公开(公告)号：US20250112175A1

公开(公告)日：2025-04-03

申请号：US18477638

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Jesse C. Jones ,  Yosef Kornbluth ,  Mitchell Page ,  Soham Agarwal ,  Fanyi Zhu ,  Shuren Qu ,  Hanyu Song ,  Srinivas V. Pietambaram ,  Yonggang Li ,  Bai Nie ,  Nicholas Haehn ,  Astitva Tripathi ,  Mohamed R. Saber ,  Sheng Li ,  Pratyush Mishra ,  Benjamin T. Duong ,  Kari Hernandez ,  Praveen Sreeramagiri ,  Yi Li ,  Ibrahim El Khatib ,  Whitney Bryks ,  Mahdi Mohammadighaleni ,  Joshua Stacey ,  Travis Palmer ,  Gang Duan ,  Jeremy Ecton ,  Suddhasattwa Nad ,  Haobo Chen ,  Robin Shea McRee ,  Mohammad Mamunur Rahman

IPC: H01L23/00 ,  H01L23/13 ,  H01L23/15 ,  H01L25/065

Abstract: Various techniques for edge stress reduction in glass cores and related devices and methods are disclosed. In one example, a microelectronic assembly includes a glass core having a bottom surface, a top surface opposite the bottom surface, and one or more sidewalls extending between the bottom surface and the top surface, and further includes a panel of an organic material, wherein the glass core is embedded within the panel. In another example, a microelectronic assembly includes a glass core as in the first example, where an angle between a portion of an individual sidewall and one of the bottom surface or the top surface is greater than 90 degrees. In yet another example, a microelectronic assembly includes a glass core as in the first example, and further includes a pattern of a material on one of the one or more sidewalls.

公开(公告)号：US11605867B2

公开(公告)日：2023-03-14

申请号：US17344715

申请日：2021-06-10

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Jeremy D. Ecton ,  Aleksandar Aleksov ,  Kristof Darmawikarta ,  Yonggang Li ,  Dilan Seneviratne

IPC: H01P1/208 ,  H01P1/20 ,  H01P7/10 ,  H01L23/66 ,  H01P3/16 ,  H01L21/768 ,  H01P11/00 ,  H01L21/288

Abstract: A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

公开(公告)号：US20220093520A1

公开(公告)日：2022-03-24

申请号：US17026703

申请日：2020-09-21

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Aleksandar Aleksov ,  Brandon C. Marin ,  Yonggang Li ,  Leonel Arana ,  Suddhasattwa Nad ,  Haobo Chen ,  Tarek Ibrahim

IPC: H01L23/538 ,  H05K1/11 ,  H01L21/768

Abstract: Conductive routes for an electronic substrate may be fabricated by forming an opening in a material, using existing laser drilling or lithography tools and materials, followed by selectively plating a metal on the sidewalls of the opening. The processes of the present description may result in significantly higher patterning resolution or feature scaling (up to 2× improvement in patterning density/resolution). In addition to improved patterning resolution, the embodiments of the present description may also result in higher aspect ratios of the conductive routes, which can result in improved signaling, reduced latency, and improved yield.

公开(公告)号：US10290557B2

公开(公告)日：2019-05-14

申请号：US15549970

申请日：2015-03-09

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Trina Ghosh Dastidar ,  Dilan Seneviratne ,  Yonggang Li ,  Sirisha Chava

IPC: H05K3/10 ,  H01L23/14 ,  H05K3/06 ,  H05K3/18 ,  H01L23/498 ,  H01L21/48

Abstract: Embodiments of the present disclosure describe selective metallization of an integrated circuit (IC) substrate. In one embodiment, an integrated circuit (IC) substrate may include a dielectric material and metal crystals having a polyhedral shape dispersed in the dielectric material and bonded with a ligand that is to ablate when exposed to laser light such that the metal crystals having the ablated ligand are activated to provide a catalyst for selective electroless deposition of a metal. Other embodiments may be described and/or claimed.

公开(公告)号：US09716084B2

公开(公告)日：2017-07-25

申请号：US15208502

申请日：2016-07-12

Applicant: INTEL CORPORATION

Inventor： Digvijay A. Raorane ,  Yonggang Li ,  Rahul N. Manepalli ,  Javier Soto Gonzalez

IPC: H01L25/00 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L21/683 ,  H01L23/522 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31

CPC classification number: H01L25/50 ,  H01L21/4846 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05169 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13005 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/8385 ,  H01L2224/9222 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/40501 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/00 ,  H01L2924/014

Abstract: Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with three-dimensional (3D) integration of multiple dies, as well as corresponding fabrication methods and systems incorporating such 3D IC package assemblies. A bumpless build-up layer (BBUL) package substrate may be formed on a first die, such as a microprocessor die. Laser radiation may be used to form an opening in a die backside film to expose TSV pads on the back side of the first die. A second die, such as a memory die stack, may be coupled to the first die by die interconnects formed between corresponding TSVs of the first and second dies. Underfill material may be applied to fill some or all of any remaining gap between the first and second dies, and/or an encapsulant may be applied over the second die and/or package substrate. Other embodiments may be described and/or claimed.

公开(公告)号：US20150171067A1

公开(公告)日：2015-06-18

申请号：US14636016

申请日：2015-03-02

Applicant: INTEL CORPORATION

Inventor： Digvijay A. Raorane ,  Yonggang Li ,  Rahul N. Manepalli ,  Javier Soto Gonzalez

IPC: H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L25/50 ,  H01L21/4846 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05169 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13005 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/8385 ,  H01L2224/9222 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/40501 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/00 ,  H01L2924/014

Abstract: Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with three-dimensional (3D) integration of multiple dies, as well as corresponding fabrication methods and systems incorporating such 3D IC package assemblies. A bumpless build-up layer (BBUL) package substrate may be formed on a first die, such as a microprocessor die. Laser radiation may be used to form an opening in a die backside film to expose TSV pads on the back side of the first die. A second die, such as a memory die stack, may be coupled to the first die by die interconnects formed between corresponding TSVs of the first and second dies. Underfill material may be applied to fill some or all of any remaining gap between the first and second dies, and/or an encapsulant may be applied over the second die and/or package substrate. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及具有多个管芯的三维（3D）集成的集成电路（IC）封装组件，以及包含这种3D IC封装组件的相应制造方法和系统。 可以在诸如微处理器管芯的第一管芯上形成无凸起的堆积层（BBUL）封装衬底。 可以使用激光辐射在模具背面膜中形成开口，以暴露第一裸片背面的TSV焊盘。 诸如存储器管芯堆叠的第二管芯可以通过在第一和第二管芯的对应TSV之间形成的管芯互连而耦合到第一管芯。 可以施加底部填充材料以填充第一和第二管芯之间的任何剩余间隙中的一些或全部，和/或可以在第二管芯和/或封装衬底上施加密封剂。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20240219653A1

公开(公告)日：2024-07-04

申请号：US18091430

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Yonggang Li ,  Bai Nie

IPC: G02B6/42

CPC classification number: G02B6/4212

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a photonic die and at least one optical fiber. Devices and methods are shown that include an optical coupler and one or more correction regions to align a beam between the photonic die and the optical fiber.

公开(公告)号：US11348718B2

公开(公告)日：2022-05-31

申请号：US16022894

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Kristof Darmawikarta ,  Gang Duan ,  Yonggang Li ,  Sameer Paital

IPC: H01F27/26 ,  H01F27/42 ,  H01L21/768 ,  H01L23/64 ,  H01F27/25 ,  H01F27/245

Abstract: Described are microelectronic devices including an embedded microelectronic package for use as an integrated voltage regulator with a microelectronic system. The microelectronic package can include a substrate and a magnetic foil. The substrate can define at least one layer having one or more of electrically conductive elements separated by a dielectric material. The magnetic foil can have ferromagnetic alloy ribbons and can be embedded within the substrate adjacent to the one or more of electrically conductive elements. The magnetic foil can be positioned to interface with and be spaced from the one or more of electrically conductive element.

公开(公告)号：US11081768B2

公开(公告)日：2021-08-03

申请号：US16421989

申请日：2019-05-24

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Jeremy D. Ecton ,  Aleksandar Aleksov ,  Kristof Darmawikarta ,  Yonggang Li ,  Dilan Seneviratne

IPC: H01P1/208 ,  H01P1/20 ,  H01P7/10 ,  H01L23/66 ,  H01P3/16 ,  H01L21/768 ,  H01P11/00 ,  H01L21/288

Abstract: A filter structure comprises a first dielectric buildup film. A second dielectric buildup film is over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst. A trench is in the second dielectric buildup film. A metal is selectively plated to sidewalls of the trench based at least in part on the metallization catalyst. A low-loss buildup film is over the metal that substantially fills the trench.

公开(公告)号：US10910327B2

公开(公告)日：2021-02-02

申请号：US16369681

申请日：2019-03-29

Applicant: Intel Corporation

Inventor： Yonggang Li ,  Brandon C Marin ,  Vahidreza Parichehreh ,  Jeremy D Ecton

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: A package for an electronic device may include a first layer. The first layer may include a first dielectric material. The first layer may have a planar first surface. The first layer may have a variable thickness. A second layer may be coupled to the first layer. The second layer may include a second dielectric material and may have a planar second surface. The second layer may have a variable thickness. A seam may be located at an interface between the first layer and the second layer, and the seam may have an undulating profile. The package may include at least one electrical trace, for example located in the first layer or the second layer.