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公开(公告)号：US3949387A
公开(公告)日：1976-04-06
申请号：US284512
申请日：1972-08-29
IPC分类号： G11C11/14 , G11B11/10 , G11B11/105 , G11B11/11 , G11C13/06 , G11C19/08 , H01F10/00 , H01F10/12 , H01F10/13
CPC分类号： G11B11/11 , G11B11/10 , G11B11/10504 , G11B11/10515 , G11B11/10517 , G11B11/10526 , G11B11/10545 , G11B11/10591 , G11C13/06 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F10/13 , H01F10/137
摘要： A beam addressable file using as a storage medium an amorphous magnetic composition having uniaxial anisotropy. The storage medium can be prepared in thin film or bulk form or as particles in a binder. The storage medium can be comprised of a single element or a multicomponent system where at least one of the components has an unpaired spin so that the composition has a net magnetic moment. The storage comosition exists in a microcrystalline structure (i.e., it has localized atomic ordering over a distance 25-100 angstroms) and also in a substantially amorphous structure (i.e., when the composition has localized atomic ordering only over distances less than 25 angstroms). Binary and ternary compositions, either alloys or compounds, are suitable. particularly good examples are combinations of rare earth elements and transition metal elements. The magnetic properties of these amorphous magnetic compositions are easily changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties. Either electron beams or light beams can be used to write information into the storage medium and optical readout is generally preferred. Curie point writing or compensation point writing is used.
摘要翻译： 使用具有单轴各向异性的非晶磁性组合物作为存储介质的光束可寻址文件。 存储介质可以以薄膜或本体形式或作为粘合剂中的颗粒制备。 存储介质可以由单个元件或多组分系统组成，其中至少一个组件具有不成对的纺丝，使得组合物具有净磁矩。 存储组合存在于微晶结构中（即，其在25-100埃的距离上具有局部原子排列），并且还存在于基本上非晶结构中（即，当组合物仅在小于25埃的距离处具有局部原子排列时）。 二元和三元组合物，合金或化合物都是合适的。 特别好的例子是稀土元素和过渡金属元素的组合。 这些非晶磁性组合物的磁性能在制造过程中或在制造之后容易改变，并且可以容易地掺杂组合物而不会不利地影响磁性能。 可以使用电子束或光束将信息写入存储介质，并且通常优选光学读出。 使用居里点写入或补偿点写入。
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公开(公告)号：US3965463A
公开(公告)日：1976-06-22
申请号：US581078
申请日：1975-05-27
CPC分类号： G02F1/0036 , G11B11/10 , G11B11/10582 , G11B11/10591 , G11C13/06 , G11C19/08 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F10/135 , G11C13/0004
摘要： Apparatus using amorphous magnetic compositions having uniaxial anisotropy include bubble domain apparatus, light modulating apparatus, permanent magnet systems, and tape and disc information handling systems. The amorphous magnetic composition can be prepared in thin film or bulk form or as particles in a binder. The anisotropy can be parallel to the plane of a film of this material or perpendicular to the film plane. The amorphous material is comprised of a single element or is a multicomponent system where as at least one of the components has an unimpaired spin so that the composition has a net magnetic moment. The amorphous composition exists as a microcrystalline structure having localized atomic ordering over a distance 25-100 A, or as a substantially amorphous structure where localized atomic ordering is over distances less than 25A. Binary and ternary compositions, either alloys or compounds, are suitable. The magnetic properties of the compositions can be changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties.
摘要翻译： 使用具有单轴各向异性的非晶磁性组合物的装置包括气泡域装置，光调制装置，永磁体系统以及磁带和盘信息处理系统。 非晶磁性组合物可以以薄膜或本体形式或作为粘合剂中的颗粒制备。 各向异性可以平行于该材料的膜的平面或垂直于膜平面。 无定形材料由单一元件组成或是多组分系统，其中至少一个组分具有未受损的自旋，使得组合物具有净磁矩。 无定形组合物存在为在距离25-100A处具有局部原子排序的微晶结构，或者作为基本上非晶体结构，其中局部原子排序超过距离小于25A。 二元和三元组合物，合金或化合物都是合适的。 组合物的磁性能可以在制造期间或制造后改变，并且可以容易地掺杂组合物而不会不利地影响磁性。
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公开(公告)号：US4264813A
公开(公告)日：1981-04-28
申请号：US53590
申请日：1979-06-29
申请人： G. V. Chandrashekhar , Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino , James M. E. Harper
发明人： G. V. Chandrashekhar , Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino , James M. E. Harper
IPC分类号： B23K15/00 , H01J3/04 , H01J27/02 , H01J27/20 , H01J37/08 , H01L21/265 , H01L27/00 , B01D59/44 , H01J27/00
摘要： The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species.
摘要翻译： 本发明描述了能够产生较高密度离子电流的离子源。 离子源采用电偏置离子导体来从原子物质的储层供应离子。
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公开(公告)号：US4714831A
公开(公告)日：1987-12-22
申请号：US859102
申请日：1986-05-01
申请人： Gregory J. Clark , Praveen Chaudhari , Jerome J. Cuomo , Margaret A. Frisch , James L. Speidell
发明人： Gregory J. Clark , Praveen Chaudhari , Jerome J. Cuomo , Margaret A. Frisch , James L. Speidell
CPC分类号： H01J37/04 , H01J49/488
摘要： A spherical grid for use in instrumentation comprising a rigid non-magnetic frame having a pattern of holes. Into each hole a flat wafer is placed, each wafer having etched therein holes defining the grid mesh. The frame maintains the geometric conformal shape allowing large units to be constructed.
摘要翻译： 用于仪器的球形网格，包括具有孔图案的刚性非磁性框架。 在每个孔中放置一个平坦的晶片，每个晶片在其中蚀刻有限定网格网格的孔。 框架保持几何适形形状，允许构建大型单元。
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公开(公告)号：US4250009A
公开(公告)日：1981-02-10
申请号：US40339
申请日：1979-05-18
CPC分类号： C23C14/46
摘要： An energetic particle beam is accelerated towards a sputtering target. The target is located at an angle to the path of the beam (although it need not be). The target material which is dislodged by the ion beam can be directed towards a substrate. The material is composed of atoms forming both positive and negative ions. The voltage difference between the target and the substrate can be adjusted to be positive or negative so that either positive ions or negative ions can be accelerated to the substrate by means of adjusting the target-substrate voltage difference. In addition, means can be provided for collecting electrons included with the ions moving towards and away from the target. Such means can comprise a grid located adjacent to the target. It is also possible that electrons can be collected by means of an electric field confining structure which permits the ions to pass through while the electrons are deflected. Techniques. used elsewhere to separate electrons from ions have included bending beams to fit through apertures and use of magnetic grids to deflect electrons differentially. In both cases, the degree of deflection of ions is far different because the mass of an ion is large relative to the mass of an electron which makes separation easy. The advantage here is that the sputter deposition makes it possible to deposit positive and negative ions alternately or in a desired graded mixture at an interface under gradually changing voltage control.
摘要翻译： 高能粒子束朝向溅射靶加速。 目标位于与梁的路径成一定角度（尽管不需要）。 通过离子束移动的目标材料可以被引向衬底。 该材料由形成正离子和负离子的原子组成。 可以将目标和衬底之间的电压差调整为正或负，以便通过调整目标衬底电压差来将正离子或负离子加速到衬底。 此外，可以提供用于收集包含在离开靶子和远离靶的离子中的电子的装置。 这种装置可以包括位于与目标相邻的网格。 也可以通过允许离子在电子被偏转的同时通过的电场约束结构来收集电子。 技巧 在其他地方使用离子分离电子的方法包括弯曲梁以适应穿孔，并使用磁栅来使电子差异化。 在这两种情况下，离子的偏转程度是非常不同的，因为离子的质量相对于电子的质量大，这使得分离变得容易。 这里的优点是，溅射沉积使得可以在逐渐变化的电压控制下交替地或者在期望的分级混合物在界面处沉积正离子和负离子。
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6.发明授权Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate 失效通过溅射从金属间化合物靶上蚀刻形成负金属离子，产生并列衬底的蚀刻
公开(公告)号：US4132614A
公开(公告)日：1979-01-02
申请号：US844541
申请日：1977-10-26
IPC分类号： C23F4/00 , H01J37/34 , H01L21/302 , H01L21/3065 , C23C15/00
CPC分类号： H01J37/3426 , H01J37/34
摘要： Bombardment some intermetallic compounds above a sufficient target voltage V.sub.o can be used for etching substrates. Etching a substrate located in an evacuated chamber involves bombardment of an intermetallic compound or alloy comprising for example Au, Pt, etc. and a metallic element such as Eu, La, Cs, etc. with ions so that a large flux of negative Au, Pt, etc. ions is produced which etches a substrate located nearby. Such bombardment is achieved by placing an Au, Pt, etc. intermetallic composition target in a sputtering chamber using an argon sputtering gas, located opposite from a substrate. A gold alloy or compound target can be SmAu, EuAu, LaAu, CsAu, etc. The target of Au, Pt, etc. and a rare earth element, etc. is bombarded by sputtering gas atoms excited by RF or D.C. energy, creating negative metal ions by sputtering. Instead of depositing upon the substrate, the negative ions cause a cascade of energetic sputtering gas atoms and metal atoms to etch the substrate surface directly beneath the target as outlined by ground shields. Outside that region negative ion and rare earth metals deposit on the substrate. Bombardment with an ion gun, neutral atoms or energetic particle sources or an ionic molecular source may produce negative ions. A use is ion milling. A target material is useful as a negative ion source of metal B in an intermetallic compound of metals A and B if A has ionization potential I.sub.A and B has electron affinity EA.sub.B such that I.sub.A -EA.sub.B > about 3.4 electron volts or if there is a electronegativity difference .DELTA.X greater than about 2.55.
摘要翻译： 超过足够目标电压Vo的一些金属间化合物可用于蚀刻基板。 蚀刻位于真空室中的衬底包括用离子轰击包含例如Au，Pt等的金属间化合物或合金以及诸如Eu，La，Cs等的金属元素，使得大量的Au， 产生Pt等离子，其蚀刻位于附近的衬底。 通过使用与衬底相对的氩气溅射气体将Au，Pt等金属间化合物靶放置在溅射室中来实现这种轰击。 金合金或复合靶可以是SmAu，EuAu，LaAu，CsAu等。通过由RF或DC能量激发的溅射气体原子轰击Au，Pt等稀土元素等的靶，产生负 金属离子溅射。 代替沉积在衬底上，负离子引起高能溅射气体原子和金属原子的级联来蚀刻目标正下方的衬底表面，如由接地屏蔽所概述的。 在该区域外，负离子和稀土金属沉积在基底上。 使用离子枪，中性原子或能量粒子源或离子分子源进行轰击可能产生负离子。 使用离子铣削。 如果A具有电离电位IA和B具有电子亲和力EAB使得IA-EAB>约3.4电子伏特或如果存在电负性，则目标材料可用作金属A和B的金属间化合物中金属B的负离子源 差异DELTA X大于2.55。
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公开(公告)号：US06582823B1
公开(公告)日：2003-06-24
申请号：US09304422
申请日：1999-04-30
IPC分类号： B32B2736
CPC分类号： C23C16/30 , G02B1/105 , G02B1/14 , G02B1/18 , Y02T50/67 , Y10T428/31507 , Y10T428/31536 , Y10T428/31612 , Y10T428/31663 , Y10T428/31667
摘要： A substantially optically transparent article such as a lens having a wear-resistant surface comprises a substantially optically transparent polymeric substrate (e.g., a polycarbonate or polymethyl methacrylate substrate), and having a surface portion. A hard antiabrasive interconnecting layer is formed on the surface portion (typically by vacuum deposition and preferably by plasma-enhanced chemical vapor deposition), and a lubricious hydrophobic coating layer is bonded to the interconnecting layer. The lubricious hydrophobic coating layer, together with the hard antiabrasive interconnecting layer, form a wear-resistant surface on the substrate. The lubricious coating layer is formed from a hydrophobic organic lubricant such as a perfluoropolyether, a fatty acid, or a fatty acid esters. Methods of making such articles are also disclosed.
摘要翻译： 基本上光学透明的制品，例如具有耐磨表面的透镜，包括基本上光学透明的聚合物基材（例如，聚碳酸酯或聚甲基丙烯酸甲酯基材），并具有表面部分。 在表面部分（通常通过真空沉积，优选通过等离子体增强化学气相沉积）形成硬的耐磨互连层，并且将润滑的疏水涂层粘合到互连层。 润滑的疏水涂层与硬质耐磨互连层一起在基材上形成耐磨表面。 润滑涂层由疏水性有机润滑剂如全氟聚醚，脂肪酸或脂肪酸酯形成。 还公开了制造这种制品的方法。
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公开(公告)号：US5585673A
公开(公告)日：1996-12-17
申请号：US346208
申请日：1994-11-22
IPC分类号： H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L29/43
CPC分类号： H01L21/76843 , H01L21/76838 , H01L21/7684 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76877 , H01L23/49866 , H01L23/53223 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , Y10S148/015 , Y10S257/915 , Y10S438/959
摘要： Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.
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公开(公告)号：US5241040A
公开(公告)日：1993-08-31
申请号：US551716
申请日：1990-07-11
申请人： Jerome J. Cuomo , Jeffrey D. Gelorme , Michael Hatzakis, Jr. , David A. Lewis , Jane M. Shaw , Stanley J. Whitehair
发明人： Jerome J. Cuomo , Jeffrey D. Gelorme , Michael Hatzakis, Jr. , David A. Lewis , Jane M. Shaw , Stanley J. Whitehair
CPC分类号： H05B6/705 , B01J19/126 , C08G73/1025 , G01N22/00 , H05B6/68 , B01J2219/00191 , B01J2219/1215 , H05K1/0346 , H05K3/4644 , Y02B40/143 , Y10T428/31681 , Y10T428/31721
摘要： A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction. Processing time has been reduced thirty fold as compared to conventional thermal methods.
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10.发明授权Hollow cathode enhanced plasma for high rate reactive ion etching and deposition 失效用于高速反应离子蚀刻和沉积的空心阴极增强等离子体
公开(公告)号：US4637853A
公开(公告)日：1987-01-20
申请号：US759762
申请日：1985-07-29
IPC分类号： H05K3/08 , C23C14/34 , C23F1/04 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01J37/32082 , C23C14/34 , H01J37/32541 , H01J37/32596 , H01J2237/3341
摘要： A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.According to a further embodiment, the hollow cathode electrode structure is characterized by a single plate having a plurality of cylindrical chambers or holes therein, each hole producing a hollow cathode glow when the system is energized. The aspect ratio (largest dimension of the chamber cross-section/depth of the chamber) for this embodiment should be at least 1.5.
摘要翻译： 用于RF-RIE溅射/蚀刻系统的金属中空阴极电极结构。 电极定义了关键的纵横比空心阴极体积。 根据本发明的一个实施例，电极结构可以由两厘米间隔开的两个紧密间隔的金属元件组成。 元件通过支撑件在其外缘周围电连接和结构连接。 在改进的中空阴极电极结构和通过合适的匹配网络包含它的真空室之间施加RF电压。 从电极外部的点向系统供应等离子体气体，并且使用合适的泵送系统来将操作压力保持在0.1至400毫托范围内。 然后将溅射的样品放置在内部电极表面中用于溅射/蚀刻。 长宽比（元件之一的最长尺寸/元件之间的间隔）应至少为4.根据另一实施例，中空阴极电极结构的特征在于具有多个圆柱形腔室或孔中的单个板， 当系统通电时，每个孔产生空心阴极辉光。 该实施例的纵横比（室的横截面的最大尺寸/室的深度）应至少为1.5。
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