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    PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER
    3.
    发明公开
    PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER 有权
    美国麻省理工学院麻省理工学院麻省理工学院

    公开(公告)号：EP2880693A4

    公开(公告)日：2016-06-01

    申请号：EP13825872

    申请日：2013-07-29

    申请人： KLA TENCOR CORP

    发明人： CHUANG YUNG-HO ALEX ,  FIELDEN JOHN

    IPC分类号： H01L31/10 ,  G01N21/95 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/148

    CPC分类号： H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

    摘要： A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    摘要翻译： 在具有相对的照明​​（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如1-5nm）的硼层直接设置在输出表面上。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成可选的抗反射材料层以增强光子进入硅衬底。 在相对的照明​​（顶部）和输出（底部）表面之间产生可选的外部电位。 光电阴极形成新型电子轰击电荷耦合器件（EBCCD）传感器和检测系统的一部分。

    ALLEVIATION OF LASER-INDUCED DAMAGE IN OPTICAL MATERIALS BY SUPPRESSION OF TRANSIENT COLOR CENTERS FORMATION AND CONTROL OF PHONON POPULATION
    5.
    发明公开
    ALLEVIATION OF LASER-INDUCED DAMAGE IN OPTICAL MATERIALS BY SUPPRESSION OF TRANSIENT COLOR CENTERS FORMATION AND CONTROL OF PHONON POPULATION 审中-公开
    利用激光救济带来了光学材料用过渡中心的形成和颜色的伤害减少用于控制声子群

    公开(公告)号：EP2522056A4

    公开(公告)日：2013-09-25

    申请号：EP11732035

    申请日：2011-01-03

    申请人： KLA TENCOR CORP

    发明人： DRIBINSKI VLADIMIR ,  CHUANG YUNG-HO ALEX

    IPC分类号： H01S3/10 ,  H01S3/113

    CPC分类号： H01S3/10 ,  G02F1/3525 ,  H01S3/005 ,  H01S3/091

    摘要： Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam.