Cu系焊球配置在合金层上。 合金层包括Ni和Zn作为必需元素。

公开(公告)号：US20110042802A1

公开(公告)日：2011-02-24

申请号：US12805203

申请日：2010-07-19

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/1358 ,  H01L2224/48091 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/0105

摘要： A semiconductor device includes an electrode pad and an external connection terminal. The external connection terminal contains Sn equal to or more than 50 wt %, Sn and Pb equal to or more than 90 wt % in total, or Pb equal to or more than 85 wt %, and the surface thereof is coated with an Au layer. The thickness of the Au layer is preferably equal to or more than 10 nm and equal to or less than 1 μm. The weight of the Au layer is preferably equal to or less than 0.6% of the weight of the external connection terminal.

摘要翻译： 半导体器件包括电极焊盘和外部连接端子。 外部连接端子包含Sn等于或大于50重量％，Sn和Pb总计等于或大于90重量％，或等于或大于85重量％的Pb，并且其表面涂覆有Au层 。 Au层的厚度优选为10nm以上且1μm以下。 Au层的重量优选等于或小于外部连接端子的重量的0.6％。

公开(公告)号：US07701061B2

公开(公告)日：2010-04-20

申请号：US11553916

申请日：2006-10-27

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H05K3/244 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H05K3/3463 ,  H01L2924/00

摘要： A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn—Ag—Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn—Ag—Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.

摘要翻译： 半导体器件包括衬底，金属层，合金层和Sn-Ag-Cu基焊球。 金属层构造成形成在基板上。 合金层构造成形成在金属层上。 Sn-Ag-Cu系焊球配置在合金层上。 合金层包括Ni和Zn作为必需元素。

公开(公告)号：US07944051B2

公开(公告)日：2011-05-17

申请号：US12177458

申请日：2008-07-22

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/81 ,  H01L23/60 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13553 ,  H01L2224/13566 ,  H01L2224/13686 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/81026 ,  H01L2224/81047 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/15311 ,  H05K3/3457 ,  H05K2203/0221 ,  H05K2203/0315 ,  H01L2924/01083 ,  H01L2924/053 ,  H01L2224/29099 ,  H01L2924/00

摘要： In one embodiment, a semiconductor device has a semiconductor element made up of a semiconductor chip, first solder balls provided on the semiconductor chip and a BGA substrate on which the semiconductor chip is mounted via the first solder balls. Furthermore, the semiconductor device has external terminals on a surface of the BGA substrate opposing to a surface on which the semiconductor chip is mounted. The external terminals include oxide films provided with through holes.

摘要翻译： 在一个实施例中，半导体器件具有由半导体芯片，设置在半导体芯片上的第一焊球和经由第一焊球安装半导体芯片的BGA基板构成的半导体元件。 此外，半导体器件在BGA衬底的与安装有半导体芯片的表面相对的表面上具有外部端子。 外部端子包括设置有通孔的氧化物膜。

公开(公告)号：US20090230175A1

公开(公告)日：2009-09-17

申请号：US12382054

申请日：2009-03-06

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： B23K1/20 ,  B23K35/34

CPC分类号： B23K1/0016 ,  B23K35/262 ,  B23K35/3613 ,  B23K35/3618 ,  H05K3/3436 ,  H05K3/3478 ,  H05K3/3489 ,  H05K2203/041 ,  H05K2203/122

摘要： A flux for soldering of the present invention, in connecting a mounting pad exposed on a board to a solder ball, is applied onto at least one of a surface of the mounting pad and the solder ball. The flux for soldering contains a solvent, and the solvent contains a compound, which is represented by a general formula (1) and having a boiling point of 218° C. or higher and 240° C. or lower: R1-R2n-OH . . . (1).

摘要翻译： 本发明的焊接用焊剂，在将露出在基板上的安装焊盘与焊球接合时，被施加到安装焊盘和焊球的表面中的至少一个上。 用于焊接的焊剂含有溶剂，溶剂含有由通式（1）表示的沸点为218℃以上且240℃以下的化合物：R1-R2n-OH 。 。 。 （1）。

公开(公告)号：US20090026615A1

公开(公告)日：2009-01-29

申请号：US12177458

申请日：2008-07-22

申请人： Fumiyoshi Kawashiro

发明人： Fumiyoshi Kawashiro

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/81 ,  H01L23/60 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13553 ,  H01L2224/13566 ,  H01L2224/13686 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/81026 ,  H01L2224/81047 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/15311 ,  H05K3/3457 ,  H05K2203/0221 ,  H05K2203/0315 ,  H01L2924/01083 ,  H01L2924/053 ,  H01L2224/29099 ,  H01L2924/00

摘要： In one embodiment, a semiconductor device has a semiconductor element made up of a semiconductor chip, first solder balls provided on the semiconductor chip and a BGA substrate on which the semiconductor chip is mounted via the first solder balls. Furthermore, the semiconductor device has external terminals on a surface of the BGA substrate opposing to a surface on which the semiconductor chip is mounted. The external terminals include oxide films provided with through holes.

摘要翻译： 在一个实施例中，半导体器件具有由半导体芯片，设置在半导体芯片上的第一焊球和经由第一焊球安装半导体芯片的BGA基板构成的半导体元件。 此外，半导体器件在BGA衬底的与安装有半导体芯片的表面相对的表面上具有外部端子。 外部端子包括设置有通孔的氧化物膜。