公开(公告)号：JP2018073943A

公开(公告)日：2018-05-10

申请号：JP2016210773

申请日：2016-10-27

申请人： 住友電気工業株式会社

发明人： 児山 浩一 ,  古谷 章

IPC分类号： H01S5/022

CPC分类号： H01L33/483 ,  H01L24/48 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/48245 ,  H01L2224/48249 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/16251 ,  H01L2924/163 ,  H01L2924/19107 ,  H01L2224/45099

摘要： 【課題】キャップ下端を主面の主面の外縁に近づけることを可能な半導体発光装置を提供する。 【解決手段】半導体発光装置は、第1面、第2面、及び第1面から前記第2面への第1方向に延在する開口を有するインナー部分、並びに前記インナー部分の外周に設けられたアウター部分を含むステムベースと、開口において支持されたリード部材と、インナー部分を囲むようにアウター部分の上面に設けられた閉じた形状の金属部材とを備えるステム部品と、ステム部品のインナー部分上に設けられた半導体光素子と、ステム部品の金属部材上に設けられたキャップと、を備え、インナー部分及びアウター部分は、第1方向に交差する基準面に沿って配置され、金属部材は、アウター部分の上面によって支持された第1部分と、アウター部分の縁より外側に延出する第2部分とを有する。 【選択図】図1

公开(公告)号：JP2010205891A

公开(公告)日：2010-09-16

申请号：JP2009049202

申请日：2009-03-03

申请人： Rohm Co Ltd ,  ローム株式会社

发明人： NAKAHARA TAKESHI ,  YUJI HIROYUKI

IPC分类号： H01L21/60 ,  H01L31/02

CPC分类号： H01L24/05 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/48 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13064 ,  H01L2224/05556 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device enabling occurrence of peeling of an electrode to be hardly caused regardless of wire bonding junction performed on the electrode electrically connected with the external part of an element. SOLUTION: An organic substance electrode 2 is formed on a ZnO-based semiconductor 1, a wire bonding electrode 3 is formed on the organic substance electrode 2, and a pedestal constituted of an insulating film 4 is disposed in a region which is situated under the wire bonding electrode 3 and defines a part of a region on the ZnO-based semiconductor 1 to prevent peeling of the wire bonding electrode 3. COPYRIGHT: (C)2010,JPO&INPIT

摘要翻译： 要解决的问题：提供一种半导体器件，无论在与元件的外部部分电连接的电极上执行的引线接合点，几乎不会引起电极的剥离。 解决方案：在ZnO基半导体1上形成有机物质电极2，在有机物质电极2上形成引线接合电极3，在绝缘膜4的基板 位于引线接合电极3的下方，并且限定ZnO基半导体1上的一部分区域，以防止引线接合电极3的剥离。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010034287A

公开(公告)日：2010-02-12

申请号：JP2008194827

申请日：2008-07-29

申请人： Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

发明人： NISHIYAMA NAOKI

IPC分类号： H01L31/0232

CPC分类号： H01L31/0203 ,  H01L33/483 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2924/3025 ,  H01S5/02212 ,  H01S5/02288 ,  Y10T428/12354 ,  H01L2924/00014 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide a cap which has a projection for resistance welding and is resistance-welded to a stem to become a can package, and in which a fused part is prevented from scattering or spreading into an element mounting space of the can package during the resistance welding at inexpensively. SOLUTION: The cap 4 has the cylindrical body portion B of a cap shell 4b which has a condenser lens 4a and where the condenser lens 4a is fixed, and the flange portion F of the cap shell 4b provided to the end of the body portion B on the opposite side from the condenser lens 4a and welded to the stem. The flange portion F has the annular projection F1 for resistance welding to the stem, and an annular groove F2, recessed to the opposite side to the projection direction of the projection F1, on the inner peripheral side of the projection F1, the projection F1 and annular groove F2 being formed concentrically by pressing. COPYRIGHT: (C)2010,JPO&INPIT

摘要翻译： 要解决的问题：提供一种具有用于电阻焊接的突起的盖，并且被电阻焊到杆上以成为罐包装，并且其中防止熔融部分散射或扩散到元件安装空间 的电阻焊接期间的罐包装。 解决方案：盖4具有盖壳4b的圆柱形主体部分B，其具有聚光透镜4a，并且聚光透镜4a固定，盖壳4b的凸缘部分F设置在 主体部分B在与聚光透镜4a相反的一侧并焊接到杆上。 凸缘部分F具有用于电阻焊接到杆上的环形突起F1和在突起F1的内周侧上与突起F1的突出方向相反的一侧凹入的环形槽F2，突起F1和 环形槽F2通过按压同心地形成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP4317550B2

公开(公告)日：2009-08-19

申请号：JP2005513297

申请日：2004-08-19

申请人： 関西電力株式会社

发明人： 良孝 菅原

IPC分类号： H01L23/34 ,  H01L29/20 ,  H01L29/24 ,  H01L29/74 ,  H01L29/744 ,  H01L29/861 ,  H01L31/12

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

公开(公告)号：JP2009099645A

公开(公告)日：2009-05-07

申请号：JP2007267473

申请日：2007-10-15

申请人： Fuji Electric Device Technology Co Ltd ,  富士電機デバイステクノロジー株式会社

发明人： SOYANO SHIN

IPC分类号： H01L25/07 ,  H01L25/18

CPC分类号： H01L25/162 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K7/1432 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a plurality of control boards differing in area, or the plurality of control boards and a resin case cover can be aligned together at a time, and which has a compact shape. SOLUTION: The semiconductor device 1 has semiconductor elements 30 and 31 mounted on an insulating board 20 and housed in a resin case 40, and a pin 60 is stood at any place in the resin case 40. Further, a printed board 70 is disposed inside or outside the resin case 40. Then the printed boards 70 and a cover 40b of the resin case 40 are positioned with the common pin 60. Consequently, the printed boards 70 and the cover 40b of the resin case 40 can be aligned together at a time. COPYRIGHT: (C)2009,JPO&INPIT

摘要翻译： 要解决的问题：为了提供一种半导体器件，其中多个控制板的面积不同，或者多个控制板和树脂壳体盖可以一次排列在一起，并且具有紧凑的形状。 解决方案：半导体器件1具有安装在绝缘板20上并容纳在树脂壳体40中的半导体元件30和31，并且销60位于树脂壳体40中的任何位置。此外，印刷板70 设置在树脂外壳40的内部或外部。然后，印刷板70和树脂外壳40的盖40b与公共销60定位。因此，树脂外壳40的印刷板70和盖40b可以对齐 一次在一起 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008294452A

公开(公告)日：2008-12-04

申请号：JP2008153030

申请日：2008-06-11

申请人： Kansai Electric Power Co Inc:The ,  関西電力株式会社

发明人： SUGAWARA YOSHITAKA

IPC分类号： H01L23/34 ,  H01L25/07 ,  H01L25/18 ,  H01L29/20 ,  H01L29/24 ,  H01L29/74 ,  H01L29/744 ,  H01L29/861

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device having a large controllable current and low loss. SOLUTION: The semiconductor device comprises a wide-gap bipolar semiconductor device 13 which uses a wide-gap semiconductor and has built-in voltage in the forward characteristics, semiconductor packages 10, 14 which house the wide-gap bipolar semiconductor device 13 and have electric connecting means 7, 8, 9, 11 for connecting the wide-gap bipolar semiconductor device 13 to an external device, and a heating means 15 for heating the wide-gap bipolar semiconductor device 13 within the semiconductor packages 10, 14 to a temperature range of from 50°C to 750°C. COPYRIGHT: (C)2009,JPO&INPIT

摘要翻译： 要解决的问题：提供具有大的可控电流和低损耗的功率半导体器件。 解决方案：半导体器件包括使用宽间隙半导体并具有正向特性的内置电压的宽间隙双极性半导体器件13，其容纳宽间隙双极半导体器件13的半导体封装10,14 并且具有用于将宽间隙双极性半导体器件13连接到外部器件的电连接装置7,8,9,11以及用于将半导体封装10,14内的宽间隙双极半导体器件13加热到 温度范围为50°C至750°C。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP4165592B2

公开(公告)日：2008-10-15

申请号：JP2006220903

申请日：2006-08-14

申请人： 日亜化学工業株式会社

发明人： 良馬 末永

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62

CPC分类号： H01L2224/32245 ,  H01L2224/45 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：JP3891115B2

公开(公告)日：2007-03-14

申请号：JP2002586412

申请日：2002-04-16

申请人： 日亜化学工業株式会社

发明人： 良馬 末永

IPC分类号： H01L33/32 ,  H01L27/15 ,  H01L33/50 ,  H01L33/64

CPC分类号： H01L33/642 ,  H01L24/45 ,  H01L24/49 ,  H01L33/483 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device comprises a light emitting element, a metal package having a recess part for housing the light emitting element and a base part which has one or more through holes, and one or more lead electrode pins which penetrate the through holes and are separated from the through holes by an insulating member respectively. The bottom faces of the lead electrode pins project out from the bottom face of the base part and are positioned on a same plane including an outer bottom face of the recess part. With this configuration, the light emitting device has a good heat radiating characteristic and high mechanical strength.

公开(公告)号：JP3832360B2

公开(公告)日：2006-10-11

申请号：JP2002057338

申请日：2002-03-04

申请人： 株式会社デンソー

发明人： 和彦 古賀

IPC分类号： G01L9/00 ,  G06F1/16 ,  H01L29/84 ,  H01R13/504 ,  H01R13/533

CPC分类号： G01L19/0069 ,  G01L19/0084 ,  G01L19/141 ,  H01L24/45 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electronic device such as a semiconductor pressure sensor is provided which has a buffer disposed within a resinous casing. Terminals extend through the casing and connect electrically with an electronic element mounted on the casing through wires. The buffer is made of a material having a coefficient of thermal expansion smaller than that of the body of the casing, thereby decreasing undesirable movement of the terminals leading to fatigue of the wires which arises from a change in temperature of the casing. This minimizes a drop in mechanical strength of the wires caused by thermal cycling to which the casing is subjected.

摘要翻译： 提供了诸如半导体压力传感器的电子装置，其具有设置在树脂壳体内的缓冲器。 端子延伸穿过外壳并通过电线与安装在外壳上的电子元件电连接。 缓冲器由热膨胀系数小于壳体的热膨胀系数的材料制成，从而减少端子的不期望的运动，导致由壳体的温度变化引起的电线疲劳。 这最大限度地降低了由套管所经受的热循环引起的电线的机械强度的下降。

公开(公告)号：JP2006210829A

公开(公告)日：2006-08-10

申请号：JP2005023988

申请日：2005-01-31

申请人： Shin Etsu Handotai Co Ltd ,  信越半導体株式会社

发明人： IKEDA HITOSHI ,  OBARA MASAYOSHI

IPC分类号： H01L33/38 ,  H01L21/60 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L33/56 ,  H01L33/62

CPC分类号： H01L33/40 ,  B23K1/0016 ,  B23K35/001 ,  B23K35/262 ,  B23K35/3013 ,  B23K2201/40 ,  H01L24/31 ,  H01L24/45 ,  H01L24/48 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/29144 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide an element structure which is superior in the reliability of junction between an Au-Sn system solder layer and a joint alloy layer that make it difficult to generate peeling. SOLUTION: A second electrode 16 formed on a second main surface of a compound semiconductor layer 100 of a light-emitting element 1 is provided with a bond alloy layer 31 for reducing the bond resistance with the compound semiconductor layer 100, and a semiconductor layer 34 for connecting the joint metal layer to a conductive support body 52. The solder layer 34 is formed of an Sn system solder layer 34s, arranged at the joint alloy layer 31 side, and constituted of Sn system metal whose fusing point is lower than that of the joint alloy layer 31 with Sn as the main components and an Au-Sn system solder layer 34m, arranged so as to be brought into contact with the Sn system solder layer 34s on the side opposite to the bond alloy layer 31. Au of 30 mass% or higher and 90 mass% or lower and Sn of 10 mass% or higher and 70 mass% or lower are contained, the total content of Au and Sn is 80 mass% or higher, and the fusing point is higher than that of the Sn system solder layer 34s. COPYRIGHT: (C)2006,JPO&NCIPI

摘要翻译： 要解决的问题：提供一种Au-Sn系焊料层和接合合金层之间的连接可靠性优异的元件结构，使得难以产生剥离。 解决方案：形成在发光元件1的化合物半导体层100的第二主表面上的第二电极16设置有用于降低与化合物半导体层100的结合电阻的接合合金层31，以及 用于将接合金属层连接到导电支撑体52的半导体层34.焊料层34由配置在接合合金层31侧的Sn系焊料层34s形成，并且由熔点低的Sn系金属构成 与以Sn为主要成分的接合合金层31相比，Au-Sn系焊料层34m配置成与接合合金层31相反的一侧与Sn系焊料层34s接触。 含有30质量％以上且90质量％以下的Au和10质量％以上且70质量％以下的Sn，Au和Sn的总量为80质量％以上，熔点高 而不是Sn系焊料层34s。 版权所有（C）2006，JPO＆NCIPI