Abstract:
An electrical connection for connecting a bond pad of a first device and a bond pad of a second device with an insulated or coated wire. The electrical connection includes a first wirebond securing a first portion of the insulated bond wire to the first device bond pad. A second wirebond secures a second portion of the insulated bond wire to the second device bond pad. A bump is formed over the second wirebond, and the bump is offset from the second wirebond. The offset bump enhances the second bond, providing it with increased wire peel strength.
Abstract:
A wire bonding machine is provided. The wire bonding machine includes a bonding tool and an electrode for forming a free air ball on an end of a wire extending through the bonding tool where the free air ball is formed at a free air ball formation area of the wire bonding machine. The wire bonding machine also includes a bond site area for holding a semiconductor device during a wire bonding operation. The wire bonding machine also includes a gas delivery mechanism configured to provide a cover gas to: (1) the bond site area whereby the cover gas is ejected through at least one aperture of the gas delivery mechanism to the bond site area, and (2) the free air ball formation area.
Abstract:
A wire bonding machine is provided. The wire bonding machine includes a bonding tool and an electrode for forming a free air ball on an end of a wire extending through the bonding tool where the free air ball is formed at a free air ball formation area of the wire bonding machine. The wire bonding machine also includes a bond site area for holding a semiconductor device during a wire bonding operation. The wire bonding machine also includes a gas delivery mechanism configured to provide a cover gas to: (1) the bond site area whereby the cover gas is ejected through at least one aperture of the gas delivery mechanism to the bond site area, and (2) the free air ball formation area.
Abstract:
A method is provided for low loop wire bonding. The method includes forming a first bond between a first bonding ball (122) disposed at an end of a first wire (120) and a bond pad (22) of a die (20) coupled to a leadframe (110) having one or more leads (114). The method also includes forming a second bond (124) between a portion of the wire and a lead of the leadframe (114). The length of wire between the first and second bonds forms a loop in the wire having a first loop height (190). The method further includes disposing a second bonding ball (164) on top of the first bonding ball (122), a portion of the loop being compressed between the first and second bonding balls (122, 162). The compressed loop has a second loop height (195) less than the,,frst loop height (190). The method also includes forming a third bond between the second bonding ball (162), the wire (120), and the first bonding ball (122).
Abstract:
A wire bonding machine is provided. The wire bonding machine includes a bonding tool and an electrode for forming a free air ball on an end of a wire extending through the bonding tool where the free air ball is formed at a free air ball formation area of the wire bonding machine. The wire bonding machine also includes a bond site area for holding a semiconductor device during a wire bonding operation. The wire bonding machine also includes a gas delivery mechanism configured to provide a cover gas to: (1) the bond site area whereby the cover gas is ejected through at least one aperture of the gas delivery mechanism to the bond site area, and (2) the free air ball formation area.
Abstract:
A method for fabricating a semiconductor component (86) with a through wire interconnect (102) includes the step of providing a substrate (54) having a circuit side (62), a back side (64), and a through via (76). The method also includes the steps of: threading a wire (14) through the via (76), forming a contact (90) on the wire (14) on the back side (64), forming a bonded contact (92) on the wire (14) on the circuit side (62), and then severing the wire (14) from the bonded contact (92). The through wire interconnect includes (102) the wire (14) in the via (76), the contact (90) on the back side (64) and the bonded contact (92) on the circuit side (62). The contact (90) on the back side (64), and the bonded contact (92) on the circuit side (62), permit multiple components (86-1, 86-2, 86-3) to be stacked with electrical connections (170) between adjacent components. A system (120) for performing the method includes the substrate (54) with the via (76), and a wire bonder (10) having a bonding capillary (12) configured to thread the wire (14) through the via (76), and form the contact (90) and the bonded contact (92). The semiconductor component (86) can be used to form chip scale components, wafer scale components, stacked components (146), or interconnect components (861) for electrically engaging or testing other semiconductor components (156).
Abstract:
The invention relates to a method for producing an electrical connection between a first and a second contact surface, wherein a contact wire (24) is arranged between both contact surfaces using a cable bonding device (18). Initially, the contact wire (24) contacts the first contact surface (10) and then the second contact surface (12). Subsequently, the contact wire (24) is separated by means of the cable bonding device (18). According to the invention, a contact metalization (42) consisting of the material used for the contact wire is produced on the second contact surface (12) before contacting the first contact surface (10) by means of the cable bonding device (18).