公开(公告)号：US20200232088A1

公开(公告)日：2020-07-23

申请号：US15758837

申请日：2016-04-28

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Oliver GRAW

IPC: C23C14/35 ,  C23C14/24 ,  C23C14/34 ,  C23C14/56 ,  C23C16/54 ,  C23C14/50 ,  H01J37/34 ,  H01J37/32

Abstract: The present disclosure provides an apparatus for vacuum deposition on a substrate. The apparatus includes a vacuum chamber having a first area and a first deposition area, one or more deposition sources at the first deposition area, wherein the one or more deposition sources are configured for vacuum deposition on at least a first substrate while the at least a first substrate is transported along a first transport direction past the one or more deposition sources, and a first substrate transport unit in the first area, wherein the first substrate transport unit is configured for moving the at least a first substrate within the first area in a first track switch direction, which is different from the first transport direction.

公开(公告)号：US20170067149A1

公开(公告)日：2017-03-09

申请号：US15118810

申请日：2014-02-21

Applicant: Thomas DEPPISCH ,  Applied Materials, Inc.

Inventor： Thomas DEPPISCH

IPC: C23C14/58 ,  C23C14/24 ,  H01J37/32 ,  C23C16/50 ,  C23C16/56

CPC classification number: C23C14/5873 ,  C23C14/24 ,  C23C14/562 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/335

Abstract: According to the present disclosure, a flexible substrate coating apparatus is provided. The flexible substrate coating apparatus includes a vacuum process chamber for processing a flexible substrate. The vacuum process chamber includes one or more deposition units and a cleaning unit positioned directly downstream of the one or more deposition units. In another aspect, a method for depositing a thin-film on a flexible substrate is provided. The method for depositing a thin-film on a flexible substrate includes vacuum coating of the flexible substrate, thereby depositing one or more layers on the flexible substrate, and cleaning the flexible substrate directly downstream of the coating.

Abstract translation: 根据本公开，提供了柔性基板涂布装置。 柔性基板涂布装置包括用于处理柔性基板的真空处理室。 真空处理室包括一个或多个沉积单元和位于该一个或多个沉积单元的直接下游的清洁单元。 另一方面，提供了一种在柔性基板上沉积薄膜的方法。 用于在柔性基板上沉积薄膜的方法包括真空涂覆柔性基底，从而在柔性基底上沉积一层或多层，以及直接在涂层的下游清洁柔性基底。

公开(公告)号：US20200083452A1

公开(公告)日：2020-03-12

申请号：US15743614

申请日：2017-02-24

Applicant: Applied Materials, Inc.

Inventor： Matthias HEYMANNS ,  Stefan BANGERT ,  Oliver HEIMEL ,  Andreas SAUER ,  Sebastian Gunther ZANG

IPC: H01L51/00 ,  C23C14/04 ,  C23C14/56 ,  H01L51/56

Abstract: The present disclosure provides an apparatus (200) for vacuum processing of a substrate (10). The apparatus (200) includes a vacuum chamber, a first track arrangement (110) configured for transportation of a substrate carrier (120), a second track arrangement (130) configured for transportation of a mask carrier (140), and a holding arrangement configured for positioning the substrate carrier (120) and the mask carrier (140) with respect to each other. The first track arrangement (110) includes a first portion configured to support the substrate carrier (120) at a first end (12) of the substrate (10) and a second portion configured to support the substrate carrier (120) at a second end (14) of the substrate (10) opposite the first end (12) of the substrate (10). The second track arrangement (120) includes a further first portion configured to support the mask carrier (140) at a first end (22) of a mask (20) and a further second portion configured to support the mask carrier (140) at a second end (24) of the mask (20) opposite the first end (22) of the mask (20). A first distance (D) between the first portion and the second portion of the first track arrangement (110) and a second distance (D′) between the further first portion and the further second portion of the second track arrangement (130) are essentially the same.

公开(公告)号：US20180351164A1

公开(公告)日：2018-12-06

申请号：US15570988

申请日：2015-05-15

Applicant: Applied Materials, Inc.

Inventor： Anke HELLMICH ,  Thomas Werner ZILBAUER ,  Jose Manuel DIEGUEZ-CAMPO ,  Stefan KELLER ,  Georg JOST

IPC: H01M4/1395 ,  H01M4/04 ,  H01M4/38 ,  H01M4/40 ,  H01M10/052 ,  H01M6/40

CPC classification number: H01M4/1395 ,  H01M4/0423 ,  H01M4/0426 ,  H01M4/382 ,  H01M4/405 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0585

Abstract: The present disclosure provides a masking device for use in a lithium deposition process in the manufacturing of thin film batteries. The masking device includes a mask portion made of a metal or metal alloy, and one or more openings in the mask portion, wherein the one or more openings are configured to allow particles of a deposition material to pass through the mask portion, and wherein a size of each opening of the one or more openings, is at least 0.5 cm2.

公开(公告)号：US20170152968A1

公开(公告)日：2017-06-01

申请号：US15110714

申请日：2016-04-06

Applicant: Applied Materials, Inc.

Inventor： Govinda RAJ ,  Hanish KUMAR ,  Lin ZHANG ,  Stanley WU

IPC: F16K41/10 ,  H01J37/32 ,  F16L11/15 ,  H01L21/687

CPC classification number: F16K41/10 ,  C23C16/4404 ,  F16L11/15 ,  H01J37/32477 ,  H01J37/32495 ,  H01L21/68757 ,  H01L21/68792

Abstract: Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.

公开(公告)号：US20160244870A1

公开(公告)日：2016-08-25

申请号：US15024001

申请日：2013-09-24

Applicant: Frank SCHNAPPENBERGER ,  Anke HELLMICH ,  Thomas KOCH ,  Thomas DEPPISCH

Inventor： Frank SCHNAPPENBERGER ,  Anke HELLMICH ,  Thomas KOCH ,  Thomas DEPPISCH

IPC: C23C14/00 ,  C23C14/54

CPC classification number: C23C14/0042 ,  C23C14/544 ,  H01J37/32449 ,  H01J37/32981 ,  H01J37/3299

Abstract: A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.

Abstract translation: 提供了一种用于控制对处理室的气体供应的方法。 该方法包括：通过设置在处理室中的两个或更多个传感器中的每一个测量气体参数; 根据测量的气体参数确定组合气体参数; 以及基于所确定的组合气体参数来控制对所述处理室的气体供应。

公开(公告)号：US20250167190A1

公开(公告)日：2025-05-22

申请号：US19035670

申请日：2025-01-23

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Byung Sung Kwak ,  Mingwei Zhu ,  Hou T. Ng ,  Nag B. Patibandla ,  Christopher Dennis Bencher

IPC: H01L25/16 ,  H01L25/075 ,  H10H20/01 ,  H10H20/825 ,  H10H20/84 ,  H10H20/85 ,  H10H20/853 ,  H10H20/855 ,  H10H20/856

Abstract: A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation walls include a core of a first material and a coating covering at least a portion of the core extending above the light-emitting diodes. The coating is an opaque second material having transmittance less than 1% of light in the first wavelength range.

公开(公告)号：US20250166994A1

公开(公告)日：2025-05-22

申请号：US18601809

申请日：2024-03-11

Applicant: Applied Materials, Inc.

Inventor： Zhiyu HUANG ,  Tong LIU ,  Madhur Singh SACHAN ,  Sony VARGHESE ,  Keiichi NAKAZAWA

IPC: H01L21/033 ,  G03F7/00 ,  H01L21/311 ,  H01L21/768

Abstract: A method of forming a pattern in a device structure formed on a substrate includes forming one or more patterning layers over a surface of a device structure formed on the substrate, forming patterning features in the one or more patterning layers, depositing a film layer over a surface of the one or more patterning layers and the patterning features, and etching at least a portion of a first device feature of a plurality of device features that is exposed within each of film layer openings formed within the patterning features.

公开(公告)号：US20250157856A1

公开(公告)日：2025-05-15

申请号：US18912536

申请日：2024-10-10

Applicant: Applied Materials, Inc.

Inventor： Jiajie CEN ,  Zheng JU ,  Feng Q. LIU ,  Ying-Bing JIANG ,  Shiyu YUE ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/14 ,  C23C16/50

Abstract: Embodiments of the invention provide a method of forming a molybdenum (Mo) capping layer that is used to prevent copper diffusion in interconnect boundary regions of a formed semiconductor device. The molybdenum capping will improve copper boundary region properties to promote adhesion, decrease diffusion and copper agglomeration. Embodiments provide that a molybdenum capping layer may be selectively deposited on a surface of a copper interconnect structures formed in a dielectric layer formed on a substrate.

公开(公告)号：US20250157802A1

公开(公告)日：2025-05-15

申请号：US19023108

申请日：2025-01-15

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Lei Lian ,  Leonard Michael Tedeschi

IPC: H01J37/32 ,  H01L21/66

Abstract: A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement of the one or more optical measurements, a film thickness of the film; determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements; and determine a process parameter value of at least one process parameter for a previously performed process that was performed on the substrate based on the etch rate.