公开(公告)号：US20170330757A1

公开(公告)日：2017-11-16

申请号：US15594482

申请日：2017-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph EICHLER ,  Andre SOMERS ,  Harald KOENIG ,  Bernhard STOJETZ ,  Andreas LOEFFLER ,  Alfred LELL

IPC: H01L21/268 ,  H01L21/324 ,  H01L21/3105

CPC classification number: H01L27/1285 ,  H01L21/02104 ,  H01L21/02293 ,  H01L21/02365 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02636 ,  H01L21/02647 ,  H01L21/20 ,  H01L21/2022 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/3247 ,  H01L21/76248 ,  H01L21/76272 ,  H01L27/1281 ,  H01L33/007 ,  H01L33/025 ,  H01L33/08 ,  H01L33/12 ,  H01L2933/0016 ,  H01S5/2068 ,  H01S5/2077 ,  H01S5/222 ,  H01S5/223 ,  H01S2304/00

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US20190355768A1

公开(公告)日：2019-11-21

申请号：US16528307

申请日：2019-07-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph EICHLER ,  Andre SOMERS ,  Harald KOENIG ,  Bernhard STOJETZ ,  Andreas LOEFFLER ,  Alfred LELL

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/268 ,  H01L21/20 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/22 ,  H01L33/00 ,  H01L33/02

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US20170331257A1

公开(公告)日：2017-11-16

申请号：US15594397

申请日：2017-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph EICHLER ,  Andre SOMERS ,  Bernhard STOJETZ ,  Andreas LOEFFLER ,  Alfred LELL

IPC: H01S5/40 ,  H01S5/10 ,  H01L33/32 ,  H01L33/00 ,  H01S5/30 ,  H01L27/15

CPC classification number: H01S5/4087 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/325 ,  H01S5/026 ,  H01S5/1053 ,  H01S5/1096 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32341 ,  H01S2304/00

Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

公开(公告)号：US20170330996A1

公开(公告)日：2017-11-16

申请号：US15594519

申请日：2017-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alfred LELL ,  Andreas LOEFFLER ,  Christoph EICHLER ,  Bernhard STOJETZ ,  Andre SOMERS

IPC: H01L33/00 ,  H01S5/32 ,  H01L33/32 ,  H01L21/67 ,  H01S5/323 ,  H01L33/62

CPC classification number: H01L33/0025 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/26 ,  H01L33/32 ,  H01L33/62 ,  H01S5/026 ,  H01S5/1082 ,  H01S5/2036 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/227 ,  H01S5/3205 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2301/176 ,  H01S2301/18

Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).