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公开(公告)号：TW201334129A
公开(公告)日：2013-08-16
申请号：TW101138060
申请日：2012-10-16
申请人： 日立製作所股份有限公司 , HITACHI, LTD.
发明人： 谷江尚史 , TANIE, HISASHI , 新谷寬 , SHINTANI, HIROSHI , 田中直敬 , TANAKA, NAOTAKA
CPC分类号： H01L23/562 , H01L21/52 , H01L23/36 , H01L23/3736 , H01L23/488 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/83 , H01L2224/03444 , H01L2224/0346 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05011 , H01L2224/05016 , H01L2224/05023 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/0603 , H01L2224/06051 , H01L2224/11444 , H01L2224/1146 , H01L2224/13005 , H01L2224/13011 , H01L2224/13017 , H01L2224/13078 , H01L2224/1308 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16227 , H01L2224/27444 , H01L2224/2745 , H01L2224/2746 , H01L2224/29005 , H01L2224/29011 , H01L2224/29017 , H01L2224/29078 , H01L2224/2908 , H01L2224/30181 , H01L2224/32105 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/3701 , H01L2224/37147 , H01L2224/38 , H01L2224/40095 , H01L2224/40106 , H01L2224/40229 , H01L2224/4103 , H01L2224/41176 , H01L2224/73204 , H01L2224/8309 , H01L2224/83101 , H01L2224/8321 , H01L2224/83801 , H01L2224/83815 , H01L2224/84801 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/351 , H01L2224/29155 , H01L2224/29147 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： 本發明係一種半導體裝置及其製造方法，其中，半導體裝置係具有將半導體晶片(1)的上面，藉由變形吸收層(2a)及接合層(3a)而電性連接於導電構件(4)，將下面藉由變形吸收層(2b)及接合層(3b)而電性連接於導電構件(5)之安裝構造。各變形吸收層(2a，2b)係由配置於厚度方向之中央的奈米構造層(7)，和夾持奈米構造層(7)之2層的板層(6，8)加以構成。奈米構造層(7)係具有將具有1μm以下尺寸的複數之奈米構造體(9)配置成平面狀之構造，經由奈米構造體(9)的變形而吸收因構成半導體裝置之各構件之熱變形差引起之熱應力。
简体摘要： 本发明系一种半导体设备及其制造方法，其中，半导体设备系具有将半导体芯片(1)的上面，借由变形吸收层(2a)及接合层(3a)而电性连接于导电构件(4)，将下面借由变形吸收层(2b)及接合层(3b)而电性连接于导电构件(5)之安装构造。各变形吸收层(2a，2b)系由配置于厚度方向之中央的奈米构造层(7)，和夹持奈米构造层(7)之2层的板层(6，8)加以构成。奈米构造层(7)系具有将具有1μm以下尺寸的复数之奈米构造体(9)配置成平面状之构造，经由奈米构造体(9)的变形而吸收因构成半导体设备之各构件之热变形差引起之热应力。
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公开(公告)号：TWI614877B
公开(公告)日：2018-02-11
申请号：TW105110663
申请日：2012-08-14
发明人： 金澤孝光 , KANAZAWA, TAKAMITSU , 秋山悟 , AKIYAMA, SATORU
CPC分类号： H01L25/072 , H01L21/8213 , H01L23/3107 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/5384 , H01L23/5386 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/0207 , H01L27/0617 , H01L27/088 , H01L29/1066 , H01L29/1608 , H01L29/78 , H01L29/7802 , H01L29/808 , H01L29/8083 , H01L2224/04034 , H01L2224/04042 , H01L2224/05554 , H01L2224/0603 , H01L2224/291 , H01L2224/29139 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/3701 , H01L2224/3702 , H01L2224/371 , H01L2224/37147 , H01L2224/40105 , H01L2224/40145 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/014 , H01L2924/00012 , H01L2224/48227 , H01L2924/00 , H01L2224/84
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公开(公告)号：TW201314866A
公开(公告)日：2013-04-01
申请号：TW101129402
申请日：2012-08-14
发明人： 金澤孝光 , KANAZAWA, TAKAMITSU , 秋山悟 , AKIYAMA, SATORU
CPC分类号： H01L25/072 , H01L21/8213 , H01L23/3107 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/5384 , H01L23/5386 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/0207 , H01L27/0617 , H01L27/088 , H01L29/1066 , H01L29/1608 , H01L29/78 , H01L29/7802 , H01L29/808 , H01L29/8083 , H01L2224/04034 , H01L2224/04042 , H01L2224/05554 , H01L2224/0603 , H01L2224/291 , H01L2224/29139 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/3701 , H01L2224/3702 , H01L2224/371 , H01L2224/37147 , H01L2224/40105 , H01L2224/40145 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/014 , H01L2924/00012 , H01L2224/48227 , H01L2924/00 , H01L2224/84
摘要： 本發明係提供一種可提高半導體裝置之可靠性之技術。在本發明中，形成於半導體晶片CHP1之表面上之閘極焊墊GPj係以比其他引線(汲極引線DL或閘極引線GL)更接近源極引線SL之方式配置。其結果，根據本發明，由於可縮短閘極焊墊GPj與源極引線SL間之距離，故可縮短連接閘極焊墊GPj與源極引線SL之導線Wgj之長度。因此，根據本發明，可充分降低存在於導線Wgj中之寄生電感。
简体摘要： 本发明系提供一种可提高半导体设备之可靠性之技术。在本发明中，形成于半导体芯片CHP1之表面上之闸极焊垫GPj系以比其他引线(汲极引线DL或闸极引线GL)更接近源极引线SL之方式配置。其结果，根据本发明，由于可缩短闸极焊垫GPj与源极引线SL间之距离，故可缩短连接闸极焊垫GPj与源极引线SL之导线Wgj之长度。因此，根据本发明，可充分降低存在于导线Wgj中之寄生电感。
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公开(公告)号：TWI485411B
公开(公告)日：2015-05-21
申请号：TW101125454
申请日：2012-07-13
发明人： 鈴木健治 , SUZUKI, KENJI
IPC分类号： G01R31/26
CPC分类号： G01R15/207 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/3701 , H01L2224/37013 , H01L2224/3702 , H01L2224/40095 , H01L2224/40247 , H01L2224/45 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/37099 , H01L2224/84
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公开(公告)号：TW201307865A
公开(公告)日：2013-02-16
申请号：TW101125454
申请日：2012-07-13
发明人： 鈴木健治 , SUZUKI, KENJI
IPC分类号： G01R31/26
CPC分类号： G01R15/207 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/3701 , H01L2224/37013 , H01L2224/3702 , H01L2224/40095 , H01L2224/40247 , H01L2224/45 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/37099 , H01L2224/84
摘要： 本發明之目的係在包含具有U字形電流路徑之一次導體之電流感測器中降低製造成本。電流感測器(200)包含：具有U字形電流路徑(210A)之一次導體(210)、用以支撐磁電轉換元件(230A)之支撐部(220A)、及連接於支撐部(210A)之引線端子(220B_1)，且支撐部(220A)以不與電流路徑(210A)電性連接之方式形成。
简体摘要： 本发明之目的系在包含具有U字形电流路径之一次导体之电流传感器中降低制造成本。电流传感器(200)包含：具有U字形电流路径(210A)之一次导体(210)、用以支撑磁电转换组件(230A)之支撑部(220A)、及连接于支撑部(210A)之引线端子(220B_1)，且支撑部(220A)以不与电流路径(210A)电性连接之方式形成。
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公开(公告)号：TW201628161A
公开(公告)日：2016-08-01
申请号：TW105110663
申请日：2012-08-14
发明人： 金澤孝光 , KANAZAWA, TAKAMITSU , 秋山悟 , AKIYAMA, SATORU
CPC分类号： H01L25/072 , H01L21/8213 , H01L23/3107 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/5384 , H01L23/5386 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/0207 , H01L27/0617 , H01L27/088 , H01L29/1066 , H01L29/1608 , H01L29/78 , H01L29/7802 , H01L29/808 , H01L29/8083 , H01L2224/04034 , H01L2224/04042 , H01L2224/05554 , H01L2224/0603 , H01L2224/291 , H01L2224/29139 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/3701 , H01L2224/3702 , H01L2224/371 , H01L2224/37147 , H01L2224/40105 , H01L2224/40145 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/014 , H01L2924/00012 , H01L2224/48227 , H01L2924/00 , H01L2224/84
摘要： 本發明係提供一種可提高半導體裝置之可靠性之技術。在本發明中，形成於半導體晶片CHP1之表面上之閘極焊墊GPj係以比其他引線(汲極引線DL或閘極引線GL)更接近源極引線SL之方式配置。其結果，根據本發明，由於可縮短閘極焊墊GPj與源極引線SL間之距離，故可縮短連接閘極焊墊GPj與源極引線SL之導線Wgj之長度。因此，根據本發明，可充分降低存在於導線Wgj中之寄生電感。
简体摘要： 本发明系提供一种可提高半导体设备之可靠性之技术。在本发明中，形成于半导体芯片CHP1之表面上之闸极焊垫GPj系以比其他引线(汲极引线DL或闸极引线GL)更接近源极引线SL之方式配置。其结果，根据本发明，由于可缩短闸极焊垫GPj与源极引线SL间之距离，故可缩短连接闸极焊垫GPj与源极引线SL之导线Wgj之长度。因此，根据本发明，可充分降低存在于导线Wgj中之寄生电感。
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公开(公告)号：TWI538161B
公开(公告)日：2016-06-11
申请号：TW101129402
申请日：2012-08-14
发明人： 金澤孝光 , KANAZAWA, TAKAMITSU , 秋山悟 , AKIYAMA, SATORU
CPC分类号： H01L25/072 , H01L21/8213 , H01L23/3107 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/5384 , H01L23/5386 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/34 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/0207 , H01L27/0617 , H01L27/088 , H01L29/1066 , H01L29/1608 , H01L29/78 , H01L29/7802 , H01L29/808 , H01L29/8083 , H01L2224/04034 , H01L2224/04042 , H01L2224/05554 , H01L2224/0603 , H01L2224/291 , H01L2224/29139 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/3701 , H01L2224/3702 , H01L2224/371 , H01L2224/37147 , H01L2224/40105 , H01L2224/40145 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/014 , H01L2924/00012 , H01L2224/48227 , H01L2924/00 , H01L2224/84
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公开(公告)号：TWI523166B
公开(公告)日：2016-02-21
申请号：TW101138060
申请日：2012-10-16
申请人： 日立製作所股份有限公司 , HITACHI, LTD.
发明人： 谷江尚史 , TANIE, HISASHI , 新谷寬 , SHINTANI, HIROSHI , 田中直敬 , TANAKA, NAOTAKA
CPC分类号： H01L23/562 , H01L21/52 , H01L23/36 , H01L23/3736 , H01L23/488 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/83 , H01L2224/03444 , H01L2224/0346 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05011 , H01L2224/05016 , H01L2224/05023 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/0603 , H01L2224/06051 , H01L2224/11444 , H01L2224/1146 , H01L2224/13005 , H01L2224/13011 , H01L2224/13017 , H01L2224/13078 , H01L2224/1308 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16227 , H01L2224/27444 , H01L2224/2745 , H01L2224/2746 , H01L2224/29005 , H01L2224/29011 , H01L2224/29017 , H01L2224/29078 , H01L2224/2908 , H01L2224/30181 , H01L2224/32105 , H01L2224/32227 , H01L2224/32245 , H01L2224/33181 , H01L2224/3701 , H01L2224/37147 , H01L2224/38 , H01L2224/40095 , H01L2224/40106 , H01L2224/40229 , H01L2224/4103 , H01L2224/41176 , H01L2224/73204 , H01L2224/8309 , H01L2224/83101 , H01L2224/8321 , H01L2224/83801 , H01L2224/83815 , H01L2224/84801 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/351 , H01L2224/29155 , H01L2224/29147 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2924/00 , H01L2224/05552
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公开(公告)号：TW201413839A
公开(公告)日：2014-04-01
申请号：TW102127854
申请日：2013-08-02
发明人： 高田圭太 , TAKADA, KEITA , 團野忠敏 , DANNO, TADATOSHI , 波多俊幸 , HATA, TOSHIYUKI
CPC分类号： H01L23/49524 , H01L21/561 , H01L21/565 , H01L21/568 , H01L23/3107 , H01L23/3114 , H01L23/49513 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/77 , H01L24/84 , H01L24/92 , H01L2224/05554 , H01L2224/29111 , H01L2224/32245 , H01L2224/3701 , H01L2224/37147 , H01L2224/40091 , H01L2224/40095 , H01L2224/40132 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48132 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/7755 , H01L2224/77611 , H01L2224/83801 , H01L2224/8385 , H01L2224/84005 , H01L2224/84205 , H01L2224/85005 , H01L2224/85205 , H01L2224/92246 , H01L2224/92247 , H01L2924/00014 , H01L2924/0132 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01047 , H01L2924/0105 , H01L2924/207
摘要： 本發明之半導體裝置之製造方法係準備包含搭載有第1半導體晶片之第1晶片搭載部及搭載有第2半導體晶片之第2晶片搭載部的引線框架。又，該方法包含如下步驟，即，將第1金屬帶之一端連接於形成於上述第1半導體晶片之正面上之第1電極墊，將上述第1金屬帶之與上述一端為相反側之另一端連接於上述第2晶片搭載部上之帶連接面。又，於俯視時，上述第2晶片搭載部之上述帶連接面位於上述第1半導體晶片與上述第2半導體晶片之間。又，上述帶連接面之高度係配置於較上述第2晶片搭載部之上述第2半導體晶片之搭載面之高度更高之位置。
简体摘要： 本发明之半导体设备之制造方法系准备包含搭载有第1半导体芯片之第1芯片搭载部及搭载有第2半导体芯片之第2芯片搭载部的引线框架。又，该方法包含如下步骤，即，将第1金属带之一端连接于形成于上述第1半导体芯片之正面上之第1电极垫，将上述第1金属带之与上述一端为相反侧之另一端连接于上述第2芯片搭载部上之带连接面。又，于俯视时，上述第2芯片搭载部之上述带连接面位于上述第1半导体芯片与上述第2半导体芯片之间。又，上述带连接面之高度系配置于较上述第2芯片搭载部之上述第2半导体芯片之搭载面之高度更高之位置。
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