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1.发明授权System and method for processing a substrate using supercritical carbon dioxide processing 失效使用超临界二氧化碳处理处理衬底的系统和方法公开(公告)号：US07250374B2
公开(公告)日：2007-07-31
申请号：US10881456
申请日：2004-06-30
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31133 , H01L21/31111
摘要： A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.
摘要翻译： 一种用于在膜去除系统中处理衬底的方法和系统。 该方法包括将基板设置在膜去除系统的基板室中，其中基板具有在微特征的侧壁上包含电介质膜的微特征和覆盖电介质膜的一部分的光致抗蚀剂膜，并且执行 使用超临界CO 2 2处理以去除未被光致抗蚀剂膜覆盖的电介质膜的部分的第一膜去除工艺。 在第一膜去除工艺之后，可以进行使用超临界CO 2 2处理的第二膜去除工艺以除去光致抗蚀剂膜。 或者，可以使用湿法处理来执行第一膜去除工艺或第二膜去除工艺中的一种。
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2.发明申请System and method for processing a substrate using supercritical carbon dioxide processing 失效使用超临界二氧化碳处理处理衬底的系统和方法公开(公告)号：US20060003592A1
公开(公告)日：2006-01-05
申请号：US10881456
申请日：2004-06-30
申请人： Glenn Gale , Joseph Hillman , Gunilla Jacobson , Bentley Palmer
发明人： Glenn Gale , Joseph Hillman , Gunilla Jacobson , Bentley Palmer
IPC分类号： H01L21/467 , C23F1/00
CPC分类号： H01L21/31133 , H01L21/31111
摘要： A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.
摘要翻译： 一种用于在膜去除系统中处理衬底的方法和系统。 该方法包括将基板设置在膜去除系统的基板室中，其中基板具有在微特征的侧壁上包含电介质膜的微特征和覆盖电介质膜的一部分的光致抗蚀剂膜，并且执行 使用超临界CO 2 2处理以去除未被光致抗蚀剂膜覆盖的电介质膜的部分的第一膜去除工艺。 在第一膜去除工艺之后，可以进行使用超临界CO 2 2处理的第二膜去除工艺以除去光致抗蚀剂膜。 或者，可以使用湿法处理来执行第一膜去除工艺或第二膜去除工艺中的一种。
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3.发明申请Method for removing a residue from a substrate using supercritical carbon dioxide processing 审中-公开使用超临界二氧化碳处理从底物中除去残余物的方法公开(公告)号：US20060102204A1
公开(公告)日：2006-05-18
申请号：US10987594
申请日：2004-11-12
申请人： Gunilla Jacobson , Bentley Palmer , Shan Clark , Vijayakumar Ramachandrarao , Subramanyam Iyer , Robert Turkot
发明人： Gunilla Jacobson , Bentley Palmer , Shan Clark , Vijayakumar Ramachandrarao , Subramanyam Iyer , Robert Turkot
CPC分类号： B08B7/0021 , C23G5/00 , G03F7/427 , H01L21/02063 , H01L21/02101 , H01L21/31133
摘要： A method for cleaning a substrate containing a micro-feature having a residue thereon. The method includes treating the substrate with a supercritical carbon dioxide cleaning solution containing a peroxide to remove the residue from the micro-feature, where the supercritical carbon dioxide cleaning solution is maintained at a temperature between about 35° C. and about 80° C. According an embodiment of the invention, the supercritical carbon dioxide cleaning solution can further contain ozone. According to another embodiment of the invention, the substrate can be pre-treated with an ozone processing environment.
摘要翻译： 一种清洗含有残留物的微特征的基材的方法。 该方法包括用含有过氧化物的超临界二氧化碳清洗溶液处理底物以从微特征中除去残余物，其中超临界二氧化碳清洗溶液保持在约35℃至约80℃的温度。 根据本发明的一个实施方案，超临界二氧化碳清洗溶液可以进一步含有臭氧。 根据本发明的另一个实施例，可以用臭氧处理环境预处理衬底。
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4.发明申请System for removing a residue from a substrate using supercritical carbon dioxide processing 审中-公开使用超临界二氧化碳处理从底物中除去残余物的系统公开(公告)号：US20060102208A1
公开(公告)日：2006-05-18
申请号：US10987676
申请日：2004-11-12
申请人： Gunilla Jacobson , Bentley Palmer
发明人： Gunilla Jacobson , Bentley Palmer
IPC分类号： B08B3/02
CPC分类号： H01L21/02101 , B08B7/0021 , C23G5/00 , G03F7/427 , H01L21/02057
摘要： A film removal system for cleaning a substrate containing a micro-feature having a residue thereon. The film removal system includes a supercritical fluid processing system configured for treating the substrate witha supercritical carbon dioxide cleaning solution to remove the residue from the micro-feature, and for maintaining the supercritical carbon dioxide solution at a temperature between about 35° C. and about 80° C. during the treating. The film removal system further includes an ozone generator configured for providing an ozone processing environment for treating the substrate either prior to treating with the supercritical cleaning solution or concurrently therewith, and a controller configured for controlling the ozone generator and the supercritical fluid processing system.
摘要翻译： 一种用于清洁含有其上具有残留物的微特征的基材的膜去除系统。 膜去除系统包括超临界流体处理系统，其被配置用于用超临界二氧化碳清洗溶液处理底物以从微特征中除去残余物，并且用于将超临界二氧化碳溶液保持在约35℃至约 80℃。 薄膜去除系统还包括臭氧发生器，其构造成用于在用超临界清洗溶液处理或同时处理之前提供用于处理基底的臭氧处理环境;以及控制器，其被配置用于控制臭氧发生器和超临界流体处理系统。
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公开(公告)号：US07307019B2
公开(公告)日：2007-12-11
申请号：US10711649
申请日：2004-09-29
IPC分类号： H01L21/302
CPC分类号： H01L21/76826 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02343 , H01L21/31058 , H01L21/3127 , H01L21/32051 , H01L21/76814
摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。
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公开(公告)号：US20060255016A1
公开(公告)日：2006-11-16
申请号：US11489874
申请日：2006-07-19
申请人： Julia Svirchevski , Saket Chadda , Ismail Emesh , Thomas Laursen , Bentley Palmer , Sanjay Basak , Krishna Murella
发明人： Julia Svirchevski , Saket Chadda , Ismail Emesh , Thomas Laursen , Bentley Palmer , Sanjay Basak , Krishna Murella
IPC分类号： C03C15/00 , H01L21/461
CPC分类号： B24B27/0023 , B24B37/042 , B24B37/345 , H01L21/3212
摘要： A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.
摘要翻译： 提供了一种在工件上抛光金属层的方法，其中在金属层和抛光表面之间产生相对运动，并且其中金属层在其上具有防抛光膜。 首先对金属层进行预处理以基本上除去耐抛光膜。 接着，在抛光液的存在下，金属层在金属层与研磨面之间以低压被抛光。 预处理可以通过例如溅射来实现，在研磨抛光溶液的存在下抛光耐抛光膜，在膜和抛光表面之间以更高的压力抛光耐抛光膜，保持预处理步骤的温度 基本上在10摄氏度和30摄氏度之间，并化学去除膜。
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公开(公告)号：US20050121969A1
公开(公告)日：2005-06-09
申请号：US10729119
申请日：2003-12-04
申请人： Ismail Emesh , Bentley Palmer
发明人： Ismail Emesh , Bentley Palmer
摘要： A polishing fluid for a chemical-mechanical polishing process, an apparatus including the polishing fluid, and methods for making and using the polishing fluid, the fluid including a surfactant having an aliphatic structure, a buffer for maintaining the polishing fluid at a pH ranging between about 5 and about 14, and a chelating agent.
摘要翻译： 一种用于化学机械抛光工艺的抛光液，包括抛光液的设备，以及制造和使用抛光液的方法，所述流体包括具有脂族结构的表面活性剂，用于将抛光液保持在pH范围 约5至约14，和螯合剂。
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8.发明申请公开(公告)号：US20060068583A1
公开(公告)日：2006-03-30
申请号：US10711649
申请日：2004-09-29
IPC分类号： H01L21/4763
CPC分类号： H01L21/76826 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02343 , H01L21/31058 , H01L21/3127 , H01L21/32051 , H01L21/76814
摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。
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9.发明申请Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface 有权用于在工件表面上的材料的电化学沉积和平坦化的方法和装置公开(公告)号：US20050016681A1
公开(公告)日：2005-01-27
申请号：US10921666
申请日：2004-08-18
申请人： Ismail Emesh , Periya Gopalan , Phillip Rayer , Bentley Palmer
发明人： Ismail Emesh , Periya Gopalan , Phillip Rayer , Bentley Palmer
IPC分类号： B23H5/08 , C25D7/12 , C25D17/14 , C25F7/00 , H01L21/288 , H01L21/321 , C23F1/00
CPC分类号： C25D17/14 , B23H5/08 , C25D7/123 , C25D17/001 , C25F7/00 , H01L21/2885 , H01L21/32125
摘要： An electrochemical apparatus is provided which deposits material onto or removes material from the surface of a workpiece. The apparatus comprises a polishing pad and a platen which is in turn comprised of a first conductive layer in contact with the polishing pad and coupled to a first potential, a second conductive layer coupled to a second potential, and a first insulating layer disposed between the first and second conductive layers. At least one electrical contact is positioned within the polishing pad and is electrically coupled to the second conductive layer. A reservoir is provided which places an electrolyte solution in contact with the polishing pad and the workpiece. A carrier positions and/or presses the workpiece against the polishing pad.
摘要翻译： 提供了一种电化学装置，其将材料沉积在工件表面上或从工件表面去除材料。 该设备包括抛光垫和压板，该压板又由与抛光垫接触并与第一电位接触的第一导电层，耦合到第二电位的第二导电层以及设置在第二电位之间的第一绝缘层 第一和第二导电层。 至少一个电触点位于抛光垫内并电耦合到第二导电层。 提供一个储存器，其将电解质溶液与抛光垫和工件接触。 载体定位和/或将工件压靠在抛光垫上。
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