利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.039 秒)

    Method and apparatus for programming antifuse elements using combined AC and DC electric fields
    7.
    发明授权
    Method and apparatus for programming antifuse elements using combined AC and DC electric fields 失效
    使用组合的交流和直流电场编程反熔丝元件的方法和装置

    公开(公告)号：US5444290A

    公开(公告)日：1995-08-22

    申请号：US249524

    申请日：1994-05-26

    申请人： Carlos A. Paz De Araujo ,  Larry D. McMillan ,  Joseph D. Cuchiaro

    发明人： Carlos A. Paz De Araujo ,  Larry D. McMillan ,  Joseph D. Cuchiaro

    IPC分类号： G11C17/16 ,  H01L27/115 ,  H01L27/02

    CPC分类号： H01L27/11502 ,  G11C17/16

    摘要： An antifuse element has a dielectric layer comprising materials whose dielectric constant increases in the presence of a DC electric field, such as a ferroelectric. An applied AC electric field and a DC electric field breaks down the dielectric material to form a conductive filament. The AC electric field causes the physical reorientation of the electric dipole of the molecules in the ferroelectric material which creates heat within the ferroelectric material. The DC electric field enhances the heating effect of the AC electric field by enlarging the electric dipole of the ferroelectric molecules. The synergy of the two electric fields permits programming antifuse elements of the present invention by applying DC electric fields as low as 2 volts amplitude.

    摘要翻译： 反熔丝元件具有介电层，该电介质层包含介电常数在存在直流电场的情况下增加的材料，例如铁电体。 施加的交流电场和直流电场分解电介质材料以形成导电细丝。 交流电场导致在铁电材料中产生热量的铁电材料中的分子的电偶极子的物理重定向。 直流电场通过放大铁电体分子的电偶极增强交流电场的加热效果。 两个电场的协同作用允许通过施加低至2伏的DC电场来编程本发明的反熔丝元件。

    Non-volatile memory
    10.
    发明授权
    Non-volatile memory 失效
    非易失性存储器

    公开(公告)号：US5406510A

    公开(公告)日：1995-04-11

    申请号：US92233

    申请日：1993-07-15

    申请人： Takashi Mihara ,  Carlos A. Paz De Araujo ,  Larry D. McMillan

    发明人： Takashi Mihara ,  Carlos A. Paz De Araujo ,  Larry D. McMillan

    IPC分类号： G11C11/41 ,  G11C11/22 ,  G11C17/04 ,  H01L27/10 ,  H03K19/173

    CPC分类号： G11C11/22

    摘要： A non-volatile memory includes a constant voltage source, a bit line, a memory cell having a first ferroelectric capacitor connected between the bit line and the constant voltage source, a source of a reference voltage, and a latch connected between the bit line and the reference voltage. The latch drives the bit line to the same logic state as the ferroelectric capacitor to read and rewrite the capacitor in a single operation. The reference voltage is provided by a ferroelectric dummy capacitor having an area smaller than the area of the first capacitor but greater than 1/2 the area of the first capacitor.

    摘要翻译： 非易失性存储器包括恒压源，位线，具有连接在位线和恒压源之间的第一铁电电容器的存储单元，参考电压源和连接在位线和 参考电压。 锁存器将位线驱动到与铁电电容器相同的逻辑状态，以在单个操作中读取和重写电容器。 参考电压由具有小于第一电容器的面积但大于第一电容器的面积的1/2的铁电虚拟电容器提供。