-
公开(公告)号：US07065124B2
公开(公告)日：2006-06-20
申请号：US10767920
申请日：2004-01-29
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/18308 , H01S5/2009 , H01S5/205 , H01S5/3211 , H01S5/423 , H01S2301/166
摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
摘要翻译： 具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。 这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。 此外，N型间隔层可以与量子阱的有源区相邻。 从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。 通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。
-
公开(公告)号：US07251264B2
公开(公告)日：2007-07-31
申请号：US11119292
申请日：2005-04-29
申请人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
发明人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
IPC分类号： H01S3/08
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.
摘要翻译： 本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于 第二距离。 此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。 最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。
-
公开(公告)号：US07031363B2
公开(公告)日：2006-04-18
申请号：US10697660
申请日：2003-10-29
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18363 , H01S5/18366 , H01S2301/176 , H01S2304/00
摘要： A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.
摘要翻译： 制造激光结构的方法。 该方法用于制造诸如垂直腔表面发射激光器（VCSEL）的激光器件。 所制造的结构涉及宽和窄沟槽，共面触点，非共面触点，厚和薄的电介质，空气桥和晶片变薄的介电和旋涂材料平面化。
-
公开(公告)号：US06990135B2
公开(公告)日：2006-01-24
申请号：US10283381
申请日：2002-10-28
申请人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
发明人： Ralph H. Johnson , Klein L. Johnson , Jimmy A. Tatum , James K. Guenter , James R. Biard , Robert A. Hawthorne, III
IPC分类号： H01S5/00
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un-oxidized portion of these layers as well as reducing the oxidation of other aluminum bearing layers of the DBR.
摘要翻译： 具有分布布拉格反射器的氧化物限制性VCSEL，其具有设置在低Al含量第一层和介质Al含量第二层之间的重掺杂高Al含量氧化物孔形成层。 在第一层和氧化物孔形成层之间可能存在其中Al含量从较高Al含量变为较低Al含量的薄过渡区。 在一些实施方案中，从氧化物孔形成层到第二层的Al浓度可以在一个步骤中发生。 氧化物孔形成层可以设置在由共振激光产生的电场的零点或节点附近或附近。 在氧化物孔形成层的氧化过程中，其它所有的一部分的含铝DBR层也可能被氧化，但是其程度基本较小。 认为这些层的氧化部分和未氧化部分之间的连接点降低了装置的稳定性和/或可靠性。 为了减轻这一点，本发明设想提供一种植入物，蚀刻或其它合适的方法，以减少或消除与这些层的氧化部分和未氧化部分之间的接合相关联的一个或多个电赝象以及减少其它的氧化部分 铝合金轴承层的DBR。
-
公开(公告)号：US08031752B1
公开(公告)日：2011-10-04
申请号：US12340286
申请日：2008-12-19
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , H01S5/18311 , H01S5/18344 , H01S5/18361 , H01S5/305 , H01S5/3077 , H01S5/3211
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.
摘要翻译： 垂直腔表面发射激光器（VCSEL）通过控制有源区域附近的掺杂层和未掺杂层的距离来优化VCSEL的更长寿命。 此外，VCSEL通过形成高Al限制区域并将氧化物置于无效的静态光波中而优化用于在VCSEL的氧化物下降低的寄生横向电流。 此外，VCSEL被优化以降低电阻。
-
6.发明授权Light emitting semiconductor device having an electrical confinement barrier near the active region 有权在有源区附近具有电限制屏障的发光半导体器件公开(公告)号：US07920612B2
公开(公告)日：2011-04-05
申请号：US11461353
申请日：2006-07-31
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/3054 , H01S5/3211 , H01S5/3432
摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
摘要翻译： 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。
-
公开(公告)号：US06558973B2
公开(公告)日：2003-05-06
申请号：US09766797
申请日：2001-01-22
IPC分类号： H01L2100
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.
-
公开(公告)号：US07009224B2
公开(公告)日：2006-03-07
申请号：US10413186
申请日：2003-04-14
IPC分类号： H01L31/0336 , H01L31/0328
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L31/184 , Y02E10/544 , Y10S438/938
摘要： A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.
摘要翻译： 一种变质装置，其包括可以形成半导体器件的基板结构。 在变质装置中，在正常生长温度下形成与衬底晶格常数相匹配的缓冲层，并且在低温下配置经过所需晶格常数的薄分级层。 反向分级层将晶格常数回归以匹配所需的晶格常数。 此后，基于所需的晶格常数，在其上形成厚层。 然后可以发生退火以在至少分级层和反向分级层中分离脱位的材料。 在其上形成了可以形成高速光电二极管或其它半导体器件的应变层超晶格。
-
9.发明授权Absorbing layers for reduced spontaneous emission effects in an integrated photodiode 有权吸收层，用于降低集成光电二极管中的自发发射效应公开(公告)号：US07403553B2
公开(公告)日：2008-07-22
申请号：US11026095
申请日：2004-12-30
申请人： James K. Guenter , Jimmy A. Tatum , James R. Biard
发明人： James K. Guenter , Jimmy A. Tatum , James R. Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3054 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。
-
公开(公告)号：US07277463B2
公开(公告)日：2007-10-02
申请号：US11026699
申请日：2004-12-30
申请人： James Guenter , James R. Biard
发明人： James Guenter , James R. Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0264 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18358
摘要： Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.
摘要翻译： 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器（VCSEL）或谐振腔发光二极管（RCLED）的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。
-
-
-
-
-
-
-
-
-
搜索结果
41 条记录 (耗时 0.027 秒)