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    Method of forming pattern
    1.
    发明授权
    Method of forming pattern 有权
    形成图案的方法

    公开(公告)号：US08481246B2

    公开(公告)日：2013-07-09

    申请号：US13430185

    申请日：2012-03-26

    申请人： Koji Asakawa ,  Shigeki Hattori ,  Ryota Kitagawa

    发明人： Koji Asakawa ,  Shigeki Hattori ,  Ryota Kitagawa

    IPC分类号： G03C5/00

    CPC分类号： G03F7/16 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392

    摘要： According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.

    摘要翻译： 根据一个实施方案，形成图案的方法包括将嵌段共聚物施加到基材上，所述嵌段共聚物包括第一嵌段和第二嵌段，所述第一嵌段包括聚丙烯酸酯或聚甲基丙烯酸酯，所述侧链具有脂环族烃基或 引入包含叔碳的烃基，第二嵌段包括在α-位置被烃或卤素取代的聚苯乙烯，使嵌段共聚物相分离，用能量束照射嵌段共聚物以分解第二嵌段 并且用显影剂移除第二块以形成第一块的图案。

    METHOD OF FORMING PATTERN
    3.
    发明申请
    METHOD OF FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号：US20120244474A1

    公开(公告)日：2012-09-27

    申请号：US13430185

    申请日：2012-03-26

    申请人： Koji ASAKAWA ,  Shigeki Hattori ,  Ryota Kitagawa

    发明人： Koji ASAKAWA ,  Shigeki Hattori ,  Ryota Kitagawa

    IPC分类号： G03F7/20

    CPC分类号： G03F7/16 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392

    摘要： According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.

    摘要翻译： 根据一个实施方案，形成图案的方法包括将嵌段共聚物施加到基材上，所述嵌段共聚物包括第一嵌段和第二嵌段，所述第一嵌段包括聚丙烯酸酯或聚甲基丙烯酸酯，所述侧链具有脂环族烃基或 导入包含叔碳的烃基，第二嵌段包括在α-位被烃或卤素取代的聚苯乙烯，使嵌段共聚物相分离，用能量束照射嵌段共聚物以分解第二嵌段 并且用显影剂移除第二块以形成第一块的图案。

    METHOD OF FORMING PATTERN
    4.
    发明申请
    METHOD OF FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号：US20120238109A1

    公开(公告)日：2012-09-20

    申请号：US13429901

    申请日：2012-03-26

    申请人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

    发明人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

    IPC分类号： H01L21/312

    CPC分类号： G03F7/165 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337 ,  H01L21/306

    摘要： According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

    摘要翻译： 根据一个实施例，形成图案的方法包括在衬底上形成单层，选择性地将单层暴露于能量束并选择性地修改曝光部分以形成暴露部分和未曝光部分的图案，形成嵌段共聚物层包括第一和 基于单层的暴露部分和未曝光部分的图案，使嵌段共聚物层相分离以形成嵌段共聚物层的第一和第二嵌段链的图案。

    Nonvolatile semiconductor memory device
    6.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08890234B2

    公开(公告)日：2014-11-18

    申请号：US13721860

    申请日：2012-12-20

    申请人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    发明人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L51/05 ,  H01L27/115 ,  H01L51/00

    CPC分类号： H01L27/11582 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/75 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926 ,  H01L51/0078 ,  H01L51/0591

    摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

    摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有 所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基 卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

    PATTERN FORMING METHOD
    8.
    发明申请
    PATTERN FORMING METHOD 有权
    图案形成方法

    公开(公告)号：US20120127454A1

    公开(公告)日：2012-05-24

    申请号：US13239449

    申请日：2011-09-22

    申请人： Hiroko NAKAMURA ,  Koji Asakawa ,  Shigeki Hattori ,  Satoshi Tanaka ,  Toshiya Kotani

    发明人： Hiroko NAKAMURA ,  Koji Asakawa ,  Shigeki Hattori ,  Satoshi Tanaka ,  Toshiya Kotani

    IPC分类号： G03B27/32

    CPC分类号： G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00

    摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

    摘要翻译： 根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。 存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。 存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案， 区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。 用左图案蚀刻该胶片作为掩模。

    Method of forming pattern
    9.
    发明授权
    Method of forming pattern 有权
    形成图案的方法

    公开(公告)号：US08808973B2

    公开(公告)日：2014-08-19

    申请号：US13402400

    申请日：2012-02-22

    申请人： Satoshi Mikoshiba ,  Koji Asakawa ,  Hiroko Nakamura ,  Shigeki Hattori ,  Atsushi Hieno ,  Tsukasa Azuma ,  Yuriko Seino ,  Masahiro Kanno

    发明人： Satoshi Mikoshiba ,  Koji Asakawa ,  Hiroko Nakamura ,  Shigeki Hattori ,  Atsushi Hieno ,  Tsukasa Azuma ,  Yuriko Seino ,  Masahiro Kanno

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0757 ,  G03F7/165 ,  G03F7/26 ,  H01L21/3086

    摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

    摘要翻译： 根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域 在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二 分别在第一和第二区域上的微相分离结构。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    10.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20140061762A1

    公开(公告)日：2014-03-06

    申请号：US13721860

    申请日：2012-12-20

    申请人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    发明人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11582 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/75 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926 ,  H01L51/0078 ,  H01L51/0591

    摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

    摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在所述半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有 所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基 卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。