CERAMIC VIA SUBSTRATE, METALLIZED CERAMIC VIA SUBSTRATE, AND METHOD FOR MANUFACTURING BOTH
    58.
    发明公开
    CERAMIC VIA SUBSTRATE, METALLIZED CERAMIC VIA SUBSTRATE, AND METHOD FOR MANUFACTURING BOTH 审中-公开
    KERAMIKDURCHGANGSSUBSTRAT,METALLISIERTES KERAMIKDURCHGANGSSUBSTRAT UND VERFAHREN ZUR HERSTELLUNG VON BEIDEM

    公开(公告)号:EP2654077A1

    公开(公告)日:2013-10-23

    申请号:EP11849004.4

    申请日:2011-12-02

    摘要: A via-holed ceramic substrate can be manufactured in a simple method by providing a via-holed ceramic substrate comprising: a sintered ceramic substrate; an electroconductive via formed in the sintered ceramic substrate, the electroconductive via having an electroconductive metal closely filled in a through-hole, the electroconductive metal containing a metal (A) having a melting point of 600°C to 1100°C, a metal (B) having a melting point higher than the melting point of the metal (A), and an active metal; and an active layer formed in the interface between the electroconductive via and the sintered ceramic substrate.

    摘要翻译: 通孔孔陶瓷基板可以通过提供通孔孔陶瓷基板以简单的方法制造,其包括:烧结陶瓷基板; 形成在烧结陶瓷衬底中的导电通孔,导电通孔具有紧密填充在通孔中的导电金属,导电金属含有熔点为600℃至1100℃的金属(A),金属( B)具有高于金属(A)的熔点的熔点和活性金属; 以及形成在导电通孔和烧结陶瓷基板之间的界面中的有源层。