公开(公告)号：US07910884B2

公开(公告)日：2011-03-22

申请号：US12349059

申请日：2009-01-06

申请人： Zhaohui Cheng ,  Natsuki Tsuno

发明人： Zhaohui Cheng ,  Natsuki Tsuno

IPC分类号： G01N23/22 ,  G21K7/00 ,  H01J37/256

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2817

摘要： An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection.

摘要翻译： 带电控制电极B安装在充电控制电极A的测量或检查样品侧，并根据试样的带电状态从充电控制电极B的带电控制电极控制部分施加恒定电压，由此 在检查之前形成的试样表面的带电状态和势垒的变化被抑制。 由充电控制电极施加延迟电位，并且通电控制电极B设置在调节到与试样相同电位的充电控制电极A的下方。 结果，可以调节从诸如照射一次电子束的晶片等试样的二次电子返回到试样的量，从而可以稳定地维持高灵敏度的检查条件 检查。

公开(公告)号：US07633303B2

公开(公告)日：2009-12-15

申请号：US12062940

申请日：2008-04-04

申请人： Takashi Furukawa ,  Natsuki Tsuno ,  Zhaohui Cheng

发明人： Takashi Furukawa ,  Natsuki Tsuno ,  Zhaohui Cheng

IPC分类号： G01R31/305

CPC分类号： G01R31/307 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2817

摘要： Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown.

摘要翻译： 提高了绝缘子样品的充电处理效率。 并且，根据绝缘子样品的接触电阻值调整电子光学系统。 在充电处理之前进行样品的分解，然后进行充电处理。 使用用于检查击穿的样品的电阻值的结果来选择电子光学系统的控制参数。

公开(公告)号：US20080246497A1

公开(公告)日：2008-10-09

申请号：US12062940

申请日：2008-04-04

申请人： Takashi Furukawa ,  Natsuki Tsuno ,  Zhaohui Cheng

发明人： Takashi Furukawa ,  Natsuki Tsuno ,  Zhaohui Cheng

IPC分类号： G01R31/305 ,  G01N23/22

CPC分类号： G01R31/307 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2817

摘要： Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown.

摘要翻译： 提高了绝缘子样品的充电处理效率。 并且，根据绝缘子样品的接触电阻值调整电子光学系统。 在充电处理之前进行样品的分解，然后进行充电处理。 使用用于检查击穿的样品的电阻值的结果来选择电子光学系统的控制参数。

公开(公告)号：US08309923B2

公开(公告)日：2012-11-13

申请号：US13148864

申请日：2010-02-09

申请人： Seiko Omori ,  Zhaohui Cheng ,  Hideyuki Kazumi

发明人： Seiko Omori ,  Zhaohui Cheng ,  Hideyuki Kazumi

IPC分类号： H01J37/28 ,  G01N23/04

CPC分类号： G01B15/04 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2817

摘要： Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction (707) of an electron beam is judged regarding an edge (708) of a pattern to be observed (S702); if the edge is present, an area in the vicinity of the pattern edge is designated as a local pre-dose area (709) (S703); a local pre-dose of an electron beam is performed, so that the initial charged state is controlled not to return secondary electrons generated by irradiation of an electron beam when an image is captured, to the surface of a sample.

摘要翻译： 提供了一种对吞吐量的影响最小化的样本观察方法，即使在复杂的LSI图案中也可以以高精度获得图案轮廓，而与电子束的扫描方向无关。 在样本观察方法中，关于要观察的图案的边缘（708）判断是否存在与电子束的扫描方向（707）平行的边缘（S702）。 如果存在边缘，则将图案边缘附近的区域指定为局部剂量前区域（709）（S703）; 执行电子束的局部预先剂量，使得初始充电状态被控制为不将通过将图像捕获时的电子束的照射产生的二次电子返回到样品的表面。

公开(公告)号：US07547884B2

公开(公告)日：2009-06-16

申请号：US11449650

申请日：2006-06-09

申请人： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

发明人： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/026 ,  G01R31/307 ,  H01J37/29 ,  H01J2237/0045 ,  H01J2237/0047 ,  H01J2237/045 ,  H01J2237/2594 ,  H01J2237/2817

摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

摘要翻译： 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

公开(公告)号：US20060151698A1

公开(公告)日：2006-07-13

申请号：US11311278

申请日：2005-12-20

申请人： Yuko Sasaki ,  Yasuhiro Gunji ,  Zhaohui Cheng

发明人： Yuko Sasaki ,  Yasuhiro Gunji ,  Zhaohui Cheng

IPC分类号： G21K7/00

CPC分类号： H01J37/28 ,  H01J37/153 ,  H01J37/21 ,  H01J37/222 ,  H01J37/265 ,  H01J2237/141 ,  H01J2237/1532 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/2817

摘要： A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.

摘要翻译： 提供具有高分辨率和宽扫描区域（观察视场）的带电粒子束装置。 该装置具有用于调节焦点的单元，用于调节散光的单元，用于控制和检测扫描位置的单元，以及控制器，用于与扫描位置互锁地控制焦点调节和像散调整，由此确保相容性 在高分辨率和广域的观察视野之间。

公开(公告)号：US09830524B2

公开(公告)日：2017-11-28

申请号：US14239803

申请日：2012-05-24

申请人： Tomoko Sekiguchi ,  Takeyoshi Ohashi ,  Junichi Tanaka ,  Zhaohui Cheng ,  Ruriko Tsuneta ,  Hiroki Kawada ,  Seiko Hitomi

发明人： Tomoko Sekiguchi ,  Takeyoshi Ohashi ,  Junichi Tanaka ,  Zhaohui Cheng ,  Ruriko Tsuneta ,  Hiroki Kawada ,  Seiko Hitomi

IPC分类号： G01N23/22 ,  G06K9/46 ,  H01J37/317 ,  G01B15/04 ,  B82Y10/00 ,  B82Y40/00 ,  G06T7/00 ,  H01L21/66

CPC分类号： G06K9/4604 ,  B82Y10/00 ,  B82Y40/00 ,  G01B15/04 ,  G01N23/22 ,  G06T7/0004 ,  H01J37/3174 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2816 ,  H01J2237/31754 ,  H01J2237/31796 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

公开(公告)号：US07928384B2

公开(公告)日：2011-04-19

申请号：US12222577

申请日：2008-08-12

申请人： Zhaohui Cheng ,  Tasuku Yano ,  Seiko Omori

发明人： Zhaohui Cheng ,  Tasuku Yano ,  Seiko Omori

IPC分类号： G01N23/00

CPC分类号： G01N23/04

摘要： A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.

摘要翻译： 一种带电粒子束装置，包括用于测量样品上的局部静电荷的功能。 初级带电粒子束扫描以镜像状态定位的样本以获取图像。 所获取的图像可以是样本的图像，或者可以是带电粒子光学系统中的结构成分的图像。 将获取的图像与标准样品图像进行比较，并测量局部静电荷。

公开(公告)号：US07714288B2

公开(公告)日：2010-05-11

申请号：US12149218

申请日：2008-04-29

申请人： Tasuku Yano ,  Zhaohui Cheng ,  Takashi Furukawa ,  Osamu Nasu

发明人： Tasuku Yano ,  Zhaohui Cheng ,  Takashi Furukawa ,  Osamu Nasu

IPC分类号： G21K7/00 ,  G21G5/00 ,  G01N23/00 ,  H01J3/14

CPC分类号： G01N23/225 ,  H01J37/026 ,  H01J37/248 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/28

摘要： Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved.

摘要翻译： 当多个帧被一体化以防止在带电粒子束装置中的样品的预定区域的图像时，防止了由一次带电粒子束的照射引起的样品表面影响的电气化。 用来自电子枪的一次电子束扫描样品的预定区域，并且用检测器检测产生的二次电子并产生并整合多个帧以获得预定区域的图像。 如果通过检测器的检测信号确定当产生多个帧时，预定区域的通电量变为规定值，则在生成多个帧之前将电去除电压施加到升压电极以去除或减少通电， 下一帧。 因此，可以提高通过对多个帧进行积分而获得的图像的信噪比。

公开(公告)号：US06952105B2

公开(公告)日：2005-10-04

申请号：US10620702

申请日：2003-07-17

申请人： Zhaohui Cheng ,  Mari Nozoe

发明人： Zhaohui Cheng ,  Mari Nozoe

IPC分类号： H01L21/66 ,  G01N23/00 ,  G01R31/302 ,  G01R31/305 ,  G06T1/00 ,  H01J37/04 ,  H01J37/147 ,  H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/2817

摘要： A pattern inspecting technique, depending on the kind of materials, can reduce damage including shrinkage to materials when the materials are prone to such damage as shrinkage and spoilage caused by electron beam irradiation. This is accomplished by scanning a sample with a primary electron beam, detecting secondary electrons generated, or electrons reflected from the semiconductor device, or both the former and latter electrons, and converting the electrons into signals, and transforming the signals into an image, displaying the image, and detecting defective spots in the circuit pattern of the sample. The irradiation density (dose per unit area) of the electron beam is monitored and limited depending on the kind of material of the circuit pattern under inspection and the inspecting conditions, and damage, such as shrinkage and spoilage to the materials during electron beam irradiation, is reduced to an allowable range.

摘要翻译： 取决于材料种类的图案检查技术可以减少材料收缩时的损伤，当材料容易受到由电子束照射引起的收缩和变质等损害时。 这是通过用一次电子束扫描样品，检测产生的二次电子或从半导体器件反射的电子，或者前者和后面的电子，并将电子转换为信号，并将信号变换为图像，显示 图像，并检测样品的电路图案中的缺陷点。 电子束的照射密度（每单位面积的剂量）根据检查中的电路图案的材料的种类和检查条件进行监测和限制，并且在电子束照射期间对材料的收缩和变质等损害， 减少到允许范围。