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1.チップ支持基板、チップ支持方法、三次元集積回路、アセンブリ装置及び三次元集積回路の製造方法 审中-公开
Title translation: 芯片支持基板,支持芯片的方法,三维集成电路,组装设备和制造三维集成电路的方法公开(公告)号:WO2014046052A1
公开(公告)日:2014-03-27
申请号:PCT/JP2013/074876
申请日:2013-09-13
Applicant: 国立大学法人東北大学
CPC classification number: H01L25/0657 , B23K20/002 , B23K20/023 , B23K20/16 , H01L21/52 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/76898 , H01L23/147 , H01L23/3121 , H01L23/32 , H01L23/49827 , H01L23/49838 , H01L23/49894 , H01L23/50 , H01L23/544 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/95 , H01L24/96 , H01L24/97 , H01L25/0652 , H01L25/50 , H01L2221/68327 , H01L2221/68368 , H01L2221/68381 , H01L2223/5442 , H01L2223/54426 , H01L2224/1145 , H01L2224/1146 , H01L2224/13023 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16238 , H01L2224/27436 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/75251 , H01L2224/75611 , H01L2224/75701 , H01L2224/75723 , H01L2224/75745 , H01L2224/75753 , H01L2224/75901 , H01L2224/81002 , H01L2224/81121 , H01L2224/81143 , H01L2224/81193 , H01L2224/81203 , H01L2224/8138 , H01L2224/81395 , H01L2224/81904 , H01L2224/81907 , H01L2224/83191 , H01L2224/8385 , H01L2224/83907 , H01L2224/9202 , H01L2224/95001 , H01L2224/95145 , H01L2224/95146 , H01L2224/96 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06593 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/1461 , H01L2924/15311 , H01L2924/00012 , H01L2224/81 , H01L2924/00014 , H01L2924/01047 , H01L2924/014 , H01L2224/83 , H01L2224/11 , H01L2924/00 , H01L2224/67
Abstract: 本発明は、基板上に形成されチップ3Aを吸着する親液性領域4と、前記基板上であって前記親液性領域内に形成され、前記チップに静電力を発生させる電極6と、を備えた、チップ支持基板。また、基板上に形成された親液性領域と、前記基板上であって前記親液性領域内に形成された電極と、を備えるチップ支持基板の前記親液性領域上に液体15を介しチップを配置する工程と、前記電極に電圧を印加することにより前記電極に対応するチップに静電力を発生させる工程と、を含む、チップ支持方法である。
Abstract translation: 本发明是一种芯片支撑基板,其设置有形成在基板上并使用抽吸保持芯片(3A)的亲液性区域(4),以及形成在基板上的亲液区域内并用于产生静电的电极(6) 力量在芯片上。 本发明也是一种用于支撑芯片的方法,包括:将芯片定位在设置在基板上的设置有亲液性区域的芯片支撑基板的亲液性区域和在亲液性区域内形成的电极的步骤 所述衬底,介于所述芯片和所述亲液区域之间的流体(15); 以及通过向电极施加电压而在对应于电极的芯片上产生静电力的步骤。
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公开(公告)号:WO2012002273A1
公开(公告)日:2012-01-05
申请号:PCT/JP2011/064532
申请日:2011-06-24
IPC: H05K3/34 , B23K1/00 , B23K1/008 , B23K31/02 , H01L21/60 , B23K101/40 , B23K101/42
CPC classification number: B23K3/0607 , B23K1/0016 , B23K1/008 , B23K1/20 , B23K1/206 , B23K3/04 , B23K3/082 , B23K31/02 , B23K35/38 , B23K2201/40 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13155 , H01L2224/13164 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/75101 , H01L2224/7515 , H01L2224/75272 , H01L2224/81002 , H01L2224/81011 , H01L2224/81014 , H01L2224/81019 , H01L2224/81054 , H01L2224/8109 , H01L2224/81193 , H01L2224/81211 , H01L2224/81805 , H01L2224/81815 , H01L2224/81907 , H01L2224/83104 , H01L2924/01322 , H05K3/305 , H05K3/3436 , H05K13/0465 , H05K2203/083 , H05K2203/085 , H05K2203/087 , Y02P70/613 , H01L2924/00012 , H01L2924/00014 , H01L2924/0105 , H01L2924/01047 , H01L2924/00
Abstract: フラックス除去の工程を省略することができるにもかかわらず、基板間の位置ずれを軽減する半田付け方法を提供する。 複数の基板50a、50bに仮止め剤55を塗布して、仮止め剤55を介して基板同士を仮止めした状態でヒータ33によって加熱し、半田54の溶融する前または半田54の溶融中に仮止め剤55を蒸発させつつ、溶融した半田54を介して基板50a、50bを半田接合する
Abstract translation: 提供一种减少基板之间的位置偏差的焊接方法,即使可以省略去焊工艺。 在多个基板(50a,50b)上施加临时固定剂(55),在基板(50a,50b)被暂时固定的状态下,基板(50a,50b)被加热器(33)加热 通过临时固定剂(55)彼此相连,临时固定剂(55)在焊料(54)熔化之前或焊料(54)熔化之前被蒸发,并且基板(50a,50b) 通过熔融焊料(54)焊接并彼此接合。
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公开(公告)号:WO2015053356A1
公开(公告)日:2015-04-16
申请号:PCT/JP2014/077040
申请日:2014-10-09
Applicant: 学校法人早稲田大学
Inventor: 巽 宏平
CPC classification number: H01L24/10 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/75 , H01L24/76 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/84 , H01L24/85 , H01L2224/0345 , H01L2224/03464 , H01L2224/04 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05173 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05673 , H01L2224/11334 , H01L2224/1134 , H01L2224/13012 , H01L2224/13017 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13294 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13411 , H01L2224/136 , H01L2224/13611 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/24225 , H01L2224/24245 , H01L2224/245 , H01L2224/2499 , H01L2224/29012 , H01L2224/29017 , H01L2224/29147 , H01L2224/32227 , H01L2224/32245 , H01L2224/37147 , H01L2224/3716 , H01L2224/40095 , H01L2224/40227 , H01L2224/40991 , H01L2224/40996 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48873 , H01L2224/48991 , H01L2224/48996 , H01L2224/73255 , H01L2224/73265 , H01L2224/73273 , H01L2224/73277 , H01L2224/75754 , H01L2224/76754 , H01L2224/81002 , H01L2224/81205 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81473 , H01L2224/81815 , H01L2224/8184 , H01L2224/81901 , H01L2224/8192 , H01L2224/82002 , H01L2224/82101 , H01L2224/82399 , H01L2224/83002 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83464 , H01L2224/83473 , H01L2224/83815 , H01L2224/8384 , H01L2224/83901 , H01L2224/8392 , H01L2224/8492 , H01L2224/85205 , H01L2224/85447 , H01L2224/8592 , H01L2224/9201 , H01L2924/00011 , H01L2924/3656 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01028 , H01L2924/01074 , H01L2924/01023 , H01L2924/014 , H01L2924/01029 , H01L2924/01047 , H01L2924/01079 , H01L2924/01046 , H01L2924/01045 , H01L2224/18 , H01L2224/24 , H01L2224/82 , H01L2224/83205
Abstract: 電気回路の電極間を点状又は線状に接触させた状態でメッキにより接続することで、隙間のない密着した接続を可能とする電極接続方法等を提供する。 電気的に接続される電気回路の複数の電極間の少なくとも一部を直接又は間接的に接触させ、当該接触部分の周辺にメッキ液が流通した状態で前記電極間をメッキして接続するものである。また、前記接触部分は線状又は点状に保持されているものである。さらに、メッキを行う材料として、ニッケル若しくはニッケル合金、又は、銅もしくは銅合金を用い、接続される電極の表面の材料が、ニッケル若しくはニッケル合金、銅若しくは銅合金、金若しくは金合金、銀若しくは銀合金、又は、パラジウム若しくはパラジウム合金とするものである。
Abstract translation: 提供了一种电极连接方法等,其可以通过电镀连接而紧密连接而不会留下间隙,而电路中的电极以点或线性图案彼此接触。 在电路中的多个电连接的电极之间的间隔的至少一部分中直接或间接地进行接触,并且在电镀液体围绕接触部的周边流动的同时电镀并连接电极之间的间隔。 此外,接触部分保持线性或点阵图案。 此外,镍或镍合金或铜或铜合金用作进行电镀的材料,而要连接的电极表面的材料是镍或镍合金,铜或铜合金,金或 金合金,银或银合金,或钯或钯合金。
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4.感光性樹脂組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置 审中-公开
Title translation: 感光树脂组合物,胶粘剂,粘合片,粘合剂图案,带粘合层的半导体滤波器和半导体器件公开(公告)号:WO2015008330A1
公开(公告)日:2015-01-22
申请号:PCT/JP2013/069303
申请日:2013-07-16
Applicant: 日立化成株式会社
CPC classification number: C09J179/08 , C09J7/20 , C09J2201/122 , C09J2203/326 , C09J2205/31 , C09J2479/08 , G03F7/027 , G03F7/037 , G03F7/038 , G03F7/0387 , G03F7/0751 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2224/1132 , H01L2224/1141 , H01L2224/1148 , H01L2224/131 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/13187 , H01L2224/1329 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13364 , H01L2224/13369 , H01L2224/13387 , H01L2224/1339 , H01L2224/16145 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/27515 , H01L2224/27618 , H01L2224/27848 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29387 , H01L2224/2939 , H01L2224/29391 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/81002 , H01L2224/81203 , H01L2224/83002 , H01L2224/83203 , H01L2224/83855 , H01L2224/83856 , H01L2224/83862 , H01L2224/92 , H01L2224/9211 , H01L2224/94 , H01L2924/07025 , H01L2924/066 , H01L2924/0665 , H01L2924/00014 , H01L2924/05442 , H01L2924/00012 , H01L2224/27 , H01L2224/11 , H01L2924/014 , H01L2924/0538 , H01L2924/01044 , H01L2224/81 , H01L2224/83 , H01L21/78
Abstract: 本発明は、(A)末端基としてフェノール性水酸基を有するアルカリ可溶性樹脂、(B)放射線重合性化合物及び(C)光開始剤を含有する感光性樹脂組成物、並びにそれを用いたフィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置を提供する。
Abstract translation: 本发明提供(A)具有酚羟基作为末端基团的碱溶性树脂,(B)可辐射聚合化合物,和(C)含有光引发剂的感光性树脂组合物。 本发明还提供一种粘合片,粘合剂图案,设置有粘合剂层的半导体晶片,半导体器件和使用其的膜粘合剂。
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公开(公告)号:WO2015009238A1
公开(公告)日:2015-01-22
申请号:PCT/SG2014/000335
申请日:2014-07-16
Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
Inventor: WICKRAMANAYAKA, Sunil
CPC classification number: H01L24/83 , H01L21/563 , H01L24/743 , H01L24/75 , H01L24/81 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2224/13009 , H01L2224/13147 , H01L2224/16145 , H01L2224/27515 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/7501 , H01L2224/75102 , H01L2224/7511 , H01L2224/75184 , H01L2224/75264 , H01L2224/753 , H01L2224/7598 , H01L2224/81002 , H01L2224/81093 , H01L2224/81097 , H01L2224/81193 , H01L2224/81209 , H01L2224/81903 , H01L2224/81907 , H01L2224/83002 , H01L2224/8309 , H01L2224/83093 , H01L2224/83097 , H01L2224/8312 , H01L2224/83193 , H01L2224/83209 , H01L2224/83855 , H01L2224/83856 , H01L2224/83862 , H01L2224/83907 , H01L2224/83911 , H01L2224/9205 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06593 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00014
Abstract: An apparatus and a method for chip-to-wafer integration is provided. The apparatus includes a coating module, a bonding module and a cleaning module. The method includes the steps of placing at least one chip on a wafer to form an integrated product, forming a film on the integrated product, such that the integrated product is substantially fluid-tight, and exerting a predetermined positive pressure on the film during permanent bonding of the at least one chip to the wafer. The method further includes the step of removing the film from the integrated product after permanent bonding of the at least one chip to the wafer.
Abstract translation: 提供了一种用于芯片到晶片集成的装置和方法。 该装置包括涂覆模块,粘合模块和清洁模块。 该方法包括以下步骤:将至少一个芯片放置在晶片上以形成集成的产品,在集成产品上形成膜,使得集成产品基本上是流体密封的,并且在永久性地在膜上施加预定的正压力 将至少一个芯片接合到晶片。 该方法还包括在将至少一个芯片永久地接合到晶片之后,从集成产品中去除膜的步骤。
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6.
公开(公告)号:WO2014149338A1
公开(公告)日:2014-09-25
申请号:PCT/US2014/017389
申请日:2014-02-20
Applicant: ORACLE INTERNATIONAL CORPORATION
Inventor: THACKER, Hiren D. , KRISHNAMOORTHY, Ashok V. , CUNNINGHAM, John E. , ZHANG, Chaoqi
IPC: H01L21/60 , H01L23/485 , H01L23/29 , H01L23/31 , B23K3/06 , H01L21/02 , H01L25/065 , H01L21/56 , H01L21/683
CPC classification number: H01L24/14 , B23K3/0623 , H01L21/561 , H01L21/6836 , H01L23/296 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/74 , H01L24/81 , H01L24/98 , H01L25/0657 , H01L2221/68327 , H01L2221/68381 , H01L2224/03452 , H01L2224/0361 , H01L2224/0362 , H01L2224/0401 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05573 , H01L2224/05686 , H01L2224/11005 , H01L2224/11013 , H01L2224/11015 , H01L2224/11334 , H01L2224/13099 , H01L2224/13561 , H01L2224/1357 , H01L2224/13644 , H01L2224/13686 , H01L2224/17517 , H01L2224/742 , H01L2224/81002 , H01L2224/81141 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/05432 , H01L2224/11 , H01L2224/03 , H01L2924/00012 , H01L2924/05442 , H01L2224/05552
Abstract: A multi-chip module ( MCM ) is described. This MCM includes at least two substrates that are mechanically coupled and aligned by positive and negative features on facing surfaces of the substrates. These positive and negative features may mate and self-lock with each other. The positive features may be self-populated into the negative features on at least one of the substrates using a hydrophilic layer in the negative feature. This hydrophilic layer may be used in conjunction with a hydrophobic layer surrounding the negative features on a top surface of at least one of the substrates.
Abstract translation: 描述了多芯片模块(MCM)。 该MCM包括至少两个基板,其通过在基板的相对表面上的正和负特征机械耦合和对准。 这些积极和消极的特征可以彼此交配和自锁。 可以使用负特征中的亲水层,在至少一个基板上将负面特征自身填充到负极特征中。 该亲水层可以与围绕至少一个基底的顶表面上的负特征的疏水层结合使用。
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7.PROTECTIVE LAYER FOR PROTECTING TSV TIPS DURING THERMO-COMPRESSIVE BONDING 审中-公开
Title translation: 用于在热压结合期间保护TSV提示的保护层公开(公告)号:WO2012167027A3
公开(公告)日:2013-04-25
申请号:PCT/US2012040388
申请日:2012-06-01
Applicant: TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , WEST JEFFREY ALAN
Inventor: WEST JEFFREY ALAN
IPC: H01L21/768 , H01L21/60 , H01L23/48
CPC classification number: H01L23/538 , H01L21/563 , H01L23/481 , H01L23/562 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/13009 , H01L2224/13025 , H01L2224/13027 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13566 , H01L2224/1357 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/13666 , H01L2224/13671 , H01L2224/13673 , H01L2224/13681 , H01L2224/14181 , H01L2224/1613 , H01L2224/16146 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81002 , H01L2224/81005 , H01L2224/81007 , H01L2224/81203 , H01L2224/81801 , H01L2924/1461 , H01L2924/15311 , H01L2924/3511 , H01L2924/3512 , H01L2924/014 , H01L2924/00 , H01L2924/00014 , H01L2924/01015 , H01L2924/01005 , H01L2924/01074
Abstract: A method (100) of protecting through-substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside (101). A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips (102). The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head (104). The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.
Abstract translation: 保护通过(TSV)管芯的通过衬底的接合损伤的方法(100)包括提供包括多个TSV管芯的衬底,所述TSV管芯具有包括有源电路,底部和多个TSV的顶部,所述TSV包括内部金属芯, 从顶部到达突出的TSV尖端,从底部延伸出来(101)。 在TSV模头的底部上形成保护层,包括在突出的TSV尖端(102)之间和之上。 TSV模具的上下结合到具有工件表面的工件上,并且其底部向上并与接合头(104)接触。 保护层通过防止接合头与突出的TSV尖端直接接触来减少接合过程中的损伤,包括TSV模头的翘曲。
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公开(公告)号:WO2015192004A1
公开(公告)日:2015-12-17
申请号:PCT/US2015/035566
申请日:2015-06-12
Applicant: ALPHA METALS, INC.
Inventor: GHOSHAL, Shamik , KUMAR, V., Sathish , VISHWANATH, Pavan , PANDHER, Ranjit, S. , CHANDRAN, Remya , MUKHERJEE, Sutapa , SARKAR, Siuli , SINGH, Bawa , BHATKAL, Ravindra, Mohan
CPC classification number: B22F1/0044 , B22F1/02 , B22F3/1017 , B22F3/22 , B22F5/006 , B22F7/04 , B22F2007/047 , B22F2301/255 , B22F2999/00 , B23K1/0016 , B23K3/0607 , B23K35/0244 , B23K35/3006 , B23K2201/40 , H01L21/6835 , H01L21/78 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/94 , H01L24/95 , H01L24/97 , H01L2221/68313 , H01L2221/68368 , H01L2224/04026 , H01L2224/05155 , H01L2224/05639 , H01L2224/11003 , H01L2224/11009 , H01L2224/111 , H01L2224/11332 , H01L2224/11334 , H01L2224/11438 , H01L2224/1144 , H01L2224/11505 , H01L2224/11848 , H01L2224/13139 , H01L2224/13294 , H01L2224/13295 , H01L2224/13311 , H01L2224/13324 , H01L2224/13339 , H01L2224/13347 , H01L2224/13355 , H01L2224/13363 , H01L2224/1338 , H01L2224/13384 , H01L2224/13387 , H01L2224/1339 , H01L2224/13393 , H01L2224/13411 , H01L2224/13439 , H01L2224/13444 , H01L2224/13455 , H01L2224/13464 , H01L2224/13469 , H01L2224/1349 , H01L2224/16227 , H01L2224/27002 , H01L2224/27003 , H01L2224/27009 , H01L2224/271 , H01L2224/27312 , H01L2224/2732 , H01L2224/27332 , H01L2224/27334 , H01L2224/27438 , H01L2224/2744 , H01L2224/27505 , H01L2224/2782 , H01L2224/27821 , H01L2224/27848 , H01L2224/29139 , H01L2224/29294 , H01L2224/29295 , H01L2224/29311 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29363 , H01L2224/29364 , H01L2224/2938 , H01L2224/29384 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/29411 , H01L2224/29439 , H01L2224/29444 , H01L2224/29455 , H01L2224/29464 , H01L2224/29469 , H01L2224/2949 , H01L2224/2969 , H01L2224/32225 , H01L2224/32245 , H01L2224/45014 , H01L2224/75251 , H01L2224/75316 , H01L2224/7598 , H01L2224/81002 , H01L2224/81191 , H01L2224/8184 , H01L2224/81948 , H01L2224/83002 , H01L2224/83191 , H01L2224/83193 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/8384 , H01L2224/83948 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2924/00014 , H01L2924/0463 , H01L2924/0503 , H01L2924/05032 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/2064 , H05K3/32 , H05K2203/1131 , B22F1/0018 , B22F1/025 , H01L2224/11 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2224/27 , H01L2924/01046 , H01L2924/01029 , H01L2924/01042 , H01L2924/01028 , H01L2924/0105 , H01L2924/01006 , H01L2924/01005 , H01L2224/45015 , H01L2924/207
Abstract: Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.
Abstract translation: 包括倒装芯片在内的多芯片和单一部件的裸片附着方法可以包括在基片上或模具的背面上印刷烧结膏。 打印可能涉及模版印刷,丝网印刷或分配过程。 糊剂可以在切割之前或在单独的模具的背面上印刷在整个晶片的背面。 烧结膜也可以被制造并转移到晶片,管芯或衬底。 后烧结步骤可以增加生产量。
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公开(公告)号:WO2014136241A1
公开(公告)日:2014-09-12
申请号:PCT/JP2013/056330
申请日:2013-03-07
Applicant: 東北マイクロテック株式会社
Inventor: 元吉 真
IPC: H01L25/065 , H01L21/60 , H01L25/07 , H01L25/18
CPC classification number: H01L24/14 , H01L23/147 , H01L23/49816 , H01L23/49827 , H01L23/544 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/17 , H01L24/81 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2224/02126 , H01L2224/0215 , H01L2224/0346 , H01L2224/0347 , H01L2224/0401 , H01L2224/05155 , H01L2224/05568 , H01L2224/05582 , H01L2224/05644 , H01L2224/0603 , H01L2224/06051 , H01L2224/09517 , H01L2224/10135 , H01L2224/10165 , H01L2224/1134 , H01L2224/11444 , H01L2224/1147 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13023 , H01L2224/13144 , H01L2224/1403 , H01L2224/16148 , H01L2224/16238 , H01L2224/17051 , H01L2224/17517 , H01L2224/32225 , H01L2224/73204 , H01L2224/81002 , H01L2224/81007 , H01L2224/8109 , H01L2224/8114 , H01L2224/81141 , H01L2224/81143 , H01L2224/81191 , H01L2224/81203 , H01L2224/81986 , H01L2224/95146 , H01L2224/97 , H01L2225/06513 , H01L2225/06593 , H01L2924/01322 , H01L2924/15192 , H01L2924/00 , H01L2224/16225 , H01L2924/01013 , H01L2924/01032 , H01L2924/01051 , H01L2924/0105 , H01L2924/013 , H01L2924/00013 , H01L2924/00014 , H01L2924/0665 , H01L2224/81
Abstract: 複数の電気配線用ランド(55a,55b,55c,55d)、複数の電気配線用ランドが配列された基準面から測った高さが複数の電気配線用ランドのそれぞれの高さよりも高く、複数の電気配線用ランドが配列された箇所以外の位置にそれぞれ配置され、それぞれ斜面を有する複数の壁パターン(53a,53b)を有する下側チップLCと、複数の電気配線用ランドの位置にそれぞれ対応して配置された複数の電気配線用バンプ(35a,35b,35c,35d)、複数の壁パターンの位置に対応して配列された錐状の複数のコーンバンプ(33a,33b)を有する上側チップUCとを備える構造により、0.2μm以下の高精度な位置合わせが容易に実現でき、積層した後の接合作業も簡単である積層体及びこの積層体の製造方法を提供する。
Abstract translation: 本发明提供一种层叠体和层叠体的制造方法,容易实现小于等于0.2μm的高精度取向,层叠后的接合工作简单,通过具有下部芯片(LC)和 上位芯片(UC)。 下芯片(LC)具有:多个电线使用区域(55a,55b,55c,55d); 并且从设置有多个电线用地的基准面测量的高度的多个壁图案(53a,53b)高于多个电线用地盘中的每个布置在 除了设置多个电线用地的位置之外的位置,并且各自具有斜率。 上部芯片(UC)具有:多个电线使用凸块(35a,35b,35c,35d),其分别对应于多个电线使用区域的各个位置设置; 以及与多个壁图案的位置相对应设置的多个圆锥形凸块(33a,33b)。
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公开(公告)号:WO2013076895A1
公开(公告)日:2013-05-30
申请号:PCT/JP2012/006030
申请日:2012-09-21
Applicant: パナソニック株式会社
IPC: H01L21/60 , H01L21/607
CPC classification number: H01L24/75 , H01L21/561 , H01L23/3121 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/7501 , H01L2224/75101 , H01L2224/75251 , H01L2224/75353 , H01L2224/7565 , H01L2224/75702 , H01L2224/75804 , H01L2224/75824 , H01L2224/81002 , H01L2224/81022 , H01L2224/81075 , H01L2224/81121 , H01L2224/81207 , H01L2224/81444 , H01L2224/81447 , H01L2224/97 , H01L2924/12041 , H01L2924/15747 , H01L2924/181 , H01L2933/0066 , H01L2924/00015 , H01L2924/01007 , H01L2224/81 , H01L2924/00 , H01L2924/00012
Abstract: フリップチップボンディング装置は、基板のそれぞれの電極上に接合補助剤を塗布して供給するディスペンサユニットを備え、第1電極と第2電極との間の金属接合を、少なくとも銅を含む金属間の超音波接合として行う際に、少なくとも第1電極と第2電極との接合界面の周囲に還元性を有する接合補助剤が存在する状態にて超音波接合を行うことにより、第1電極と第2電極との接合界面に既に形成されている銅の酸化膜を除去するとともに、超音波接合の実施に伴って接合界面に酸化膜が形成されることを抑制でき、求められる接合強度を確保しながら、少なくとも銅を含む金属間の接合として実現することができ、半導体素子の実装およびその半導体素子を搭載した基盤の製造におけるコスト削減を図ることができる。
Abstract translation: 该倒装芯片接合装置设置有分配器单元,其在基板上的每个电极上提供并施加接合辅助剂。 当第一电极和第二电极之间的金属接合通过至少包含铜的金属之间的超声波接合进行时,可以消除已经形成在第一电极和第二电极的接合界面上的氧化铜膜,并形成 在具有还原性的接合助剂至少存在于第一电极和第二电极的接合界面附近的状态下,通过进行超声波接合可以抑制在接合界面中的氧化物膜与超声波接合的实现。 可以在确保所需的接合强度的同时实现至少含有铜的金属之间的接合,并且可以降低安装半导体元件的半导体元件和制造基板的安装成本。
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