公开(公告)号：US07308011B2

公开(公告)日：2007-12-11

申请号：US10617892

申请日：2003-07-11

申请人： Ralph H. Johnson ,  Gilberto Morales

发明人： Ralph H. Johnson ,  Gilberto Morales

IPC分类号： H01S5/00

CPC分类号： H01S5/18391 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A single mode VCSEL including a substrate having a lower surface and an upper surface, a bottom electrical contact disposed along the lower surface of the substrate, a lower mirror portion disposed upon the upper surface of the substrate, an active region disposed upon the lower mirror portion, an upper mirror portion disposed upon the active region, an equipotential layer disposed upon the upper mirror portion, an insulating layer interposed between the upper mirror portion and the equipotential layer and adapted to form an aperture therebetween, and an upper contact portion disposed upon the equipotential layer outside the perimeter of the aperture.

摘要翻译： 单模VCSEL，其包括具有下表面和上表面的基板，沿着基板的下表面设置的底部电触点，设置在基板的上表面上的下反射镜部分，设置在下反射镜上的有源区域 设置在有源区上的上镜部分，设置在上反射镜部分上的等电位层，插入在上反射镜部分和等电位层之间并适于在其间形成孔的绝缘层，以及设置在上反射镜部分上的上接触部分 孔径周边外的等电位层。

公开(公告)号：US07221691B2

公开(公告)日：2007-05-22

申请号：US10617290

申请日：2003-07-10

申请人： Ralph H. Johnson ,  Gilberto Morales

发明人： Ralph H. Johnson ,  Gilberto Morales

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/18391 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active region can include multiple layers and may be formed to be have substantially isotropic conductivity. The layers in the upper mirror can include a lightly doped DBR layer, a heavily doped second layer including an isolation region, and a third heavily doped DBR layer. The active region may include conduction layers, which may be periodically doped, to improve conductivity and reduce free carrier absorption.

摘要翻译： 一种用于提供单模VCSEL（垂直腔表面发射激光）的系统和方法。 下反射镜形成在基板上。 在下反射镜上形成包括一个或多个量子阱的有源区。 形成在有源区上的上反射镜可以包括多个层，并且可以形成为具有基本上各向同性的导电性。 上反射镜中的层可以包括轻掺杂DBR层，包括隔离区的重掺杂第二层和第三重掺杂DBR层。 有源区可以包括导电层，其可以是周期性掺杂的，以改善导电性并减少自由载流子吸收。

公开(公告)号：US06905900B1

公开(公告)日：2005-06-14

申请号：US09724820

申请日：2000-11-28

申请人： Ralph H. Johnson ,  Gilberto Morales

发明人： Ralph H. Johnson ,  Gilberto Morales

IPC分类号： H01S5/028 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01L21/00 ,  H01S5/187

CPC分类号： H01S5/18391 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component (100) is disclosed, comprising a semiconductor substrate (102) having a lower surface and an upper surface, a bottom electrical contact (104) disposed along the lower surface of the substrate, a lower mirror (106) formed of n-type material and disposed upon the upper surface of the substrate, an active region (108) having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror (110) formed from isotropic material and disposed upon the active region, an equipotential layer (112) disposed upon the upper mirror portion, a first upper electrical contact (120) disposed upon the equipotential layer, a second upper electrical contact (122) disposed upon the equipotential layer at a particular distance (124) from the first upper electrical contact, a first isolation region (126) disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region (128) disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer (114, 116) interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture (118) of smaller dimension than the particular distance between the first and second upper contacts.

摘要翻译： 公开了一种用于提供单模VCSEL（垂直腔表面发射激光）部件（100）的系统和方法，包括具有下表面和上表面的半导体衬底（102），沿着 衬底的下表面，由n型材料形成并设置在衬底的上表面上的下反射镜（106），具有设置在下反射镜部分上的多个量子阱的有源区（108），上反射镜 （110），设置在所述有源区上，设置在所述上​​反射镜部分上的等电位层（112），设置在所述等电位层上的第一上电接触件（120），设置在所述等电位层 在距离第一上部电接触件的特定距离（124）处的等电位层处的第一隔离区域（126），其设置在第一上部接触件下方并且穿过等式 电位层，上反射镜，有源区和下反射镜，设置在第二上触点下方并穿过等电位层，上反射镜，有源区和下反射镜的第二隔离区（128） 绝缘层（114,116），其插入在上反射镜和等电位层之间，并且适于在其间形成比第一和第二上触点之间的特定距离更小尺寸的孔（118）。

公开(公告)号：US08325775B2

公开(公告)日：2012-12-04

申请号：US12941940

申请日：2010-11-08

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： H01L29/201 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/3211

摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.

摘要翻译： 制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。 通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。 中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。 中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。 注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

公开(公告)号：US20120213243A1

公开(公告)日：2012-08-23

申请号：US13460725

申请日：2012-04-30

申请人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard

发明人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard

IPC分类号： H01S3/08

CPC分类号： H01S5/18308 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/3211

摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate, and a periodically doped conduction layer is coupled to the undoped top minor. A periodically doped spacer layer is coupled to an active region. An undoped bottom minor coupled to the periodically doped spacer layer. A first intracavity contact is coupled to the periodically doped conduction layer and a second intracavity contact is coupled to the periodically doped spacer layer.

摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成，并且周期性掺杂的导电层耦合到未掺杂的顶部次要器件。 周期性掺杂的间隔层耦合到有源区。 耦合到周期性掺杂的间隔层的未掺杂的底部小子。 第一腔内触点耦合到周期性掺杂的导电层，并且第二腔内触点耦合到周期性掺杂的间隔层。

公开(公告)号：US20110045621A1

公开(公告)日：2011-02-24

申请号：US12917449

申请日：2010-11-01

申请人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard ,  Colby Fitzgerald

发明人： Ralph H. Johnson ,  R. Scott Penner ,  James Robert Biard ,  Colby Fitzgerald

IPC分类号： H01L21/30

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305

摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.

摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。

公开(公告)号：US07408964B2

公开(公告)日：2008-08-05

申请号：US10026019

申请日：2001-12-20

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/34346

摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs, GaAsN. Barrier layers can also comprise InGaAsN. Quantum wells can also include Sb. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

摘要翻译： 可以生长量子阱和相关屏障层，以包括放置在典型GaAs衬底内或周围的氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In），以实现长波长VCSEL 性能，例如在1260至1650 nm范围内。 根据本发明的特征，垂直腔表面发射激光器（VCSEL）可以包括由InGaAsN组成的至少一个量子阱; 夹持所述至少一个量子阱的阻挡层; 以及夹持所述阻挡层的限制层。 限制层和阻挡层可以包括AlGaAs，GaAsN。 阻挡层也可以包括InGaAsN。 量子阱也可以包括Sb。 量子阱的厚度可以达到并包括50埃。 量子阱也可以开发深度至少40 meV。

公开(公告)号：US07378680B2

公开(公告)日：2008-05-27

申请号：US10931194

申请日：2004-08-31

申请人： Ralph H. Johnson ,  Virgil J. Blasingame

发明人： Ralph H. Johnson ,  Virgil J. Blasingame

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/18308 ,  H01S5/3201 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S2302/00

摘要： Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.

摘要翻译： 方法和系统产生与含氮量子阱相关的扁平层，并且使用高As流量防止含氮层的3-D生长。 MEE（迁移增强外延）用于平坦化层并增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 通过在量子阱之间，之前和/或之后交替沉积III族和V族的单一原子层来执行MEE。 在使用GaAs的情况下，可以通过在MBE系统中交替地打开和关闭Ga和As快门来实现该过程，同时防止两者同时打开。 在使用氮气的情况下，该系统包含防止氮气进入MBE处理室（例如闸阀）的机械装置。

公开(公告)号：US07167496B1

公开(公告)日：2007-01-23

申请号：US10634558

申请日：2003-08-04

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5/00 ,  H01S3/14

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34313 ,  H01S2302/00

摘要： In order to achieve a long wavelength, 1.3 micron or above, VCSEL or other semiconductor laser, layers of strained quantum well material are supported by mechanical stabilizers which are nearly lattice matched with the GaAs substrate, or lattice mismatched in the opposite direction from the quantum well material; to allow the use of ordinary deposition materials and procedures. By interspersing thin, unstrained layers of e.g. gallium arsenide in the quantum well between the strained layers of e.g. InGaAs, the GaAs layers act as mechanical stabilizers keeping the InGaAs layers thin enough to prevent lattice relaxation of the InGaAs quantum well material. Through selection of the thickness and width of the mechanical stabilizers and strained quantum well layers in the quantum well, 1.3 micron and above wavelength lasing is achieved with use of high efficiency AlGaAs mirrors and standard gallium arsenide substrates.

摘要翻译： 为了实现长波长，1.3微米或以上，VCSEL或其他半导体激光器，应变量子阱材料层由与GaAs衬底几乎晶格匹配的机械稳定器支持，或者在与量子相反的方向上晶格失配 井材料; 允许使用普通沉积材料和程序。 通过散布例如薄的，无约束的层。 砷化镓在量子阱中的应变层之间。 InGaAs，GaAs层作为机械稳定剂，保持InGaAs层足够薄以防止InGaAs量子阱材料的晶格弛豫。 通过选择量子阱中的机械稳定器和应变量子阱层的厚度和宽度，使用高效率AlGaAs镜和标准砷化镓衬底来实现1.3微米及以上的波长激光。

公开(公告)号：US07065124B2

公开(公告)日：2006-06-20

申请号：US10767920

申请日：2004-01-29

申请人： James R. Biard ,  Ralph H. Johnson ,  Klein L. Johnson

发明人： James R. Biard ,  Ralph H. Johnson ,  Klein L. Johnson

IPC分类号： H01S3/08 ,  H01S5/00

CPC分类号： H01S5/18358 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/205 ,  H01S5/3211 ,  H01S5/423 ,  H01S2301/166

摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.

摘要翻译： 具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。 这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。 此外，N型间隔层可以与量子阱的有源区相邻。 从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。 通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。