公开(公告)号：EP1403926A2

公开(公告)日：2004-03-31

申请号：EP03021444.9

申请日：2003-09-23

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Nishijima, Masaaki ,  Tanaka, Tsuyoshi ,  Ueda, Daisuke

IPC分类号： H01L23/66 ,  H01L23/31

CPC分类号： H01L23/49861 ,  H01L23/057 ,  H01L23/481 ,  H01L23/49541 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01032 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor chip, a mold resin sealing the semiconductor chip, and a plurality of conductor leads extending from an inside of the mold resin to an outside thereof are provided. A portion of each conductor lead arranged inside the mold resin forms an internal terminal portion, and a portion thereof arranged outside the mold resin forms an external terminal portion. An electrode of the semiconductor chip and the internal terminal portion of the conductor lead are connected. The internal terminal portion of at least one of the conductor leads forms an inductance element portion, at least a part of which is narrower than the external terminal portion. An inductance element formed in a resin package has stable characteristics, and the stability of high-frequency characteristics improves.

摘要翻译： 提供半导体芯片，密封半导体芯片的模制树脂，以及从模制树脂的内部延伸到其外部的多个导体引线。 布置在模制树脂内部的每个导体引线的一部分形成内部端子部分，并且布置在模制树脂外部的部分形成外部端子部分。 半导体芯片的电极和导线的内部端子部分连接。 至少一个导体引线的内部端子部分形成电感元件部分，其至少一部分比外部端子部分窄。 形成在树脂封装中的电感元件具有稳定的特性，并且高频特性的稳定性提高。

公开(公告)号：EP1176640A3

公开(公告)日：2004-03-17

申请号：EP01000318.4

申请日：2001-07-27

申请人： Texas Instruments Incorporated

发明人： Efland, Taylor R ,  Pendharkar, Sameer

IPC分类号： H01L23/485 ,  H01L23/528

CPC分类号： H01L24/48 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/5286 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2924/20755 ,  H01L2924/00015 ,  H01L2924/2075

摘要： A semiconductor integrated circuit comprises contact pads located over active components, which are positioned to minimize the distance for power delivery between a selected pad and one or more corresponding active components, to which the power is to be delivered. This minimum distance further enhances dissipation of thermal energy released by the active components. More specifically, a semiconductor integrated circuit comprises a laterally organized power transistor, an array of power supply contact pads distributed over the transistor, means for providing a distributed, predominantly vertical current flow from the contact pads to the transistor, and means for connecting a power source to each of the contact pads. Positioning the power supply contact pads directly over the active power transistor further saves precious silicon real estate area. The means for vertical current flow include contact pads made of a stack of metal layers comprising refractory metals for adhesion, copper and nickel as stress-absorbing metals, and gold or palladium as bondable and solderable outermost metals. The means for connecting a power source include wire bonding and solder ball interconnection.

公开(公告)号：EP1376694A2

公开(公告)日：2004-01-02

申请号：EP03009006.2

申请日：2003-04-17

申请人： Sanyo Electric Co., Ltd.

发明人： Asano, Tetsuro ,  Sakakibara, Mikito

IPC分类号： H01L23/66

CPC分类号： H01L24/05 ,  H01L23/4824 ,  H01L23/552 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L27/0605 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/85201 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01037 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor switching circuit device includes a field effect transistor having a source (13), a gate electrode (17) and a drain electrode (15), a first electrode pad connected to the source electrode (13) or the drain electrode (15), and a second electrode pad connected to the source electrode (13) or the drain electrode (15) which is not connected to the first electrode pad (IN). The device also includes a third electrode pad receiving a DC voltage and applying the DC voltage to the field effect transistor, a first insulating layer (60) covering the field effect transistor, a metal layer (70) disposed above the first insulating layer (60) and connected to the third electrode pad, and a second insulating layer (80) disposed on the metal layer (70). The third electrode pad may be a control terminal pad, a ground terminal pad or a terminal pad receiving a constant DC power voltage. The metal layer (70) may be a flat sheet, a lattice or a comb-like structure.

公开(公告)号：EP1317701A1

公开(公告)日：2003-06-11

申请号：EP01967463.9

申请日：2001-09-10

申请人： STMicroelectronics S.A.

发明人： WUIDART, Sylvie

IPC分类号： G06F1/00 ,  G06K19/073

CPC分类号： H04K3/41 ,  G06F21/755 ,  G06K19/07363 ,  H01L23/585 ,  H01L24/06 ,  H01L2924/12035 ,  H01L2924/13091 ,  H01L2924/14 ,  H04K3/60 ,  H04K3/825 ,  H04K2203/20 ,  H01L2924/00

摘要： The invention concerns a method for jamming the power consumption of an integrated circuit (10), at least during the execution by the integrated circuit of a confidential operation (T2) which consists in scanning the confidential data (Ks) stored in the integrated circuit and/or calculating a cryptographic code. The invention is characterised in that it consists in activating a charge pump (PMP) so as to generate on the power supply line of the integrated circuit power consumption fluctuations (Icc2) of sufficient intensity to mask the variations on power consumption related to the execution of the confidential operation.

公开(公告)号：EP0907207B1

公开(公告)日：2003-04-23

申请号：EP98116111.0

申请日：1998-08-26

申请人： NEC CORPORATION

发明人： Takamori, Kazuo NEC IC Microcomputer Systems, Ltd.

IPC分类号： H01L23/485 ,  H01L21/60 ,  H01L21/66

CPC分类号： H01L24/05 ,  H01L24/06 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06153 ,  H01L2224/4943 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014

公开(公告)号：EP1273039A1

公开(公告)日：2003-01-08

申请号：EP01924799.8

申请日：2001-04-06

申请人： SILICONIX INCORPORATED

发明人： Kasem, Mohammed Y. ,  Ho, Yueh-Se ,  Lee, Shawn Luo ,  Chen, Chang-Sheng ,  Tjhia, Eddy ,  Lan, Bosco ,  Korec, Jacek ,  Bhalla, Anup

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/4824 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/6835 ,  H01L2223/5448 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

摘要： In a semiconductor package for a chip having terminals on both sides, for example, a power MOSFET in which the gate and source terminals are on the front side and the drain terminal is on the back side, electrical contact is made with the back side terminal by extending vias, which can take the form of trenches, holes or other cavities, either entirely or patrially through the chip. The vias are filled with a metal or other electrically conductive material. The process is performed on the chips in a wafer simultaneously. The resulting package is compact and economical to manufacture and can readily be mounted, flip-chip style, on a printed circuit board.

公开(公告)号：EP0859411B1

公开(公告)日：2002-05-15

申请号：EP97121955.5

申请日：1997-12-12

申请人： Oki Electric Industry Co., Ltd.

发明人： Yamaguchi, Tadashi

IPC分类号： H01L23/498

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

公开(公告)号：EP0981160A3

公开(公告)日：2002-03-27

申请号：EP99115541.7

申请日：1999-08-02

申请人： Infineon Technologies AG

发明人： Buck, Martin

IPC分类号： H01L23/495 ,  H01L23/64

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/647 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/45099 ,  H01L2924/00

摘要： An den Zuleitungen (Z) eines integrierten Halbleiterchips, die eine Verbindung zu externen Anschlüssen einer Versorgungsspannung herstellen, können durch hoch getaktete Stromimpulse Potentialschwankungen bis hin zu Resonanzschwingungen an einem internen Anschluß der jeweiligen Zuleitung (Z) angeregt werden. Zur Dämpfung dieser Potentialschwankungen wird für eine oder mehrere Zuleitungen (Z) ein Widerstandswert (R D ) vorgegeben, der groß genug ist, diese Potentialschwankungen zu dämpfen, jedoch klein genug ist, um auf der jeweiligen Zuleitung (Z) nur einen vorgegebenen maximal zulässigen Spannungsabfall zu verursachen. Der jeweilige Widerstand (R D ) kann durch Verwendung eines Materials mit einem entsprechenden spezifischen Widerstand oder durch Verkleinerung des Leiterquerschnitts (q) mit einer Einkerbung (K) entlang der Zuleitung (Z) erzielt werden.

摘要翻译： 集成半导体芯片具有一个或多个引线（Z）到电源电压的一个或多个外部端子。 引线（Z）中的至少一个具有足够大的电阻值，以抑制由引线（Z）上的电流脉冲引起的引线（Z）的内部端子（C）处的电压波动。 电阻值足够小，只能在最大电流（Imax）下引起相应引线（Z）上给定的最大允许电压降。 使各引线（Z）的电阻值（Rd）使得相应引线（Z）可以由具有相应电阻率的材料制成。

公开(公告)号：EP1176640A2

公开(公告)日：2002-01-30

申请号：EP01000318.4

申请日：2001-07-27

申请人： Texas Instruments Incorporated

发明人： Efland, Taylor R ,  Pendharkar, Sameer

IPC分类号： H01L23/485

CPC分类号： H01L24/48 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/5286 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2924/20755 ,  H01L2924/00015 ,  H01L2924/2075

摘要： A semiconductor integrated circuit comprises contact pads located over active components, which are positioned to minimize the distance for power delivery between a selected pad and one or more corresponding active components, to which the power is to be delivered. This minimum distance further enhances dissipation of thermal energy released by the active components.
More specifically, a semiconductor integrated circuit comprises a laterally organized power transistor, an array of power supply contact pads distributed over the transistor, means for providing a distributed, predominantly vertical current flow from the contact pads to the transistor, and means for connecting a power source to each of the contact pads. Positioning the power supply contact pads directly over the active power transistor further saves precious silicon real estate area. The means for vertical current flow include contact pads made of a stack of metal layers comprising refractory metals for adhesion, copper and nickel as stress-absorbing metals, and gold or palladium as bondable and solderable outermost metals. The means for connecting a power source include wire bonding and solder ball interconnection.

摘要翻译： 半导体集成电路包括位于有源部件上方的接触焊盘，其被定位成使得所选择的焊盘与要传送电力的一个或多个相应的有源部件之间的功率传递的距离最小化。 该最小距离进一步增强了由有源部件释放的热能的耗散。 更具体地，半导体集成电路包括横向组织的功率晶体管，分布在晶体管上的电源接触焊盘的阵列，用于提供从接触焊盘到晶体管的分布式主要垂直电流的装置，以及用于连接功率的装置 源到每个接触垫。 将电源接触焊盘直接定位在有源功率晶体管上，进一步节省了宝贵的硅片面积。 用于垂直电流的装置包括由堆叠的金属层构成的接触垫，包括用于粘合的难熔金属，作为应力吸收金属的铜和镍，以及作为可焊接和可焊接的最外金属的金或钯。 用于连接电源的装置包括引线接合和焊球互连。

公开(公告)号：EP1057650A4

公开(公告)日：2001-11-14

申请号：EP99959934

申请日：1999-12-21

申请人： ROHM CO LTD

发明人： NAGAHATA TAKAYA ,  NISHI KOJI ,  YOSHIKAWA YASUHIRO

IPC分类号： B41J2/345

CPC分类号： B41J2/345 ,  H01L24/06 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/06179 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A driver IC chip (A) has a principal surface (10), in one corner area (11a) of which are provided first and second pads (3a, 3b) whose centers (Oa, Ob) are deviated from each other in the x and y directions. Since two wires can be extended from the first and second pads (3a, 3b), respectively, in any directions of x and y without bringing the wires close to each other, the short circuit between the wires is prevented.