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    PROCESS CHAMBER HAVING TUNABLE SHOWERHEAD AND TUNABLE LINER
    3.
    发明申请
    PROCESS CHAMBER HAVING TUNABLE SHOWERHEAD AND TUNABLE LINER 审中-公开

    公开(公告)号：US20180047544A1

    公开(公告)日：2018-02-15

    申请号：US15673403

    申请日：2017-08-09

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ANDREW NGUYEN ,  XUE YANG CHANG ,  HAITAO WANG ,  KEI-YU KO ,  REZA SADJADI

    IPC: H01J37/32

    Abstract: Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to tune an impedance of the chamber liner; and a controller coupled to the first and second impedance circuits to control relative impedances of the showerhead and the chamber liner.

    CHAMBER BODY DESIGN ARCHITECTURE FOR NEXT GENERATION ADVANCED PLASMA TECHNOLOGY
    5.
    发明申请
    CHAMBER BODY DESIGN ARCHITECTURE FOR NEXT GENERATION ADVANCED PLASMA TECHNOLOGY 审中-公开
    下一代高级等离子体技术的室内设计体系结构

    公开(公告)号：US20160215883A1

    公开(公告)日：2016-07-28

    申请号：US14693254

    申请日：2015-04-22

    Applicant: Applied Materials, Inc.

    Inventor： ANDREW NGUYEN ,  Bradley J. HOWARD ,  Nicolas J. BRIGHT

    IPC: F16J10/02

    CPC classification number: F16J10/02 ,  H01J37/32834 ,  H01J37/32899

    Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

    Abstract translation: 公开了一种用于处理衬底的设备，并且在一个实施例中包括具有穿过其中形成的两个开口的双室壳体，与形成在双室壳体中的两个开口中的一个共轴对准的第一泵接口构件和第二泵接口 构件与形成在双室壳体中的两个开口中的另一个共轴对准，其中每个泵接口构件包括与两个开口的中心线同心的三个通道。

    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE
    6.
    发明申请
    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE 审中-公开
    用于控制基板温度均匀性的装置

    公开(公告)号：US20160169593A1

    公开(公告)日：2016-06-16

    申请号：US15050419

    申请日：2016-02-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： KALLOL BERA ,  XIAOPING ZHOU ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN ,  HAMID TAVASSOLI ,  SURAJIT KUMAR ,  SHAHID RAUF

    IPC: F28F3/12

    CPC classification number: F28F3/12 ,  F28F2013/001

    Abstract: Apparatus for controlling the thermal uniformity of a substrate are provided. The thermal uniformity of the substrate may be controlled to be more uniform or the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon; and a flow path disposed within the substrate support to flow a heat transfer fluid beneath the support surface, wherein the flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length, wherein the first portion is spaced about 2 mm to about 10 mm from the second portion, and wherein the first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

    Abstract translation: 提供了用于控制基板的热均匀性的装置。 可以将基板的热均匀性控制得更均匀，或者基板的热均匀性可以被控制为在所需图案中不均匀。 在一些实施例中，用于控制衬底的热均匀性的装置包括：衬底支撑件，其具有用于在其上支撑衬底的支撑表面; 以及设置在所述基板支撑件内的流动路径，以使传热流体在所述支撑表面下方流动，其中所述流动路径包括第一部分和第二部分，每个部分具有基本相当的轴向长度，其中所述第一部分间隔开约2 从第二部分到约10mm，并且其中第一部分在与第二部分的传热流体的流动相反的方向上提供传热流体的流动。

    APPARATUS FOR REMOVING PARTICLES FROM A TWIN CHAMBER PROCESSING SYSTEM
    7.
    发明申请
    APPARATUS FOR REMOVING PARTICLES FROM A TWIN CHAMBER PROCESSING SYSTEM 审中-公开
    用于从双室处理系统中去除颗粒的装置

    公开(公告)号：US20140374024A1

    公开(公告)日：2014-12-25

    申请号：US13962575

    申请日：2013-08-08

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ANDREW NGUYEN ,  TOM K. CHO ,  KARTIK RAMASWAMY ,  YOGANANDA SARODE VISHWANATH

    IPC: H01J37/32 ,  B08B7/00 ,  C23C16/48 ,  H01L21/67 ,  C23C16/455

    Abstract: Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes.

    Abstract translation: 本文提供了用于从双室处理系统中去除颗粒的设备的实施例。 在一些实施例中，用于从双室处理系统中去除颗粒的装置包括远程等离子体系统; 以及多个导管将远程等离子体系统流体耦合到双室处理系统的每个处理室，以将等离子体提供给每个处理室的排气体积，其中多个管道中的每个导管具有沿着 各排气量。

    INDUCTIVELY COUPLED PLASMA SOURCE
    8.
    发明申请
    INDUCTIVELY COUPLED PLASMA SOURCE 审中-公开
    电感耦合等离子体源

    公开(公告)号：US20140196849A1

    公开(公告)日：2014-07-17

    申请号：US13833220

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ANDREW NGUYEN ,  KARTIK RAMASWAMY ,  YANG YANG ,  STEVEN LANE

    IPC: B29C35/02

    CPC classification number: H01J37/321 ,  H01J37/3211

    Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.

    Abstract translation: 本文提供了等离子体处理的方法和装置的实施例。 在一些实施例中，电感耦合等离子体装置可以包括底壁，其包括毂和通过电容器联接到毂的环，其中所述毂和环各自是导电的，并且其中所述毂具有与 感应耦合等离子体装置的中心轴; 与所述底壁间隔开的顶壁，其中所述顶壁具有与所述中心轴线对准的中心开口，并且其中所述顶壁是导电的; 将所述环电连接到所述顶壁的侧壁; 以及将轮毂电连接到顶壁的管，该管具有与中心轴对准的中心开口。

    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL
    9.
    发明申请
    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL 审中-公开
    具有室壁温度控制的等离子体反应器

    公开(公告)号：US20130105085A1

    公开(公告)日：2013-05-02

    申请号：US13647574

    申请日：2012-10-09

    Applicant: Applied Materials, Inc.

    Inventor： IMAD YOUSIF ,  MARTIN JEFFREY SALINAS ,  SAMER BANNA ,  ANDREW NGUYEN ,  VALENTIN TODOROW ,  DMITRY LUBOMIRSKY ,  ANKUR AGARWAL ,  KALLOL BERA

    IPC: H01L21/20 ,  H01L21/306

    CPC classification number: H01L21/20 ,  H01J37/32522 ,  H01L21/30604

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中，一种装置包括：第一导电体，其布置在处理室的内部体积中的基板支撑件周围; 第一导电环，其具有耦合到所述第二导电体的第一端的内边缘，并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导电体，其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定所述第一导电环上方的第一区域 第一导电环; 以及加热器，被配置为加热第一导电体，第二导​​电体和第一导电环。

    APPARATUS TO REDUCE COMTAMINATION IN A PLASMA ETCHING CHAMBER
    10.
    发明申请
    APPARATUS TO REDUCE COMTAMINATION IN A PLASMA ETCHING CHAMBER 审中-公开

    公开(公告)号：US20190385891A1

    公开(公告)日：2019-12-19

    申请号：US16010239

    申请日：2018-06-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： XUE CHANG ,  ANDREW NGUYEN

    IPC: H01L21/687 ,  H01J37/32

    Abstract: Embodiments of process kit components for use in a substrate support, and substrate supports incorporating same, are provided herein. In some embodiments, the substrate support may include a body, a grounding shell formed of an electrically conductive material disposed about the body, a liner formed of an electrically conductive material disposed about the grounding shell, where the liner includes an upper lip that extends inwardly towards the body, a metal fastener disposed through the upper lip to couple the liner to the grounding shell, and a first insulator ring disposed atop the upper lip of the liner and covering the metal fastener.

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