摘要:
An illuminating device comprising semiconductor light-emitting devices employing a semiconductor light-emitting element, wherein outputted light is stably combined, separation of light is inhibited, and color tone is variable. Control for operating the light-emitting devices is as simple as possible. It is an illuminating device comprising a light-emitting part comprising a plurality of kinds of semiconductor light-emitting devices which differ in emission color are integrated and arranged, the semiconductor light-emitting devices comprising a semiconductor light-emitting element and a phosphor, and wherein the semiconductor light-emitting devices emit light outward on the basis of an emission from the semiconductor light-emitting element and an emission from the phosphor which is excited by said emission from the semiconductor light-emitting element to fluoresce or on the basis of an emission from the phosphor which is excited by an emission from the semiconductor light-emitting element to fluoresce, wherein the semiconductor light-emitting devices each have an emission color, the deviation duv of which from a blackbody radiation locus being within a range of -0.02‰¤duv‰¤0.02, in the uv chromaticity diagram according to UCS (u,v) color system (CIE 1960), and outputted lights from the light-emitting part in which the plurality of kinds of the semiconductor light-emitting devices are integrated and arranged, are mixed together and emitted outward.
摘要:
To provide a phosphor emitting green fluorescence and having such superior characteristics as excellent conversion efficiency of blue light or near-ultraviolet light and excellent color purity, a phosphor satisfying the following conditions (i) to (v) : (i) the wavelength of emission peak thereof is 510 nm or longer and 542 nm or shorter, when excited with light of 400 nm or 455 nm (ii) the full width at half maximum of emission peak thereof is 75 nm or narrower, when excited with light of 400 nm or 455 nm, (iii) the external quantum efficiency, which is defined by the formula below, is 0.42 or larger, when excited with light of 400 nm or 455 nm, external quantum efficiency = internal quantum efficiency × absorption efficiency (iv) a part of its surface comprises substance containing oxygen, and (v) it contains a bivalent and trivalent metal element (M II element), and its molar ratio to the total bivalent elements is larger than 1 % and smaller than 15 %.
摘要:
PROBLEM TO BE SOLVED: To provide a novel member for a semiconductor light-emitting device, which is excellent in transparency, light resistance and heat resistance, seals the semiconductor light-emitting device without causing cracks and exfoliation even in long-period use, and can hold a phosphor.SOLUTION: The member has: (1) hydroxyl or a functional group which can be hydrogen-bonded with oxygen in metalloxan bond on the surface of ceramics or a metal; (2) a maintaining ratio of transmission of light having a wavelength of 400 nm at 80% or more but not more than 110%, before and after the member is left at 200°C for 500 hours; (3) no change recognized by visual inspection, after applying light having a center wavelength of 400 nm or more but not more than 450 nm and a wavelength over 385nm but not more than 500 nm for 24 hours so that an illumination intensity with a wavelength of 436 nm is 4,500 W/m; and (4) a refractive index of light having a wavelength of 550 nm at 1.45 or more.
摘要:
PROBLEM TO BE SOLVED: To provide a light-emitting apparatus which is excellent in heat radiation performance and hardly causes deformation or damage due to an external force in manufacturing processes or when it is mounted on a circuit board. SOLUTION: The apparatus has a package provided with a recess having an internal wall and a bottom surface on its upper surface, and a lead terminal exposed on the bottom surface of the recess and protruding from the side surface of the package. The lead terminal has a first lead terminal receiving a semiconductor light-emitting device to be arranged, and having a thick film region exposed also from the rear surface of the package; and a second lead terminal to be conducted to the semiconductor light-emitting device. In the first lead terminal, the rear surface of the thick film region is on the same plane as that of the rear surface of a protruding region protruding from the side surface of the package. The rear surface of the package has a first rear surface on the same plane as those of the rear surface of the thick film region and the rear surface of the protruding region, and a second rear surface contacting the thick film region and recessed from the first rear surface. COPYRIGHT: (C)2008,JPO&INPIT