Abstract:
A method for exposing a microwire from it glass coating in a glass coated microwire. The method for exposing the microwire is facilitated by way of sufficiently bending the glass coated microwire to break the glass coating while maintaining the embedded microwire intact.
Abstract:
A packaged IC (110) including insulated wire (120) for electrically connecting conductive structures of the packaged IC. In some embodiments, the packaged IC includes an IC die (114) attached to a package substrate (112), where bond pads (118) of the IC die are electrically connected to bond fingers (116) of the substrate with insulated wire. The insulated wire has a conductive core (306) and an insulator coating (304). In some examples, the insulator coating includes an inorganic covalently-bonded substance that is not an oxide of the electrically conductive core such as, e.g., silicon nitride or silicon oxide. In one example, the insulator coating is applied to a conductive core by a chemical vapor deposition (CVD) process such as a plasma enhanced chemical vapor deposition (PECVD).
Abstract:
An electronic chip package comprises a semiconductor chip (110) with a first bond-pad (120) and is located on a carrier (130). A second bond-pad (140) is provided on the carrier (130) and the first bond-pad (120) is electrically connected to the second bond-pad (140) with a bond-wire, having a core (151) comprising a conductive material and a cladding (150) composed of an insulating material. A production method of the electronic chip package with the following steps: - placing of a semiconductor chip (110) comprising a first bond-pad (120) on top of a carrier (130) comprising a second bond-pad (140); - implementation of a wire bonding step between the two bond-pads; wherein the bond wire is first bonded to the second bond-pad (140) of the carrier (130) and then bonded to the first bond-pad (120) of the semiconductor chip (130).
Abstract:
A method of increasing the packaging density of input/output interconnections on a semiconductor chip (10) includes creating a plurality of terminal pads on a substrate of the chip (10), providing an array of a plurality of bonding pads (11) on the surface of such chip (10) and connecting the bonding pads (11) and the terminal pads by means of insulated bond wires (13). The bonding pads are not limited to the periphery of the chip. The connections for the bond wires (13) are preferably made using the ball bonding process. Preferably, the bond wires (13) are made of aluminum and are coated with an aluminum oxide insulation (14).