公开(公告)号：US09318414B2

公开(公告)日：2016-04-19

申请号：US14065454

申请日：2013-10-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fen Chen ,  Minhua Lu ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Lijuan Zhang

IPC: H01L23/48 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L23/5226 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure generally provides for integrated circuit (IC) structures with through-semiconductor vias (TSV). In an embodiment, an IC structure may include a through-semiconductor via (TSV) embedded in a substrate, the TSV having a cap; a dielectric layer adjacent to the substrate; a metal layer adjacent to the dielectric layer; a plurality of vias each embedded within the dielectric layer and coupling the metal layer to the cap of the TSV at respective contact points, wherein the plurality of vias is configured to create a substantially uniform current density throughout the TSV.

Abstract translation: 本公开通常提供具有贯穿半导体通孔（TSV）的集成电路（IC）结构。 在一个实施例中，IC结构可以包括嵌入在衬底中的贯穿半导体通孔（TSV），TSV具有帽; 与基板相邻的电介质层; 与介电层相邻的金属层; 多个通孔，每个通孔嵌入在电介质层内，并将金属层耦合到各个接触点处的TSV的盖，其中多个通孔被配置成在整个TSV中产生基本均匀的电流密度。

公开(公告)号：US09318413B2

公开(公告)日：2016-04-19

申请号：US14065451

申请日：2013-10-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fen Chen ,  Andrew T. Kim ,  Minhua Lu ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Lijuan Zhang

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L21/76849 ,  H01L21/76898 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV.

Abstract translation: 本公开通常提供具有TSV的集成电路（IC）结构以及制造IC结构和TSV的方法。 根据本发明的实施例的IC结构可以包括嵌入在基板内的贯穿半导体通孔（TSV），TSV具有轴向端; 以及与TSV的轴向端接触的金属盖，其中金属帽具有比TSV更大的电阻率。

公开(公告)号：US09379007B2

公开(公告)日：2016-06-28

申请号：US13874509

申请日：2013-05-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Charles L. Arvin ,  Kenneth Bird ,  Charles C. Goldsmith ,  Sung K. Kang ,  Minhua Lu ,  Clare J. McCarthy ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Thomas A. Wassick

IPC: H01L21/321 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L21/7685 ,  H01L21/321 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0382 ,  H01L2224/0401 ,  H01L2224/11003 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/1131 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13562 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.

Abstract translation: 本发明的实施例包括无铅焊料互连结构和用于制造无铅互连结构的方法。 该结构包括具有最后金属层的半导体衬底，附着于最后金属层的铜基座，附着于铜基座的阻挡层，与阻挡层连接的阻挡保护层，以及与该阻挡层相接触的无铅焊料层 铜底座的最小一侧。

公开(公告)号：US09299847B2

公开(公告)日：2016-03-29

申请号：US14741169

申请日：2015-06-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qinghuang Lin ,  Minhua Lu ,  Robert L. Wisnieff

IPC: H01L23/48 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L23/532 ,  H01L21/283 ,  H01L51/00

CPC classification number: H01L29/78633 ,  H01L21/283 ,  H01L23/532 ,  H01L23/5329 ,  H01L27/1292 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869 ,  H01L51/0004 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a thin film transistor includes printing source, drain and channel regions on a passivated transparent substrate, forming a gate dielectric over the channel region and forming a gate conductor over the gate dielectric. A permanent antireflective coating is deposited over the source region, drain region and gate electrode, and an interlevel dielectric layer is formed over the permanent antireflective coating. Openings in the permanent antireflective coating and the interlevel dielectric layer are formed to provide contact holes to the source region, drain region and gate electrode. A conductor is deposited in the contact holes to electrically connect to the source region, drain region and gate electrode. Thin film transistor devices and other methods are also disclosed.