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公开(公告)号：US08975117B2
公开(公告)日：2015-03-10
申请号：US13369059
申请日：2012-02-08
申请人： Ralf Otremba , Fong Lim , Abdul Rahman Mohamed , Chooi Mei Chong , Ida Fischbach , Xaver Schloegel , Juergen Schredl , Josef Hoeglauer
发明人： Ralf Otremba , Fong Lim , Abdul Rahman Mohamed , Chooi Mei Chong , Ida Fischbach , Xaver Schloegel , Juergen Schredl , Josef Hoeglauer
CPC分类号： H01L23/49562 , H01L23/49524 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L24/95 , H01L2224/04026 , H01L2224/05553 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0603 , H01L2224/2732 , H01L2224/2745 , H01L2224/27462 , H01L2224/29109 , H01L2224/29111 , H01L2224/32058 , H01L2224/32225 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/33181 , H01L2224/3512 , H01L2224/352 , H01L2224/37099 , H01L2224/37111 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/37164 , H01L2224/37169 , H01L2224/37572 , H01L2224/376 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/37655 , H01L2224/37664 , H01L2224/37669 , H01L2224/40095 , H01L2224/40101 , H01L2224/40175 , H01L2224/40245 , H01L2224/40247 , H01L2224/40491 , H01L2224/73253 , H01L2224/73263 , H01L2224/77272 , H01L2224/83191 , H01L2224/83192 , H01L2224/8321 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83464 , H01L2224/83469 , H01L2224/83801 , H01L2224/83825 , H01L2224/84439 , H01L2224/84444 , H01L2224/84447 , H01L2224/84455 , H01L2224/84464 , H01L2224/84469 , H01L2224/84801 , H01L2224/84825 , H01L2224/9221 , H01L2224/92246 , H01L2224/95 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01047 , H01L2924/01079 , H01L2224/83 , H01L2224/84 , H01L2924/00012 , H01L2224/37599
摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.
摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合。
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公开(公告)号：US20130200532A1
公开(公告)日：2013-08-08
申请号：US13369059
申请日：2012-02-08
申请人： Ralf Otremba , Fong Lim , Abdul Rahman Mohamed , Chooi Mei Chong , Ida Fischbach , Xaver Schloegel , Juergen Schredl , Josef Hoeglauer
发明人： Ralf Otremba , Fong Lim , Abdul Rahman Mohamed , Chooi Mei Chong , Ida Fischbach , Xaver Schloegel , Juergen Schredl , Josef Hoeglauer
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L23/49562 , H01L23/49524 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L24/95 , H01L2224/04026 , H01L2224/05553 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/0603 , H01L2224/2732 , H01L2224/2745 , H01L2224/27462 , H01L2224/29109 , H01L2224/29111 , H01L2224/32058 , H01L2224/32225 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/33181 , H01L2224/3512 , H01L2224/352 , H01L2224/37099 , H01L2224/37111 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/37164 , H01L2224/37169 , H01L2224/37572 , H01L2224/376 , H01L2224/37639 , H01L2224/37644 , H01L2224/37647 , H01L2224/37655 , H01L2224/37664 , H01L2224/37669 , H01L2224/40095 , H01L2224/40101 , H01L2224/40175 , H01L2224/40245 , H01L2224/40247 , H01L2224/40491 , H01L2224/73253 , H01L2224/73263 , H01L2224/77272 , H01L2224/83191 , H01L2224/83192 , H01L2224/8321 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83464 , H01L2224/83469 , H01L2224/83801 , H01L2224/83825 , H01L2224/84439 , H01L2224/84444 , H01L2224/84447 , H01L2224/84455 , H01L2224/84464 , H01L2224/84469 , H01L2224/84801 , H01L2224/84825 , H01L2224/9221 , H01L2224/92246 , H01L2224/95 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01047 , H01L2924/01079 , H01L2224/83 , H01L2224/84 , H01L2924/00012 , H01L2224/37599
摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.
摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合。
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