公开(公告)号：US20050181632A1

公开(公告)日：2005-08-18

申请号：US11095704

申请日：2005-03-30

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01L21/314 ,  H01L21/316 ,  H01L21/762 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

公开(公告)号：US20050136684A1

公开(公告)日：2005-06-23

申请号：US10746695

申请日：2003-12-23

申请人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

发明人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76837

摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

摘要翻译： 可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。 在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层， 。 在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。 在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

公开(公告)号：US20080067068A1

公开(公告)日：2008-03-20

申请号：US11523782

申请日：2006-09-19

申请人： Dongqing Li

发明人： Dongqing Li

IPC分类号： C07K1/26 ,  G01N27/00

CPC分类号： C07K1/26 ,  B03C5/005 ,  B03C5/026

摘要： The present invention relates to an apparatus and methods of separating particles or cells according to their sizes, wherein the size of each of the particles or cells is characterized by a corresponding diameter. In one embodiment, the method includes the steps of providing a microchannel structure having at least one channel that is defined by a first sidewall and a second, opposite sidewall and has an insulating protrusion formed on one of the first sidewall and the second, opposite sidewall, introducing a plurality of particles or cells in a liquid medium into the at least one channel, and generating a non-uniform electrical field in the at least one channel such that when the plurality of particles or cells passes by the insulating protrusion, the plurality of particles or cells each receives a dielectrophoretic force proportional to its diameters, thereby being separable according to their sizes. The method further has the step of collecting particles or cells after the separation of particles or cells.

摘要翻译： 本发明涉及根据其尺寸分离颗粒或细胞的装置和方法，其中每个颗粒或细胞的尺寸的特征在于相应的直径。 在一个实施例中，该方法包括以下步骤：提供具有由第一侧壁和第二相对侧壁限定的至少一个通道的微通道结构，并具有形成在第一侧壁和第二相对侧壁之一上的绝缘突起 将液体介质中的多个颗粒或细胞引入到所述至少一个通道中，并且在所述至少一个通道中产生不均匀的电场，使得当所述多个颗粒或细胞通过所述绝缘突起时，所述多个 的颗粒或细胞各自接收与其直径成比例的介电电泳力，从而根据其尺寸可分离。 该方法还具有在分离颗粒或细胞之后收集颗粒或细胞的步骤。

公开(公告)号：US07196021B2

公开(公告)日：2007-03-27

申请号：US11095704

申请日：2005-03-30

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L21/31

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。

公开(公告)号：US07795014B2

公开(公告)日：2010-09-14

申请号：US12535526

申请日：2009-08-04

申请人： Dongqing Li

发明人： Dongqing Li

IPC分类号： C12M1/22 ,  B01J19/00

CPC分类号： B01L3/50851 ,  B01L2200/0684 ,  B01L2200/12 ,  B01L2300/0819 ,  B01L2300/0829 ,  B01L2300/0887 ,  G01N21/6428 ,  G01N21/6452 ,  G01N2021/6484

摘要： A disposable reactor module, monitoring/optical detection system and related hardware for, inter alia, chemical reactions including Polymerase Chain Reactions.

摘要翻译： 一次性反应器模块，监测/光学检测系统以及用于尤其是化学反应（包括聚合酶链反应）的相关硬件。

公开(公告)号：US06908862B2

公开(公告)日：2005-06-21

申请号：US10138189

申请日：2002-05-03

申请人： Dongqing Li ,  Xiaolin C. Chen ,  Lin Zhang

发明人： Dongqing Li ,  Xiaolin C. Chen ,  Lin Zhang

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/311 ,  H01L21/316

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  Y10S438/978

摘要： A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.

摘要翻译： 一种在设置在基板处理室中的基板上沉积膜的方法。 该方法包括通过从流入处理室的第一气态混合物形成高密度等离子体沉积薄膜的第一部分。 然后停止沉积过程，并通过使卤素蚀刻剂流入处理室来蚀刻膜的部分沉积的第一部分。 接下来，通过使钝化气体流入处理室来钝化蚀刻膜的表面，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将薄膜的第二部分沉积在第一部分上 。 在一个实施方案中，钝化气体由不含惰性气体的氧源组成。

公开(公告)号：US06682603B2

公开(公告)日：2004-01-27

申请号：US10141391

申请日：2002-05-07

申请人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

发明人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

IPC分类号： C23C1600

CPC分类号： C23C16/45563 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32532 ,  H01L21/28556 ,  H01L21/67069

摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface is portion, without interfering with positioning of the substrate.

摘要翻译： 用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。 基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。 当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。 支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。 由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会妨碍定位 的基底。

公开(公告)号：US20110089328A1

公开(公告)日：2011-04-21

申请号：US12719262

申请日：2010-03-08

申请人： Dongqing Li

发明人： Dongqing Li

IPC分类号： G01T1/20 ,  G01R27/08

CPC分类号： G01N15/1056 ,  B01L3/502715 ,  B01L3/50273 ,  B01L3/502761 ,  B01L2200/0636 ,  B01L2200/10 ,  B01L2300/0864 ,  B01L2400/0421 ,  G01N15/1031

摘要： An electrokinetic microfluidic flow cytometer apparatus can include a substrate, a pair of signal and noise detection channels, and a particle detection circuit. The substrate includes an input port, an output port, and a microchannel that fluidly connects the input port and the output port to allow fluid to flow therebetween. The signal and noise detection channels are defined in the substrate and are fluidly connected to the microchannel from locations that are adjacent to each other. The signal and noise detection channels extend in opposite directions away from the microchannel to receive ambient electrical noise. The particle detection circuit is electrically connected to the signal and noise detection channels and generates a particle detection signal in response to a differential voltage across the signal and noise detection channels, which tracks changes in resistivity across an adjacent portion of the microchannel as particles within the fluid move responsive to an electric field along that portion of the microchannel, while at least substantially canceling a common component of the ambient electrical noise received by the signal and noise detection channels. A particle counting circuit counts a number of particles that move through the sensing gate in response to pulses in the particle detection signal.

摘要翻译： 电动微流体流式细胞仪装置可以包括基板，一对信号和噪声检测通道以及粒子检测电路。 衬底包括输入端口，输出端口和流体连接输入端口和输出端口以允许流体在其间流动的微通道。 信号和噪声检测通道限定在基板中，并且从彼此相邻的位置流体地连接到微通道。 信号和噪声检测通道在与微通道相反的方向上延伸以接收环境电噪声。 粒子检测电路电连接到信号和噪声检测通道，并且响应于信号和噪声检测通道上的差分电压产生粒子检测信号，该信号和噪声检测通道跟踪微通道的相邻部分的电阻率的变化， 同时至少基本上消除由信号和噪声检测通道接收的环境电噪声的共同分量。 颗粒计数电路响应于颗粒检测信号中的脉冲计数移动通过感测门的颗粒数。

公开(公告)号：US07569382B2

公开(公告)日：2009-08-04

申请号：US11543004

申请日：2006-10-04

申请人： Dongqing Li

发明人： Dongqing Li

IPC分类号： C12M1/22 ,  B01J19/00

CPC分类号： B01L3/50851 ,  B01L2200/0684 ,  B01L2200/12 ,  B01L2300/0819 ,  B01L2300/0829 ,  B01L2300/0887 ,  G01N21/6428 ,  G01N21/6452 ,  G01N2021/6484

摘要： A disposable reactor module, monitoring/optical detection system and related hardware for, inter alia, chemical reactions including Polymerase Chain Reactions.

摘要翻译： 一次性反应器模块，监测/光学检测系统以及用于尤其是化学反应（包括聚合酶链反应）的相关硬件。

公开(公告)号：US06740601B2

公开(公告)日：2004-05-25

申请号：US09854083

申请日：2001-05-11

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L2131

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.