公开(公告)号：US06187392B1

公开(公告)日：2001-02-13

申请号：US09491967

申请日：2000-01-27

申请人： Eugene P. Marsh

发明人： Eugene P. Marsh

IPC分类号： C23C1648

CPC分类号： C23C16/4481 ,  C23C16/4485

摘要： Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 106 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.

摘要翻译： 通过以至少约106K /秒的加热速率增加所选择的靶区域的温度，相对冷的化学气相沉积前体颗粒从目标物解吸，使得热能导致至少一种CVD前体颗粒从 靶，使得前体颗粒和相邻颗粒之间的中间键以比前体的内部键更高的速率加热，或使得大部分热能不转移到CVD前体颗粒的内部模式。

公开(公告)号：US06203865B1

公开(公告)日：2001-03-20

申请号：US09357621

申请日：1999-07-20

申请人： Andrzej R. Badzian ,  Rustum N. Roy ,  Pravin Mistry ,  Manuel C. Turchan

发明人： Andrzej R. Badzian ,  Rustum N. Roy ,  Pravin Mistry ,  Manuel C. Turchan

IPC分类号： C23C1648

CPC分类号： C23C16/27 ,  C23C16/483

摘要： A method for producing well-crystallized adherent diamond layers on WC—Co substrates. An array of focused laser beams is scanned across the WC—Co sample. Useful lasers include the excimer, YAG:Nd, and carbon dioxide types. The process is conducted in open air with carbon dioxide and nitrogen gases delivered for shrouding the substrate. A luminous plasma is found a few mm above the WC—Co insert. The duration of the deposition process in a typical case is approximately 40 s. This typically gives 20-40 &mgr;m thick coatings. The vertical growth rate is about 1 &mgr;m/s.

摘要翻译： 一种用于在WC-Co基底上生产良好结晶的粘附金刚石层的方法。 在WC-Co样品上扫描聚焦激光束阵列。 有用的激光器包括准分子，YAG：Nd和二氧化碳类型。 该过程在露天进行，二氧化碳和氮气输送用于覆盖基材。 发现等离子体在WC-Co插入物上方几毫米。 在典型情况下，沉积过程的持续时间约为40秒。 这通常会给出20-40毫米厚的涂层。 垂直生长速度约为1mum / s。

公开(公告)号：US06352594B2

公开(公告)日：2002-03-05

申请号：US09229975

申请日：1999-01-14

申请人： Robert C. Cook ,  Daniel L. Brors

发明人： Robert C. Cook ,  Daniel L. Brors

IPC分类号： C23C1648

CPC分类号： H01L21/67757 ,  C23C16/44 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/509 ,  C23C16/54 ,  C30B25/14 ,  H01J37/32733 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： A multiwafer chemical vapor deposition (CVD) reactor providing improved material deposition uniformity through use of improved gas injection and exhaust apparatus. The reactor includes a wafer boat for supporting a vertical stack of wafers, spaced apart for passage of a reactant gas. A preferred embodiment of the gas injector is in the form of a vertically oriented body having at a first end a gas inlet, and extending inward from a wall of the reactor towards the wafer boat, terminating in a widened injector outlet. The injector body and outlet extend vertically a distance approximating the height of the wafer boat, and the outlet is widened to provide an improved flow of gas across the wafer. A face of the injector outlet contains a plurality of gas ejecting holes, arranged to provide a uniform supply of reactant gas over each wafer surface. The exhaust manifold is similarly configured, having a plurality of exhaust ports distributed over the height of the manifold to assist in preserving the uniform flow of reactant gas across each wafer.

摘要翻译： 多层化学气相沉积（CVD）反应器，通过使用改进的气体注入和排气装置提供改进的材料沉积均匀性。 反应器包括用于支撑垂直堆叠的晶片的晶片舟皿，间隔开以供反应气体通过。 气体注射器的优选实施例是垂直定向的主体的形式，其在第一端具有气体入口，并且从反应器的壁朝向晶片舟向内延伸，终止于加宽的喷射器出口。 喷射器主体和出口在垂直方向上延伸近似于晶片舟的高度的距离，并且出口被加宽以提供改进的气体流过晶片。 喷射器出口的表面包含多个气体喷射孔，其设置成在每个晶片表面上提供均匀的反应气体供应。 排气歧管被类似地构造，具有分布在歧管的高度上的多个排气口，以帮助保持反应气体均匀流过每个晶片。

公开(公告)号：US06660339B1

公开(公告)日：2003-12-09

申请号：US10070485

申请日：2002-06-21

申请人： Saswati Datta ,  Paul Amaat Raymond Gerard France ,  Arseniy Valerevich Radomyselskiy

发明人： Saswati Datta ,  Paul Amaat Raymond Gerard France ,  Arseniy Valerevich Radomyselskiy

IPC分类号： C23C1648

CPC分类号： C23C14/582 ,  C23C14/12

摘要： The present invention relates to a process, preferably a continuous process, of coating a substrate, which allows water vapor and preferably air permeation, with a hydrophobic coating. The process preferably uses a thin film vacuum condensation step to create a monomer coating which is cured in situ after the coating. The process has the benefit of allowing continuous operation and providing an alternative to existing processes for hydrophobic coating. The substrates are coated such that the water vapour permeation sites are not blocked by the coating to maintain the desired breathability. The static water contact angle on the surface of such substrates is more than 95°. Such substrates are preferably employed in absorbent articles such as diapers, incontinence products, underarm sweat pads, sanitary napkins, catamenials, pantiliners, breast pads, shoe inserts of bandages or alternatively in protective garments such as gloves or rain coats for which water vapor transmission in particular from the inside to the outside is highly desirable.

摘要翻译： 本发明涉及一种使疏水性涂层涂覆基底的方法，优选连续方法，其允许水蒸气，优选空气渗透。 该方法优选使用薄膜真空冷凝步骤以产生在涂覆之后原位固化的单体涂层。 该方法具有允许连续操作并提供用于疏水涂覆的现有方法的替代物的优点。 涂覆基材使得水蒸气渗透部位不被涂层阻挡以保持所需的透气性。 这种基板表面的静水接触角大于95°。 这些基材优选用于吸收制品，例如尿布，尿失禁产品，腋下汗垫，卫生巾，月经垫，短裤护垫，乳垫，绷带鞋垫，或替代地防护衣服如手套或雨衣， 特别是从内向外是非常需要的。

公开(公告)号：US06286451B1

公开(公告)日：2001-09-11

申请号：US08865267

申请日：1997-05-29

申请人： Tetsuya Ishikawa ,  Pavel Staryuk ,  Hiroji Hanawa

发明人： Tetsuya Ishikawa ,  Pavel Staryuk ,  Hiroji Hanawa

IPC分类号： C23C1648

CPC分类号： C23C16/4411 ,  C23C16/4405 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522

摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

摘要翻译： 本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。 本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

公开(公告)号：US06274206B1

公开(公告)日：2001-08-14

申请号：US08468612

申请日：1995-06-05

申请人： Manuel C. Turchan ,  Pravin Mistry

发明人： Manuel C. Turchan ,  Pravin Mistry

IPC分类号： C23C1648

CPC分类号： C23C16/44 ,  C23C14/0605 ,  C23C14/22 ,  C23C14/28 ,  C23C16/26 ,  C23C16/27 ,  C23C16/4418 ,  C23C16/48 ,  C23C26/00 ,  C30B23/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/04 ,  F16C33/62 ,  F41A21/04 ,  Y10S427/103 ,  Y10S427/104

摘要： Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized constituent element is reacted by the energy to alter its physical structure (e.g., from carbon to diamond) to that of a composite material which is diffused back into the substrate as a composite material. An additional secondary element, which can be the same as or different from the constituent element, may optionally be directed (e.g., sprayed) onto the substrate to augment, enhance and/or modify the formation of the composite material, as well as to supply sufficient or additional material for fabricating one or more coatings on the surface of the substrate. The process can be carried out in an ambient environment (e.g., without a vacuum), and without pre-heating or post-cooling of the substrate. The process is truly heteroepitaxial, and is suitable for treating substrates of complex geometries, and coating all sides of such substrates either evenly or selectively. The process may also be used as an adjunct to conventional CVD-type processes, to eliminate the need for heating the substrate to high temperatures. Articles formed by the disclosed processes are described, including three-dimensional objects.

摘要翻译： 诸如来自一个或多个激光器的能量被引导到衬底的表面以便移动和汽化衬底（例如钢）内的构成元件（例如，碳化物）。 蒸发的构成元素通过能量反应以改变其物理结构（例如，从碳到金刚石）到​​作为复合材料漫反射到基底中的复合材料的物理结构。 另外可以与构成元件相同或不同的次要元件可任选地被引导（例如喷涂）到基底上以增强，增强和/或改变复合材料的形成，以及供应 用于在衬底的表面上制造一个或多个涂层的足够的或附加的材料。 该方法可以在周围环境（例如，没有真空）中进行，并且不需要对基材进行预热或后冷却。 该工艺是真正的异质外延，适用于处理复杂几何形状的基材，并均匀或选择性地涂覆这些基材的所有面。 该方法也可以用作常规CVD型工艺的辅助装置，以消除将衬底加热到​​高温的需要。 描述由所公开的方法形成的物品，包括三维物体。

公开(公告)号：US06497194B1

公开(公告)日：2002-12-24

申请号：US09359534

申请日：1999-07-22

申请人： Charles J. Libby ,  Billy W. Ward

发明人： Charles J. Libby ,  Billy W. Ward

IPC分类号： C23C1648

CPC分类号： H01L21/2633 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/2067 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31745

摘要： Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c) for translating along a second axis perpendicular to the first axis, and d) for rotating about a third axis perpendicular to both the first axis and the second axis. The work stage assembly has a work stage axis substantially parallel to the third axis. The first particle beam source for interacting with the workpiece is supported by the work stage assembly. The first particle beam source has a first particle beam axis. In one embodiment, the first particle beam source is oriented so that the first particle beam axis forms an angle with the third axis. In another embodiment, the first particle beam source is tiltable from a first position, with the first particle beam axis substantially parallel to the third axis, to a second position, with the first particle beam axis forming an angle with the third axis. Thus, the particle beam system can etch and image a vertical cross-section of the workpiece without offsetting the work stage axis from the third axis.

公开(公告)号：US06461692B2

公开(公告)日：2002-10-08

申请号：US09117285

申请日：1998-10-26

申请人： Toshiaki Fujii ,  Motoaki Adachi ,  Kikuo Okuyama

发明人： Toshiaki Fujii ,  Motoaki Adachi ,  Kikuo Okuyama

IPC分类号： C23C1648

CPC分类号： C23C16/402 ,  C23C16/409 ,  C23C16/487 ,  C23C16/50 ,  H01J37/3233

摘要： A method an apparatus for chemical vapor deposition for producing a thin film. The method includes the steps of: introducing a reactive gas into a reaction chamber wherein a substrate is supported in the reaction chamber; combining charged particles with a component of the reactive gas for ionizing the component; and electrostatically depositing the ionized component onto the substrate in an electric field. Charged particles may be photoelectrons or positive or negative ions produced by discharge. The reactive gas may be solely an ingredient gas containing a component for a thin film or a mixture of the ingredient gas and an oxidizing or reducing gas. The apparatus includes a reaction chamber including a support for a substrate, a device for introducing a reactive gas into the reaction chamber, an electric discharge device, and a device for forming an electric field in the reaction chamber in a direction to the support for the substrate, and an outlet for discharging the reactive gas.

摘要翻译： 一种用于生产薄膜的化学气相沉积装置的方法。 该方法包括以下步骤：将反应气体引入反应室，其中将基底支撑在反应室中; 将带电粒子与反应气体的组分结合起来，用于离子化该组分; 并在电场中将离子化的组分静电沉积到衬底上。 带电粒子可以是光电子或通过放电产生的正离子或负离子。 反应性气体可以单独是含有薄膜成分或成分气体和氧化还原气体的混合物的成分气体。 该装置包括反应室，该反应室包括用于基板的支撑件，用于将反应气体引入反应室的装置，放电装置，以及用于在反应室中朝着支撑件的方向形成电场的装置 基板和用于排出反应气体的出口。

公开(公告)号：US06352593B1

公开(公告)日：2002-03-05

申请号：US08909461

申请日：1997-08-11

申请人： Daniel L. Brors ,  Robert C. Cook

发明人： Daniel L. Brors ,  Robert C. Cook

IPC分类号： C23C1648

CPC分类号： C23C16/44 ,  C23C16/4404 ,  C23C16/481

摘要： A semiconductor wafer or flat panel display process chamber for thermally driven, chemical vapor deposition, and/or plasma enhanced chemical vapor deposition processes includes a chamber for loading/unloading the substrate to be processed, and another chamber for processing. The substrate is heated with multiple zone radiant heaters arranged around the processing chamber to provide uniform heating. Process gases are injected into and exhausted in a cross flow fashion. The chamber may be used for plasma processing. Shield plates prevent deposition of reactant species on chamber walls, and also serve to diffuse heat uniformly the chamber.

摘要翻译： 用于热驱动，化学气相沉积和/或等离子体增强化学气相沉积工艺的半导体晶片或平板显示处理室包括用于加载/卸载待处理衬底的腔室和用于处理的另一室。 用设置在处理室周围的多个区域辐射加热器加热衬底以提供均匀的加热。 工艺气体以交叉流方式注入和排出。 该室可用于等离子体处理。 屏蔽板防止反应物物质沉积在室壁上，并且还用于使腔室均匀地散热。

公开(公告)号：US06253703B1

公开(公告)日：2001-07-03

申请号：US08415169

申请日：1995-03-31

申请人： Hiroshi Echizen ,  Satoshi Takaki

发明人： Hiroshi Echizen ,  Satoshi Takaki

IPC分类号： C23C1648

CPC分类号： H01J37/32357 ,  C23C16/511

摘要： A microwave plasma CVD apparatus comprising a hermetically sealed vacuum vessel, an evacuating means for evacuating the vacuum vessel, and microwave introducing means for introducing a microwave through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits. The microwave plasma CVD apparatus solves all the problems in the conventional microwave plasma CVD apparatus, operates at a high rate of operation, improves working efficiency, reduces the manufacturing cost of a-Si devices, and reduces variance in performance between devices employing films deposited by the microwave plasma CVD apparatus. Since the microwave plasma CVD apparatus does not employ any large electromagnet, a film can be formed on a surface having a large area simply by selectively deciding a microwave propagation mode. Since the distance between the cavity resonator and the coupling hole can be varied, the microwave impedance can always be matched regardless of the sectional area of ionization, so that microwave power is used effectively and the gases are used at a very high efficiency.

摘要翻译： 一种微波等离子体CVD装置，包括密封的真空容器，用于抽空真空容器的抽空装置和微波引入装置，用于通过微波传输电路将微波引入真空容器中，以在真空容器内产生等离子体。 微波传输电路包括一体地设置有两个匹配电路的空腔谐振器。 微波等离子体CVD装置解决了传统的微波等离子体CVD装置中的所有问题，以高运行率运行，提高了工作效率，降低了a-Si器件的制造成本，并且降低了使用由 微波等离子体CVD装置。 由于微波等离子体CVD装置不使用任何大的电磁体，所以通过选择性地决定微波传播模式，可以在具有大面积的表面上形成膜。 由于空腔谐振器和耦合孔之间的距离可以改变，所以无论离子化的截面积如何，微波阻抗总是可以匹配的，从而有效地使用微波功率，并以非常高的效率使用气体。