摘要:
본 발명의 일 실시예에 따른 전력 반도체 패키지는, 적어도 한개 이상의 제1 반도체소자가 실장 되어 형성된 베이스기판; 상기 제1 반도체소자의 상면에 형성되고, 솔더 페이스트가 주입되는 주입구가 형성된 리드프레임; 및 상기 제1 반도체소자와 상기 리드프레임 사이에 삽입되어 이격공간을 형성하는 스페이스를 포함하며, 상기 이격공간 내부에 솔더 페이스트가 충진되는 반도체모듈 패키지를 제공한다.
摘要:
PURPOSE: A die bond film and the use are provided to prevent voids formation at the border of the die bond film and adherent. CONSTITUTION: A die bond film(3) includes glycidyl group contained acrylic copolymer having an average molecular weight of 500,000 and phenol resin. The weight ratio of phenol resin having the content of the glycidyl group contained acrylic copolymer to the phenol resin is 5-30. The die bond film does not include epoxy resins having the average molecular weight of 5000 or less. The die bond film has the epoxy value of 0.15-0.65 e.q.kg based on the glycidyl group-contained acrylic copolymer and the glass transition point of (-15)-40 deg. Celsius. Moreover, the storage modulus of the die bond film at 150 deg. Celsius is 0.1 MPa or greater.
摘要:
PURPOSE: An adhesive composition is provided to have excellent reclamation to structure like metal wire, and uneven parts on a semiconductor exposed to surface for adhesion, and to have improved interfacial adhesion with semiconductor support board, thereby obtaining reliability even under high temperature/high humidity condition. CONSTITUTION: An adhesive composition comprises a copolymerized acrylate compound containing one or more reactive group, a thermosetting epoxy mixture, a hardener, a filler, and a curing accelerator. The weight ratio of the compound and the mixture is 95:5 - 65:35. The mixture comprises one or more epoxy resin of which melting viscosity is 0.1 Pa·s at 150 °C. The comprised amount of the filler is 10-80 weight% and the curing accelerator is 0.1-1.4 parts by weight, based on 100.0 parts by weight of the sum of the compound, the mixture and the hardener.
摘要:
전극 단자들이 형성된 웨이퍼의 액티브 면에 격자 형태로 크랙을 형성한다. 상기 액티브 면과 마주하는 웨이퍼의 뒷면을 그라인딩 한다. 상기 웨이퍼의 액티브 면에 테이프를 부착한다. 상기 테이프를 늘려 웨이퍼를 반도체 칩들로 개별화 한다. 상기 반도체 칩들 및 테이프의 표면에 실드층을 형성한다. 상기 반도체 칩들 사이의 실드층을 절단하여, 반도체 칩들의 뒷면 및 측면들에 제 1 실드 패턴이 형성된 반도체 칩들로 개별화 한다. 기판에 상기 반도체 칩들을 부착한다. 상기 반도체 칩들의 각 액티브 면에 제 2 실드 패턴을 형성한다. 상기 반도체 칩들과 기판은 본딩 와이어에 의해 전기적, 물리적으로 연결되는 반도체 패키지 제조방법이 제안된다.
摘要:
충전재를 실질적으로 포함하지 않는 구성으로 하여 다이 본드시의 압력에 의한 반도체 칩의 파손을 방지하고, 또한 인장 탄성률의 저하를 방지함과 함께, 열경화시의 열수축에 의한 휨이 발생하는 것을 방지하여, 패키지 신뢰성을 향상시키는 것이 가능한 열경화형 접착 필름을 제공하는 것이다. 반도체 장치의 제조시에 사용하는 열경화형 접착 필름이며, 열경화 후의 260℃에서의 인장 저장 탄성률이 2×10 5 내지 5×10 7 Pa이고, 충전재의 함유량이 열경화형 접착 필름 전체에 대하여 0.1중량% 이하이고, 두께가 1 내지 10㎛인 열경화형 접착 필름이다.
摘要:
In a method and system for fabricating a semiconductor device (100) having a package-on-package structure, a bottom laminate substrate (130) is formed to include interconnection patterns (170, 172) coupled to a plurality of conductive bumps (130). A top substrate is formed to mount a top package (110) by forming a polyimide tape (142) affixed to a metal layer (144), and a top die (136) attached to the metal layer (144) on an opposite side as the polyimide tape. A laminate window frame (150), which may be a part of the bottom laminate substrate, is fabricated along a periphery of the bottom laminate substrate to form a center cavity (160). The center cavity enclosed by the bottom laminate substrate, the laminate window frame and the top substrate houses the top die affixed back-to-back to a bottom die (134) that is affixed to the bottom laminate substrate. The interconnection patterns formed in the bottom laminate substrate and the laminate window frame provide the electrical coupling between the metal layer, the top and bottom dies, and the plurality of conductive bumps.
摘要:
The present invention relates to an adhesive composition that can be used in a manufacturing process of a semiconductor device, and an adhesive device processed in the form of a sheet having same, and more specifically, to an adhesive composition used for bonding a chip and a substrate, or a chip and a chip, by attaching to a cross-section of a wafer during a semiconductor manufacturing process, and especially, increases the flowability when bonding in high temperature, thereby having an excellent embeddability in structures such as uneven and metal wiring, and enhances interface adhesion with supporting members, enabling secure reliability of a semiconductor device even in high temperature/high humidity conditions, and to an adhesive sheet having same.
摘要:
PURPOSE: A thermosetting adhesive film is provided to improve package reliability by preventing damage of a semiconductor chip caused by pressure during die bonding of the film having a configuration where a filler is not substantially added, and to prevent the decrease of tensile storage modulus and warping caused by heat shrinkage during thermosetting. CONSTITUTION: A thermosetting adhesive film used at the time of manufacturing a semiconductor device has: a tensile storage modulus at 260deg.C after thermosetting of 2*10^5 to 5*10^7 Pa; a content of a filler of at most 0.1% by weight based on the entire thermosetting adhesive film; and a thickness of 1 to 10 μm. The film has a glass transition temperature before thermosetting of 15 to 50deg.C.