公开(公告)号：US08941188B2

公开(公告)日：2015-01-27

申请号：US13429568

申请日：2012-03-26

申请人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

发明人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

IPC分类号： H01L27/088 ,  H01L21/336 ,  H01L29/78 ,  H01L29/88 ,  H01L29/732 ,  H01L29/739 ,  H01L29/778 ,  H01L29/792 ,  H01L21/8234 ,  H01L27/082 ,  H01L27/108

CPC分类号： H01L27/0629 ,  H01L21/823487 ,  H01L27/0826 ,  H01L27/0828 ,  H01L27/10841 ,  H01L27/10864 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/7926 ,  H01L29/8611 ,  H01L29/88

摘要： A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region.

摘要翻译： 半导体装置包括半导体本体和布置在半导体本体的第一器件区域中的功率晶体管。 功率晶体管包括至少一个源极区，漏极区和至少一个体区，至少一个第一掺杂类型的漂移区和与第一掺杂类型互补的第二掺杂的至少一个补偿区，以及 栅电极，其布置成与所述至少一个体区相邻并且通过栅极电介质与所述体区电介质绝缘。 半导体布置还包括布置在半导体本体的第二器件区域中的另一半导体器件。 第二器件区域包括围绕第一掺杂型的第一半导体区域的第二掺杂型的类似结构。 另外的半导体器件包括布置在第一半导体区域中的器件区域。

公开(公告)号：US20130249001A1

公开(公告)日：2013-09-26

申请号：US13429568

申请日：2012-03-26

申请人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

发明人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

IPC分类号： H01L29/78

CPC分类号： H01L27/0629 ,  H01L21/823487 ,  H01L27/0826 ,  H01L27/0828 ,  H01L27/10841 ,  H01L27/10864 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/7926 ,  H01L29/8611 ,  H01L29/88

摘要： A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region.

摘要翻译： 半导体装置包括半导体本体和布置在半导体本体的第一器件区域中的功率晶体管。 功率晶体管包括至少一个源极区，漏极区和至少一个体区，至少一个第一掺杂类型的漂移区和与第一掺杂类型互补的第二掺杂的至少一个补偿区，以及 栅电极，其布置成与所述至少一个体区相邻并且通过栅极电介质与所述体区电介质绝缘。 半导体布置还包括布置在半导体本体的第二器件区域中的另一半导体器件。 第二器件区域包括围绕第一掺杂型的第一半导体区域的第二掺杂型的类似结构。 另外的半导体器件包括布置在第一半导体区域中的器件区域。

公开(公告)号：US08569150B2

公开(公告)日：2013-10-29

申请号：US13085196

申请日：2011-04-12

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L21/20 ,  H01L21/38

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/8083

摘要： A semiconductor device with a semiconductor body and method for its production is disclosed. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first conduction type. The semiconductor body further includes charge compensation zones of a second conduction type complementing the first conduction type, which are arranged laterally adjacent to the drift zones. The charge compensation zones are provided with a laterally limited charge compensation zone doping, which is introduced into the epitaxially grown semiconductor material. The epitaxially grown semiconductor material includes 20 to 80 atomic % of the doping material of the drift zones and a doping material balance of 80 to 20 atomic % introduced by ion implantation and diffusion.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体本体包括第一导电类型的外延生长的半导体材料的漂移区。 半导体本体还包括与第一导电类型相互补充的第二导电类型的电荷补偿区，它们被布置成横向邻近漂移区。 电荷补偿区带有横向有限的电荷补偿区掺杂，其被引入外延生长的半导体材料中。 外延生长的半导体材料包括漂移区的掺杂材料的20至80原子％和通过离子注入和扩散引入的80至20原子％的掺杂材料平衡。

公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US08405146B2

公开(公告)日：2013-03-26

申请号：US12773580

申请日：2010-05-04

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7825 ,  H03K17/063 ,  H03K2017/6878

摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

摘要翻译： 公开了一种包括具有场电极的MOS晶体管的部件布置。 一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

公开(公告)号：US20120018856A1

公开(公告)日：2012-01-26

申请号：US12842488

申请日：2010-07-23

申请人： Joachim Weyers ,  Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

发明人： Joachim Weyers ,  Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L29/06 ,  H01L21/22 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type.

摘要翻译： 公开了一种形成具有第一掺杂类型的漂移区和第二掺杂型的补偿区的半导体器件的方法，以及具有第一掺杂类型的漂移区和第二掺杂类型的补偿区的半导体器件。

公开(公告)号：US20100078694A1

公开(公告)日：2010-04-01

申请号：US12241808

申请日：2008-09-30

申请人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

发明人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L27/06 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L27/0629 ,  H01L29/42356 ,  H01L29/4916 ,  H01L29/7828 ,  H03K17/567 ,  H03K2017/6875 ,  H03K2217/0036

摘要： A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.

摘要翻译： 给出了具有漂移区，漂移控制区和布置在漂移区和漂移控制区之间的漂移控制区电介质的常规半导体元件的描述。

公开(公告)号：US20090236680A1

公开(公告)日：2009-09-24

申请号：US12052019

申请日：2008-03-20

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/06 ,  H01L21/265

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/8083

摘要： A semiconductor device with a semiconductor body and method for its production is provided. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first conduction type. The semiconductor body further includes charge compensation zones of a second conduction type complementing the first conduction type, which are arranged laterally adjacent to the drift zones. The charge compensation zones are provided with a laterally limited charge compensation zone doping, which is introduced into the epitaxially grown semiconductor material. The epitaxially grown semiconductor material includes 20 to 80 atomic % of the doping material of the drift zones and a doping material balance of 80 to 20 atomic % introduced by ion implantation and diffusion.

摘要翻译： 提供了具有半导体主体的半导体器件及其制造方法。 半导体本体包括第一导电类型的外延生长的半导体材料的漂移区。 半导体本体还包括与第一导电类型相互补充的第二导电类型的电荷补偿区，它们被布置成横向邻近漂移区。 电荷补偿区带有横向有限的电荷补偿区掺杂，其被引入外延生长的半导体材料中。 外延生长的半导体材料包括漂移区的掺杂材料的20至80原子％和通过离子注入和扩散引入的80至20原子％的掺杂材料平衡。

公开(公告)号：US20090224302A1

公开(公告)日：2009-09-10

申请号：US12043429

申请日：2008-03-06

申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L27/0733 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

摘要翻译： 具有固有电容的半导体器件及其制造方法。 半导体器件在控制电极和第一电极之间具有固有的反馈电容。 此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。 至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。 附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。 电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

公开(公告)号：US20090166729A1

公开(公告)日：2009-07-02

申请号：US11965387

申请日：2007-12-27

申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压时的击穿电荷量。