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1.发明申请公开(公告)号：US20090321246A1
公开(公告)日：2009-12-31
申请号：US12190864
申请日：2008-08-13
IPC分类号： C23C14/34
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/34 , C23C14/568 , C23C14/5853 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer.
摘要翻译： 提供一种制造隧道磁阻元件的方法和装置，该隧道磁阻元件在RA中不显示很大的色散并且能够在低RA中获得高MR比。 制造隧道磁阻元件的方法包括第一铁磁层，由金属氧化物构成的隧道势垒层和第二铁磁层，其中制造隧道势垒层的步骤包括进行第一金属层的成膜，同时掺杂 氧，然后在氧掺杂的第一金属层上进行氧化处理以在氧化物层上形成氧化物层和第二金属层的膜形成。
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公开(公告)号：US20100200394A1
公开(公告)日：2010-08-12
申请号：US12719920
申请日：2010-03-09
IPC分类号： C23C14/34
CPC分类号： C23C14/225 , C23C14/081 , C23C14/345 , H01J37/32091 , H01J37/32174 , H01J37/32706 , H01J37/34 , H01L43/12
摘要： In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected to the electrode for adjusting the potential of the substrate on the substrate holder.
摘要翻译： 为了始终将基板上的自偏压自动调整为恒定值，并且形成具有优异的工艺再现性的高品质绝缘膜，根据本发明的真空薄膜形成装置包括：高频 具有室的溅射装置，用于抽空室内的抽气装置，用于向室内供给气体的气体引入装置，设置在室内的基板保持架以及设置在基板保持架内的电极; 以及至少一个真空处理室，其可以选自包括物理气相沉积（PVD）室，化学气相沉积（CVD）室，物理蚀刻室，化学蚀刻室，基板加热室，基板 冷却室，氧化处理室，还原处理室和灰化室，其中所述高频溅射装置还包括电连接到所述电极的可变阻抗机构，用于调节所述基板保持器上的所述基板的电位。
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公开(公告)号：US20110253037A1
公开(公告)日：2011-10-20
申请号：US13093906
申请日：2011-04-26
CPC分类号： H01L21/67109 , C23C14/541 , G11C11/16 , H01L21/67115 , H01L21/67748 , H01L21/68742
摘要： The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber.
摘要翻译： 真空加热和冷却装置可以在保持高真空度的情况下在成膜处理之后快速地加热和冷却基板。 由于积聚而导致室内部件的温度升高受到抑制，基板间的温度变化也降低。 在一个实施例中，用于在真空中加热和冷却基板的加热和冷却装置包括：真空室; 辐射能源，其位于气氛侧的真空室处，用于发射加热光; 用于使来自辐射能源的加热光进入真空室的入射部分; 用于保持所述基板的基板保持部件; 以及基板转印机构，用于将由基板保持部件保持的基板以加热状态转印到靠近所述辐射能量源的加热位置，并将所述基板和所述基板保持部件以非加热状态转印到 远离辐射能源的非加热位置，其中基板保持构件具有用于将基板放置在其上的板形状，并且具有比用于使加热光进入真空室的入射部分大的外形。
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公开(公告)号：US20100080894A1
公开(公告)日：2010-04-01
申请号：US12551753
申请日：2009-09-01
申请人： Koji Tsunekawa , Yoshinori Nagamine
发明人： Koji Tsunekawa , Yoshinori Nagamine
IPC分类号： B05D5/12
CPC分类号： H01L27/222 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L27/228 , H01L43/08 , H01L43/12
摘要： The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.
摘要翻译： 本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。 在本发明的一个实施例中，使用溅射法在基板上沉积磁化固定层，磁化自由层和隧道势垒层的步骤中，沉积磁化固定层的步骤沉积含有Co原子的铁磁层 通过使用包含Co原子，Fe原子和B原子的第一靶的共溅射法，和与第一靶相同的B原子含量的第二靶，通过共溅射法。
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公开(公告)号：US09017535B2
公开(公告)日：2015-04-28
申请号：US12727316
申请日：2010-03-19
IPC分类号： C23C14/00 , C25B9/00 , C25B11/00 , C25B13/00 , C23C16/00 , C23C14/50 , C23C16/458 , C23C14/35 , H01J37/34 , C23C14/08 , C23C14/22 , C23C14/34 , H01L43/12
CPC分类号： C23C14/50 , C23C14/081 , C23C14/225 , C23C14/345 , C23C14/3464 , C23C14/352 , C23C16/4586 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01L43/12
摘要： Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.
摘要翻译： 通过使用控制高频溅射装置的自偏压的方法，提供了高质量的磁阻薄膜。 为了通过调整衬底电位来控制衬底的自偏压，根据本发明的高频溅射器件包括：腔室; 用于抽空腔室内部的排气装置; 气体引入装置，用于将气体供应到所述腔室中; 衬底保持器，其设置有衬底安装台; 旋转驱动装置，能够使基板保持架旋转; 设置有目标安装台的溅射阴极，并且被配置为使得所述目标安装台的表面不平行于所述基板安装台的表面; 设置在所述衬底保持器内的电极; 以及电连接到电极的可变阻抗机构，用于调节衬底保持器上的衬底电位。
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6.发明授权公开(公告)号：US08932438B2
公开(公告)日：2015-01-13
申请号：US12972823
申请日：2010-12-20
IPC分类号： C23C14/34 , G11B5/39 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/22 , G01R33/09 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/12 , G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
摘要翻译： 自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。 通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。
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7.发明授权公开(公告)号：US08367156B2
公开(公告)日：2013-02-05
申请号：US13177237
申请日：2011-07-06
IPC分类号： B05D5/12
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.
摘要翻译： 磁阻器件具有设置在第一铁磁层和第二铁磁层之间的MgO（氧化镁）层。 该器件通过在成膜室中形成MgO层的膜来制造。 对于氧化气体的吸气剂效果大的物质粘附到设置在用于形成MgO层的室中的部件的表面上。 具有较大吸气效果的物质是其氧气吸附能值为145kcal / mol以上的物质。 特别地，Ta（钽）作为构成磁阻器件的物质是优选的。
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8.发明申请METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD 审中-公开在制造方法中使用的磁阻元件和储存介质的制造方法公开(公告)号：US20110143460A1
公开(公告)日：2011-06-16
申请号：US13059464
申请日：2009-08-31
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , C23C14/081 , C23C14/225 , C23C14/3414 , C23C14/568 , H01L43/12
摘要： An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art.A method of manufacturing a magnetoresistance element includes a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer provided between the magnetization fixed layer and the magnetization free layer on a substrate. In the method, the tunnel barrier layer is formed by arranging a target that has a diameter smaller than that of the substrate, contains a magnesium oxide sintered body, and has a relative density 90% or more so as to be inclined with respect to a surface to be deposited of the substrate, and forming a magnesium oxide layer using a sputtering method while rotating the substrate.
摘要翻译： 本发明的实施例提供一种制造MR比高于现有技术的磁阻元件的方法。 制造磁阻元件的方法包括形成磁化固定层，磁化自由层和设置在基板上的磁化固定层和磁化自由层之间的隧道势垒层的步骤。 在该方法中，隧道势垒层通过配置直径小于基板的靶，含有氧化镁烧结体而形成，相对密度为90％以上，以相对于 表面沉积，并且在旋转衬底的同时使用溅射法形成氧化镁层。
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9.发明申请公开(公告)号：US20110139606A1
公开(公告)日：2011-06-16
申请号：US12972823
申请日：2010-12-20
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
摘要翻译： 自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。 通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。
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公开(公告)号：US20100078310A1
公开(公告)日：2010-04-01
申请号：US12483704
申请日：2009-06-12
申请人： Koji Tsunekawa , Yoshinori Nagamine
发明人： Koji Tsunekawa , Yoshinori Nagamine
IPC分类号： C23C14/34
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/12
摘要： The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.
摘要翻译： 本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。 在本发明的一个实施例中，使用溅射法在基板上沉积磁化固定层，磁化自由层和隧道势垒层的步骤中，沉积无磁化层的步骤沉积含有Co原子的铁磁层 通过使用包含Co原子，Fe原子和B原子的第一靶的共溅射法，和与第一靶相同的B原子含量的第二靶，通过共溅射法。
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