公开(公告)号：EP3285294A1

公开(公告)日：2018-02-21

申请号：EP17185777.4

申请日：2017-08-10

申请人： EM Microelectronic-Marin SA

发明人： Kuratli, Christoph ,  Dupraz, Yves

IPC分类号： H01L23/485 ,  H01L23/544 ,  H01L23/528

CPC分类号： H01L24/09 ,  G01R31/31715 ,  G01R31/31937 ,  H01L22/32 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/528 ,  H01L23/5286 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05015 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06167 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2924/014

摘要： The invention relates to an electronic system comprising:
- an integrated circuit die (10') having:
• at least 2 bond pads (20, 37)
• a redistribution layer, said redistribution layer having:
- at least a solder pad (19') comprising 2 portions (33, 34) arranged to enable an electrical connection between each other by a same solder ball placed on said solder pad (19'), but electrically isolated of each other in the absence of a solder ball on the solder pad (19')
- at least 2 redistribution wires (22, 23, 39), each one connecting one of the 2 portions (33, 34) to one of the 2 bond pads (20, 37),

a second bond pad (37) connected via a second redistribution wire (39) to a second portion (34) of the solder pad (19') being dedicated to testing said integrated circuit die (10')
- a grounded printed circuit board track (24), a solder ball (35) being placed between the solder pad (19') and the printed circuit board track (24).

摘要翻译： 本发明涉及一种电子系统，包括： - 集成电路管芯（10'），其具有：·至少2个接合焊盘（20,37）·重新分布层，所述重新分布层具有： - 至少一个焊盘（19' ）包括布置成通过放置在所述焊盘（19'）上的相同焊球实现彼此之间的电连接的两个部分（33,34），但是在焊盘上没有焊球的情况下彼此电隔离 （19）; - 至少两个再分配线（22,23,39），每个再分配线将两个部分（33,34）中的一个连接到2个键合焊盘（20,37）中的一个，第二键合焊盘（37 ）经由第二再分布线（39）连接到专用于测试所述集成电路管芯（10'）的焊盘（19'）的第二部分（34） - 接地印刷电路板轨道（24），焊料 球（35）放置在焊料垫（19'）和印刷电路板轨道（24）之间。

公开(公告)号：EP2812353B1

公开(公告)日：2017-01-18

申请号：EP13702812.2

申请日：2013-02-07

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： GABRIEL, Jean-Christophe ,  BLANCHOIN, Laurent ,  THERY, Manuel ,  GALLAND, Rémi

IPC分类号： C07K14/47 ,  G01N33/50 ,  B82Y15/00 ,  B82Y30/00 ,  H01L21/00

CPC分类号： H01L24/64 ,  B29C41/003 ,  B82B3/0019 ,  B82B3/0052 ,  B82Y5/00 ,  B82Y15/00 ,  B82Y40/00 ,  C07K14/4716 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/70 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11524 ,  H01L2224/13018 ,  H01L2224/13193 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/1366 ,  H01L2224/13693 ,  H01L2224/14051 ,  H01L2224/16059 ,  H01L2224/16105 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16137 ,  H01L2224/16145 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/82101 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2924/0695 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

公开(公告)号：EP2783393A4

公开(公告)日：2016-03-23

申请号：EP12792149

申请日：2012-06-01

申请人： TEXAS INSTRUMENTS INC

发明人： WEST JEFFREY ALAN

IPC分类号： H01L21/60 ,  H01L21/98 ,  H01L23/48 ,  H01L23/485 ,  H01L25/065

CPC分类号： H01L23/538 ,  H01L21/563 ,  H01L23/481 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13673 ,  H01L2224/13681 ,  H01L2224/14181 ,  H01L2224/1613 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81005 ,  H01L2224/81007 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01074

公开(公告)号：EP2854167A1

公开(公告)日：2015-04-01

申请号：EP14176547.9

申请日：2011-11-23

申请人： ams AG

发明人： Cassidy, Cathal ,  Schrems, Martin ,  Schrank, Franz

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L25/065 ,  H01L23/552

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/552 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10125 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/30101 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas and forms an annular cavity surrounding a pillar (105). A solder ball (100) closes the void without completely filling it. A variety of interconnections for threedimensional integration is offered by this scheme.

摘要翻译： 该半导体器件包括具有位于的前侧（20），一个基片的金属化（111），其具有上部端子层（22）的半导体基板（10）。 金属化形成通孔从上部终端层，以相对位于前侧处的基板的后侧（21）的后部终端层（13）的基板（23）。 经由包括贯通基板哪个可填充有空气或另一气体和周围的一个支柱（105）的环形腔设计的形式的空隙（101）。 焊球（100）关闭的空隙而不完全填充呼叫它。 各种互连的三维集成是通过该方案提供的。

公开(公告)号：EP2597677A1

公开(公告)日：2013-05-29

申请号：EP11190389.4

申请日：2011-11-23

申请人： austriamicrosystems AG

发明人： Cassidy, Cathal ,  Schrems, Martin ,  Schrank, Franz

IPC分类号： H01L23/48 ,  H01L25/065

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/552 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10125 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/30101 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for threedimensional integration is offered by this scheme.

公开(公告)号：EP2594928B1

公开(公告)日：2016-04-27

申请号：EP12007744.1

申请日：2012-11-15

申请人： Micronas GmbH

发明人： Wilbertz, Christoph ,  Kolleth, Tobias ,  Frerichs, Heinz-Peter

IPC分类号： G01N27/414 ,  H01L23/485 ,  H01L21/56 ,  H01L25/00 ,  H01L23/482

CPC分类号： H01L29/66 ,  G01N27/4143 ,  G01N27/4148 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05017 ,  H01L2224/05138 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05638 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/05687 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/1613 ,  H01L2224/16145 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/26145 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32058 ,  H01L2224/32112 ,  H01L2224/3213 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8185 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/01014 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：EP2812353A1

公开(公告)日：2014-12-17

申请号：EP13702812.2

申请日：2013-02-07

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： GABRIEL, Jean-Christophe ,  BLANCHOIN, Laurent ,  THERY, Manuel ,  GALLAND, Rémi

IPC分类号： C07K14/47 ,  G01N33/50 ,  B82Y15/00 ,  B82Y30/00 ,  H01L21/00

CPC分类号： H01L24/64 ,  B29C41/003 ,  B82B3/0019 ,  B82B3/0052 ,  B82Y5/00 ,  B82Y15/00 ,  B82Y40/00 ,  C07K14/4716 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/70 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/11524 ,  H01L2224/13018 ,  H01L2224/13193 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/1366 ,  H01L2224/13693 ,  H01L2224/14051 ,  H01L2224/16059 ,  H01L2224/16105 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16137 ,  H01L2224/16145 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/82101 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2924/0695 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention relates to a method for preparing three-dimensional actin structures having a well-defined shape and displaying improve mechanical rigidity. This method comprises the steps of (a) providing a polymerization solution comprising actin monomers, a branching agent and a capping agent, (b) providing at least one surface having thereon a pattern which is coated with a nucleating agent, and (c) contacting the at least one surface of step (b) with the polymerization solution of step (a) so as to induce the polymerization of actin and obtain the said desired three-dimensional actin structure. Applications of the present invention in various technological fields such as microelectronics are also provided.

摘要翻译： 本发明涉及一种制备具有良好定义形状并显示出提高机械刚度的三维肌动蛋白结构的方法。 该方法包括以下步骤：（a）提供包含肌动蛋白单体，支化剂和封端剂的聚合溶液，（b）提供至少一个表面，其上涂有成核剂的图案，和（c） 步骤（b）的至少一个表面与步骤（a）的聚合溶液引发肌动蛋白的聚合并获得所需的三维肌动蛋白结构。 还提供了本发明在各种技术领域如微电子学中的应用。

公开(公告)号：EP2783393A2

公开(公告)日：2014-10-01

申请号：EP12792149.2

申请日：2012-06-01

申请人： Texas Instruments Incorporated

发明人： WEST, Jeffrey, Alan

IPC分类号： H01L21/768 ,  H01L21/60 ,  H01L23/48

CPC分类号： H01L23/538 ,  H01L21/563 ,  H01L23/481 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13673 ,  H01L2224/13681 ,  H01L2224/14181 ,  H01L2224/1613 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81005 ,  H01L2224/81007 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01074

摘要： A method (100) of protecting through-substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside (101). A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips (102). The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head (104). The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.

公开(公告)号：EP3146561A2

公开(公告)日：2017-03-29

申请号：EP15725962.3

申请日：2015-05-18

申请人： Microchip Technology Incorporated

发明人： DIX, Greg ,  MELCHER, Roger ,  KLINE, Harold

IPC分类号： H01L23/485 ,  H01L23/528 ,  H01L23/482 ,  H01L23/495

CPC分类号： H01L23/49513 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/4824 ,  H01L23/4951 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/528 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/14133 ,  H01L2224/1613 ,  H01L2224/16245 ,  H01L2224/48245 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor power chip has a semiconductor power device formed on a semiconductor die; wherein the semiconductor power device comprises an array of conductive contact elements; a passivation layer formed over the plurality of conductive contact elements, the passivation layer comprising passivation openings over a plurality of the conductive contact elements; and an array of conductive bumps including one or more interconnection bumps, wherein each interconnection bump is formed over the passivation layer and extends into at least two of the passivation openings and into contact with at least two underlying conductive contact elements to thereby provide a conductive coupling between the at least two underlying conductive contact elements.

摘要翻译： 半导体功率芯片具有形成在半导体晶片上的半导体功率器件; 其中所述半导体功率器件包括导电接触元件阵列; 形成在所述多个导电接触元件上的钝化层，所述钝化层包括多个所述导电接触元件上的钝化开口; 以及包括一个或多个互连凸块的导电凸块阵列，其中每个互连凸块形成在钝化层之上并且延伸到至少两个钝化开口中并与至少两个下面的导电接触元件接触，从而提供导电耦合 在所述至少两个下面的导电接触元件之间。

公开(公告)号：EP2854167B1

公开(公告)日：2016-01-20

申请号：EP14176547.9

申请日：2011-11-23

申请人： ams AG

发明人： Cassidy, Cathal ,  Schrems, Martin ,  Schrank, Franz

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L25/065 ,  H01L23/552

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/53295 ,  H01L23/552 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10125 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16106 ,  H01L2224/1613 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/30101 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for threedimensional integration is offered by this scheme.

摘要翻译： 该半导体器件包括具有位于的前侧（20），一个基片的金属化（111），其具有上部端子层（22）的半导体基板（10）。 金属化形成通孔从上部终端层，以相对位于前侧处的基板的后侧（21）的后部终端层（13）的基板（23）。 经由包括贯通基板哪个可填充有空气或其它气体的空隙（101）。 焊球（100）关闭的空隙而不完全填充呼叫它。 各种互连的三维集成是通过该方案提供的。