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11 条记录 (耗时 0.035 秒)

    High intensity single-mode VCSELs
    1.
    发明授权
    High intensity single-mode VCSELs 失效
    高强度单模VCSEL

    公开(公告)号：US5838715A

    公开(公告)日：1998-11-17

    申请号：US667259

    申请日：1996-06-20

    申请人： Scott W. Corzine ,  Dubravko I. Babic ,  Richard P. Schneider, Jr. ,  Michael R. Tan ,  Shih-Yuan Wang

    发明人： Scott W. Corzine ,  Dubravko I. Babic ,  Richard P. Schneider, Jr. ,  Michael R. Tan ,  Shih-Yuan Wang

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S3/08 ,  H01S3/19

    CPC分类号： H01S5/18388 ,  H01S2301/166 ,  H01S5/1089 ,  H01S5/18308 ,  H01S5/18327 ,  H01S5/18372 ,  H01S5/2063

    摘要： A VCSEL 101 comprising an optical cavity having an optical loss and a loss-determining element 117 coupled to the optical cavity. The loss-determining element 117 progressively increases the optical loss of the optical cavity with increasing lateral distance from the optical axis 105. The optical cavity includes a first mirror region 111, a second mirror region 107, a plane light-generating region 125 sandwiched between the first mirror region 111 and the second mirror region 107, perpendicular to the optical axis 105, and an element 113 that defines the lateral extent of the optical cavity in the plane of the light-generating region 125. The first mirror region 111 and the second mirror region 107 are both conductive and have opposite conductivity modes.

    摘要翻译： 包括具有光学损耗的光学腔和耦合到光腔的损耗确定元件117的VCSEL 101。 损耗确定元件117随着从光轴105的横向距离的增加而逐渐增加光学腔的光学损耗。光学腔包括第一镜面区域111，第二镜面区域107，夹在两者之间的平面光产生区域125 垂直于光轴105的第一镜面区域111和第二镜面区域107以及限定光产生区域125的平面中的光腔的横向范围的元件113.第一镜面区域111和 第二反射镜区域107都是导电的并具有相反的导电模式。

    Epitaxial material grown laterally within a trench and method for producing same
    2.
    发明授权
    Epitaxial material grown laterally within a trench and method for producing same 失效
    在沟槽内横向生长的外延材料及其制造方法

    公开(公告)号：US06500257B1

    公开(公告)日：2002-12-31

    申请号：US09062028

    申请日：1998-04-17

    申请人： Shih-Yuan Wang ,  Changhua Chen ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Richard P. Schneider, Jr.

    发明人： Shih-Yuan Wang ,  Changhua Chen ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Richard P. Schneider, Jr.

    IPC分类号： C30B2300

    CPC分类号： H01L21/02647 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642

    摘要： An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

    摘要翻译： 在沟槽中横向生长的外延材料允许制造基本上低的位错密度的基于沟槽的半导体材料。 从沟槽的侧壁开始生长使晶格生长模板中存在的位错的密度最小化，这使再生材料中的位错密度最小化。 此外，通过允许再生长填充和溢出沟槽，低位错密度材料可以覆盖生长低位错密度材料的基底的整个表面。 此外，随着沟槽生长过程的连续迭代，可以获得更高质量的材料。 然后可以从低位错密度材料制造需要稳定的高质量外延材料的器件。

    P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
    3.
    发明授权
    P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction 有权
    利用反向偏置隧道结的GaN基半导体的P接触

    公开(公告)号：US06526082B1

    公开(公告)日：2003-02-25

    申请号：US09586406

    申请日：2000-06-02

    申请人： Scott W. Corzine ,  Richard P. Schneider, Jr. ,  Ghulam Hasnain

    发明人： Scott W. Corzine ,  Richard P. Schneider, Jr. ,  Ghulam Hasnain

    IPC分类号： H01S500

    CPC分类号： H01S5/10 ,  H01S5/32341 ,  H01S5/4037 ,  H01S2301/14

    摘要： A light-generating device such as a laser or LED. A light-generating device according to the present invention includes a first n-electrode layer in contact with a first n-contact layer, the first n-contact layer including an n-doped semiconductor. Light is generated by the recombination of holes and electrons in an n-p active layer. The n-p active layer includes a first p-doped layer in contact with a first n-doped layer, the first n-doped layer being connected electrically with the first n-contact layer. A p-n reverse-biased tunnel diode constructed from a second p-doped layer in contact with a second n-doped layer is connected electrically such that the second p-doped layer is connected electrically with the first p-layer. A second n-contact layer constructed from an n-doped semiconductor material is connected electrically to the second n-doped layer. A second n-electrode layer is placed in contact with the second n-contact layer. The various layers of the invention can be constructed from GaN semiconductors. The p-n reverse-biased tunnel diode includes an n-depletion region in the second n-doped layer and a p-depletion region in the second p-doped layer, the n-depletion region and the p-depletion region in contact with one another. The conductivity of the reverse-bias tunnel diode may be increased by doping the n-depletion region and p-depletion region. The conductivity of the reverse-bias tunnel diode can also be increased by including a compressively strained InGaN layer in the n-depletion region.

    摘要翻译： 诸如激光或LED的发光装置。 根据本发明的发光装置包括与第一n接触层接触的第一n电极层，第一n接触层包括n掺杂半导体。 光通过n-p活性层中空穴和电子的重组而产生。 n-p有源层包括与第一n掺杂层接触的第一p掺杂层，第一n掺杂层与第一n接触层电连接。 由与第二n掺杂层接触的第二p掺杂层构成的p-n反向偏置隧道二极电连接使得第二p掺杂层与第一p型掺杂层电连接。 由n掺杂半导体材料构成的第二n接触层与第二n掺杂层电连接。 第二n电极层被放置成与第二n接触层接触。 本发明的各个层可以由GaN半导体构成。 pn反向偏置隧道二极管包括第二n掺杂层中的n耗尽区和第二p掺杂层中的p耗尽区，n耗尽区和p耗尽区彼此接触 。 可以通过掺杂n耗尽区和p耗尽区来增加反向偏置隧道二极管的导电性。 反偏压隧道二极管的导电性也可以通过在n耗尽区域中包括压缩应变的InGaN层来增加。

    Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
    4.
    发明授权
    Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets 失效
    近平面自然氧化物VCSEL器件和使用会聚氧化物小环的阵列

    公开(公告)号：US5896408A

    公开(公告)日：1999-04-20

    申请号：US911708

    申请日：1997-08-15

    申请人： Scott W. Corzine ,  Richard P. Schneider, Jr. ,  Michael R. T. Tan

    发明人： Scott W. Corzine ,  Richard P. Schneider, Jr. ,  Michael R. T. Tan

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/42 ,  H01S3/19 ,  H01L21/20 ,  H01S3/08

    CPC分类号： H01S5/18313 ,  H01S5/2086 ,  H01S5/423

    摘要： A VCSEL with a near planar top surface on which the top electrode is deposited. A VCSEL according to the present invention includes a top electrode, a top mirror having a top surface, a light generation region, and a bottom mirror for reflecting light toward the top mirror. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes are etched down from the top surface of the VCSEL to the layer containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.

    摘要翻译： 具有近平面顶表面的VCSEL，其上沉积有顶电极。 根据本发明的VCSEL包括顶电极，具有顶表面的上反射镜，光产生区域和用于向上反射镜反射光的底镜。 至少一个反射镜包括具有不同折射率的多个平面导电层。 此外，至少一层包括可氧化材料。 为了将该层暴露于氧化剂（从而将材料转化为电绝缘体），从VCSEL的顶表面向包含可氧化材料的层蚀刻三个或更多个孔。 然后将氧化剂引入这些孔的顶部。 该层的部分氧化将该层转变为具有由电绝缘区域包围的导电区域的层，该导电区域位于顶部电极之下。

    Visible-wavelength semiconductor lasers and arrays
    5.
    发明授权
    Visible-wavelength semiconductor lasers and arrays 失效
    可见波长半导体激光器和阵列

    公开(公告)号：US5557627A

    公开(公告)日：1996-09-17

    申请号：US444462

    申请日：1995-05-19

    申请人： Richard P. Schneider, Jr. ,  Mary H. Crawford

    发明人： Richard P. Schneider, Jr. ,  Mary H. Crawford

    IPC分类号： H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/305 ,  H01S5/34326 ,  H01S5/18358 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3211

    摘要： A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

    摘要翻译： 可见半导体激光器。 可见半导体激光器包括由每一侧上的一个或多个AlGaAs层包围的InAlGaP有源区，其中碳作为唯一的p型掺杂剂。 作为垂直腔表面发射激光器（VCSEL）和边缘发射激光器（EEL）提供本发明的实施例。 可以在InAlGaP有源区和AlGaAS DBR镜或限制层之间提供由基本上不含铟的半导体合金如AlAsP，AlGaAsP等构成的一个或多个过渡层，以通过减少任何带来改善载流子注入和器件效率 抵消。 根据本发明制造的具有单波长厚（1λ）光腔的可见VCSEL器件可以工作在连续波（cw），激光输出功率高达8 mW，峰值功率转换效率高达11％。

    Visible light emitting vertical cavity surface emitting lasers
    7.
    发明授权
    Visible light emitting vertical cavity surface emitting lasers 失效
    可见光发射垂直腔表面发射激光器

    公开(公告)号：US5428634A

    公开(公告)日：1995-06-27

    申请号：US972820

    申请日：1992-11-05

    申请人： Robert P. Bryan ,  Gregory R. Olbright ,  James A. Lott ,  Richard P. Schneider, Jr.

    发明人： Robert P. Bryan ,  Gregory R. Olbright ,  James A. Lott ,  Richard P. Schneider, Jr.

    IPC分类号： H01S5/183 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S5/34326

    摘要： A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

    摘要翻译： 发射可见光辐射的垂直腔表面发射激光器建立在衬底上，然后具有反射镜，第一反射镜位于衬底顶部; 这两套反射镜是影响电阻率或半导体的电介质或其他材料的分布布拉格反射器，使得反射镜内的结构包括多个组，每组具有λ/ 2n的厚度，其中n是 各组折射; 与在光学活性体积或量子阱层的任一侧上的间隔物相邻的每个反射镜; 并且间隔物和光学活性层来自以下材料体系之一：Inz（Al y Ga 1-y）1-zP，InAlGaAs，AlGaAs，InGaAs或AlGaP / GaP，其中长度等于mλ的光学活性区 / 2neff其中m是整数，neff是激光腔的有效折射率，并且间隔层和一个反射镜对波长为λ/ n的辐射是透射的，通常在辐射的绿色至红色部分内 可见光谱。

    Reduction of threading dislocations by amorphization and recrystallization
    8.
    发明授权
    Reduction of threading dislocations by amorphization and recrystallization 失效
    通过非晶化和重结晶减少穿透位错

    公开(公告)号：US5927995A

    公开(公告)日：1999-07-27

    申请号：US833813

    申请日：1997-04-09

    申请人： Yong Chen ,  Richard P. Schneider, Jr. ,  Shih-Yun Wang

    发明人： Yong Chen ,  Richard P. Schneider, Jr. ,  Shih-Yun Wang

    IPC分类号： H01L21/20 ,  H01L21/265

    CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02664 ,  H01L21/02667

    摘要： A method for providing an epitaxial layer of a first material over a substrate comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.

    摘要翻译： 一种用于在衬底上提供第一材料的外延层的方法，包括具有不同于第一材料的晶格常数的第二材料。 在本发明的方法中，第一材料的第一层在衬底上生长。 处理第一层的一部分以使该部分成为无定形的。 然后将非晶部分在高于非晶部分的再结晶点的温度下退火，但低于第一层的结晶部分的熔点，从而使第一层的非晶部分重结晶。 第一层可以通过离子注入形成非晶态。 该方法可用于在具有比通过常规沉积技术产生的GaN层更少的位错的蓝宝石上生成GaN层。