公开(公告)号：US5213877A

公开(公告)日：1993-05-25

申请号：US694715

申请日：1991-05-02

申请人： Hideaki Yoshida ,  Makoto Toriumi ,  Hirokazu Tanaka ,  Masao Umezawa ,  Michio Yuzawa ,  Yoshirou Kuromitsu

发明人： Hideaki Yoshida ,  Makoto Toriumi ,  Hirokazu Tanaka ,  Masao Umezawa ,  Michio Yuzawa ,  Yoshirou Kuromitsu

IPC分类号： C04B41/52 ,  C04B41/89 ,  H01L23/15

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  H01L23/15 ,  C04B2111/00844 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A ceramic substrate is used for an electric or electronic circuit, and comprises a ceramic foundation and at least one conductive island formed of aluminum or an aluminum alloy and bonded to one surface of the ceramic foundation for providing conductive paths to circuit components connected thereto, wherein the aluminum or aluminum-alloy island is brazed to the ceramic foundation with a brazing alloy selected from the group consisting of aluminum-silicon alloy, aluminum-germanium alloy, aluminum-silicon-magnesium alloy and aluminum-silicon-germanium alloy so that thermal stress between the ceramic foundation and the conductive island is taken up.

摘要翻译： 陶瓷基板用于电气或电子电路，并且包括陶瓷基座和由铝或铝合金形成的至少一个导电岛，并且结合到陶瓷基座的一个表面，以提供与连接到其的电路部件的导电路径，其中 将铝或铝合金岛用钎焊合金钎焊到陶瓷基体上，该钎焊合金选自铝 - 硅合金，铝 - 锗合金，铝 - 硅 - 镁合金和铝 - 硅 - 锗合金，使得热应力 介于陶瓷基座与导电岛之间。

公开(公告)号：US5130498A

公开(公告)日：1992-07-14

申请号：US594596

申请日：1990-10-09

申请人： Hideaki Yoshida ,  Yoshirou Kuromitsu ,  Makoto Toriumi ,  Michio Yuzawa

发明人： Hideaki Yoshida ,  Yoshirou Kuromitsu ,  Makoto Toriumi ,  Michio Yuzawa

IPC分类号： H01L23/373 ,  H01L23/498 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00 ,  H05K3/38

CPC分类号： H05K1/09 ,  H01L23/3735 ,  H01L23/49866 ,  H05K3/38 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/0061

摘要： A ceramic substrate is used for an electric or electronic circuit comprises a ceramic plate formed of a substance mainly composed of aluminum nitride, and conductive islands formed of aluminum or an aluminum alloy and bonded to one surface of the ceramic plate for providing conductive paths to circuit components connected thereto, wherein the aluminum islands decrease the total weight of the ceramic substrate and enhance a resistance against repetition of a thermal stress.

公开(公告)号：US20090229864A1

公开(公告)日：2009-09-17

申请号：US11720658

申请日：2006-09-15

申请人： Yoshirou Kuromitsu ,  Makoto Toriumi ,  Yoshiyuki Nagatomo ,  Hiroya Ishizuka ,  Youichiro Baba ,  Tomoyuki Watanabe ,  Takuya Yasui

发明人： Yoshirou Kuromitsu ,  Makoto Toriumi ,  Yoshiyuki Nagatomo ,  Hiroya Ishizuka ,  Youichiro Baba ,  Tomoyuki Watanabe ,  Takuya Yasui

IPC分类号： H05K7/20 ,  H05K1/03

CPC分类号： H01L23/3735 ,  H01L23/473 ,  H01L2224/29111 ,  H01L2224/32225 ,  H05K1/0271 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/0061 ,  H05K3/341 ,  H05K3/3463 ,  H05K2201/0352 ,  H05K2201/09736

摘要： An insulating circuit board includes an insulating plate, a circuit board joined to a first surface of the insulating plate, and a metal plate joined to a second surface of the insulating plate. The circuit board is formed from an Al alloy having a purity of 99.98% or more or pure Al, and the metal plate is formed from an Al alloy having a purity of 98.00% or more and 99.90% or less. The thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, the thickness (b) of the metal plate is 0.6 mm or more and 1.5 mm or less, and the thicknesses satisfy the expression of a/b≦1. An insulating circuit board having a cooling sink includes cooling sink joined via a second solder layer. The second solder layer contains Sn as its main component, and has a Young's modulus, 35 GPa or more, a 0.2% proof stress of, 30 MPa or more, and a tensile strength of, 40 MPa or more. The cooling sink is formed from, pure Al or an Al alloy.

摘要翻译： 绝缘电路板包括绝缘板，连接到绝缘板的第一表面的电路板和连接到绝缘板的第二表面的金属板。 电路板由纯度为99.98％以上的Al合金或纯Al形成，金属板由纯度为98.00％以上且99.90％以下的Al合金形成。 电路板的厚度（a）为0.2mm以上且0.8mm以下，金属板的厚度（b）为0.6mm以上且1.5mm以下，厚度满足a / b <= 1。 具有冷却槽的绝缘电路板包括通过第二焊料层接合的冷却水槽。 第二焊料层含有Sn作为其主要成分，杨氏模量为35GPa以上，0.2％屈服应力为30MPa以上，拉伸强度为40MPa以上。 冷却槽由纯Al或Al合金形成。

公开(公告)号：US5096768A

公开(公告)日：1992-03-17

申请号：US474904

申请日：1990-02-05

申请人： Yoshirou Kuromitsu ,  Hideaki Yoshida ,  Toshiyuki Nagase ,  Hiroto Uchida ,  Tadaharu Tanaka ,  Yoshio Kanda ,  Kenji Morinaga

发明人： Yoshirou Kuromitsu ,  Hideaki Yoshida ,  Toshiyuki Nagase ,  Hiroto Uchida ,  Tadaharu Tanaka ,  Yoshio Kanda ,  Kenji Morinaga

IPC分类号： H01L23/15 ,  H01L23/31

CPC分类号： H01L23/3135 ,  H01L23/15 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  Y10S428/901 ,  Y10T428/24917

摘要： An insulating substrate is used for fabrication of a thick film circuit and comprises a foundation of aluminum nitride and a surface film structure provided on the foundation, in which the foundation contains at least one oxidizing agent selected from the group consisting of an yttrium oxide and a calcium oxide ranging from 0.1% to 10% by weight for enhancing a stiffness of the foundation, and in which the surface film structure is of the multi-level surface film structure having a lower surface film of an aluminum oxide rapidly grown on the foundation in the presence of the oxidizing agent and an upper surface film containing a silicon oxide and a substance selected from the group consisting of a zirconium oxide, a titanium oxide and a boron oxide for enhancing the resistivity against a firing operation.

公开(公告)号：US5087509A

公开(公告)日：1992-02-11

申请号：US524936

申请日：1990-05-18

申请人： Yoshirou Kuromitsu ,  Hideaki Yoshida ,  Toshiyuki Nagase ,  Tadaharu Tanaka ,  Yoshio Kanda

发明人： Yoshirou Kuromitsu ,  Hideaki Yoshida ,  Toshiyuki Nagase ,  Tadaharu Tanaka ,  Yoshio Kanda

IPC分类号： H01L23/15 ,  H01L25/16 ,  H05K3/38

CPC分类号： H01L23/15 ,  H01L25/16 ,  H05K3/38 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/19105 ,  Y10S428/901 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An insulating substrate is used for fabrication of a thick film circuit provided with a conductive pattern made from a paste containing glass frits, and comprises a foundation containing an aluminum nitride and incidental impurities, and a multi-level surface film structure provided between the foundation and the conductive pattern and having a lower surface film of an aluminum oxide provided on a surface of the foundation, an intermediate surface film provided on the lower surface film and formed of a substance having a relatively small acidity and an upper surface film provided on the intermediate surface film and formed of a substance having a relatively large acidity, in which the substance with the large acidity rapidly reacts with the frits in a firing stage for enhancing the adhesion of the conductive pattern but the substance with the relatively small acidity restricts the consumption thereof, so that the total thickness of the multi-level film structure is decrased and, accordingly, the heat radiation capability is improved.

公开(公告)号：US09414512B2

公开(公告)日：2016-08-09

申请号：US13503126

申请日：2010-10-19

申请人： Yoshiyuki Nagatomo ,  Kazuhiro Akiyama ,  Nobuyuki Terasaki ,  Yoshirou Kuromitsu

发明人： Yoshiyuki Nagatomo ,  Kazuhiro Akiyama ,  Hiroshi Tonomura ,  Nobuyuki Terasaki ,  Yoshirou Kuromitsu

IPC分类号： H05K7/02 ,  H05K13/00 ,  H05K7/20 ,  H01L23/373 ,  H01L23/473 ,  C04B35/645 ,  C04B37/02 ,  H01L21/48

CPC分类号： H05K7/02 ,  C04B35/645 ,  C04B37/021 ,  C04B37/026 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2237/12 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/55 ,  C04B2237/58 ,  C04B2237/60 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/86 ,  H01L21/4882 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/473 ,  H01L2224/32225 ,  H05K7/2039 ,  H05K13/00 ,  Y10T29/49002

摘要： Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

摘要翻译： 提供了一种功率模块基板，其包括陶瓷基板和包含铝或铝合金的金属板，并且其被堆叠并结合在陶瓷基板的表面上，其中一个或多个选自Ag，Zn，Ge的附加元素 ，Mg，Ca，Ga和Li固溶在金属板中，金属板中与陶瓷基板界面附近的Ag浓度大于或等于0.05质量％且小于或等于 等于10质量％，或者与陶瓷基板的界面附近的金属板中的Zn，Ge，Mg，Ca，Ga和Li的总浓度大于等于0.01质量％ 以上5质量％以下。

公开(公告)号：US09066433B2

公开(公告)日：2015-06-23

申请号：US14238097

申请日：2012-08-10

申请人： Yoshirou Kuromitsu ,  Yoshiyuki Nagatomo ,  Nobuyuki Terasaki ,  Toshio Sakamoto ,  Kazunari Maki ,  Hiroyuki Mori ,  Isao Arai

发明人： Yoshirou Kuromitsu ,  Yoshiyuki Nagatomo ,  Nobuyuki Terasaki ,  Toshio Sakamoto ,  Kazunari Maki ,  Hiroyuki Mori ,  Isao Arai

IPC分类号： H01L23/10 ,  H01L23/34 ,  H05K3/10 ,  H01L23/373 ,  H05K1/09 ,  H05K3/38 ,  H05K1/02 ,  C04B35/645 ,  C04B37/02 ,  H05K1/03 ,  H05K3/00 ,  H01L23/00

CPC分类号： H05K3/103 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/262 ,  B23K35/3006 ,  C04B35/645 ,  C04B37/021 ,  C04B37/025 ,  C04B37/026 ,  C04B2237/064 ,  C04B2237/121 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/54 ,  C04B2237/60 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  C22C9/00 ,  C22C13/00 ,  C22C21/00 ,  H01L23/3735 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/83455 ,  H01L2924/01322 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/0061 ,  H05K3/38 ,  Y10T29/49155 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01029 ,  H01L2924/00

摘要： A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

摘要翻译： 功率模块基板包括绝缘基板和形成在绝缘基板的一个表面上的电路层。 电路层通过将第一铜板接合到绝缘基板的一个表面上而形成。 在接合之前，第一铜板具有在碱土金属元素，过渡金属元素和稀土元素中至少含有1〜100摩尔ppm的一种或多种的组合物，或100〜 1000摩尔ppm的硼，其余为铜和不可避免的杂质。

公开(公告)号：US20140192486A1

公开(公告)日：2014-07-10

申请号：US14238097

申请日：2012-08-10

申请人： Yoshirou Kuromitsu ,  Yoshiyuki Nagatomo ,  Nobuyuki Terasaki ,  Toshio Sakamoto ,  Kazunari Maki ,  Hiroyuki Mori ,  Isao Arai

发明人： Yoshirou Kuromitsu ,  Yoshiyuki Nagatomo ,  Nobuyuki Terasaki ,  Toshio Sakamoto ,  Kazunari Maki ,  Hiroyuki Mori ,  Isao Arai

IPC分类号： H05K1/09 ,  H05K1/02 ,  H05K3/10

CPC分类号： H05K3/103 ,  B23K35/0222 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/262 ,  B23K35/3006 ,  C04B35/645 ,  C04B37/021 ,  C04B37/025 ,  C04B37/026 ,  C04B2237/064 ,  C04B2237/121 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/54 ,  C04B2237/60 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  C22C9/00 ,  C22C13/00 ,  C22C21/00 ,  H01L23/3735 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/83455 ,  H01L2924/01322 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/0061 ,  H05K3/38 ,  Y10T29/49155 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01029 ,  H01L2924/00

摘要： A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

摘要翻译： 功率模块基板包括绝缘基板和形成在绝缘基板的一个表面上的电路层。 电路层通过将第一铜板接合到绝缘基板的一个表面上而形成。 在接合之前，第一铜板具有在碱土金属元素，过渡金属元素和稀土元素中至少含有1〜100摩尔ppm的一种或多种的组合物，或100〜 1000摩尔ppm的硼，其余为铜和不可避免的杂质。

公开(公告)号：US06821616B1

公开(公告)日：2004-11-23

申请号：US09457743

申请日：1999-12-10

申请人： Hideaki Sakurai ,  Yukiya Yamashita ,  Yoshirou Kuromitsu

发明人： Hideaki Sakurai ,  Yukiya Yamashita ,  Yoshirou Kuromitsu

IPC分类号： B32B904

CPC分类号： C03C17/3452 ,  C03C2218/32 ,  C03C2218/355 ,  Y10T428/26 ,  Y10T428/265

摘要： The present invention provides a protecting film capable of preventing deterioration in adhesion and matching to a substrate (dielectric layer), and deterioration in electric insulation. The protecting film includes a film body composed of MgO or the like which is inhibited from reacting with CO2 gas and H2O gas in air to prevent degeneration of MgO or the like into MgCO3 and Mg(OH)2, etc. harmful to FPD. The film body is formed on the surface of the substrate, and the fluoride layer is formed on the surface of the film body. The fluoride layer is represented by MOXFY (M is Mg, Ca, Sr, Ba, an alkali earth complex metal, a rare earth metal, or a complex metal of an alkali earth metal and a rare earth metal, 0≦X

摘要翻译： 本发明提供能够防止粘合性劣化和与基板（电介质层）匹配的保护膜以及电绝缘性的劣化。 保护膜包括由MgO等构成的膜体，其被抑制与空气中的CO 2气体和H 2 O气体反应，以防止MgO等变为对FPD有害的MgCO 3和Mg（OH）2等。 在基材的表面上形成膜体，并且在膜体的表面上形成氟化物层。 氟化物层由MOXFY（M是Mg，Ca，Sr，Ba，碱土金属络合物，稀土金属或碱土金属和稀土金属的复合金属，0 <= X 2 ，0

公开(公告)号：US5780162A

公开(公告)日：1998-07-14

申请号：US489677

申请日：1995-06-13

申请人： Seiji Toyoda ,  Yoshirou Kuromitsu ,  Kunio Sugamura ,  Akira Nakabayashi

发明人： Seiji Toyoda ,  Yoshirou Kuromitsu ,  Kunio Sugamura ,  Akira Nakabayashi

IPC分类号： H01L21/48 ,  H01L23/15 ,  B32B15/00

CPC分类号： H01L21/481 ,  H01L23/15 ,  H01L2924/0002

摘要： An aluminum nitride (AlN) substrate comprising an AIN sinter, an Al.sub.2 O.sub.3 layer provided on the sinter, and a glass-mixed Al.sub.2 O.sub.3 layer which is provided on the Al.sub.2 O.sub.3 layer and contains Al.sub.2 O.sub.3 and glass mixed therewith, preferably with an oxide particle-dispersed glass layer and a main glass layer provided on the glass-mixed Al.sub.2 O.sub.3 layer. The AlN substrate has heat dissipation properties closer to those of AlN itself, does not cause generation of air bubbles at the junction interface between the AlN sinter and the glass-containing layer, and has excellent surface smoothness and corrosion resistance. The very fine conductive layer, etc. may be readily and firmly formed on the substrate in a stable manner.

摘要翻译： 包含AlN烧结体，设置在烧结体上的Al 2 O 3层的氮化铝（AlN）衬底以及设置在Al 2 O 3层上并含有Al 2 O 3和玻璃的玻璃混合Al 2 O 3层，优选与氧化物粒子分散玻璃 层和设置在玻璃混合Al 2 O 3层上的主玻璃层。 AlN衬底具有更接近于AlN本身的散热性能，不会在AlN烧结体和含玻璃层之间的接合界面处产生气泡，并且具有优异的表面平滑性和耐腐蚀性。 非常细的导电层等可以以稳定的方式容易且牢固地形成在基板上。