公开(公告)号：US11683065B2

公开(公告)日：2023-06-20

申请号：US17150610

申请日：2021-01-15

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  George Pete Imthurn ,  Anton Arriagada ,  Sinan Goktepeli

IPC: H04B1/44 ,  H03K17/687

CPC classification number: H04B1/44 ,  H03K17/6874

Abstract: A radio frequency (RF) switch includes switch transistors coupled in series. The RF switch includes a distributed gate bias network coupled to gate electrodes of the switch transistors. The RF switch also includes a distributed body bias network coupled to body electrodes of the switch transistors.

公开(公告)号：US10896958B2

公开(公告)日：2021-01-19

申请号：US16690454

申请日：2019-11-21

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  George Pete Imthurn ,  Yun Han Chu ,  Qingqing Liang

IPC: H01L29/10 ,  H01L21/285 ,  H01L21/74 ,  H01L21/84 ,  H01L27/12 ,  H01L29/45

Abstract: In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.

公开(公告)号：US10559520B2

公开(公告)日：2020-02-11

申请号：US15975434

申请日：2018-05-09

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  George Pete Imthurn ,  Stephen Alan Fanelli

IPC: H01L23/48 ,  H01L21/762 ,  H01L23/522 ,  H01L21/768 ,  H01L21/8234 ,  H01L25/065 ,  H01L25/11 ,  H01L49/02

Abstract: A radio frequency integrated circuit (RFIC) includes a bulk semiconductor die. The RFIC also includes a first active/passive device on a first-side of the bulk semiconductor die, and a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die. The RFIC also includes a contact layer on the second-side of the bulk semiconductor die. The RFIC further includes a second-side dielectric layer on the contact layer. The first deep trench isolation region may extend through the contact layer and into the second-side dielectric layer.

公开(公告)号：US10475816B2

公开(公告)日：2019-11-12

申请号：US16000501

申请日：2018-06-05

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Sinan Goktepeli ,  Jarred Moore

IPC: H01L27/12 ,  H01L23/66 ,  H01L29/06

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET), including a source region, a drain region, a body region, and a gate. The RFIC also includes a body bypass resistor coupled between the gate and the body region. The RFIC further includes a gate isolation resistor coupled between the gate and the body region. The RFIC also includes a diode coupled between the body bypass resistor and the gate isolation resistor.

公开(公告)号：US10418465B1

公开(公告)日：2019-09-17

申请号：US15969986

申请日：2018-05-03

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Francesco Carobolante ,  Sinan Goktepeli ,  George Imthurn ,  Fabio Alessio Marino ,  Narasimhulu Kanike

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/788 ,  H01L27/11556 ,  G11C16/34 ,  G11C16/04 ,  H01L27/105 ,  H01L27/11 ,  H01L29/78

Abstract: Certain aspects of the present disclosure provide a memory device. One example memory device generally includes a first semiconductor region having a first region, a second region, and a third region, the second region being between the first region and the third region and having a different doping type than the first region and the third region. In certain aspects, the memory device also includes a first non-insulative region, a first insulative region being disposed between the first non-insulative region and the first semiconductor region. In certain aspects, the memory device may include a second non-insulative region, and a second insulative region disposed between the second region and the second non-insulative region, wherein the first insulative region and the second insulative region are disposed adjacent to opposite sides of the second region.

公开(公告)号：US09917062B1

公开(公告)日：2018-03-13

申请号：US15266972

申请日：2016-09-15

Applicant: Qualcomm Incorporated

Inventor： Sinan Goktepeli

IPC: H01L23/544 ,  H01L27/12 ,  H01L21/683 ,  H01L21/84 ,  H01L21/762 ,  H01L27/13

CPC classification number: H01L23/544 ,  H01L21/6835 ,  H01L21/76224 ,  H01L21/84 ,  H01L21/845 ,  H01L27/0694 ,  H01L27/1203 ,  H01L27/1211 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/6835

Abstract: An integrated circuit structure may include an alignment column on a front-side surface of an isolation layer. The alignment column may extend through a backside surface opposite the front-side surface of the isolation layer. The integrated circuit structure may also include front-side transistors on the front-side surface of the isolation layer. The integrated circuit structure may further include backside transistors on the backside surface of the isolation layer. A first front-side transistor is aligned with a first backside transistor according to the alignment column.

公开(公告)号：US11081559B1

公开(公告)日：2021-08-03

申请号：US16778546

申请日：2020-01-31

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Sivakumar Kumarasamy ,  George Pete Imthurn ,  Sinan Goktepeli

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/06 ,  H01L29/49 ,  H01L29/40 ,  H01L29/66

Abstract: Certain aspects of the present disclosure generally relate to a semiconductor device having a backside gate contact. An example semiconductor device generally includes a transistor disposed above a substrate, wherein the transistor comprises a gate region, a channel region, a source region, and a drain region and wherein the gate region is disposed adjacent to the channel region. The semiconductor device further includes a backside gate contact that is electrically coupled to a bottom surface of the gate region and that extends below a bottom surface of the substrate.

公开(公告)号：US10600910B2

公开(公告)日：2020-03-24

申请号：US16156729

申请日：2018-10-10

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Ravi Pramod Kumar Vedula ,  Sivakumar Kumarasamy ,  George Pete Imthurn ,  Sinan Goktepeli

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L21/762 ,  H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/08

Abstract: An integrated circuit is described. The integrated circuit includes a metal oxide semiconductor field effect transistor (MOSFET). The MOSFET is on a first surface of an insulator layer of the integrated circuit. The MOSFET including a source region, a drain region, and a front gate. The MOSFET also includes an extended drain region between the drain region and a well proximate the front gate. The integrated circuit also includes back gates on a second surface opposite the first surface of the insulator layer. The back gates are overlapped by the extended drain region.

公开(公告)号：US10083963B2

公开(公告)日：2018-09-25

申请号：US15387501

申请日：2016-12-21

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Jean Richaud

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L21/768 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01L27/0924 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L21/84 ,  H01L21/845 ,  H01L23/481 ,  H01L23/485 ,  H01L27/0694 ,  H01L27/092 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0676 ,  H01L29/42392

Abstract: An integrated circuit device may include a p-type metal oxide semiconductor (PMOS) transistor supported by a backside of an isolation layer. The integrated circuit device may also include an n-type metal oxide semiconductor (NMOS) transistor supported by a front-side of the isolation layer, opposite the backside. The integrated circuit device may further include a shared contact extending through the isolation layer and electrically coupling a first terminal of the PMOS transistor to the first terminal of the NMOS transistor.

公开(公告)号：US10002838B2

公开(公告)日：2018-06-19

申请号：US15189893

申请日：2016-06-22

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli

IPC: H01L21/70 ,  H01L23/66 ,  H01L41/09 ,  H01L27/146 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/66 ,  H01L23/481 ,  H01L23/5225 ,  H01L27/1203 ,  H01L27/1464 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78648 ,  H01L41/09 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2924/1421

Abstract: An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active device is biased by the back-bias metallization. The integrated RF circuit structure may further include a handle substrate on a front-side dielectric layer on the active device.