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    RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS
    23.
    发明申请
    RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS 审中-公开
    稀土集团IV纳米晶层

    公开(公告)号：WO2004066346A3

    公开(公告)日：2007-11-29

    申请号：PCT/CA2004000076

    申请日：2004-01-22

    Applicant: GROUP IV SEMICONDUCTOR INC ,  HILL STEVEN E

    Inventor： HILL STEVEN E

    IPC: H01L33/18 ,  H01L33/34 ,  H01L33/50 ,  H01S3/06 ,  H01S3/063 ,  H01S3/16 ,  H01S3/23 ,  H01S5/00

    CPC classification number: H01S3/0602 ,  H01L33/18 ,  H01L33/343 ,  H01S3/063 ,  H01S3/0637 ,  H01S3/1628 ,  H01S3/169 ,  H01S3/2383 ,  H01S3/2391

    Abstract: The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer. Furthermore, photonic devices employing the new materials are also provided. The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, a composite material comprising the a matrix in which is dispersed a doped semiconductor powder, and photonic devices comprising doped semiconductor powders and doped semiconductor layers.

    Abstract translation: 掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上 层。 本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。 此外，还提供了采用新材料的光子器件。 本发明提供了包含IV族半导体和稀土元素的纳米晶体的掺杂半导体粉末，稀土元素分散在IV族半导体纳米晶体的表面上。 本发明还提供了制备上述掺杂半导体粉末的方法，包括其中分散有掺杂半导体粉末的基质的复合材料和包含掺杂半导体粉末和掺杂半导体层的光子器件。

    METHOD FOR LOCALLY MODIFYING ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CRYSTALLINE MATERIALS AND DEVICES MADE FROM SUCH MATERIALS
    24.
    发明申请
    METHOD FOR LOCALLY MODIFYING ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CRYSTALLINE MATERIALS AND DEVICES MADE FROM SUCH MATERIALS 审中-公开
    用于局部修改晶体材料的电子和光电性能的方法和从这些材料制成的器件

    公开(公告)号：WO01095401A1

    公开(公告)日：2001-12-13

    申请号：PCT/GB2001/002512

    申请日：2001-06-07

    IPC: H01L33/00 ,  H01L33/02 ,  H01L33/34 ,  H01S5/20 ,  H01S5/30

    CPC classification number: H01L33/34 ,  H01L33/0008 ,  H01L33/0037 ,  H01L33/025 ,  H01S5/2063

    Abstract: An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

    Abstract translation: 由结晶材料制造的电子或光电子器件，其中所述结晶材料的带隙特征的参数已经通过在所述结晶材料的晶格结构中引入原子尺度的失真而局部地修饰，并且电子和/或光电参数 所述器件取决于所述带隙的修改，例如包括由p型层（11）形成的结（10）和n型层（12）的辐射发射光电子半导体器件，两者均由间接形成 带隙半导体材料。 p型层（11）包含位错环的阵列，其产生应变场以在空间上限制并促进电荷载体的辐射复合。

    GROUP III NITRIDE COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
    25.
    发明申请
    GROUP III NITRIDE COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    III类氮化物半导体及其制造方法

    公开(公告)号：WO01069662A1

    公开(公告)日：2001-09-20

    申请号：PCT/JP2001/001396

    申请日：2001-02-23

    IPC: H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  C30B29/38 ,  H01L33/00

    CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/025 ,  H01S5/0213 ,  H01S5/32341 ,  H01S2304/12

    Abstract: A sapphire substrate (1) is etched in a stripe pattern having a width of 10 mu m, an interval of 10 mu m, and a depth of 10 mu m. An AlN buffer layer (2) with a thickness of about 40 nm is formed mainly on the top and bottom surfaces of a step on the substrate (1). A GaN layer (3) is formed by vertical and horizontal epitaxial growth. Thus the step is covered by the buffer layer (21) grown on the top surface of the step by horizontal epitaxy, and therefore the surface is planarized. The threading dislocations in the portion of the GaN layer (3) above the bottom of the step are significantly suppressed compared with the portion thereof above the top of the step.

    Abstract translation: 将蓝宝石基板（1）以宽度10μm，间隔10μm，深度10μm的条纹图案进行蚀刻。 主要在基板（1）上的台阶的顶表面和底表面上形成厚度约为40nm的AlN缓冲层（2）。 通过垂直和水平外延生长形成GaN层（3）。 因此，通过水平外延在步骤的顶表面上生长的缓冲层（21）覆盖该步骤，因此该表面被平坦化。 与步骤顶部之上的部分相比，步骤底部之上的GaN层（3）部分的穿透位错显着地被抑制。

    MULTI COLOR SOLID STATE LED/LASER
    26.
    发明申请
    MULTI COLOR SOLID STATE LED/LASER 审中-公开
    多色固态LED /激光

    公开(公告)号：WO01037351A1

    公开(公告)日：2001-05-25

    申请号：PCT/US2000/030183

    申请日：2000-11-01

    IPC: H01L25/075 ,  H01L27/15 ,  H01L33/08 ,  H01L33/30 ,  H01L33/34 ,  H01L33/50 ,  H01S5/026 ,  H01S5/40 ,  H01L33/00

    CPC classification number: H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

    Abstract: A light emitting diode (LED) (10) grown on a substrate (16) doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer (11), pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs (10) emitting UV light and grown on a sapphire substrate (16) doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface.

    Abstract translation: 在掺杂有一种或多种稀土或过渡元素的衬底（16）上生长的发光二极管（LED）（10）。 掺杂剂离子吸收来自LED的有源层（11）的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于在掺杂有铬的蓝宝石衬底（16）上生长的氮化物基LED（10）。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。

    PHOTOLUMINESCENT SEMICONDUCTOR MATERIALS
    27.
    发明申请
    PHOTOLUMINESCENT SEMICONDUCTOR MATERIALS 审中-公开
    光致发光半导体材料

    公开(公告)号：WO00003230A1

    公开(公告)日：2000-01-20

    申请号：PCT/CA1999/000642

    申请日：1999-07-09

    IPC: G01N21/64 ,  G01N21/62 ,  G01N33/543 ,  G01N33/551 ,  G01N33/58 ,  H01L33/26 ,  H01L33/34 ,  H01L33/00

    CPC classification number: H01L33/346 ,  G01N21/6489 ,  G01N33/54373 ,  G01N33/551 ,  G01N33/582

    Abstract: Semiconductor materials having a porous texture are modified with a recognition element and produce a photoluminescent response on exposure to electromagnetic radiation. The recognition elements, which can be selected from biomolecular, organic and inorganic moieties, interact with a target analyte to produce a modulated photoluminescent response, as compared with that of semiconductor materials modified with a recognition element only.

    Abstract translation: 具有多孔纹理的半导体材料用识别元件进行修饰，并在暴露于电磁辐射时产生光致发光响应。 与仅用识别元件改性的半导体材料相比，可以从生物分子，有机和无机部分选择的识别元件与靶分析物相互作用以产生调制的光致发光响应。

    FAST LUMINESCENT SILICON
    28.
    发明申请
    FAST LUMINESCENT SILICON 审中-公开
    快速发光硅

    公开(公告)号：WO99065085A1

    公开(公告)日：1999-12-16

    申请号：PCT/CA1999/000521

    申请日：1999-06-04

    IPC: H01L21/205 ,  H01L27/15 ,  H01L33/34 ,  H01L33/00

    CPC classification number: H01L33/34

    Abstract: There are provided mesoporous silica materials containing in their pores stabilized clusters of silicon atoms, of size 2 nanometers or less, and capable of photoluminescence to emit fast photons. They are prepared by chemical vapour deposition of silicon or a silicon precursor such as disilane, under soft conditions such as temperature of 100-150 DEG C, into the mesopores of silicate films which have mesoporous channels prepared by growth of the films using a template to control their sizes, but without removing the template residues from the films prior to the chemical vapour deposition. The template residues serve to limit the size of the silicon clusters which conform. The use of the soft conditions on CVD retains the template residues in an intact, substantially unchanged form. The resultant films have clusters of silicon, of 2 nanometer size or less, anchored to the mesopores, and air stable, so that they can be used in optoelectronic devices in conjunction with standard silicon semiconductors.

    Abstract translation: 提供介孔二氧化硅材料，其孔中含有尺寸为2纳米或更小的硅原子的稳定团簇，并能够发光以发射快速光子。 它们通过硅或硅前体如乙硅烷的化学气相沉积在诸如温度为100-150℃的软条件下制备成具有通过使用模板生长薄膜制备的介孔的硅酸盐膜的介孔， 控制其尺寸，但是在化学气相沉积之前不从膜中去除模板残留物。 模板残基用于限制符合的硅簇的尺寸。 在CVD上使用软性条件将模板残留物保持在完整的，基本上不变的形式。 所得膜具有2纳米尺寸或更小的硅簇，锚定于中孔，并且空气稳定，使得它们可以与标准硅半导体结合使用在光电子器件中。

    半導体素子および半導体素子の製造方法
    30.
    发明申请
    半導体素子および半導体素子の製造方法 审中-公开

    公开(公告)号：WO2022153983A1

    公开(公告)日：2022-07-21

    申请号：PCT/JP2022/000597

    申请日：2022-01-11

    Applicant: 日亜化学工業株式会社

    Inventor： 門脇　拓也 ,  川添　忠

    IPC: H01L31/10 ,  H01L33/34 ,  H01L21/22 ,  H01L21/265

    Abstract: ドレスト光子を利用して動作する新しい半導体素子およびその製造方法が求められている。半導体素子の製造方法は、ｐ型およびｎ型の一方である第１導電型の第１不純物を第１濃度で有するシリコン基板と、前記シリコン基板上に設けられた、前記第１導電型の第２不純物を前記第１濃度よりも低い第２濃度で有する第１シリコン半導体層と、ｐ型およびｎ型の他方である第２導電型の第３不純物を有する第２シリコン半導体層とを、含むシリコン半導体層と、を備える半導体積層体を準備する工程と、前記シリコン半導体層に順方向電流を流しながら、所定のピーク波長を有する光で前記シリコン半導体層を照射して、前記第３不純物を拡散させる工程と、を含む。

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