公开(公告)号：US12112969B2

公开(公告)日：2024-10-08

申请号：US17403756

申请日：2021-08-16

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US11560804B2

公开(公告)日：2023-01-24

申请号：US17832568

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： Yuriy Melnik ,  Sukti Chatterjee ,  Kaushal Gangakhedkar ,  Jonathan Frankel ,  Lance A. Scudder ,  Pravin K. Narwankar ,  David Alexander Britz ,  Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: F01D5/28 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D9/02 ,  F01D25/12 ,  F01D25/28 ,  F23R3/28 ,  C07F11/00 ,  F01D25/14

Abstract: Methods for forming protective coatings on aerospace components are provided. In one or more embodiments, the method includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a first deposition process (e.g., CVD or ALD), and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second deposition process. The first deposited layer and the second deposited layer have different compositions from each other. The method also includes repeating the first deposition process and the second deposition process to form a nanolaminate film stack having from 2 pairs to about 1,000 pairs of the first deposited layer and the second deposited layer consecutively deposited on each other.

公开(公告)号：US20170287770A1

公开(公告)日：2017-10-05

申请号：US15474439

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Joseph Yudovsky

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/68742 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

公开(公告)号：US20170148626A1

公开(公告)日：2017-05-25

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

CPC classification number: H01L21/0234 ,  C23C16/45536 ,  C23C16/45551 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20240258153A1

公开(公告)日：2024-08-01

申请号：US18630688

申请日：2024-04-09

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US11984343B2

公开(公告)日：2024-05-14

申请号：US18095827

申请日：2023-01-11

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US10861736B2

公开(公告)日：2020-12-08

申请号：US16285401

申请日：2019-02-26

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Joseph Yudovsky

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

公开(公告)号：US20190189498A1

公开(公告)日：2019-06-20

申请号：US16285401

申请日：2019-02-26

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Joseph Yudovsky

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/68742 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

公开(公告)号：US10262888B2

公开(公告)日：2019-04-16

申请号：US15474439

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Joseph Yudovsky

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/68 ,  H01L21/687

Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

公开(公告)号：US20180327325A1

公开(公告)日：2018-11-15

申请号：US15976704

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Jennifer Y. Sun

IPC: C04B35/622 ,  C04B35/64 ,  C04B35/50 ,  C04B35/505 ,  C23C4/11 ,  C23C4/134 ,  C23C14/08 ,  C23C14/22 ,  C23C16/40 ,  C23C16/455 ,  C23C24/04 ,  C23C4/18 ,  C23C14/58 ,  C23C16/56

CPC classification number: C04B35/62222 ,  C04B35/44 ,  C04B35/486 ,  C04B35/50 ,  C04B35/505 ,  C04B35/64 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/6562 ,  C04B2235/66 ,  C04B2235/667 ,  C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  C23C14/08 ,  C23C14/221 ,  C23C14/5806 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  C23C24/04

Abstract: Methods comprise loading an article comprising a ceramic coating into an induction heating system or a microwave heating system and heat treating the ceramic coating using the microwave heating system or the induction heating system within a temperature range for a duration of about 1-15 minutes.