公开(公告)号：US20100271112A1

公开(公告)日：2010-10-28

申请号：US12742221

申请日：2008-11-04

申请人： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

发明人： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

IPC分类号： H03K3/01 ,  H01L29/78

CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

摘要： Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.

摘要翻译： 公开了自旋晶体管和操作自旋晶体管的方法。 所公开的自旋晶体管包括由选择性地通过具有特定方向的自旋极化电子的磁性材料形成的沟道，由磁性材料形成的源极，漏极和栅电极。 当预定电压施加到栅电极时，沟道选择性地通过具有特定方向的自旋极化电子，因此自旋晶体管选择性地导通。

公开(公告)号：US08269293B2

公开(公告)日：2012-09-18

申请号：US12742221

申请日：2008-11-04

申请人： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

发明人： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

摘要： Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.

摘要翻译： 公开了自旋晶体管和操作自旋晶体管的方法。 所公开的自旋晶体管包括由选择性地通过具有特定方向的自旋极化电子的磁性材料形成的沟道，由磁性材料形成的源极，漏极和栅电极。 当预定电压施加到栅电极时，沟道选择性地通过具有特定方向的自旋极化电子，因此自旋晶体管选择性地导通。

公开(公告)号：US20110221482A1

公开(公告)日：2011-09-15

申请号：US12923857

申请日：2010-10-12

申请人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-Kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

发明人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-Kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

IPC分类号： H03K3/01 ,  H03K17/00

CPC分类号： H03K17/6871 ,  H02M1/08 ,  H02M3/158 ,  H02M3/337 ,  H02M2001/0074 ,  H03K2217/0081

摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.

摘要翻译： 提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。 开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通 阈值电压。

公开(公告)号：US20110215378A1

公开(公告)日：2011-09-08

申请号：US12929492

申请日：2011-01-28

申请人： In-Jun Hwang ,  Jong-Seob Kim ,  Hyuk-Soon Choi ,  Ki-Ha Hong ,  Jai-Kwang Shin ,  Jae-Joon Oh

发明人： In-Jun Hwang ,  Jong-Seob Kim ,  Hyuk-Soon Choi ,  Ki-Ha Hong ,  Jai-Kwang Shin ,  Jae-Joon Oh

IPC分类号： H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7786

摘要： High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

摘要翻译： 表现出双重缺陷的高电子迁移率晶体管（HEMT）及其制造方法。 HEMT包括设置在具有不同极性的多个半导体层上的源电极，栅极电极和漏电极。 在源电极和漏电极之间存在双耗尽区。 多个半导体层包括上材料层，中间材料层和下材料层，并且中间材料层的极性与上材料层和下材料层的极性不同。

公开(公告)号：US20050087139A1

公开(公告)日：2005-04-28

申请号：US10969928

申请日：2004-10-22

申请人： Woo-Seok Kim ,  Seung-Ki Chae ,  Do-Young Kam ,  Kwang-Myung Lee ,  Jai-Hyung Won ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Sang-Jean Jeon

发明人： Woo-Seok Kim ,  Seung-Ki Chae ,  Do-Young Kam ,  Kwang-Myung Lee ,  Jai-Hyung Won ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Sang-Jean Jeon

IPC分类号： H04B1/40 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.

摘要翻译： 天线包括具有基本相同形状的分支。 分支对称地围绕中心点设置并且沿着其几何中心与中心点重合的至少两个同心图案延伸。 这些分支各自包括完全位于同心图案内的图案形成部分，以及在图案形成部分之间延伸并连接图案形成部分的至少一个连接部分。 在每个分支的端部设置用于允许在分支上施加电压的输入/输出端子。

公开(公告)号：US07081710B2

公开(公告)日：2006-07-25

申请号：US10844804

申请日：2004-05-13

申请人： Andrei-B. Petrin ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Seong-Gu Kim ,  Ji-Hyun Hur

发明人： Andrei-B. Petrin ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Seong-Gu Kim ,  Ji-Hyun Hur

IPC分类号： H01J7/24

CPC分类号： H01J37/32009 ,  H01J37/32192 ,  H01J37/32678 ,  H05H1/18

摘要： An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.

摘要翻译： 提供了一种用于产生等离子体的基本等离子体源。 在基本等离子体源中，第一和第二磁体成形为中空圆柱体，并且第二磁体围绕第一磁体，用于在第一和第二磁体之间形成磁性陷阱。 引导件向第一和第二磁体之间的空间提供微波。

公开(公告)号：US20050001554A1

公开(公告)日：2005-01-06

申请号：US10844804

申请日：2004-05-13

申请人： Andrel-B. Petrin ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Seong-Gu Kim ,  Ji-Hyun Hur

发明人： Andrel-B. Petrin ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Seong-Gu Kim ,  Ji-Hyun Hur

IPC分类号： H05H1/16 ,  H01J37/32 ,  H05H1/18 ,  C23F1/00 ,  B44C1/22 ,  C25B9/00 ,  H01L21/306

CPC分类号： H01J37/32009 ,  H01J37/32192 ,  H01J37/32678 ,  H05H1/18

摘要： An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.

摘要翻译： 提供了一种用于产生等离子体的基本等离子体源。 在基本等离子体源中，第一和第二磁体成形为中空圆柱体，并且第二磁体围绕第一磁体，用于在第一和第二磁体之间形成磁性陷阱。 引导件向第一和第二磁体之间的空间提供微波。

公开(公告)号：US07410552B2

公开(公告)日：2008-08-12

申请号：US11007878

申请日：2004-12-09

申请人： Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

发明人： Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32678

摘要： An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.

摘要翻译： 电子回旋共振设备通过在减压环境中将处理气体和微波能量施加到其中具有晶片的真空室中来产生等离子体。 该设备包括安装在真空室的最上端的喇叭天线组件，用于将从高频发生器提供的微波能量辐射到真空室中。 喇叭天线能够在长度方向上伸长和缩回以改变喇叭天线的喇叭角。 该设备设置有固定天线和多个移动天线以配置喇叭天线组件，从而由于移动天线的位移而能够控制喇叭天线中的喇叭角。 因此，能够有效地控制等离子体室内的微波能量的辐射的均匀性。

公开(公告)号：US20050160986A1

公开(公告)日：2005-07-28

申请号：US11007878

申请日：2004-12-09

申请人： Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

发明人： Ji-Hyun Hur ,  Jai-Kwang Shin ,  Jae-Joon Oh

IPC分类号： H01L21/3065 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32678

摘要： An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.

摘要翻译： 电子回旋共振设备通过在减压环境中将处理气体和微波能量施加到其中具有晶片的真空室中来产生等离子体。 该设备包括安装在真空室的最上端的喇叭天线组件，用于将从高频发生器提供的微波能量辐射到真空室中。 喇叭天线能够在长度方向上伸长和缩回以改变喇叭天线的喇叭角。 该设备设置有固定天线和多个移动天线以配置喇叭天线组件，从而由于移动天线的位移而能够控制喇叭天线中的喇叭角。 因此，能够有效地控制等离子体室内的微波能量的辐射的均匀性。

公开(公告)号：US20050109462A1

公开(公告)日：2005-05-26

申请号：US10909467

申请日：2004-08-02

申请人： Young-Dong Lee ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Seong-Gu Kim

发明人： Young-Dong Lee ,  Jai-Kwang Shin ,  Jae-Joon Oh ,  Seong-Gu Kim

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23F1/00 ,  H01J37/32 ,  H01L21/306

CPC分类号： H01J37/321

摘要： Disclosed is an apparatus for generating inductively-coupled plasma (ICP). The ICP generation apparatus includes a source region where an ICP antenna coil is mounted, the ICP antenna coil generating inductive electric fields for generating plasma and having a serially-connected concentric circle-type structure, the total number of windings of the ICP antenna coil being greater than 2, the ICP antenna coil having a structure in which at least one circular winging closest to the center of the concentric circle is wound in a direction opposite to that of the other windings; a sealed chamber in which a predetermined process is performed on a sample placed on a chuck therein through a reaction between plasma ions and reactive radicals; and a radio frequency (RF) power supply for providing RF electric power of a predetermined frequency to the ICP antenna coil in the source region.

摘要翻译： 公开了一种用于产生电感耦合等离子体（ICP）的装置。 ICP发生装置包括安装有ICP天线线圈的源极区域，ICP天线线圈产生用于产生等离子体的感应电场并具有串联连接的同心圆形结构，ICP天线线圈的总线圈数为 大于2，ICP天线线圈具有其中最靠近同心圆的中心的至少一个圆形翼沿与其它绕组的方向相反的方向缠绕的结构; 密封室，其中通过等离子体离子和反应性基团之间的反应对放置在其上的卡盘上的样品进行预定处理; 以及用于向源极区域中的ICP天线线圈提供预定频率的RF电力的射频（RF）电源。