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    Plasma system with a balanced source
    2.
    发明授权
    Plasma system with a balanced source 失效
    具有均衡源的等离子体系统

    公开(公告)号：US06353206B1

    公开(公告)日：2002-03-05

    申请号：US08657619

    申请日：1996-05-30

    Applicant: Craig A. Roderick

    Inventor： Craig A. Roderick

    IPC: B23K1000

    CPC classification number: H01J37/32082

    Abstract: A plasma system which is to be coupled to a power source, the plasma system including a chamber defining an internal cavity in which a plasma is generated during operation; a coil which during operation couples power from the power source into the plasma within the chamber, the coil having first and second terminals; a first capacitor which is coupled between the first terminal and a reference potential; and a second capacitor connected to the second terminal and through which the power source is coupled to the second terminal.

    Abstract translation: 要耦合到电源的等离子体系统，等离子体系统包括限定其中在操作期间产生等离子体的内部空腔的室; 线圈，其在操作期间将来自所述电源的功率耦合到所述腔室内的等离子体中，所述线圈具有第一和第二端子; 耦合在第一端子和参考电位之间的第一电容器; 以及连接到第二端子并且电源耦合到第二端子的第二电容器。

    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
    4.
    发明授权
    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers 失效
    UHF / VHF等离子体，用于在半导体晶片上形成集成电路结构

    公开(公告)号：US5300460A

    公开(公告)日：1994-04-05

    申请号：US32744

    申请日：1993-03-16

    Applicant: Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    Inventor： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC: C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/22 ,  H01L21/265

    CPC classification number: H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

    Abstract: An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.

    Abstract translation: 公开了使用等离子体辅助方法制造半导体晶片上的集成电路结构的改进方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率产生。 低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积的比例为约2:1至约20:1，电极间距约为5cm。 到约30厘米。 高压等离子体辅助蚀刻或沉积工艺，即工艺可以在500毫乇至50乇以上的压力下进行; 阳极至阴极间距小于约5厘米。 通过使用在约50至约800MHz的范围内操作的等离子体等离子体辅助处理，电极护套电压保持足够低，以避免损坏晶片上的结构，但足够高以优选允许引发 该过程无需补充电源。 在该频率范围内工作也可能导致微载物效应的降低或消除。

    Variable RF power splitter
    8.
    发明授权
    Variable RF power splitter 失效
    可变RF功率分配器

    公开(公告)号：US5349313A

    公开(公告)日：1994-09-20

    申请号：US140338

    申请日：1993-10-22

    Applicant: Kenneth S. Collins ,  John R. Trow ,  Craig A. Roderick

    Inventor： Kenneth S. Collins ,  John R. Trow ,  Craig A. Roderick

    IPC: H03H7/48 ,  H03H11/30 ,  H03H7/38

    CPC classification number: H03H7/48 ,  H01F2029/143

    Abstract: A variable RF power splitter including three serially connected inductors (14, 15, 16) powered by an RF power source (11, 12). Two loads (17, 18), between which the RF power is to be split, are connected to ground from two different points in the inductance string. A variable reactance (19) connected to ground from another point in the inductance string controls the RF power splitting.

    Abstract translation: 一种可变RF功率分配器，包括由RF电源（11,12）供电的三个串联的电感器（14,15,16）。 RF功率要分开的两个负载（17,18）从电感串中的两个不同点连接到地。 从电感串中的另一点连接到地的可变电抗（19）控制RF功率分配。

    Plasma chamber support having an electrically coupled collar ring
    10.
    发明授权
    Plasma chamber support having an electrically coupled collar ring 失效
    等离子体室支撑件具有电耦合的环形环

    公开(公告)号：US06074488A

    公开(公告)日：2000-06-13

    申请号：US931708

    申请日：1997-09-16

    Applicant: Craig A. Roderick ,  Dennis S. Grimard

    Inventor： Craig A. Roderick ,  Dennis S. Grimard

    IPC: H01L21/302 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  C23C16/00 ,  C23F1/02

    CPC classification number: H01L21/6833 ,  H01L21/6831

    Abstract: A support 200 for supporting a substrate 50 in a plasma process chamber 20, comprises a dielectric member 205 having an electrode embedded therein, and having a receiving surface for receiving the substrate. An electrical conductor 210 supporting the dielectric member 205, comprises a peripheral portion 228 extending beyond the electrode in the dielectric member. A voltage supply 158 supplies an RF bias voltage to the electrode embedded in the dielectric member 205 to capacitively couple RF power from the electrode to the conductor 210, and optionally, supplies a DC voltage to electrostatically hold the substrate 50 to the dielectric member. A collar ring 230 on the peripheral portion 228 of the conductor 210, comprises a RF electrical field absorption that is sufficiently low to capacitively couple RF power from the peripheral portion of the conductor through the collar ring to a plasma sheath that extends; above the collar ring, during use of the chuck in the plasma process chamber 20. The extended RF field around the perimeter of the substrate 130 provides enhanced and more uniform plasma processing of the substrate.

    Abstract translation: 用于支撑等离子体处理室20中的衬底50的支撑件200包括具有嵌入其中的电极并且具有用于接收衬底的接收表面的电介质构件205。 支撑电介质构件205的电导体210包括延伸超过电介质构件中的电极的周边部分228。 电压源158将RF偏置电压提供给嵌入电介质构件205中的电极，以将来自电极的RF功率电容耦合到导体210，并且可选地，提供DC电压以将基板50静电保持在电介质构件上。 在导体210的周边部分228上的环形环230包括足够低的RF电场吸收，以将来自导体的周边部分的RF功率电容耦合通过套环环到延伸的等离子体护套; 在等离子体处理室20中卡盘的使用期间。在基板130的周边周围的扩展RF场提供基板的增强和更均匀的等离子体处理。

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