摘要:
An image sensor includes a photoelectric conversion element, a first MOS transistor having having a gate connected to the photoelectric conversion element, a second MOS transistor connected in series with the first transistor, and a third MOS transistor connected in series with the photoelectric conversion element, wherein the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistor. In one embodiment, each of the pixels included in a second group of rows includes a photoelectric conversion element but without the first, second and third MOS transistors. A fourth MOS transistor connects a photoelectric conversion element of the second group to a photoelectric conversion element of a first group, the photoelectric conversion elements of the first group being part of pixels which contain first, second and third MOS transistors.
摘要:
A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.
摘要:
A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.
摘要:
A solid-state imaging device includes a semiconductor substrate in which an element part including a plurality of light responsive elements for generating charge carriers in response to incident light and a transfer part for transferring the charge carriers generated in each light responsive element are incorporated; a lens layer is disposed on the element part so that incident light is collected in the light responsive elements; and a light beam dispersion layer is disposed between the lens layer and the element part and includes two light transmissive layers having different refractive indices for dispersing light collected by the lens layer so that collected light entering respective light responsive elements is closer to a parallel beam than the incident light. By suppressing broadening of incident light in the semiconductor substrate at the light responsive elements, fewer charge carriers enter the CCD channel region and smear is reduced.
摘要:
Provided is a nonaqueous electrolyte secondary battery which, even in the case of using a low-viscosity solvent having a narrow potential window, can increase the electrochemical stability of the nonaqueous electrolyte solution and suppress side reactions of the nonaqueous electrolyte solution during charge and discharge to reduce the degradation of the battery characteristics and has an excellent storage characteristic in high-temperature environments and a nonaqueous electrolyte solution for the nonaqueous electrolyte secondary battery. The nonaqueous electrolyte secondary battery includes: a positive electrode containing a positive-electrode active material; a negative electrode containing a negative-electrode active material; and a nonaqueous electrolyte solution containing a solute dissolved in a nonaqueous solvent, wherein the nonaqueous electrolyte solution further contains benzotrifluoride and a diisocyanate compound and the content of benzotrifluoride is 5% by volume or more in the nonaqueous electrolyte solution except the solute.
摘要:
A non-aqueous electrolyte secondary battery includes a positive electrode (1), a negative electrode (2) containing a negative electrode active material, a separator 3 interposed between the electrodes (1) and (2), and a non-aqueous electrolyte containing a non-aqueous solvent and a solute dissolved in the solvent. The non-aqueous electrolyte contains a compound represented by the following chemical formula (1): wherein n is an integer of from 2 to 6, each R represents a linear saturated hydrocarbon that may be an unsubstituted or may have a substituted group, and the Rs may be the same or different groups.
摘要:
Disclosed is a nonaqueous electrolyte secondary battery which has a negative electrode containing silicon as a negative active material, a positive electrode containing a positive active material, a nonaqueous electrolyte and a separator. Characteristically, an additive which retards oxidation of silicon during operation of the battery is contained either in an interior or surface portion of the positive electrode, or in an interior or surface portion of the negative electrode, or in an interior or surface portion of the separator.
摘要:
A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.
摘要:
A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.
摘要:
A solid-state image sensor comprises photoelectric converting devices (22) formed on a p type semiconductor substrate (1), transfer gates (26) for reading signal charges therefrom, scanning lines (21) for selecting the transfer gates (26), and transfer electrodes (11) of the first layer and transfer electrodes (12) of the second layer alternately disposed for transferring in the vertical direction the read signal charges. All the electrodes of the transfer gates (26) are formed integrally with the transfer electrodes (12) of the second layer, with the result that all the electrodes of the transfer gates (26) are common to the transfer electrodes of the same layer (the second layer). Although the potential wall (340) is formed in the transfer channel (3) beneath the transfer electrode (12) connected to the transfer gate (26), the same is insulated from adjacent the transfer electrode (11) on the charge transfer direction side. As a result, when a voltage is applied to the transfer electrode adjacent thereto, the signal charges are fully transferred.