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    Semiconductor substrate of high reliability
    68.
    发明公开
    Semiconductor substrate of high reliability 失效
    Halbleitersubstrate von hoher Zuverlassigkeit

    公开(公告)号：EP1453089A3

    公开(公告)日：2004-09-08

    申请号：EP04012282.2

    申请日：1997-08-27

    申请人： Dowa Mining Co., Ltd.

    发明人： Sakuraba, Masami, c/o Dowa Mining co., Ltd. ,  Kimura, Masami, c/o Dowa Mining Co., Ltd. ,  Nakamura, Junji, c/o Dowa Mining Co., Ltd. ,  Takahara, Masaya, c/o Dowa Mining Co., Ltd.

    IPC分类号： H01L23/15 ,  H01L23/373 ,  H05K1/02

    CPC分类号： H01L23/3735 ,  C04B37/026 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/407 ,  C04B2237/70 ,  H01L23/13 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/0271 ,  H05K1/0306 ,  H05K3/38 ,  H05K2201/0355 ,  H05K2201/09145 ,  H05K2201/098 ,  H05K2201/09845 ,  H01L2924/00

    摘要： A paste of active metallic brazing material (2) is applied to the entire surface of each side of aluminum nitride or alumina ceramic substrate (1); circuit forming copper plate (3) having a thickness of 0.3 mm is placed in contact with one surface of the substrate and a heat dissipating copper plate (4) having a thickness of 0.25 mm placed in contact with the other surface; the individual members are compressed together and heated at 850°C in a vacuum furnace to form a joint; an etching resist is applied to the circuit forming copper plate and etching is performed with an iron chloride solution to form a circuit pattern and the unwanted brazing material (2) is removed from the marginal portions; a second resist layer is applied and etched with an iron chloride solution to form a second marginal step; a third resist layer is similarly applied and etched to form a third marginal step; the completed circuit board having three marginal steps of which the lowest one is solely or partly made of the brazing material (2) can withstand 1,500 heat cycles, which is the result that has been unattainable by the prior art. Having such high heat cycle characteristics, the circuit board is suitable for use as semiconductor substrate in automobiles, electric trains and other applications that require high output power.

    摘要翻译： 在氮化铝或氧化铝陶瓷基板（1）的每一侧的整个表面上施加活性金属钎料（2）的糊料。 与厚度为0.3mm的电路形成铜板（3）放置成与基板的一个表面接触，并且将厚度为0.25mm的散热铜板（4）放置成与另一个表面接触; 各个构件压缩在一起，在真空炉中在850℃下加热形成接头; 将抗蚀剂施加到形成铜电路的电路上，用氯化铁溶液进行蚀刻以形成电路图案，并且从边缘部分去除不需要的钎焊材料（2）; 施加第二抗蚀剂层并用氯化铁溶液蚀刻以形成第二边缘步骤; 类似地施加和蚀刻第三抗蚀剂层以形成第三边缘步骤; 完整的电路板具有三个边缘步骤，其中最低的一个仅由或部分由钎焊材料（2）制成，可承受1500次热循环，这是现有技术无法实现的结果。 具有这样高的热循环特性，电路板适用于需要高输出功率的汽车，电动列车和其他应用中的半导体衬底。