公开(公告)号：KR20100036073A

公开(公告)日：2010-04-07

申请号：KR20080095519

申请日：2008-09-29

申请人： SAMSUNG ELECTRONICS CO LTD

发明人： YIM CHOONG BIN ,  CHO TAE JE

IPC分类号： H01L21/60

CPC分类号： H01L25/105 ,  H01L23/3128 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/92125 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01049

摘要： PURPOSE: A semiconductor package having an ink-jet type dam and a method of manufacturing the same are provided to form easily a dam without an additional process by installing a semiconductor chip on a substrate and forming a dam in a marking process of a semiconductor chip. CONSTITUTION: A substrate(100) is arranged on the edge of a chip mount area. A pad forming part arranging a plurality of pads(111) is included. A first semiconductor chip(200) is arranged on the substrate corresponding to the chip mount part. A dam is arranged between the first semiconductor chip and the pad forming part. The dam separates at least one part among a plurality of pads from the first semiconductor chip. The underfill material covers a mobilized plane of the first semiconductor chip.

摘要翻译： 目的：提供具有喷墨式大坝的半导体封装及其制造方法，以便通过在基板上安装半导体芯片并在半导体芯片的标记工艺中形成堤坝而容易地形成坝体而不需要额外的工艺 。 构成：衬底（100）布置在芯片安装区域的边缘。 包括布置多个焊盘（111）的焊盘形成部分。 第一半导体芯片（200）布置在对应于芯片安装部分的基板上。 在第一半导体芯片和焊盘形成部分之间布置有一个坝。 大坝从第一半导体芯片分离多个焊盘中的至少一个部分。 底部填充材料覆盖第一半导体芯片的移动平面。

公开(公告)号：KR1020090031411A

公开(公告)日：2009-03-25

申请号：KR1020097000426

申请日：2007-06-25

申请人： 소니 가부시끼가이샤

发明人： 토모다카츠히로 ,  도이마사토 ,  타카기시토시야 ,  카네미츠토시아키

IPC分类号： H01L33/52 ,  H01L21/52

CPC分类号： G09F9/33 ,  H01L24/32 ,  H01L33/52 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/83051 ,  H01L2224/83143 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15156 ,  H01L2924/15788 ,  H05K3/305 ,  H01L2924/00

摘要： This invention provides a mounting method which, when an object such as an element, particularly a minute object, is mounted on a board, can realize the mounting easily and reliably with high positional accuracy. In the mounting method, an element holding layer (12) formed of a material which can regulate viscosity is formed on a board (11). In the element holding layer (12), the viscosity of a first portion (12a) including a mounting region of the element is regulated so that the element is movable by itself, and, in addition, the viscosity of a second portion (12b), which is the outside of the first portion (12a), is regulated so that the element is not movable by itself. After mounting one element (13) on the first portion (12a), the viscosity of the first portion (12a) is regulated so that an element (13) is not movable by itself.

摘要翻译： 本发明提供了一种安装方法，当将诸如元件，特别是分钟物体的物体安装在板上时，可以以高位置精度实现安装容易且可靠。 在安装方法中，在板（11）上形成由能够调节粘度的材料形成的元件保持层（12）。 在元件保持层（12）中，包括元件的安装区域的第一部分（12a）的粘度被调整为使得元件可以自身移动，另外，第二部分（12b）的粘度 是第一部分（12a）的外侧，被调整为使得元件不能自身移动。 在第一部分（12a）上安装一个元件（13）之后，第一部分（12a）的粘度被调整为使元件（13）不能自身移动。

公开(公告)号：KR1020090031279A

公开(公告)日：2009-03-25

申请号：KR1020080092006

申请日：2008-09-19

申请人： 르네사스 일렉트로닉스 가부시키가이샤

发明人： 아마노겐지 ,  하세베하지메

IPC分类号： H01L21/60 ,  H01L23/50

CPC分类号： H01L23/49503 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/49548 ,  H01L23/49568 ,  H01L23/49582 ,  H01L24/28 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/27013 ,  H01L2224/29007 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and manufacturing method thereof are provided to prevent the paste from being flowed out the rear side of sealer from the chip loading part by forming the step part lower than the chip mounting face in the peripheral part. The Ag paste(6) is arranged on the supporting surface of a chip(1c) of the tap(1b). The semiconductor chip is mounted on the tap through the Ag paste. The pad(2a) of the semiconductor chip and the lead(1a) of the tap are electrically connected with a plurality of wires(4). The semiconductor chip and the plurality of wires are sealed by the sealer(3). The step part(1e) is formed in the peripheral part of the supporting surface of a chip of the tap. The step part is lower than that of the supporting surface of a chip. Therefore, the Ag paste stays within the step part.

摘要翻译： 提供一种半导体器件及其制造方法，以通过在周边部分中形成低于芯片安装面的台阶部来防止糊料从密封装载部分流出密封件的后侧。 Ag糊料（6）布置在丝锥（1b）的芯片（1c）的支撑表面上。 半导体芯片通过Ag膏安装在龙头上。 半导体芯片的焊盘（2a）和分接头的引线（1a）与多根导线（4）电连接。 半导体芯片和多根金属丝被密封件（3）密封。 台阶部分（1e）形成在龙头的芯片的支撑表面的周边部分中。 台阶部分低于芯片的支撑面。 因此，Ag糊料保留在台阶部分内。

公开(公告)号：KR1020080059524A

公开(公告)日：2008-06-30

申请号：KR1020070136604

申请日：2007-12-24

申请人： 신꼬오덴기 고교 가부시키가이샤

发明人： 아라키야스시

IPC分类号： H01L23/12

CPC分类号： H01L21/563 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A mounting substrate and an electronic device are provided to increase an area of a mounting region by forming a concave part facing an electrode on an outer surface of a dam member. An electronic element is mounted on a mounting region(27). An electrode is formed on an electrode forming region(28). The mounting region is surrounded by the electrode forming region. A dam member(50) is formed in a boundary between the mounting region and the electrode forming region to prevent an outflow of a filling agent to the electrode forming region. The filling agent is used for filling up a gap between the electronic element and the mounting substrate. A concave part(51) facing the electrode is formed on an outer surface of the dam member.

摘要翻译： 提供安装基板和电子装置，通过在坝体的外表面上形成面向电极的凹部来增加安装区域的面积。 电子元件安装在安装区域（27）上。 在电极形成区域（28）上形成电极。 安装区域被电极形成区域包围。 在安装区域和电极形成区域之间的边界处形成阻挡构件（50），以防止填充剂向电极形成区域流出。 填充剂用于填充电子元件和安装基板之间的间隙。 在坝体的外表面上形成面对电极的凹部（51）。

公开(公告)号：KR1020080058162A

公开(公告)日：2008-06-25

申请号：KR1020070105384

申请日：2007-10-19

申请人： 후지쯔 세미컨덕터 가부시키가이샤

发明人： 니시무라다카오 ,  나리사와요시아키

IPC分类号： H01L23/28

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83856 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/0695 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/013

摘要： A semiconductor device and a manufacturing method of the same are provided to make the semiconductor device thin while maintaining the freedom degree for sizes or structures of plural semiconductor chips laminated on a support substrate. A semiconductor device includes a wiring substrate(41), a first semiconductor chip(42), and a second semiconductor chip(44). The first semiconductor chip is mounted over the wiring substrate. The second semiconductor chip is mounted on the first semiconductor chip in such as way that a position of the second semiconductor chip is shifted for that of the first semiconductor chip. A part of a main surface of the second semiconductor chip faces the first semiconductor chip. An electrode pad on the main surface of the second semiconductor chip is connected to a second semiconductor chip coupling pad of the wiring substrate by a coupling unit.

摘要翻译： 提供半导体器件及其制造方法，以使得半导体器件薄而保持层叠在支撑衬底上的多个半导体芯片的尺寸或结构的自由度。 半导体器件包括布线基板（41），第一半导体芯片（42）和第二半导体芯片（44）。 第一半导体芯片安装在布线基板上。 第二半导体芯片以第二半导体芯片的位置相对于第一半导体芯片的位置移动的方式安装在第一半导体芯片上。 第二半导体芯片的主表面的一部分面向第一半导体芯片。 第二半导体芯片的主表面上的电极焊盘通过耦合单元连接到布线基板的第二半导体芯片耦合焊盘。

公开(公告)号：KR1020080038262A

公开(公告)日：2008-05-02

申请号：KR1020087009547

申请日：2003-04-28

申请人： 르네사스 일렉트로닉스 가부시키가이샤

发明人： 단노타다토시 ,  츠치야츠토무

IPC分类号： H01L23/50 ,  H01L21/60

CPC分类号： H01L24/32 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/50 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/97 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/27013 ,  H01L2224/29007 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H03F3/189 ,  H01L2924/20645 ,  H01L2224/83 ,  H01L2224/78 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A high-frequency power module assembled in a portable telephone and incorporating a high-frequency unit analog signal processing IC including a low-noise amplifier for amplifying a weak signal. A semiconductor device comprises an encapsulating body made of an insulating resin, leads extending inside and outside the encapsulating body, a tab provided in the encapsulating body and having a semiconductor element fixing area and a wire connection area on one major surface, a semiconductor element fixed to the semiconductor element fixing area and having electrode terminals on an exposed major surface, conductive wires for connecting the electrode terminals of the semiconductor element to the leads, and conductive wires for connecting the electrode terminals to the wire connection area of the tab. A circuit is monolithically fabricated in the semiconductor element and composed of circuit sections. In a specific circuit section (low-noise amplifier), a part of the circuit sections, all the grounding electrode terminals out of the electrode terminals of the semiconductor element are not connected to the tab through wires, and connected to the leads through the wires.

摘要翻译： 一种组装在便携式电话中的高频功率模块，并且包含高频单元模拟信号处理IC，该高频单元模拟信号处理IC包括用于放大弱信号的低噪声放大器。 本发明提供一种半导体装置，其特征在于，具备：由绝缘树脂构成的封装体;在所述封装体的内外延伸的引线;设置在所述封装体内，在一个主面上具有半导体元件固定区域和配线连接区域的接头; 到半导体元件固定区域并且在暴露的主表面上具有电极端子，用于将半导体元件的电极端子连接到引线的导线以及用于将电极端子连接到突片的导线连接区域的导线。 电路是单片式制造在半导体元件中并由电路部分组成。 在特定的电路部分（低噪声放大器）中，电路部分的一部分，半导体元件的电极端子中的所有接地电极端子不通过导线连接到接头，并且通过导线连接到导线 。

公开(公告)号：KR100687152B1

公开(公告)日：2007-02-27

申请号：KR1020020039599

申请日：2002-07-09

申请人： 가부시끼가이샤 도시바

发明人： 아끼야마마사히꼬 ,  나까지마미쯔오 ,  하라유지로 ,  오노즈까유따까 ,  히오끼쯔요시

IPC分类号： G02F1/1333

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/82 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/14683 ,  H01L27/3244 ,  H01L29/66742 ,  H01L51/56 ,  H01L2221/68322 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2224/27013 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/29298 ,  H01L2224/7598 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2224/83051 ,  H01L2224/83136 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/0715 ,  H01L2924/0675 ,  H01L2924/0635 ,  H01L2924/069 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： An active matrix substrate comprises a substrate, a plurality of adhesion parts provided on the substrate so as to have substantially the same height, and a plurality of active elements provided on the plurality of adhesion parts, respectively, each of the plurality of adhesion parts including a height control member and an adhesive.

公开(公告)号：KR1020060132450A

公开(公告)日：2006-12-21

申请号：KR1020060049831

申请日：2006-06-02

申请人： 세이코 엡슨 가부시키가이샤

发明人： 후카자와모토히코

IPC分类号： H01L21/302 ,  H01L21/304

CPC分类号： H01L21/6835 ,  H01L21/78 ,  H01L23/3178 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L25/0657 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/90 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/10155 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/0665 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method for manufacturing a semiconductor device, the semiconductor device thereby, a circuit board and an electronic apparatus are provided to restrain the damage of the device due to the concentration of stress and to remove effectively chipping from the device. A semiconductor wafer(10) includes an active surface(10a) and an opposite surface(10b). A plurality of semiconductor regions are formed on the active region of the wafer. A cutting region is formed at a periphery of the semiconductor regions. A first groove portion(20) is formed on the cutting region. A second groove portion(24) is formed on the opposite surface of the wafer corresponding to the first groove portion. An isotropic etching process is performed on the opposite surface of the wafer to connect the first and the second groove portions with each other. A plurality of semiconductor devices are obtained from the resultant structure by separating each semiconductor region therefrom.

摘要翻译： 提供一种制造半导体器件的方法，由此提供的半导体器件，电路板和电子设备用于抑制由于应力集中而引起的器件损坏并且有效地从器件中剥离。 半导体晶片（10）包括有源表面（10a）和相对表面（10b）。 在晶片的有源区上形成多个半导体区域。 在半导体区域的周围形成切割区域。 在切割区域上形成有第一槽部（20）。 在对应于第一槽部分的晶片的相对表面上形成第二槽部分（24）。 在晶片的相对表面上进行各向同性蚀刻处理，以将第一和第二槽部彼此连接。 从所得到的结构通过从其分离每个半导体区域获得多个半导体器件。

公开(公告)号：KR100616792B1

公开(公告)日：2006-08-29

申请号：KR1020000044982

申请日：2000-08-03

申请人： 데쿠세리아루즈 가부시키가이샤

发明人： 야마다유끼오

IPC分类号： H05K13/04

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/16 ,  H01L2224/27013 ,  H01L2224/29006 ,  H01L2224/29007 ,  H01L2224/29019 ,  H01L2224/29082 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/75 ,  H01L2224/75313 ,  H01L2224/75743 ,  H01L2224/75745 ,  H01L2224/7598 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T156/1744 ,  H01L2924/00 ,  H01L2924/00012

摘要： 미세 피치의 반도체 소자 및 회로 기판의 각 전극끼리를 확실히 접속할 수 있는 반도체 소자의 실장 방법 및 실장 장치를 제공한다.
본 발명은 절연성 접착제중에 도전 입자를 분산시킨 이방 도전성 접착 필름을 사용하여 반도체 소자의 전극과 회로 기판의 전극을 전기적으로 접속하는 반도체 소자의 실장 방법에 관한 것으로서, 도전 입자를 포함하지 않는 필름 상태의 절연성 접착제를 회로 기판 (22) 상에 가(假)압착하여 절연성 접착제층 (23) 을 설치하는 단계, 소정 위치에 가압용 칩 (21) 을 설치한 압착 헤드 (2) 를 사용하여 절연성 접착제층 (23) 에 소정 크기의 오목부 (23a) 를 형성하는 단계, 절연성 접착제층 (23) 의 오목부 (23a) 내에 소정 크기의 이방 도전성 접착 필름을 배치하는 단계, 및 소정의 IC 칩 (11) 을 압착 헤드 (2) 의 소정 위치에 장착한 후 이 IC 칩 (11) 을 위치 결정하여 회로 기판 (22) 상에 본(本)압착하는 단계를 구비한다.

公开(公告)号：KR1020060052592A

公开(公告)日：2006-05-19

申请号：KR1020050107600

申请日：2005-11-10

申请人： 샤프 가부시키가이샤

发明人： 세코도시하루

IPC分类号： H01L23/12 ,  H01L21/60

CPC分类号： H01L23/4985 ,  H01L21/563 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/27013 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1579 ,  H05K1/111 ,  H05K1/189 ,  H05K3/244 ,  H05K2201/09736 ,  H05K2201/09745 ,  H05K2201/10674 ,  H05K2203/0369 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A flexible wiring substrate is provided which realizes a fine pitch of a wiring pattern and improves mechanical strength of the wiring pattern so as to prevent breaks or exfoliation of the wiring pattern. A flexible wiring substrate 3 of the present invention includes an insulation tape 6, and a wiring pattern 7 formed on the insulation tape 6. A thickness of the wiring pattern 7 is made thinner in a mounting region, where a semiconductor element is connected to, than in a non-mounting region.