公开(公告)号：JP6339229B2

公开(公告)日：2018-06-06

申请号：JP2016562450

申请日：2014-12-03

申请人： インテル・コーポレーション

发明人： チャン、ピーター ,  メイベリー、マイケル

IPC分类号： H01L21/58 ,  H01L21/60

CPC分类号： H01L24/94 ,  H01L23/48 ,  H01L23/58 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/95 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32227 ,  H01L2224/80006 ,  H01L2224/81005 ,  H01L2224/8114 ,  H01L2224/81801 ,  H01L2224/8385 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2224/11 ,  H01L2924/01079 ,  H01L2924/0105 ,  H01L2224/81 ,  H01L2224/80 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/83

公开(公告)号：JP5827393B2

公开(公告)日：2015-12-02

申请号：JP2014260040

申请日：2014-12-24

申请人： ルネサスエレクトロニクス株式会社

发明人： 宮川 優一 ,  藤井 英樹 ,  古屋 賢二

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L21/768 ,  H01L23/522 ,  H01L25/00

CPC分类号： H01L24/97 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/10157 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815

公开(公告)号：JP2014075450A

公开(公告)日：2014-04-24

申请号：JP2012221656

申请日：2012-10-03

申请人： Nitto Denko Corp ,  日東電工株式会社

发明人： KATAYAMA HIROYUKI ,  KONDO TAKASHI ,  EBE YUKI ,  MITANI MUNEHISA

IPC分类号： H01L33/50

CPC分类号： H01L33/502 ,  B32B3/08 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B27/283 ,  B32B2307/306 ,  B32B2307/54 ,  B32B2457/00 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/06 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/54 ,  H01L2221/68331 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/005 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide a sealing sheet coated semiconductor element in which generation of voids in the sealing sheet is suppressed, and to provide a manufacturing method therefor, a semiconductor device including the sealing sheet coated semiconductor element and having excellent reliability, and a manufacturing method therefor.SOLUTION: A phosphor layer coated LED 10 includes an LED 4 having a back surface 22 in contact with a substrate 9, and a front surface 23 arranged on the other side in a front-back direction (front surface side) of the back surface 22, and a phosphor sheet 5 covering at least the front surface 23 of the LED 4. When projected from one side in the front-back direction to the other side, the phosphor sheet 5 includes an exposed surface 27 which is not included in the back surface 22 of the LED 4 but exposed from the back surface 22. The exposed surface 27 is a portion on the other side (front surface portion) located on the other side in the front-back direction (front surface side) of the back surface 22 of the LED 4.

摘要翻译： 要解决的问题：为了提供一种密封片中的空隙的产生被抑制的密封片涂覆的半导体元件，并且为了提供其制造方法，包括具有优异可靠性的密封片被覆半导体元件的半导体器件，以及 其制造方法为：涂布荧光体层的LED10包括具有与基板9接触的背面22的LED 4和配置在基板9的前后方向（前面侧）的另一侧的前面23 后表面22和至少覆盖LED 4的前表面23的荧光体片5.当从前后方向的一侧向另一侧突出时，荧光体片5包括不暴露的表面27 包括在LED 4的后表面22中，但是从后表面22露出。暴露表面27是位于前后面d另一侧的另一侧（前表面部分）上的部分 LED 4的后表面22的方向（前表面侧）。

公开(公告)号：JP5388673B2

公开(公告)日：2014-01-15

申请号：JP2009104586

申请日：2009-04-23

申请人： パナソニック株式会社

发明人： 誠 今西 ,  善広 戸村 ,  謙太郎 熊澤

IPC分类号： H01L21/60 ,  H01L21/56

CPC分类号： H01L23/3135 ,  H01L21/56 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/85148 ,  H01L2224/8592 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： An electronic component, in which the outer perimeter portion of a component (2) is surrounded with a first sealing resin (4), a second sealing resin (3) is filled within the periphery of the first sealing resin (4), the component (2) and a board (1) are electrically connected by a wire (5), the edge, in the vicinity of which the wire (5) passes, of the outer perimeter edge portions of the component (2) is formed to be a chamfered oblique surface (31), and the wire (5) is provided to extend to the board (1) along the oblique surface (31). By this means, the overall height of the electronic component can be kept low.

公开(公告)号：JP5223231B2

公开(公告)日：2013-06-26

申请号：JP2007116711

申请日：2007-04-26

申请人： 富士通セミコンダクター株式会社

发明人： 隆雄 西村

IPC分类号： H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L25/0657 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10155 ,  H01L2924/10157 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4554

摘要： PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device by preventing the entry of an inorganic filler in a sealing resin among semiconductor elements. SOLUTION: A semiconductor element 21 is stacked on a semiconductor element 20 by means of an adhesive member 31 fitted on the main surface of the semiconductor element 21, and an area of the adhesive member 31 in contact with the semiconductor element 20 is made larger than that in contact with the semiconductor element 21 in a region where the semiconductor element 20 is mounted, and furthermore, side surfaces of the semiconductor element 21 and the adhesive member 31 have an inclined structure. By this the inclined structure, when a sealing resin 50 is subject to transfer molding, no inorganic filler in the sealing resin 50 enters among the stacked semiconductor elements 20 and 21. Thus, the reliability of the semiconductor device can be improved. COPYRIGHT: (C)2009,JPO&INPIT

摘要翻译： 要解决的问题：通过防止半导体元件中的密封树脂中的无机填料进入来提高半导体器件的可靠性。 解决方案：半导体元件21通过装配在半导体元件21的主表面上的粘合构件31堆叠在半导体元件20上，并且与半导体元件20接触的粘合构件31的区域是 比安装有半导体元件20的区域大的与半导体元件21接触的部分大，此外，半导体元件21和粘接部件31的侧面呈倾斜结构。 通过这种倾斜结构，当密封树脂50经受传递模塑时，密封树脂50中的无机填料不会在堆叠的半导体元件20和21之间进入，从而可以提高半导体器件的可靠性。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP5157081B2

公开(公告)日：2013-03-06

申请号：JP2006118855

申请日：2006-04-24

申请人： 日亜化学工業株式会社

发明人： 量平 広瀬 ,  将嗣 市川 ,  雅彦 佐野 ,  貴彦 坂本

IPC分类号： H01L33/22 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/48

CPC分类号： H01L24/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/10157 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having an appropriate structure for extracting light to the outside, and to provide its manufacturing method. SOLUTION: The semiconductor light emitting element has a semiconductor light emitting element structure 30 having a laminate structure 10 containing a light emitting layer 3 formed on a substrate 1. The semiconductor light emitting element structure 30 has first side faces 20a on a recessed region 20 having a bottom face 20b, with a layer closer to a substrate surface 1a than the light emitting layer 3 exposed on an upper end surface 4a of the laminate structure 10; and second side faces 7 formed along the outer periphery of the laminate structure 10. The first side faces 20a are formed to be approximately vertical to the light emitting layer 3 or the substrate surface 1a, and to be at least partially opposite to each other. The second side faces 7 connect the upper end surface 4a of the laminate structure 10 with the lower end surface of the structure 10 in contact with the substrate surface 1a, and are formed as slopes inclined inwardly from the upper end surface 4a toward the lower end surface. COPYRIGHT: (C)2008,JPO&INPIT

公开(公告)号：JP5081037B2

公开(公告)日：2012-11-21

申请号：JP2008093238

申请日：2008-03-31

申请人： ラピスセミコンダクタ株式会社

发明人： 由夫 伊東 ,  好正 久島 ,  浩和 内田

IPC分类号： H01L23/12 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L24/11 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/274 ,  H01L2924/01078 ,  H01L2924/10157 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

公开(公告)号：JP4813795B2

公开(公告)日：2011-11-09

申请号：JP2004529975

申请日：2003-06-23

申请人： エプコス アクチエンゲゼルシャフトEpcos Ag

发明人： シュテルツル アロイス ,  ニコラウス カール ,  ファイアーターク グレゴール ,  クリューガー ハンス ,  ポルトマン ユルゲン

IPC分类号： H01L23/02 ,  H01L29/06 ,  H03H3/08 ,  H03H9/05 ,  H03H9/10 ,  H03H9/25

CPC分类号： H03H9/0557 ,  H01L29/0657 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10157 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/3025 ,  H01L2924/3511 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/1078 ,  Y10T29/49146 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention relates to an encapsulated component that includes a carrier substrate and at least one chip positioned on the top of the carrier substrate and electrically connected to it by means of electrically conductive connections. The encapsulation of the chip is accomplished with a seal or dielectric layer. As a result of differing coefficients of expansion of the seal or dielectric layer and the electrically conductive connections, with changing temperatures stresses occur in the electrically conductive connections, which can lead to cracks, breaks and even to interruption of the electrically conductive connections. To mechanically relieve the electrically conductive connections of stresses from changing temperatures (in particular under extreme thermal loads), it is proposed that the carrier substrate be provided with a support element that encircles the chip, which serves to support the seal or dielectric layer, and/or that the material and the arrangement of the encapsulation be selected accordingly.

摘要翻译： 本发明涉及一种封装的部件，其包括载体基板和位于载体基板顶部上的至少一个芯片，并且通过导电连接与其电连接。 芯片的封装是用密封或介电层完成的。 由于密封或电介质层和导电连接的膨胀系数不同，在导电连接中发生变化的温度应力，这可导致导电连接的裂纹，断裂甚至中断。 为了机械地减轻应力从变化的温度（特别是在极端热负荷下）的导电连接，提出载体基板设置有环绕芯片的支撑元件，其用于支撑密封或介电层，以及 /或相应地选择封装的材料和布置。

公开(公告)号：JP4778667B2

公开(公告)日：2011-09-21

申请号：JP2002531444

申请日：2001-06-29

申请人： 富士通株式会社

发明人： 秀彦 吉良 ,  健二 小八重 ,  弘 小林 ,  高豊 山上 ,  克俊 平沢 ,  則夫 海沼 ,  ます美 片山 ,  俊二 馬場

IPC分类号： H01L21/60 ,  H01L21/301 ,  H01L21/56 ,  H01L29/06

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L24/27 ,  H01L24/29 ,  H01L29/0657 ,  H01L2224/1134 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/15151 ,  H01L2224/13099 ,  H01L2924/10155 ,  H01L2924/00

公开(公告)号：JP4741630B2

公开(公告)日：2011-08-03

申请号：JP2008153030

申请日：2008-06-11

申请人： 関西電力株式会社

发明人： 良孝 菅原

IPC分类号： H01L23/34 ,  H01L29/20 ,  H01L29/24 ,  H01L29/74 ,  H01L29/744 ,  H01L29/861

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.