公开(公告)号：US20170213783A1

公开(公告)日：2017-07-27

申请号：US15414815

申请日：2017-01-25

申请人： Infineon Technologies AG

发明人： Andreas Meiser ,  Matthias Grewe ,  Stefan Macheiner

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L23/49575 ,  H01L23/49593 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/376 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/1304 ,  H01L2224/37599

摘要： A semiconductor package is disclosed. The semiconductor package includes an electrically conducting carrier having a mounting surface, a first level first semiconductor power device having a first load electrode mounted over the mounting surface of the electrically conducting carrier and having a second load electrode opposite the first electrode. The package further includes a first level second semiconductor power device. A first connection element has a first surface connected to the second load electrode of the first level first semiconductor power device. A second connection element has a first surface connected to the second load electrode of the first level second semiconductor power device. The package includes a second level first semiconductor power device and a second level second semiconductor power device.

公开(公告)号：US20150348881A1

公开(公告)日：2015-12-03

申请号：US14290153

申请日：2014-05-29

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Dan Okamoto

IPC分类号： H01L23/495 ,  B23K35/02 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48

CPC分类号： B23K35/025 ,  H01L21/4825 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/2732 ,  H01L2224/2741 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/35821 ,  H01L2224/35823 ,  H01L2224/37147 ,  H01L2224/3756 ,  H01L2224/376 ,  H01L2224/40105 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of making a QFD package including providing a clip and coating at least a first end portion of the clip with solder paste.

摘要翻译： 一种制造QFD封装的方法，包括提供夹子并用焊膏涂覆夹子的至少第一端部分。

公开(公告)号：US20130200532A1

公开(公告)日：2013-08-08

申请号：US13369059

申请日：2012-02-08

申请人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

发明人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/95 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32058 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/3512 ,  H01L2224/352 ,  H01L2224/37099 ,  H01L2224/37111 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37164 ,  H01L2224/37169 ,  H01L2224/37572 ,  H01L2224/376 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/37669 ,  H01L2224/40095 ,  H01L2224/40101 ,  H01L2224/40175 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40491 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/84464 ,  H01L2224/84469 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/9221 ,  H01L2224/92246 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37599

摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合​​。

公开(公告)号：US07879455B2

公开(公告)日：2011-02-01

申请号：US11633419

申请日：2006-12-05

申请人： Ryoichi Kajiwara ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Kazutoshi Itou

IPC分类号： H01L23/48 ,  B23K35/26 ,  C22C13/02

CPC分类号： C22C13/02 ,  B23K35/02 ,  B23K35/025 ,  B23K35/22 ,  B23K35/262 ,  B23K35/3006 ,  B23K35/302 ,  H01L23/49513 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/376 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81097 ,  H01L2224/81805 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83097 ,  H01L2224/83203 ,  H01L2224/83211 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/20108 ,  H01L2924/30105 ,  H01L2924/351 ,  Y10T428/12528 ,  Y10T428/12708 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %≦Sb/(Sn+Sb)≦48 wt %, 5 wt %≦Ag

摘要翻译： 本发明旨在提供一种使用高温无铅焊料的功率半导体器件，具有280℃以上的耐热性的高温无铅焊料以及400℃下的结合性 或更低，焊料的可供应性和润湿性优异，以及高温存储的可靠性和温度循环的可靠性。 在根据本发明的功率半导体器件中，半导体元件和金属电极构件通过包含Sn，Sb，Ag和Cu的高温焊料作为主要构成元素彼此接合，而其余的不可避免的 杂质元素，其中高温焊料材料包含42重量％＆lt; Sb;（Sn + Sb）＆nlE; 48重量％，5重量％＆lt; NE; Ag <20重量％，3重量％＆lt; 和Ag + Cu＆nlE; 25wt％。

公开(公告)号：US08975117B2

公开(公告)日：2015-03-10

申请号：US13369059

申请日：2012-02-08

申请人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

发明人： Ralf Otremba ,  Fong Lim ,  Abdul Rahman Mohamed ,  Chooi Mei Chong ,  Ida Fischbach ,  Xaver Schloegel ,  Juergen Schredl ,  Josef Hoeglauer

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/95 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32058 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/3512 ,  H01L2224/352 ,  H01L2224/37099 ,  H01L2224/37111 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37164 ,  H01L2224/37169 ,  H01L2224/37572 ,  H01L2224/376 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/37655 ,  H01L2224/37664 ,  H01L2224/37669 ,  H01L2224/40095 ,  H01L2224/40101 ,  H01L2224/40175 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40491 ,  H01L2224/73253 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/84464 ,  H01L2224/84469 ,  H01L2224/84801 ,  H01L2224/84825 ,  H01L2224/9221 ,  H01L2224/92246 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00012 ,  H01L2224/37599

摘要： A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

摘要翻译： 一种方法包括提供具有第一主表面和第二主表面的半导体芯片。 将半导体芯片放置在载体上，其中半导体芯片的第一主表面面向载体。 第一层焊料材料设置在第一主表面和载体之间。 包括第一接触区域的接触夹子被放置在半导体芯片上，其中第一接触区域面对半导体芯片的第二主表面。 第二层焊料材料设置在第一接触区域和第二主表面之间。 此后，将热量施加到第一和第二层焊料材料，以在载体，半导体芯片和接触夹之间形成扩散焊料接合​​。

公开(公告)号：US20130154073A1

公开(公告)日：2013-06-20

申请号：US13327032

申请日：2011-12-15

申请人： Harold L. Massie ,  Phillip Celaya ,  David F. Moeller ,  Mark Randol

发明人： Harold L. Massie ,  Phillip Celaya ,  David F. Moeller ,  Mark Randol

IPC分类号： H01L23/495 ,  H01L21/50 ,  H01L21/28

CPC分类号： H01L23/49524 ,  H01L23/3107 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/37147 ,  H01L2224/376 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/84

摘要： In one embodiment, a leadframe for a semiconductor package includes a source connection area for one transistor and a drain connection point for a second transistor, and a common connection for using a connection clip to couple a drain of the first transistor to a source of the second transistor and to the common connection.

摘要翻译： 在一个实施例中，用于半导体封装的引线框架包括用于一个晶体管的源极连接区域和用于第二晶体管的漏极连接点，以及用于使用连接夹将第一晶体管的漏极耦合到第二晶体管的源极的公共连接 第二晶体管和公共连接。

公开(公告)号：US20070125449A1

公开(公告)日：2007-06-07

申请号：US11633419

申请日：2006-12-05

申请人： Ryoichi Kajiwara ,  Kazutoshi Itou

发明人： Ryoichi Kajiwara ,  Kazutoshi Itou

IPC分类号： C22C13/02

CPC分类号： C22C13/02 ,  B23K35/02 ,  B23K35/025 ,  B23K35/22 ,  B23K35/262 ,  B23K35/3006 ,  B23K35/302 ,  H01L23/49513 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/376 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2224/81065 ,  H01L2224/81075 ,  H01L2224/81097 ,  H01L2224/81805 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83097 ,  H01L2224/83203 ,  H01L2224/83211 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/20108 ,  H01L2924/30105 ,  H01L2924/351 ,  Y10T428/12528 ,  Y10T428/12708 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %≦Sb/(Sn+Sb)≦48 wt %, 5 wt %≦Ag

摘要翻译： 本发明旨在提供一种使用高温无铅焊料的功率半导体器件，具有280℃以上的耐热性的高温无铅焊料以及400℃下的结合性 或更低，焊料的可供应性和润湿性优异，以及高温存储的可靠性和温度循环的可靠性。 在根据本发明的功率半导体器件中，半导体元件和金属电极构件通过包含Sn，Sb，Ag和Cu的高温焊料作为主要构成元素彼此接合，其余的不可避免的 杂质元素，其中高温焊料材料包含42重量％<= Sb /（Sn + Sb）<= 48重量％，5重量％<= Ag <20重量％，3重量％<= Cu <10重量％ 和Ag + Cu <= 25wt％。

公开(公告)号：US09837386B2

公开(公告)日：2017-12-05

申请号：US14993971

申请日：2016-01-12

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Xiaotian Zhang ,  Shekar Mallikarjunaswamy ,  Zhiqiang Niu ,  Cheow Khoon Oh ,  Yueh-Se Ho

IPC分类号： H01L25/07 ,  H01L23/49 ,  H02M3/158 ,  H01L29/78 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L25/072 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L25/16 ,  H01L29/7827 ,  H01L2224/16225 ,  H01L2224/376 ,  H01L2224/4005 ,  H01L2224/40137 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/14252 ,  H02M3/158 ,  H01L2224/37599

摘要： A power conversion device including a low-side MOSFET, a high-side MOSFET and an integrated control IC chip is disclosed. The power conversion device further includes a substrate comprising a first mounting area having a first group of welding discs and a second mounting area having a second group of welding discs; a first chip flipped and attached to the first mounting area; a second chip flipped and attached to the second mounting area; a metal clip; and a molding body covering a front surface of the substrate, the first chip, the second chip and the metal clip. Metal pads on a front side of the first chip is attached to the first group of welding discs. Metal pads on a front side of the second chip is attached to the second group of welding discs. The metal clip connects a connection pad to a back metal layer of the first chip.

公开(公告)号：US09460938B2

公开(公告)日：2016-10-04

申请号：US14254805

申请日：2014-04-16

申请人： Renesas Electronics Corporation

发明人： Hiroyasu Miyamoto

IPC分类号： H01L23/12 ,  H01L21/56 ,  H01L23/544 ,  H01L23/10 ,  H01L25/065 ,  H01L25/18 ,  H01L23/04 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367 ,  H01L23/50 ,  H05K1/02

CPC分类号： H01L21/563 ,  H01L23/04 ,  H01L23/10 ,  H01L23/367 ,  H01L23/49816 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/544 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L25/0657 ,  H01L25/18 ,  H01L2223/5442 ,  H01L2223/54486 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3701 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/376 ,  H01L2224/40225 ,  H01L2224/40499 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73263 ,  H01L2224/83132 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/84132 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16196 ,  H01L2924/16251 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/351 ,  H01L2924/3511 ,  H05K1/0203 ,  H05K2201/066 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/1056 ,  H05K2201/10674 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07811

摘要： The long sides of a rectangular control chip and the long sides of a rectangular memory chip are arranged parallel with first sides of the upper surface of a wiring substrate in a BGA. A lid includes a pair of first brims and a pair of second brims, the widths of the second brims are formed wider than those of the first brims, and a mounting area for mounting chip parts and a junction base area for joining the lid are secured outside the short sides of the control chip mounted on the upper surface of the wiring substrate and outside the short sides of the memory chip mounted on the upper surface of the wiring substrate, which enables the wide-width second brims of the lid to be disposed on the junction base area. Hence, the mounting area of the BGA can be reduced.

摘要翻译： 矩形控制芯片的长边和矩形存储芯片的长边与布线基板的上表面的第一侧平行布置在BGA中。 盖子包括一对第一边缘和一对第二边缘，第二边缘的宽度形成得比第一边缘的宽度宽，并且用于安装芯片部分的安装区域和用于接合盖子的接合基座区域被固定 在安装在布线基板的上表面上的控制芯片的短边外部以及安装在布线基板的上表面上的存储芯片的短边外侧，能够布置盖的宽幅第二边缘 在交汇处基地区。 因此，可以减小BGA的安装面积。

公开(公告)号：US08581416B2

公开(公告)日：2013-11-12

申请号：US13327032

申请日：2011-12-15

申请人： Harold L. Massie ,  Phillip Celaya ,  David F. Moeller ,  Mark Randol

发明人： Harold L. Massie ,  Phillip Celaya ,  David F. Moeller ,  Mark Randol

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L21/00

CPC分类号： H01L23/49524 ,  H01L23/3107 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/37147 ,  H01L2224/376 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/84

摘要： In one embodiment, a leadframe for a semiconductor package includes a source connection area for one transistor and a drain connection point for a second transistor, and a common connection for using a connection clip to couple a drain of the first transistor to a source of the second transistor and to the common connection.

摘要翻译： 在一个实施例中，用于半导体封装的引线框架包括用于一个晶体管的源极连接区域和用于第二晶体管的漏极连接点，以及用于使用连接夹将第一晶体管的漏极耦合到第二晶体管的源极的公共连接 第二晶体管和公共连接。