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74 条记录 (耗时 0.032 秒)

    Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
    3.
    发明申请
    Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures 审中-公开
    用于三维结构的高掺杂含Si材料的选择性和保形外延的方法

    公开(公告)号：US20140120678A1

    公开(公告)日：2014-05-01

    申请号：US14063118

    申请日：2013-10-25

    申请人： Manabu Shinriki ,  Paul Brabant ,  Keith Chung, JR.

    发明人： Manabu Shinriki ,  Paul Brabant ,  Keith Chung, JR.

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66795 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

    摘要： The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source/drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance.

    摘要翻译： 本发明解决了FinFET制造中的关键挑战，即薄的均匀散热片的制造，并且还减少了源/漏串联电阻。 更具体地说，本申请涉及利用四硅烷使磷酸盐，砷和硼作为掺杂剂进行高掺杂的保形沉积的FinFET制造技术，从而产生具有均匀厚度（均匀性的器件）以及平滑的垂直侧壁的薄翅片，同时减少 寄生串联电阻。

    LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON AND GERMANIUM EMPLOYING A HIGH ORDER SILANE PRECURSOR
    4.
    发明申请
    LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON AND GERMANIUM EMPLOYING A HIGH ORDER SILANE PRECURSOR 有权
    包含硅和锗的半导体合金的低温外延使用高阶硅烷前体

    公开(公告)号：US20140045324A1

    公开(公告)日：2014-02-13

    申请号：US14057064

    申请日：2013-10-18

    申请人： MATHESON TRI-GAS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02532 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02636

    摘要： A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material. The combination of the high order silane and the germanium precursor gas provides a high deposition rate in the Frank-van der Merwe growth mode for deposition of a single crystalline semiconductor alloy material.

    摘要翻译： 使用与锗前体气体组合的具有式SinH2n + 2的其中n为大于3的整数的高级硅烷在单一晶体表面上沉积至少包含硅和锗的外延半导体合金材料。 锗前体气体有效地降低了高级硅烷的气相反应，从而提高了沉积的外延半导体合金材料的厚度均匀性。 高阶硅烷和锗前体气体的组合在用于沉积单晶半导体合金材料的Frank-van der Merwe生长模式中提供高沉积速率。

    Leak Characterization Apparatuses and Methods for Fluid Storage Containers
    8.
    发明申请
    Leak Characterization Apparatuses and Methods for Fluid Storage Containers 审中-公开
    流体储存容器的泄漏特性设备和方法

    公开(公告)号：US20090025455A1

    公开(公告)日：2009-01-29

    申请号：US12245469

    申请日：2008-10-03

    申请人： Stuart Muller ,  Robert Torres, JR.

    发明人： Stuart Muller ,  Robert Torres, JR.

    IPC分类号： G01M3/04

    CPC分类号： G01M3/229

    摘要： According to the invention, an apparatus to characterize leaks in a fluid storage container is disclosed. The apparatus may include a valve coupler, a gas manifold and a processor. The valve coupler may couple the apparatus with a closed valve on the fluid storage container. The gas manifold may be coupled with the valve coupler and may include a first branch connected with a gas monitoring device. The gas monitoring device may scan for a plurality of gases that may be emitted by the closed valve of the fluid storage container. The processor may be operable to receive gas monitoring device data representing masses for one or more of the plurality of gases detected by the monitor.

    摘要翻译： 根据本发明，公开了一种用于表征流体储存容器中泄漏的装置。 该装置可以包括阀联接器，气体歧管和处理器。 阀联接器可将装置与液体储存容器上的封闭阀联接。 气体歧管可以与阀联接器联接，并且可以包括与气体监测装置连接的第一分支。 气体监测装置可以扫描可由流体储存容器的封闭阀发射的多种气体。 处理器可以可操作地接收表示由监视器检测到的多个气体中的一个或多个气体的质量的气体监测装置数据。

    TORQUE LIMITING HAND WHEEL
    9.
    发明申请
    TORQUE LIMITING HAND WHEEL 有权
    扭矩限制手轮

    公开(公告)号：US20080061256A1

    公开(公告)日：2008-03-13

    申请号：US11470751

    申请日：2006-09-07

    申请人： Jeff Lewis ,  Stuart Muller

    发明人： Jeff Lewis ,  Stuart Muller

    IPC分类号： F16K31/44

    CPC分类号： F16K31/60 ,  F16D7/048 ,  F16D43/2028 ,  G05G1/08

    摘要： According to the invention, a system for applying torque to a valve element that stops fluid flow through the valve is disclosed. The system may include an input element, a drive element, and a torque transferring mechanism. The input element may be configured to receive a torque. The drive element may be configured to apply substantially none of the torque, or at least a portion of the torque, to the valve element. The torque transferring mechanism may be configured to receive the torque from the input element, and transfer substantially none of the torque, or at least a portion of the torque, to the drive element based at least in part on a resistance of the valve element to turning.

    摘要翻译： 根据本发明，公开了一种用于向阻止流体流过阀门的阀元件施加扭矩的系统。 该系统可以包括输入元件，驱动元件和扭矩传递机构。 输入元件可被配置为接收转矩。 驱动元件可以构造成基本上施加扭矩或至少一部分扭矩的阀元件。 转矩传递机构可以被配置为从输入元件接收转矩，并且基本上至少部分地基于阀元件的电阻至少将扭矩或扭矩的至少一部分转移到驱动元件 转动

    HIGH FLOW SURFACE MOUNT COMPONENTS
    10.
    发明申请
    HIGH FLOW SURFACE MOUNT COMPONENTS 审中-公开
    高流量表面安装组件

    公开(公告)号：US20070289652A1

    公开(公告)日：2007-12-20

    申请号：US11424815

    申请日：2006-06-16

    申请人： William J. Curran ,  Dane C. Scott

    发明人： William J. Curran ,  Dane C. Scott

    IPC分类号： F17D1/00

    CPC分类号： F16K27/003 ,  F16L47/03 ,  Y10T137/87885

    摘要： A fluid handling unit is disclosed and includes a body, a plurality of fluid passage ports formed in the body, and a plurality of orifices formed on surfaces of the body to provide fluid access to the ports from outside the unit. At least two of the orifices may have different cross-sectional areas. A modular fluid handling system is also disclosed and includes a plurality of fluid handling units, wherein adjacent fluid handling units are coupled together to form the fluid handling system. The fluid handling system may deliver fluid from at least one fluid source to fluid utilizing equipment. A plurality of fluid passages may be formed by the fluid handling units, and the diameter of one fluid passage may be greater than the diameter of another fluid passage. At least one control component may be coupled with at least one fluid handling unit.

    摘要翻译： 公开了一种流体处理单元，其包括主体，形成在主体中的多个流体通道端口以及形成在主体表面上的多个孔口，以从单元外部提供流体进入端口。 至少两个孔可以具有不同的横截面积。 还公开了一种模块化流体处理系统，并且包括多个流体处理单元，其中相邻的流体处理单元联接在一起以形成流体处理系统。 流体处理系统可以将流体从至少一个流体源输送到利用流体的设备。 多个流体通道可以由流体处理单元形成，并且一个流体通道的直径可以大于另一个流体通道的直径。 至少一个控制部件可以与至少一个流体处理单元联接。