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1.发明授权Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element 失效3-5族氮化物半导体多层基板，第3-5族氮化物半导体独立减渣剂的制造方法以及半导体元件公开(公告)号：US08053811B2
公开(公告)日：2011-11-08
申请号：US11920563
申请日：2006-05-02
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01S2304/12
摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。
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2.发明申请Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Manufacturing Group 3-5 Nitride Semiconductor Free-Standing Subtrate, and Semiconductor Element 失效第3-5族氮化物半导体多层基板，制造方法3-5氮化硅半导体自由放电，半导体元件公开(公告)号：US20090085165A1
公开(公告)日：2009-04-02
申请号：US11920563
申请日：2006-05-02
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01S2304/12
摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。
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3.发明申请Free-Standing Substrate, Method for Producing the Same and Semiconductor Light-Emitting Device 审中-公开自由基底材，其制造方法和半导体发光装置公开(公告)号：US20090008652A1
公开(公告)日：2009-01-08
申请号：US11908539
申请日：2006-03-20
CPC分类号： C23C16/30 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： The present invention provides a free-standing substrate, a method for producing the same and a semiconductor light-emitting device. The free-standing substrate comprises a semiconductor layer and inorganic particles, wherein the inorganic particles are included in the semiconductor layer. The method for producing a free-standing substrate comprises the steps of: (a) placing inorganic particles on a substrate, (b) growing a semiconductor layer thereon, and (c) separating the semiconductor layer from the substrate, in that order. The semiconductor light-emitting device comprises the free-standing substrate, a conductive layer, a light-emitting device, and electrodes.
摘要翻译： 本发明提供一种自立式基板，其制造方法和半导体发光装置。 独立基板包括半导体层和无机颗粒，其中无机颗粒包括在半导体层中。 制造独立基板的方法包括以下步骤：（a）将无机颗粒放置在基板上，（b）在其上生长半导体层，以及（c）依次将半导体层与基板分离。 半导体发光器件包括独立的衬底，导电层，发光器件和电极。
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公开(公告)号：US20090236629A1
公开(公告)日：2009-09-24
申请号：US11922497
申请日：2006-07-05
IPC分类号： H01L33/00 , H01L21/308 , H01L29/06
CPC分类号： H01L21/3065 , H01L33/007 , H01L33/22
摘要： The present invention provides a substrate and a semiconductor light emitting device. Convexes having a curved surface are formed on the substrate. The semiconductor light emitting device comprises a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.
摘要翻译： 本发明提供了一种基板和半导体发光器件。 在基板上形成具有曲面的凸部。 半导体发光器件包括其上形成有弯曲表面的凸起的衬底和在衬底上的半导体层。
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5.发明申请Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device 失效用于化合物半导体发光器件的外延衬底，其制造方法和发光器件公开(公告)号：US20060267035A1
公开(公告)日：2006-11-30
申请号：US11495748
申请日：2006-07-31
IPC分类号： H01L33/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的AlGaN：Mg层作为中间层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。
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6.发明授权3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same 有权3-5族化合物半导体，其制造方法和使用其的化合物半导体元件公开(公告)号：US07229493B2
公开(公告)日：2007-06-12
申请号：US10352934
申请日：2003-01-29
申请人： Yoshihiko Tsuchida , Yoshinobu Ono
发明人： Yoshihiko Tsuchida , Yoshinobu Ono
IPC分类号： H01L21/265
CPC分类号： H01L21/02579 , C30B25/02 , C30B29/40 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/3245 , Y10S117/906
摘要： Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.
摘要翻译： 提供了通过对氮化物类型3-5族化合物进行热处理而具有优异的p型氮化物类型3-5族化合物半导体，其具有诸如对电极金属的低接触电阻，低欧姆性等优异的电性能 在特定浓度的含氢气体气氛中掺杂p型掺杂剂的半导体。
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公开(公告)号：US07205577B2
公开(公告)日：2007-04-17
申请号：US10162404
申请日：2002-06-05
IPC分类号： H01L33/00
摘要： A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.
摘要翻译： 包括具有晶格失配的两层的界面的组3-5化合物半导体，膜厚度为25nm以上的中间层和量子阱层。 化合物半导体具有高结晶度和高质量，并且适用于发光二极管。
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公开(公告)号：US07098484B2
公开(公告)日：2006-08-29
申请号：US10614062
申请日：2003-07-08
IPC分类号： H01L33/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
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9.发明授权Method for producing and epitaxial substrate for compound semiconductor light-emitting device 失效用于化合物半导体发光器件的制造和外延衬底的方法公开(公告)号：US07459326B2
公开(公告)日：2008-12-02
申请号：US11495748
申请日：2006-07-31
IPC分类号： H01L21/00
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译： 为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。 第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的作为中间层的AlGaN：Mg层 。 通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构， 提高空穴注入发光层结构的效率，从而提高发光效率。
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10.发明申请Method for Producing Group 3-5 Nitride Semiconductor and Method for Producing Light-Emitting Device 有权生产3-5号氮化硅半导体的方法和发光装置的制造方法公开(公告)号：US20090117675A1
公开(公告)日：2009-05-07
申请号：US11992653
申请日：2006-09-27
IPC分类号： H01L21/365
CPC分类号： C23C16/301 , C23C16/01 , C30B25/183 , C30B29/403 , C30B33/00 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： The present invention provides a method for producing a group 3-5 nitride semiconductor and a method for producing a light emitting device. The method for producing a group 3-5 nitride semiconductor, comprises the steps of (i), (ii), (iii) and (iv) in this order: (i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.
摘要翻译： 本发明提供一种3-5族氮化物半导体的制造方法及其制造方法。 制备3-5族氮化物半导体的方法包括以下步骤：（i），（ii），（iii）和（iv））：（i）将无机颗粒置于基材上，（ii） 半导体层，以及（iii）通过用光照射衬底和半导体层之间的界面来分离衬底和半导体层。
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